www.ti.com
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 2001-2006, Texas Instruments Incorporated
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
FEATURES
COMPLETE BIDIRECTIONAL CURRENT
MEASUREMENT CIRCUIT
WIDE SUPPLY RANGE: 2.7V to 40V
SUPPLY-INDEPENDENT COMMON-MODE
VOLTAGE: 2.7V TO 60V
RESISTOR PROGRAMMABLE GAIN SET
LOW QUIESCENT CURRENT: 75µA (typ)
MSOP-8 PACKAGE
High-Side, Bidirectional
CURRENT SHUNT MONITOR
DESCRIPTION
The INA170 is a high-side, bidirectional current shunt moni-
tor featuring a wide input common-mode voltage range, low
quiescent current, and a tiny MSOP-8 package.
Bidirectional current measurement is accomplished by out-
put offsetting. The offset voltage level is set with an external
resistor and voltage reference. This permits measurement of
a bidirectional shunt current while using a single supply for
the INA170.
Input common-mode and power-supply voltages are inde-
pendent. Input voltage can range from +2.7V to +60V on any
supply voltage from +2.7V to +40V. Low 10µA input bias
current adds minimal error to the shunt current.
The INA170 converts a differential input voltage to a current
output. This current develops a voltage across an external
load resistor, setting any gain from 1 to over 100.
The INA170 is available in an MSOP-8 package, and is
specified over the extended industrial temperature range,
–40°C to +85°C with operation from –55°C to +125°C.
APPLICATIONS
CURRENT SHUNT MEASUREMENT:
Automotive, Telephone, Computers, Power
Systems, Test, General Instrumentation
PORTABLE AND BATTERY-BACKUP
SYSTEMS
BATTERY CHARGERS
POWER MANAGEMENT
CELL PHONES
INA170
SBOS193D – MARCH 2001 – REVISED JANUARY 2006
2
1
3
OUT
GND
INA170
Q1
A1
A2 Q2
6
4
I
S
V
REF
V+
V
SUPPLY
R
OS
8
5
Load R
L
R
G1
1k
R
G2
1k
R
S
V
IN
V
IN
+
R
OS
All trademarks are the property of their respective owners.
INA170
2SBOS193D
www.ti.com
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instru-
ments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
Supply Voltage, V+ to GND ................................................. 0.3V to 40V
Analog Inputs, Common Mode(2) ......................................... 0.3V to 75V
Differential (VIN
+) (VIN
) .................................. 40V to 2V
Analog Output, Out(2) ........................................................... 0.3V to 40V
Input Current Into Any Pin ............................................................... 10mA
Operating Temperature ..................................................55°C to +125°C
Storage Temperature .....................................................65°C to +150°C
Junction Temperature.................................................................... +150°C
NOTE: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those specified is not implied.
(2) The input voltage at any pin may exceed the voltage shown if the current
at that pin is limited to 10mA.
ABSOLUTE MAXIMUM RATINGS(1)
PIN DESIGNATOR DESCRIPTION
1V
IN
Inverting Input
2V
IN
+Noninverting Input
3V
REF Reference Voltage Input
4 GND Ground
5R
OS Offset Resistor
6 OUT Output
7 NC No Connection
8 V+ Supply Voltage
PIN CONFIGURATION
TOP VIEW MSOP
PIN DESCRIPTION
V
IN
V
IN
V
REF
GND
V+
NC
OUT
R
OS
1
2
3
4
8
7
6
5
+
PACKAGE/ORDERING INFORMATION(1)
NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at
www.ti.com.
SPECIFIED
PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT
PRODUCT PACKAGE-LEAD DESIGNATOR RANGE MARKING NUMBER MEDIA, QUANTITY
INA170EA MSOP-8 DGK 40°C to +85°C INA170EA INA170EA/250 Tape and Reel, 250
"" " ""INA170EA/2K5 Tape and Reel, 2500
INA170 3
SBOS193D www.ti.com
ELECTRICAL CHARACTERISTICS
At TA = 40°C to +85°C, VS = 5V, VIN
+ = 12V, ROUT = 25k, unless otherwise noted.
PARAMETER CONDITION MIN TYP MAX UNITS
INPUT
Full-Scale Sense (Input) Voltage VSENSE = VIN
+ VIN
100 500 mV
Common-Mode Input Range +2.7 +60 V
Common-Mode Rejection VIN
+ = +2.7V to +60V, VSENSE = 50mV 100 120 dB
Offset Voltage(1) RTI ±0.2 ±1mV
vs Temperature TMIN to TMAX 1µV/°C
vs Power Supply V+ = +2.7V to +60V, VSENSE = 50mV 0.1 10 µV/V
Input Bias Current VIN
+, VIN
10 uA
OFFSETTING AMPLIFIER
Offsetting Equation VOS = (RL/ROS) VREF
Input Voltage 1V
S 1V
Input Offset Voltage ±0.2 ±1mV
vs Temperature TMIN to TMAX 10 µV/°C
Programming Current through ROS 01mA
Input Impedance 1010 || 4 || pF
Input Bias Current VIN
+, VIN
+10 nA
OUTPUT
Transconductance VSENSE = 10mV to 150mV 0.990 1 1.01 mA/V
vs Temperature VSENSE = 100mV 50 nA/°C
Nonlinearity Error VSENSE = 10mV to 150mV ±0.01 ±0.1 %
Total Output Error VSENSE = 100mV ±0.5 ±2%
Output Impedance 1 || 5 G || pF
Voltage Output
Swing to Power Supply, V+ (V+) 0.9 (V+) 1.2 V
Swing to Common Mode, VCM VCM 0.6 VCM 1.0 V
FREQUENCY RESPONSE
Bandwidth ROUT = 10k400 kHz
Settling Time (0.1%) 5V Step, ROUT = 10k3µs
NOISE
Output-Current Noise Density 20 pA/Hz
Total Output-Current Noise BW = 100kHz 7 nA RMS
POWER SUPPLY
Operating Range V+ +2.7 +40 V
Quiescent Current VSENSE = 0, IO = 0 75 125 µA
TEMPERATURE RANGE
Specification, TMIN to TMAX 40 +85 °C
Operating 55 +125 °C
Storage 65 +150 °C
Thermal Resistance,
θ
JA 150 °C/W
NOTE: (1) Defined as the amount of input voltage, VSENSE, to drive the output to zero.
INA170EA
INA170
4SBOS193D
www.ti.com
TYPICAL CHARACTERISTICS
At TA = +25°C, V+ = 5V, VIN
+ = 12V, RL = 25k, unless otherwise noted.
40
30
20
10
0
10
20100 1k 10k 100k 1M 10M
Gain (dB)
Frequency (Hz)
GAIN vs FREQUENCY
R
L
= 10k
R
L
= 100k
R
L
= 1k
120
100
80
60
40
20
00.1 110 100 1k 10k
Common-Mode Rejection (dB)
Frequency (Hz)
100k
G = 1
G = 10
G = 100
COMMON-MODE REJECTION vs FREQUENCY
140
120
100
80
60
40
20 110 100 1k 10k 100k
Power-Supply Rejection (dB)
Frequency (Hz)
POWER-SUPPLY REJECTION vs FREQUENCY
G = 1
G = 10
G = 100
5
0
5
10
15 025 50 75 100 125
Total Output Error (%)
VIN (mV)
TOTAL OUTPUT ERROR vs VIN
150 200
55°C
+25°C
+150°C
VIN = (VIN VIN)
+
2
1
0
1
2010 20 30 40
Total Output Error (%)
Power-Supply Voltage (V)
TOTAL OUTPUT ERROR
vs POWER-SUPPLY VOLTAGE
G = 1
G = 10 G = 25
Output error is essentially
independent of both
V+ supply voltage and
input common-mode voltage.
100
80
60
40
20
0010 20 30 40
Quiescent Current (µA)
Power-Supply Voltage (V)
QUIESCENT CURRENT
vs POWER-SUPPLY VOLTAGE
+150°+125°
+25°
55°
INA170 5
SBOS193D www.ti.com
TYPICAL CHARACTERISTICS (Cont.)
At TA = +25°C, V+ = 5V, VIN
+ = 12V, RL = 25k, unless otherwise noted.
STEP RESPONSE
20µs/div
1.5V
G = 100
0.5V
1V
G = 100
0V
STEP RESPONSE
10µs/div
1V
G = 50
0V
2V
G = 10
0V
INA170
6SBOS193D
www.ti.com
OPERATION
Figure 1 shows the basic circuit diagram for the INA170.
Load current IS is drawn from supply VS through shunt
resistor RS. The voltage drop in shunt resistor VS is forced
across RG1 by the internal op-amp, causing current to flow
into the collector of Q1. External resistor RL converts the
output current to a voltage, VOUT, at the OUT pin.
Without offset, the transfer function for the INA170 is:
IO = gm (VIN
+ – VIN
)(1)
where gm = 1000µA/V (2)
In the circuit of Figure 1, the input voltage, (VIN
+ – VIN
), is
equal to IS • RS and the output voltage, VOUT, is equal to
IO • RL. The transconductance, gm, of the INA170 is
1000µA/V. The complete transfer function for the current
measurement amplifier in this application is:
VOUT = (IS) (RS) (1000µA/V) (RL)(3)
Applying a positive reference voltage to pin 3 causes a
current to flow through ROS, forcing output current IO to be
offset from zero. The transfer function then becomes:
VVR
RIRR
k
OUT REF L
OS
SSL
=
±
••
1
(4)
The maximum differential input voltage for accurate mea-
surements is 0.5V, which produces a 500µA output current.
A differential input voltage of up to 2V will not cause
damage. Differential measurements (pins 1 and 2) can be
bipolar with a more-positive voltage applied to pin 2. If a
more-negative voltage is applied to pin 1, output current IO
will decrease towards zero.
BASIC CONNECTION
Figure 1 shows the basic connection of the INA170. The
input pins, VIN
+ and VIN
, should be connected as closely as
possible to the shunt resistor to minimize any resistance in
series with the shunt resistance. The output resistor, RL, is
shown connected between pin 6 and ground. Best accuracy
is achieved with the output voltage measured directly across
RL. This is especially important in high-current systems
where load current could flow in the ground connections,
affecting the measurement accuracy.
No power-supply bypass capacitors are required for stability
of the INA170. However, applications with noisy or high
impedance power supplies may require de-coupling capaci-
tors to reject power-supply noise. Connect bypass capacitors
close to the device pins.
POWER SUPPLIES
The input circuitry of the INA170 can accurately measure
beyond its power-supply voltage, V+. For example, the V+
power supply can be 5V, while the load power-supply
voltage (INA170 input voltage) is up to +60V. However, the
output-voltage range of the OUT terminal (pin 6) is limited
by the supply.
SELECTING RS AND RL
The value chosen for the shunt resistor, RS, depends on the
application and is a compromise between small-signal accu-
racy and maximum permissible voltage loss in the measure-
ment line. High values of RS provide better accuracy at lower
FIGURE 1. Basic Circuit Connections.
Shunt
R
S
INA170
46
OUT
Q1
R
L
I
0
+
V
O
Load
R
G1
1kR
G2
1k
V
IN
V
IN
21
I
S
V+
V
REF
3
8
5
V+ power can be
common or
independent of
load supply.
2.7 (V+) 40V
V
P
Load Power Supply
+2.7 to 60V
+
Q2
R
OS
VOLTAGE GAIN EXACT RL () NEAREST 1% RL ()
11k 1k
22k 2k
5 5k 4.99k
10 10k 10k
20 20k 20k
50 50k 49k
100 100k 100k
INA170 7
SBOS193D www.ti.com
currents by minimizing the effects of offset, while low values
of RS minimize voltage loss in the supply line. For most
applications, best performance is attained with an RS value
that provides a full-scale shunt voltage of 50mV to 100mV.
Maximum input voltage for accurate measurements is 500mV.
RL is chosen to provide the desired full-scale output voltage.
The output impedance of the INA170 Out terminal is very
high which permits using values of RL up to 100k with
excellent accuracy. The input impedance of any additional
circuitry at the output should be much higher than the value
of RL to avoid degrading accuracy.
Some Analog-to-Digital (A/D) converters have input imped-
ances that will significantly affect measurement gain. The
input impedance of the A/D converter can be included as
part of the effective RL if its input can be modeled as a
resistor to ground. Alternatively, an op-amp can be used to
buffer the A/D converter input, as shown in Figure 2. See
Figure 1 for recommended values of RL.
OUTPUT VOLTAGE RANGE
The output of the INA170 is a current, which is converted to
a voltage by the load resistor, RL. The output current remains
accurate within the compliance voltage range of the output
circuitry. The shunt voltage and the input common-mode
and power supply voltages limit the maximum possible
output swing. The maximum output voltage compliance is
limited by the lower of the two equations below:
Vout max = (V+) – 0.7V – (VIN
+ – VIN
)(5)
or
Vout max = VIN
– 0.5V (6)
(whichever is lower)
BANDWIDTH
Measurement bandwidth is affected by the value of the load
resistor, RL. High gain produced by high values of RL will
yield a narrower measurement bandwidth (see Typical Char-
acteristic Curves). For widest possible bandwidth, keep the
capacitive load on the output to a minimum.
If bandwidth limiting (filtering) is desired, a capacitor can be
added to the output, as shown in Figure 3. This will not
cause instability.
APPLICATIONS
The INA170 is designed for current shunt measurement
circuits as shown in Figure 1, but its basic function is useful
in a wide range of circuitry. A creative engineer will find
many unforeseen uses in measurement and level shifting
circuits.
FIGURE 4. Offsetting the Output Voltage.
FIGURE 2. Buffering Output to Drive A/D Converter. FIGURE 3. Output Filter.
I
S
OPA340
INA170
21
4
6Z
IN
R
L
Buffer of amp drives A/D converter
without affecting gain.
INA170 f
3dB
= 1
2πR
L
C
L
V
O
f
3dB
R
L
C
L
21
4
6
V0
VREF
RL
6
Gain Set by RL
Output Offset Current = VREF
ROS
Output Offset Voltage = RL
VREF
ROS
INA170
21
45
3
IS
ROS
INA170
8SBOS193D
www.ti.com
FIGURE 5. Bipolar Current Measurement.
Load
45
1
VREF
2
3
0.0125
GND
ROS
OUT
V+
INA170
28V
+2.5V
IS = ±10A
IOS = 125µA
IO = 125µA ± 125µA
VOUT = 0 to +2.5V Full-Scale
20k
6
RL
10k
+5V
0.1µF
8
V =
±125mV
Full-Scale
VIN
VIN
+
PACKAGE OPTION ADDENDUM
www.ti.com 16-Aug-2012
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
INA170EA/250 ACTIVE VSSOP DGK 8 250 Green (RoHS
& no Sb/Br) CU NIPDAUAGLevel-2-260C-1 YEAR
INA170EA/250G4 ACTIVE VSSOP DGK 8 250 Green (RoHS
& no Sb/Br) CU NIPDAUAGLevel-2-260C-1 YEAR
INA170EA/2K5 ACTIVE VSSOP DGK 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAUAGLevel-2-260C-1 YEAR
INA170EA/2K5G4 ACTIVE VSSOP DGK 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAUAGLevel-2-260C-1 YEAR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
INA170EA/250 VSSOP DGK 8 250 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA170EA/2K5 VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 16-Aug-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA170EA/250 VSSOP DGK 8 250 366.0 364.0 50.0
INA170EA/2K5 VSSOP DGK 8 2500 366.0 364.0 50.0
PACKAGE MATERIALS INFORMATION
www.ti.com 16-Aug-2012
Pack Materials-Page 2
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