FRF150D, FRF150R, FRF150H 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package * 25A, 100V, RDS(on) = 0.07 TO-254AA * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma * Gamma Dot * Photo Current * Neutron - Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM - 7.0nA Per-RAD(Si)/sec Typically - Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. Symbol This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired deviations from the data sheet. Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specified Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain-Gate Voltage (RGS = 20k). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Current, Clamped, L = 100H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . ILM Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (c)2001 Fairchild Semiconductor Corporation FRF150D, R, H 100 100 UNITS V V 25 20 75 20 A A A V 125 50 1.00 75 25 75 -55 to +150 W W W/oC A A A oC 300 oC FRF150D, FRF150R, FRF150H Rev. A FRF150D, FRF150R, FRF150H Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA 100 - V Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA 2.0 4.0 V Gate-Body Leakage Forward IGSSF VGS = +20V - 100 nA Gate-Body Leakage Reverse IGSSR VGS = -20V - 100 nA Zero-Gate Voltage Drain Current IDSS1 IDSS2 IDSS3 VDS = 100V, VGS = 0 VDS = 80V, VGS = 0 VDS = 80V, VGS = 0, TC = +125oC - 1 0.025 0.25 mA Time = 20s - 75 A Rated Avalanche Current IAR Drain-Source On-State Volts VDS(on) VGS = 10V, ID = 25A - 1.84 V Drain-Source On Resistance RDS(on) VGS = 10V, ID = 20A - .07 td(on) VDD = 50V, ID = 25A - 134 Pulse Width = 3s - 628 Period = 300s, Rg = 25 - 642 0 VGS 10 (See Test Circuit) - 490 4 17 79 314 138 552 2 12 Turn-On Delay Time Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Gate-Charge Threshold QG(th) Gate-Charge On State QG(on) ns VDD = 50V, ID = 25A IGS1 = IGS2 0 VGS 20 nc Gate-Charge Total QGM Plateau Voltage VGP Gate-Charge Source QGS 11 46 Gate-Charge Drain QGD 40 164 Diode Forward Voltage VSD 0.6 1.8 V Reverse Recovery Time TT - 1400 ns - 1.0 - 48 V nc Junction-To-Case Rjc Junction-To-Ambient Rja ID = 25A, VGD = 0 I = 25A; di/dt = 100A/s Free Air Operation oC/W ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDD VDS L RL + CURRENT I TRANSFORMER AS VDS VGS = 12V DUT - VARY tP TO OBTAIN REQUIRED PEAK IAS VDD VGS 20V 0V 0V FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT DUT RGS (c)2001 Fairchild Semiconductor Corporation + 50 tP 50V-150V 50 FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT FRF150D, FRF150R, FRF150H Rev. A FRF150D, FRF150R, FRF150H Post-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER Drain-Source Breakdown Volts Gate-Source Threshold Volts Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero-Gate Voltage Drain Current Drain-Source On-State Volts Drain-Source On Resistance SYMBOL TYPE (Note 4, 6) BVDSS FRF150D, R (Note 5, 6) BVDSS (Note 4, 6) (Note 3, 5, 6) TEST CONDITIONS MIN MAX UNITS VGS = 0, ID = 1mA 100 - V FRF150H VGS = 0, ID = 1mA 95 - V VGS(th) FRF150D, R VGS = VDS, ID = 1mA 2.0 4.0 V VGS(th) FRF150H VGS = VDS, ID = 1mA 1.5 4.5 V (Note 4, 6) IGSSF FRF150D, R VGS = 20V, VDS = 0 - 100 nA (Note 5, 6) IGSSF FRF150H VGS = 20V, VDS = 0 - 200 nA (Note 2, 4, 6) IGSSR FRF150D, R VGS = -20V, VDS = 0 - 100 nA (Note 2, 5, 6) IGSSR FRF150H VGS = -20V, VDS = 0 - 200 nA (Note 4, 6) IDSS FRF150D, R VGS = 0, VDS = 80V - 25 A (Note 5, 6) IDSS FRF150H VGS = 0, VDS = 80V - 100 A (Note 1, 4, 6) VDS(on) FRF150D, R VGS = 10V, ID = 25A - 1.84 V (Note 1, 5, 6) VDS(on) FRF150H VGS = 16V, ID = 25A - 2.76 V (Note 1, 4, 6) RDS(on) FRF150D, R VGS = 10V, ID = 20A - 0.07 (Note 1, 5, 6) RDS(on) FRF150H VGS = 14V, ID = 20A - 0.105 NOTES: 1. Pulse test, 300s max 2. Absolute value 3. Gamma = 300KRAD(Si) 4. Gamma = 10KRAD(Si) for "D", 100KRAD(Si) for "R". Neutron = 3E13 5. Gamma = 1000KRAD(Si). Neutron = 3E13 6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS 7. Gamma data taken 11/16/89 on TA 17651 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989 9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988 (c)2001 Fairchild Semiconductor Corporation FRF150D, FRF150R, FRF150H Rev. A FRF150D, FRF150R, FRF150H Typical Performance Characteristics (c)2001 Fairchild Semiconductor Corporation FRF150D, FRF150R, FRF150H Rev. A FRF150D, FRF150R, FRF150H Typical Performance Characteristics (c)2001 Fairchild Semiconductor Corporation FRF150D, FRF150R, FRF150H Rev. A FRF150D, FRF150R, FRF150H Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent 1. Rad Hard TXV Equivalent - Standard Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - Attributes Data Sheet F. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet G. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet H. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet I. Group D - Attributes Data Sheet D. Group A 2. Rad Hard TXV Equivalent - Optional Data Package A. Certificate of Compliance 2. Rad Hard Max. "S" Equivalent - Optional Data Package A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data C. Assembly Flow Chart D. Group A - Attributes Data Sheet - Group A Lot Traveler E. Group B - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C G. Group D - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data Class S - Equivalents 1. Rad Hard "S" Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report (c)2001 Fairchild Semiconductor Corporation FRF150D, FRF150R, FRF150H Rev. A FRF150D, FRF150R, FRF150H TO-254AA 3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE INCHES A OP E A1 Q H1 D 0.065 R MAX. TYP. L Ob 1 2 3 e e1 J1 MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.249 0.260 6.33 6.60 - A1 0.040 0.050 1.02 1.27 - Ob 0.035 0.045 0.89 1.14 2, 3 D 0.790 0.800 20.07 20.32 - E 0.535 0.545 13.59 13.84 - e 0.150 TYP 3.81 TYP 4 e1 0.300 BSC 7.62 BSC 4 H1 0.245 0.265 6.23 6.73 - J1 0.140 0.160 3.56 4.06 4 L 0.520 0.560 13.21 14.22 - OP 0.139 0.149 3.54 3.78 - Q 0.110 0.130 2.80 3.30 - NOTES: 1. These dimensions are within allowable dimensions of Rev. A of JEDEC outline TO-254AA dated 11-86. 2. Add typically 0.002 inches (0.05mm) for solder coating. 3. Lead dimension (without solder). 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Die to base BeO isolated, terminals to case ceramic isolated. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. WARNING! BERYLLIA WARNING PER MIL-S-19500 Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its' compounds. (c)2001 Fairchild Semiconductor Corporation FRF150D, FRF150R, FRF150H Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H