SIEMENS FEATURES Dual Version of SFH610 Series High Current Transfer Ratios ILD610-1, 40-80% ILD610-2, 63-125% ILD610-3, 100-200% ILD610-4, 160-320% * Isolation Test Voltage, 5300 Vans * Veesat 0-25 (<0.4) V at Ip=10 mA, Ic=2.5 mA * VoEQ=70V Underwriters Lab File #E52744 VDE #0884 Available with Option 11 DESCRIPTION The ILD610 Series is a dual channel optocoupler series for high density applications. Each channel consists of an optically coupled pair with a Gallium Arsenide infrared LED and a silicon NPN pho- totransistor. Signal information, including a DC level, can be transmitted by the device while main- taining a high degree of electrical isolation between input and output. The ILD610 Series is the dual ver- sion of SFH610 Series and uses a repetitive pin-out configuration instead of the more common alternat- ing pin-out used in most dual couplers. Maximum Ratings (Each Channel) Emitter Reverse VOItaGe 0... eeeeeeeeeeeeerteeeenneeeeeeeeenaeees 6V Surge Forward Current (t 10 Ms)... eee 1.5A Total Power Dissipation ...........ceeeeeeeee 100 mw Derate Linearly from 25C... eeeeeeeeee 1.3 mW/C DC Forward Current ..0..... ce eeseeeeeseeeeeneeeeeeeees 60 mA Detector Collector-Emitter Voltage... ee ceessesseeeeneeees 70V Collector Current 00... ee eceesseeeseeeeesneeeeenreeeeees 50 mA Collector Current (t <1 MS)... eres 100 mA Total Power Dissipation .......... cece eee 150 mw Derate Linearly from 25C... ieee 2.0 MWC Package Isolation Test Voltage (t=1 sec.)........ 5300 VACams Isolation Resistance Vi9=500 V, Ta=25C veccecsecsesseesserseesesseeees 210170 Vig= 500 V, Ty= 100C veeccssescscessseesecsseesees 210 Storage Temperature ......... ee 65C to + 150C Operating Temperature Junction Temperature Lead Soldering Time at 260C... ee 10 sec. ILD610 SERIES DUAL PHOTOTRANSISTOR OPTOCOUPLER Dimensions in inches (mm) Pin One I.D. i t d Anode aT ae Emitter ~~ .268 (6.81) Cathode 355 (6.48) [2 7 Collector Anode [3] 6 | Emitter ol is a ee A Rae Cathode [4 | [5] Collector .390 (9.91) .379 (9.63) .045 (1.14) .150 (3.81) -305 Typ. ) 1.030 (.76) .130 (3.30) (7.75) Typ. Lat | ! 5 .135 (3.43) __ \ 115 (2.92) 4 Typ. | 10 ye] 040 (1.02) 3_9 .030 (.76 Le a 7) 50 90) lL :100 (2.54) Typ. .008 (.20) Electrical Characteristics (T,a=25C) Symbol | Typ. Unit | Condition Emitter Forward Voltage Ve 1.25 Vv |-=60mA (1.65) Reverse Current IR 0.01 ($10) | yA Vp=6V Capacitance Co 25 pF VR=0 V, f=1 MHz Detector Breakdown Voltage Collector-Emitter BVcEO 90 (270) Vv Io=10 pA Emitter-Collector BVcEO 7.0 (26.0) Vv lp=10 pA Collector-Emitter Dark IcEO 2 (<50) nA Vop=10 V Current Capacitance Coe 7 pF Vog=5 V, f=1 MHz Package Collector-Emitter Saturation VoeEsat 0.25 Vv |-=10 mA, Voltage (<0.40) lc=2.5 mA Coupling Capacitance Co 0.35 pF -1 -2 3 -4 CTR l-=10 mA, Vof=5 V 40-80 63-125 100-200 160-320 % CTR lp=1 mA, Vop=5 V 13 min. 22 min. 34 min. 56 min. % ICEO (Vog=10 V) 2 (<50) 2 (<50) 5 (<100) 5 (<100) nA CTR will match within a ratio of 1.7:1 Switching Characteristics Linear Operation (without saturation) |-F=10 mA, Vec=5 V, Ro=75 , Typical -1 -2 3 -4 Turn on time ton 3.0 3.2 3.6 4.1 us Rise time t 2.0 2.5 2.9 3.3 us Turn off time tof 2.3 2.9 3.4 3.7 us Fall time t 2.0 2.6 3.1 3.5 us Switching Operation (with saturation) Voc=5 V, Re=1 , Typicall -1 -2 3 -4 IF=20mA | Ip=10mA | Ip=10mMA | IpF=5 mA Turn on time ton 3.0 4.3 4.6 6.0 us Rise time t 2.0 2.8 3.3 4.6 us Turn off time tof 18 2.9 3.4 25 us Fall time t 11 2.6 3.1 15 us Figure 1. Forward voltage versus forward current 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 a= -55C Ta = 25C VF - Forward Voltage - V A 1 10 100 IF - Forward Current - mA Figure 2. Normalized non-saturated and saturated CTR at T,=25C versus LED current 15 ce - Normalized}to: F [Vee = 5V, IF = 10mA 2 L Ta=25C oS N 1.0 [~eTRee(at) Ves = 0-4V o . 5 C faoo~ o . 2 05 7 FoF A a NCTR(SAT) So f wutiee INCTR 0.0 Cio 1 10 IF - LED Current - mA 100 Figure 3. Normalized non-saturated and saturated CTR at Tg=50C versus LED current NCTR - Normalized CTR 1.5 + Normalized ito: r = Vce = 5V, IF = 10mA, Tai= 25C | CTRee(sat)Vce = 0.4V 1.0 L = Ta=50C 7 0.5 3 ~ "4 r NCTR(SAT) r NCTR 0.0 A 10 100 1 IF- LED Current - mA Figure 4. Normalized non-saturated and saturated CTR at T,=70C versus LED curent 1.5 NCTR - Normalized CTR L Normalizedito: r Vce =5V,1F = 10mA [ Ta = 25C 1.0 L CTRce(sat)iVce = 0.4V 05 [. an. 7 70C 0 r NCTR(SAT) - NCTR 1 10 IF- LED Current - mA 100 ILD610 Figure 5. Normalized non-saturated and saturated CTR at Ta=85C versus LED current 1.5 f& Normalized to: Oo Vce = 10V, JF = 10mA, Tai= 25C 8 10 CTRee(sat)iVce = 0.4V oe = E Y , 05 =~ oc Ta=85C Na 5 = NCTR(SAT) z i mp NCIR 0.0 La 3 Le LL LL A 1 10 100 IF - LED Current - mA Figure 6. Collector-emitter current versus temperature and LED current 35 30 25 20 15 10 5 0 Ice - Collector Current - mA 0 10 20 30 40 50 60 IF - LED Current -mA Figure 7. Collector-emitter leakage current versus temperature 10 104 10 102 10! 109 nA 10! 107 Iceo - Collector-Emitter - -20 0 20 40 60 80 100 Ta- Ambient Temperature - C Figure 8. Propagation delay versus collector load resistor n 71000 E ta =25C, IF =10mA 4 > F Voc = 5 V, Vth =1.5V A a 100 ee | 20 5 E 4 bo a Lh. & > aml i S10 bony J 15 EF tpLH 1 + f 1 = 1 a , 1.0 4 1 10 100 RL- Collector Load Resistor - KQ tpHL - Propagation Delay - us Figure 9. Switching timing lF4 tR \L et tpHL | tPLH VTH=1.5/V k-ts-t+ tp + Figure 10. Non-saturated switching schematic Voc=5 V F=10 KHz DF=50% RL Ip=10 mA Vo Cm Figure 11. Saturated switching time test waveform Input 0 je-ton| tof} tpdon} | tpdof +} | Output | ta tr ts! 0 | | oT] | 10% * | - 10% 50% - 50% 90% - - 90% ILD610