1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 40 Vdc
Collector–Base Voltage VCBO 60 Vdc
Emitter–Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC600 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625 mW
Junction Temperature TJ, Tstg 150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 0.2 °C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0) V(BR)CEO 40 — Vdc
Collector–Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0) V(BR)CBO 60 — Vdc
Emitter–Base Breakdown Voltage
(IB = 10
m
Adc, IC = 0) V(BR)EBO 5.0 — Vdc
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TA = 60°C)
ICBO —
—0.05
2.0
m
Adc
Order this document
by MPS6530/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
REV 1
MPS6530
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE 30
40
25
—
120
—
—
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc) VCE(sat) — 0.5 Vdc
Base–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc) VBE(sat) — 1.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 5.0 pF
Figure 1. Turn–On Time Figure 2. Turn–Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+16 V
–2.0 V < 2.0 ns
0
1.0 to 100
µ
s,
DUTY CYCLE
≈
2.0%
1.0 k
Ω
+30 V
200
Ω
CS* < 10 pF
+16 V
–14 V
0
< 20 ns
1.0 to 100
µ
s,
DUTY CYCLE
≈
2.0%
1.0 k
Ω
+30 V
200
Ω
CS* < 10 pF
–4.0 V
MPS6530
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 3. Capacitances
REVERSE VOLTAGE (VOLTS)
7.0
10
20
30
5.0
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
0.1 2.0 5.0 10 20
2.0 30 50
CAPACITANCE (pF)
Q, CHARGE (nC)
3.0
2.0
3.0
5.0
7.0
10
1.0
10 20 50 70 100 200
0.1 300 500
0.7
0.5
VCC = 30 V
IC/IB = 10
Figure 5. Turn–On Time
IC, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
Figure 6. Rise and Fall Times
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
10
5.0
7.0
Cobo QT
QA
25
°
C 100
°
C
TRANSIENT CHARACTERISTICS
3.01.00.50.30.2
0.3
0.2
30
ts, STORAGE TIME (ns)
′
t, TIME (ns)
t, TIME (ns)tf, FALL TIME (ns)
Ccb
70
100
10 20 50 70 100 200 300 500
30
IC/IB = 10
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0 20
30
50
5.0
10
7.0
70
100
10 20 50 70 100 200 300 500
30
VCC = 30 V
IC/IB = 10
tr
tf
10 20 50 70 100 200 300 500
30
100
200
30
70
50
300
10 20 50 70 100 200 300 500
30
ts
′
= ts – 1/8 tf
IB1 = IB2
IC/IB = 10 to 20
VCC = 30 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
MPS6530
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
6.0
8.0
10
0
4.0
2.0
0.1 2.0 5.0 10 20 50
1.00.50.20.01 0.02 0.05 100
Figure 9. Frequency Effects
f, FREQUENCY (kHz)
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
NF, NOISE FIGURE (dB)
IC = 1.0 mA, RS = 150
Ω
IC = 500
µ
A, RS = 200
Ω
IC = 100
µ
A, RS = 2.0 k
Ω
IC = 50
µ
A, RS = 4.0 k
Ω
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
100 k50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
6.0
8.0
10
0
4.0
2.0
NF, NOISE FIGURE (dB)
Figure 10. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
f = 1.0 kHz
IC = 50
µ
A
IC = 100
µ
A
IC = 500
µ
A
IC = 1.0 mA
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
hfe and other “h” parameters for this series of transistors. To
obtain these curves, a high–gain and a low–gain unit were
selected from both the 2N4400 and 2N4401 lines, and the
same units were used to develop the correspondingly num-
bered curves on each graph.
Figure 11. Current Gain
IC, COLLECTOR CURRENT (mA)
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3
100
200
20
70
50
300
hfe, CURRENT GAIN
hie, INPUT IMPEDANCE (OHMS)
Figure 12. Input Impedance
IC, COLLECTOR CURRENT (mA)
50 k
500
30
5.0 7.0
20 k
10 k
5.0 k
2.0 k
1.0 k
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
Figure 13. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3
0.2
10
Figure 14. Output Admittance
IC, COLLECTOR CURRENT (mA)
100
1.0
5.0 7.0
50
20
10
5.0
2.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
h , OUTPUT ADMITTANCE ( mhos)
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
m
–4
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
MPS6530
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
STATIC CHARACTERISTICS
Figure 15. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 16. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 500.2 0.3
01.00.7 5.0 7.0
CE
IC = 1.0 mA
TJ = 25
°
C
0.070.050.030.020.01
10 mA 100 mA
10 20 30
500 mA
0.3
0.5
0.7
1.0
3.0
0.1
h , NORMALIZED CURRENT GAIN
0.5 2.0 3.0 10 50 70
0.2 0.3
0.2 100
1.00.7 500
30205.0 7.0
FE
TJ = 125
°
C
–55
°
C
2.0
200 300
25
°
C
VCE = 1.0 V
VCE = 10 V
Figure 17. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 18. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0100
–0.5
0
+0.5
–1.0
–1.5
–2.0
500
TJ = 25
°
CVBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
q
VC for VCE(sat)
q
VB for VBE
200
0.1 0.2 0.5
COEFFICIENT (mV/ C)
°
–2.5 1.0 2.0 5.0 10 20 50 100 500
200
0.1 0.2 0.5
MPS6530
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 029–04
(TO–226AA)
ISSUE AD
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