PD-90675E IRHM7150 JANSR2N7268 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM7150 100 kRads(Si) 0.065 34A JANSR2N7268 IRHM3150 IRHM4150 IRHM8150 300 kRads(Si) 500 kRads(Si) 1000 kRads(Si) 0.065 0.065 0.065 34A 34A 34A JANSF2N7268 JANSG2N7268 JANSH2N7268 TO-254 Description Features IR HiRel RAD-Hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Light Weight ESD Rating: Class 3A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation Parameter Units Continuous Drain Current 34 ID @ VGS = 12V, TC = 100C Continuous Drain Current 21 ID @ VGS = 12V, TC = 25C A Pulsed Drain Current 136 Maximum Power Dissipation 150 W Linear Derating Factor 1.2 W/C VGS Gate-to-Source Voltage 20 V EAS Single Pulse Avalanche Energy 500 IAR Avalanche Current EAR Repetitive Avalanche Energy 34 15 mJ A dv/dt Peak Diode Recovery dv/dt 5.5 IDM PD @TC = 25C TJ TSTG Operating Junction and Weight V/ns -55 to + 150 C Storage Temperature Range Lead Temperature mJ 300 (0.063 in./1.6 mm from case for 10s) 9.3 (Typical) g For Footnotes, refer to the page 2. 1 2016-07-01 IRHM7150 JANSR2N7268 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS BVDSS/TJ Min. Typ. Max. Units Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient 100 --- --- 0.13 Static Drain-to-Source On-State --- --- QG QGS QGD td(on) tr td(off) tf Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 2.0 8.0 --- --- --- --- --- --- --- --- --- --- --- --- 0.065 --- 0.076 --- 4.0 --- --- --- 25 --- 250 --- 100 --- -100 --- 160 --- 35 --- 65 --- 45 --- 190 --- 170 --- 130 Ls +LD Total Inductance --- 6.8 --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 4300 1200 200 --- --- --- RDS(on) VGS(th) Gfs IDSS IGSS Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current --- --- Test Conditions V V/C VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 21A VGS = 12V, ID = 34A VDS = VGS, ID = 1.0mA VDS = 15V, ID = 21A VDS = 80V, VGS = 0V VDS = 80V,VGS = 0V,TJ =125C VGS = 20V VGS = -20V ID = 34A VDS = 50V VGS = 12V VDD = 50V ID = 34A RG = 2.35 VGS = 12V V S A nA nC ns Measured from Drain lead (6mm / 0.25 in from package) to Source lead (6mm/ 0.25 in from package) with Source wire internally bonded from Source pin to Drain pad nH VGS = 0V VDS = 25V = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) --- --- 34 ISM Pulsed Source Current (Body Diode) --- --- 136 VSD Diode Forward Voltage --- --- 1.4 V TJ = 25C,IS = 34A, VGS = 0V trr Reverse Recovery Time --- --- 570 ns TJ = 25C, IF = 34A, VDD 50V Qrr Reverse Recovery Charge --- --- 5.8 C di/dt = 100A/s ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A Thermal Resistance Min. Typ. Max. Junction-to-Case Parameter --- --- 0.83 RCS Case -to-Sink --- 0.21 --- RJA Junction-to-Ambient (Typical socket mount) --- --- 48 RJC Units C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = 25C, L =0.86mH, Peak IL = 34A, VGS = 12V ISD 34A, di/dt 140A/s, VDD 100V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A. Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A. 2 2016-07-01 IRHM7150 JANSR2N7268 Radiation Characteristics Pre-Irradiation IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation 100 kRads (Si)1 Parameter 300k - 1000 kRads (Si) 2 Min. Max. Min. Max. Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 100 --- 100 --- V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 1.25 4.5 V VDS = VGS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward --- 100 --- 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse --- -100 --- -100 nA VGS = -20V IDSS Zero Gate Voltage Drain Current --- 25 --- 50 A VDS = 80V, VGS = 0V --- 0.065 --- 0.090 VGS = 12V, ID = 21A --- 0.065 --- 0.090 VGS = 12V, ID = 21A --- 1.4 --- 1.4 V VGS = 0V, ID = 34A RDS(on) RDS(on) VSD Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-254AA) Diode Forward Voltage 1. Part number IRHM7150 (JANSR2N7268) 2. Part numbers IRHM3150 (JANSF2N7268), IRHM4150 (JANSG2N7268) and IRHM8150 (JANSH2N7268) IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area VDS (V) LET (MeV/(mg/cm2)) Energy (MeV) Range (m) @VGS=0V @VGS=-5V Cu 28 285 43 100 100 100 80 60 Br 36.8 305 39 100 90 70 50 --- Ion @VGS=-10V @VGS=-15V @VGS=-20V 120 100 VDS 80 Cu 60 Br 40 20 0 0 -5 -10 -15 -20 -25 VGS Fig a. Typical Single Event Effect, Safe Operating Area For Footnotes, refer to the page 2. 3 2016-07-01 IRHM7150 JANSR2N7268 Pre-Irradiation Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature FOR TEST CIRCUIT SEE FIGURE 13 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 2016-07-01 IRHM7150 JANSR2N7268 Pre-Irradiation Fig 7. Typical Source-Drain Diode Forward Voltage Fig 9. Maximum Drain Current Vs. Case Temperature Fig 8. Maximum Safe Operating Area Fig 10. Maximum Avalanche Energy Vs. Drain Current Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2016-07-01 IRHM7150 JANSR2N7268 Pre-Irradiation V(BR)DSS 15V L VDS tp DRIVER D.U.T RG IAS 20V tp + V - DD 0.01 Fig 12a. Unclamped Inductive Test Circuit Fig 13a. Gate Charge Waveform Fig 14a. Switching Time Test Circuit 6 A I AS Fig 12b. Unclamped Inductive Waveforms Fig 13b. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms 2016-07-01 IRHM7150 JANSR2N7268 Pre-Irradiation Case Outline and Dimensions -- TO-254AA 0.12 [.005] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 6.60 [.260] 6.32 [.249] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 2X B 3 14.48 [.570] 12.95 [.510] 3X 3.81 [.150] 13.84 [.545] 13.59 [.535] 1.27 [.050] 1.02 [.040] 0.84 [.033] MAX. 1.14 [.045] 0.89 [.035] 0.36 [.014] 3.81 [.150] B A NOTES: 1. 2. 3. 4. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR HiRel Headquarters: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 IR HiRel Leominster: 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 IR HiRel San Jose: 2520 Junction Avenue, San Jose, California 95134, USA Tel: (408) 434-5000 Data and specifications subject to change without notice. 7 2016-07-01 IRHM7150 JANSR2N7268 Pre-Irradiation IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. With respect to any example hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties on non- infringement of intellectual property rights and any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's product and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any customer's technical departments to evaluate the suitability of the product for the intended applications and the completeness of the product information given in this document with respect to applications. For further information on the product, technology, delivery terms and conditions and prices, please contact your local sales representative or go to (www.infineon.com/hirel). WARNING Due to technical requirements products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. 8 2016-07-01