Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Light Weight
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings Pre-Irradiation
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 34
A
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 21
IDM Pulsed Drain Current 136
PD @TC = 25°C Maximum Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current 34
A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.063 in./1.6 mm from case for 10s)
Weight 9.3 (Typical) g
°C
TO-254
IRHM7150
JANSR2N7268
1 2016-07-01
Product Summary
Part Number Radiation Level RDS(on) ID
IRHM7150 100 kRads(Si) 0.065 34A
IRHM8150 1000 kRads(Si) 0.065 34A
QPL Part Number
JANSR2N7268
JANSH2N7268
IRHM3150 300 kRads(Si) 0.065 34A JANSF2N7268
IRHM4150 500 kRads(Si) 0.065 34A JANSG2N7268
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
PD-90675E
Description
For Footnotes, refer to the page 2.
100V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD-Hard HEXFET TECHNOLOGY
IR HiRel RAD-Hard HEXFET technology provides high performance
power MOSFETs for space applications. This technology
has over a decade of proven performance and reliability in
satellite applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 1.0mA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.13 ––– V/°C Reference to 25°C, ID = 1.0mA
Static Drain-to-Source On-State ––– ––– 0.065 VGS = 12V, ID = 21A
Resistance ––– –––
0.076 VGS = 12V, ID = 34A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 1.0mA
Gfs Forward Transconductance 8.0 ––– ––– S VDS = 15V, ID = 21A
IDSS Zero Gate Voltage Drain Current ––– ––– 25 µA VDS = 80V, VGS = 0V
––– ––– 250 VDS = 80V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Leakage Forward ––– ––– 100 nA VGS = 20V
Gate-to-Source Leakage Reverse ––– ––– -100 VGS = -20V
QG Total Gate Charge ––– ––– 160
nC
ID = 34A
QGS Gate-to-Source Charge ––– ––– 35 VDS = 50V
QGD Gate-to-Drain (‘Miller’) Charge ––– ––– 65 VGS = 12V
td(on) Turn-On Delay Time ––– ––– 45
ns
VDD = 50V
tr Rise Time ––– ––– 190 ID = 34A
td(off) Turn-Off Delay Time ––– ––– 170 RG = 2.35
tf Fall Time ––– ––– 130 VGS = 12V
Ls +LD Total Inductance ––– 6.8 ––– nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25 in
from package) with Source wire internally
bonded from Source pin to Drain pad
Ciss Input Capacitance ––– 4300 –––
pF
VGS = 0V
Coss Output Capacitance ––– 1200 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 200 ––– ƒ = 1.0MHz
RDS(on)
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– 34
ISM Pulsed Source Current (Body Diode) ––– ––– 136
VSD Diode Forward Voltage ––– ––– 1.4 V TJ = 25°C,IS = 34A, VGS = 0V
trr Reverse Recovery Time ––– ––– 570 ns TJ = 25°C, IF = 34A, VDD ≤50V
Qrr Reverse Recovery Charge ––– ––– 5.8 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L =0.86mH, Peak IL = 34A, VGS = 12V
ISD 34A, di/dt 140A/µs, VDD 100V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.83
°C/W
RCS Case -to-Sink 0.21 –––
RJA Junction-to-Ambient (Typical socket mount) ––– 48
Min.
–––
–––
–––
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Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter 100 kRads (Si)1Units Test Conditions
Min. Max. Min. Max.
BVDSS Drain-to-Source Breakdown Voltage 100 ––– 100 ––– V VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage 2.0 4.0 1.25 4.5 V VDS = VGS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward ––– 100 ––– 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse ––– -100 ––– -100 nA VGS = -20V
IDSS Zero Gate Voltage Drain Current ––– 25 ––– 50 µA VDS = 80V, VGS = 0V
RDS(on)
Static Drain-to-Source
On-State Resistance (TO-3) ––– 0.065 ––– 0.090 VGS = 12V, ID = 21A
RDS(on)
Static Drain-to-Source
On-State Resistance (TO-254AA) ––– 0.065 ––– 0.090 VGS = 12V, ID = 21A
VSD Diode Forward Voltage ––– 1.4 ––– 1.4 V VGS = 0V, ID = 34A
300k - 1000 kRads (Si) 2
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm2)) Energy
(MeV) Range
(µm)
VDS (V)
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
28 285 43 100 100 100 80 60
36.8 305 39 100 90 70 50 –––
Ion
Cu
Br
IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
2. Part numbers IRHM3150 (JANSF2N7268), IRHM4150 (JANSG2N7268) and IRHM8150 (JANSH2N7268)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Fig a. Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
1. Part number IRHM7150 (JANSR2N7268)
0
20
40
60
80
100
120
0-5-10-15-20-25
VGS
VDS
Cu
Br
Radiation Characteristics
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Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
FOR TEST CIRCUIT
SEE FIGURE 13
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Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 8. Maximum Safe Operating Area
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Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
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IR HiRel Headquarters: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR HiRel Leominster: 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
IR HiRel San Jose: 2520 Junction Avenue, San Jose, California 95134, USA Tel: (408) 434-5000
Data and specifications subject to change withou t notice.
Case Outline and Dimensions — TO-254AA
3.81 [.150]
0.12 [.005]
1.27 [.050]
1.02 [.040]
6.60 [.260]
6.32 [.249]
C14.48 [.570]
12.95 [.510]
3X
0.36 [.014] B A
1.14 [.045]
0.89 [.035]
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2X
3.81 [.150]
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
3. CONTROLLING DIMENSION: INCH.
NOTES:
20.32 [.800]
20.07 [.790]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
17.40 [.685]
16.89 [.665]
A
123
13.84 [.545]
13.59 [.535]
0.84 [.033]
MAX.
B
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
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IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
