CPH3356 Ordering number : ENA1124 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH3356 General-Purpose Switching Device Applications Features * * * 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --20 V 10 V Allowable Power Dissipation ID IDP PD 1.0 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Drain Current (Pulse) PW10s, duty cycle1% When mounted on ceramic substrate (900mm2x0.8mm) --2.5 A --10 A Package Dimensions Product & Package Information unit : mm (typ) 7015A-004 * Package : CPH3 * JEITA, JEDEC : SC-59, TO-236, SOT-23 * Minimum Packing Quantity : 3,000 pcs./reel 0.15 Packing Type: TL Marking 0.9 WN 0.05 1.6 0.2 0.6 2.8 0.2 3 1 TL 2 0.95 LOT No. 0.6 2.9 0.4 1 : Gate 2 : Source 3 : Drain Electrical Connection 3 SANYO : CPH3 1 2 http://semicon.sanyo.com/en/network N3011PE TKIM TC-00002675 No. A1124-1/4 CPH3356 Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Ratings Conditions min ID=--1mA, VGS=0V VDS=--20V, VGS=0V typ Unit max --20 V --1 A 10 A Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=8V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--1A 2.7 RDS(on)1 ID=--1A, VGS=--4.5V 105 137 m RDS(on)2 ID=--0.5A, VGS=--2.5V 145 203 m RDS(on)3 ID=--0.1A, VGS=--1.8V 215 323 m Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --0.4 --1.4 V S 250 pF 60 pF Crss 45 pF Turn-ON Delay Time td(on) 5.7 ns Rise Time tr td(off) 11 ns 34 ns Turn-OFF Delay Time Fall Time VDS=--10V, f=1MHz See specified Test Circuit. tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=--10V, VGS=--4.5V, ID=--2.5A 20 ns 3.3 nC 0.65 nC 0.72 IS=--2.5A, VGS=0V nC --0.87 --1.5 V Switching Time Test Circuit 0V --4.5V VIN VDD= --10V ID= --1A RL=10 VIN D PW=10s D.C.1% VOUT G CPH3356 50 ID -- VDS --2.5 --1.2 --3. 5 --8.0V --1.4 Drain Current, ID -- A V --1.6 VDS= --10V --1.0 VGS= --1.5V --0.8 --0.6 --0.4 --2.0 --1.5 5C --25 C --1.8 ID -- VGS --3.0 --1. 8V --4.5V --2.5 V --2.0 --1.0 C --0.5 --0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT14877 0 25 Drain Current, ID -- A S Ta= 7 P.G 0 --0.5 --1.0 --1.5 --2.0 Gate-to-Source Voltage, VGS -- V IT14878 No. A1124-2/4 CPH3356 RDS(on) -- VGS 600 500 ID= --0.1A 400 --0.5A 300 --1.0A 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V 150 100 50 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 IT14880 IS -- VSD 5 VGS=0V 3 = Ta 1.0 --2 C 75 7 C 25 5 3 --1.0 7 5 3 2 25C --25 C C 5 5C 2 Ta= 7 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S .5A = --0 .5V, I D 2 -= VGS .0A I = --1 --4.5V, D V GS= 2 --0.1 7 5 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A --0.01 5 td(off) 10 tr 7 --0.8 --1.0 --1.2 IT14882 f=1MHz 5 td(on) 5 3 Ciss 2 100 Coss 7 5 Crss 3 2 3 2 --0.1 2 3 5 7 2 --1.0 3 Drain Current, ID -- A Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0.5 1.0 1.5 2.0 2.5 Total Gate Charge, Qg -- nC 0 --2 3.0 3.5 IT16663 --4 --6 --8 --10 --12 --14 --16 --18 Drain-to-Source Voltage, VDS -- V --100 7 5 3 2 VDS= --10V ID= --2.5A --4.0 10 5 IT14883 VGS -- Qg --4.5 0 --0.6 7 Ciss, Coss, Crss -- pF tf --0.4 Ciss, Coss, Crss -- VDS 1000 3 2 --0.2 Diode Forward Voltage, VSD -- V VDD= --10V VGS= --4.5V 5 0 IT14881 SW Time -- ID 7 Switching Time, SW Time -- ns = VGS 200 = --0 V, I D --1.8 3 0.1 --0.01 Gate-to-Source Voltage, VGS -- V .1A 0 --60 --40 --10 VDS= --10V 5 250 IT14879 | yfs | -- ID 7 RDS(on) -- Ta 300 Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 700 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --20 IT14884 ASO IDP= --10A (PW10s) 10 1m 0s ID= --2.5A 10 s ms 10 0m DC s op er ati on Operation in this area is limited by RDS(on). Ta=25C Single pulse When mounted on ceramic substrate (900mm2x0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT16664 No. A1124-3/4 CPH3356 PD -- Ta Allowable Power Dissipation, PD -- W 1.2 When mounted on ceramic substrate (900mm2x0.8mm) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT16665 Note on usage : Since the CPH3356 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2011. Specifications and information herein are subject to change without notice. PS No. A1124-4/4