AUTOMOTIVE GRADE AUIRLR2905Z Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET VDSS 55V RDS(on) max. 13.5m ID (Silicon Limited) 60A ID (Package Limited) 42A D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number D-Pak S D-Pak AUIRLR2905Z G Gate D Drain Standard Pack Form Quantity Tube 75 Tape and Reel Left 3000 Package Type AUIRLR2905Z G S Source Orderable Part Number AUIRLR2905Z AUIRLR2905ZTRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 60 ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 43 ID @ TC = 25C IDM PD @TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation 42 240 110 VGS EAS EAS (Tested) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount) Junction-to-Ambient Units A W 0.72 16 57 85 See Fig.15,16, 12a, 12b W/C V mJ A mJ -55 to + 175 C 300 Typ. Max. Units --- --- --- 1.38 50 110 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-12-11 AUIRLR2905Z Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 55 --- --- V VGS = 0V, ID = 250A --- 0.053 --- V/C Reference to 25C, ID = 1mA --- 11 13.5 VGS = 10V, ID = 36A --- --- 20 m VGS = 5.0V, ID = 30A --- --- 22.5 VGS = 4.5V, ID = 15A 1.0 --- 3.0 V VDS = VGS, ID = 250A 25 --- --- S VDS = 25V, ID = 36A --- --- 20 VDS = 55V, VGS = 0V A --- --- 250 VDS = 55V,VGS = 0V,TJ =125C --- --- 200 VGS = 16V nA --- --- -200 VGS = -16V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- 23 8.5 12 14 130 24 33 35 --- --- --- --- --- --- LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- --- --- --- --- --- --- 1570 230 130 840 180 290 --- --- --- --- --- --- Min. Typ. Max. Units --- --- 42 --- --- 240 --- --- --- --- 22 14 1.3 33 21 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Output Capacitance Coss Coss eff. Effective Output Capacitance Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 36A nC VDS = 44V VGS = 5.0V VDD = 28V ID = 36A ns RG = 15 VGS = 5.0V Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz pF VGS = 0V, VDS = 1.0V = 1.0MHz VGS = 0V, VDS = 44V = 1.0MHz VGS = 0V, VDS = 0V to 44V Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 36A, VGS = 0V ns TJ = 25C ,IF = 36A, VDD = 28V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Limited by TJmax , starting TJ = 25C, L = 0.089mH, RG = 25, IAS = 36A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25C, L = 0.089mH, RG = 25, IAS = 36A, VGS =10V. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately 90C. 2 2015-12-11 AUIRLR2905Z 1000 1000 ID, Drain-to-Source Current (A) TOP 100 BOTTOM 10 3.0V 1 0.1 60s PULSE WIDTH Tj = 25C TOP ID, Drain-to-Source Current (A) VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V 100 BOTTOM 10 3.0V 60s PULSE WIDTH Tj = 175C 1 1 10 0.1 100 10 100 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 1000.0 60 T J = 25C 100.0 T J = 175C 10.0 VDS = 10V 60s PULSE WIDTH 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics Gfs, Forward Transconductance (S) ID, Drain-to-Source Current ) 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 3 VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V T J = 175C 50 40 T J = 25C 30 20 10 VDS = 8.0V 380s PULSE WIDTH 0 0 10 20 30 40 50 ID, Drain-to-Source Current (A) Fig. 4 Typical Forward Trans conductance Vs. Drain Current 2015-12-11 AUIRLR2905Z 2500 VGS, Gate-to-Source Voltage (V) 2000 C, Capacitance (pF) 12 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd Ciss 1500 1000 500 Coss Crss VDS= 44V VDS= 28V VDS= 11V 10 8 6 4 2 0 0 1 ID= 36A 10 0 100 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 30 40 50 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.0 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 20 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100.0 T J = 175C 10.0 T J = 25C 1.0 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 10 100sec 1msec 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.1 10msec 0.1 0.2 0.6 1.0 1.4 1.8 VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 10 2.2 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 2015-12-11 AUIRLR2905Z 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) 60 LIMITED BY PACKAGE ID , Drain Current (A) 50 40 30 20 10 0 ID = 30A VGS = 5.0V 1.5 1.0 0.5 25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T C , Case Temperature (C) T J , Junction Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 J 0.02 0.01 R1 R1 J 1 R2 R2 C 1 2 2 Ci= iRi Ci= iRi 0.01 C Ri (C/W) i (sec) 0.765 0.000269 0.6141 0.001614 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-12-11 AUIRLR2905Z 15V + V - DD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS, Single Pulse Avalanche Energy (mJ) D.U.T RG 240 DRIVER L VDS IDID 36A 6.2A BOTTOM 4.3A TOP 200 160 120 80 40 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms 3.0 Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 13a. Gate Charge Waveform VGS(th) Gate threshold Voltage (V) Id 2.5 ID = 250A 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) Fig 14. Threshold Voltage Vs. Temperature Fig 13b. Gate Charge Test Circuit 6 2015-12-11 AUIRLR2905Z 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 15. Typical Avalanche Current Vs. Pulse width Notes on Repetitive Avalanche Curves , Figures 15, 16: EAR , Avalanche Energy (mJ) 60 (For further info, see AN-1005 at www.infineon.com) TOP Single Pulse BOTTOM 1% Duty Cycle ID = 36A 50 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 40 30 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 20 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 10 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] Fig 16. Maximum Avalanche Energy Vs. Temperature 7 EAS (AR) = PD (ave)*tav 2015-12-11 AUIRLR2905Z Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Fig 18a. Switching Time Test Circuit 8 Fig 18b. Switching Time Waveforms 2015-12-11 AUIRLR2905Z D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number AULR2905Z YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-12-11 AUIRLR2905Z D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-12-11 AUIRLR2905Z Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-Pak MSL1 Class M2 (+/- 200V) AEC-Q101-002 Class H1B (+/-1000V) AEC-Q101-001 Class C5 (+/-1125V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 12/11/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. Corrected typo RJA (PCB mount) from "40C/W" to "50C/W" on page 1. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. 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