N-CHANNEL ENHANCEMENT
MODE MOSFET
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limit
Semelab LimitSemelab Limit
Semelab Limited
eded
ed
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8418
Issue 1
Page 1 of 3
VN10KE
• Low RDS(on), VGS(th), CISS And Fast Switching Speeds
• Hermetic TO-52 Metal package.
• Ideally Suited For Power Supply Circuits, Switching And
Driver (Relay, Solenoid, Lamp etc..) Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VDS Drain – Source Voltage 60V
VGS Gate – Source Voltage +15V, -0.3V
ID Continuous Drain Current TA = 25°C 0.17A
TA = 100°C 0.11A
IDM Pulsed Drain Current
(1)
1.0A
PD Total Power Dissipation at TA = 25°C 312.5mW
Derate Above 25°C 2.5mW/°C
TJ Operating Temperature Range -55 to +150°C
Tstg Storage Temperature Range -55 to +150°C
THERMAL PROPERTIES
Symbols Parameters Min. Typ. Max. Units
RθJA
Thermal Resistance, Junction To Ambient 400 °C/W
Notes
NotesNotes
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
N-CHANNEL ENHANCEMENT
MODE MOSFET
VN10KE
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8418
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
BVDSS Drain-Source Breakdown
Voltage VGS = 0 ID = 100µA 60 V
VGS(th) Gate Threshold Voltage VDS = VGS ID = 1.0mA 0.8 2.5 V
IGSS Gate-Source Leakage Current VGS = 15V VDS = 0V 100 nA
VDS = 48V VGS = 0 10
IDSS Zero Gate Voltage
Drain Current TJ = 125°C 500
µA
ID(ON)
(2)
On-State Drain Current VDS = 10V VGS = 10V 0.75 A
VGS = 5V ID = 0.2A 7.5
VGS = 10V ID = 0.5A 5
RDS(on)
(2)
Static Drain-Source
On-State Resistance
TJ = 125°C 9
Ω
gfs
(2)
Forward Transconductance VDS = 10V ID = 0.5A 100
gos
(2)
Common Source
Output Conductance VDS = 7.5V ID = 50mA 0.2
mƱ
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 60
Coss Output Capacitance VDS = 25V 25
Crss Reverse Transfer Capacitance f = 1.0MHz 5
pF
td(on) Turn-On Delay Time VDD = 15V, RL= 23Ω, RG = 50Ω 10
td(off) Turn-Off Delay Time ID = 1.0A, VGEN = 10V 10
ns
Notes
NotesNotes
Notes
(2) Pulse Width ≤ 300us, δ ≤ 2%
N-CHANNEL ENHANCEMENT
MODE MOSFET
VN10KE
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8418
Issue 1
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
13
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5
.
3
3
(
0
.
2
1
0
)
4
.
3
2
(
0
.
1
7
0
)
1
2
.
7
(
0
.
5
0
0
)
m
i
n
.
3.81 (0.150)
2.93 (0.115)
12.7 (0.500)
min.
TO
-
52
PACKAGE
(TO
-
20
6
A
C
)
Underside View
Pin 1 - Source Pin 2 - Gate Pin 3 - Case & Drain
