NPN General Pupose Amplifier
This device is designed for use as a medium power amplifier and
switch requiring collector currents up to 500 mA.
MMBT44012N4401
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Em itter Vol t age 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V
IC
Collector Current - Continuous 600 mA
TJ, Tst
g
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N4401 *MMBT4401
PDTotal De vice Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Resist ance, Ju nctio n to Case 83.3 °C/W
RθJ
A
Thermal Resistance, Junction to Ambient 200 357 °C/W
CBETO-92
C
B
E
SOT-23
Mark: 2X
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N4401 / MMBT4401
2N4401/MMBT4401, Rev A
3
2N4401 / MMBT4401
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(
BR
)
CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
V
(
BR
)
CBO Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 60 V
V
(
BR
)
EBO Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 6.0 V
IBL Base Cuto ff Current VCE = 35 V, VEB = 0.4 V 0.1 µA
ICEX Collector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 µA
ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 150 mA, VCE = 1.0 V
IC = 500 mA, VCE = 2.0 V
20
40
80
100
40 300
VCE(sat)Collecto r-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA 0.4
0.75 V
V
VBE(sat)Base-Emitter Saturation Vo ltage IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA 0.75 0.95
1.2 V
V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 20 mA, VCE = 10 V,
f = 100 MHz 250 MHz
Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0,
f = 140 kHz 6.5 pF
Ceb Emitter-Base Capacitance VBE = 0.5 V, IC = 0,
f = 140 kHz 30 pF
hie Input Impedance IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz 1.0 15 kΩ
hre Voltage Feedback Ratio IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz 0.1 8.0 x 10-4
hfe Sma ll-Signal Curre nt Gain IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz 40 500
hoe Output Admittance IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz 1.0 30 µmhos
SWITCHING CHARACTERISTICS
td
Delay Time VCC = 30 V, VEB = 2 V, 15 ns
t
r
Rise Time IC = 150 mA, IB1 = 15 mA 20 ns
tsStorage Time VCC = 30 V, IC = 150 mA 225 ns
tfFall Time IB1 = IB2 = 15 mA 30 ns
*Pulse Test: Pulse Wid th ≤ 300 µs, Duty Cycle ≤ 2.0%
Symbol Parameter Test Conditions Min Max Units
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PUL SED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
Co l lec to r- Emitter Sa tu r atio n
Vol t age vs Coll ect or Curr ent
110100500
0.1
0.2
0.3
0.4
I - CO LL E CTO R CU RRE NT (m A)
V - COL LE C TOR-EMI TT E R VOLT AGE (V)
CESAT
25 °C
C
β= 10
125 °C
- 40 °C
B a se-Emitte r Sa turation
Vo lt age vs Co l lector Current
1 10 100 500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE- E MITTER VO LTAGE (V)
BESAT
C
β= 1 0
25 °C
125 °C
- 40 °C
Base-Emitter ON Voltag e vs
Collector Current
0.1 1 10 25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOL TAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
Collector-Cutoff Current
vs Ambient Temp erature
25 50 75 100 125 150
0.1
1
10
100
500
T - AM BIENT T EMPE RATURE ( C)
I - CO L LECTOR CUR R ENT ( n A)
A
V = 40V
CB
CBO
°
Emitter Transiti on and Output
Capacitance vs Reverse Bias Voltage
0.1 1 10 100
4
8
12
16
20
RE VERSE BIAS VOLTAGE ( V)
CAPACITANCE (pF)
f = 1 MHz
Cob
C
NPN General Purpose Amplifier
te
(continued)
2N4401 / MMBT4401
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperatur e
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPER ATURE ( C)
P - POWER DISSIPATI ON (W )
D
o
SOT-223
TO-92
SOT-23
Turn O n and Turn Off Times
vs Collecto r Current
10 100 1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TIM E (nS)
I = I =
ton
t
off
B1
C
B2 Ic
10
V = 25 V
cc
S wi t ching Times
vs Col lecto r C urre nt
10 100 1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
tr
t
s
B1
C
B2 Ic
10
V = 25 V
cc
tf
td
NPN General Purpose Amplifier
(continued)
2N4401 / MMBT4401
Typical Common Emitter Characteristics (f = 1.0kHz)
Commo n Emit te r Cha racteri stics
0 102030405060
0
2
4
6
8
I - COLLECTOR CURRENT (mA)
CHAR. RELATIVE TO VALUES AT I = 10mA
V = 10 V
CE
C
C
T = 25 C
A o
hoe
h re
hfe
hie
Comm o n Emit te r Ch ar acte ri st ics
0 20406080100
0
0.4
0.8
1.2
1.6
2
2.4
T - AMBI ENT TE MPERATURE ( C)
CHAR. RE LATIVE TO VALUES AT T = 25 C
V = 1 0 V
CE
A
A
I = 1 0 mA
C
hoe
hre
hfe
hie
o
o
Common Emi tter Ch aracteristics
0 5 10 15 20 25 30 35
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
1.25
1.3
V - COLL ECTO R VOLTAGE ( V)
CHAR. RELATIVE TO VALUES AT V = 10V
CE
CE
T = 25 C
A o
hoe
h re
h fe
hie
I = 10 mA
C
NPN General Purpose Amplifier
(continued)
2N4401 / MMBT4401
Test Circuits
30 V
1.0 KΩΩ
ΩΩ
Ω
16 V
0
≤≤
≤≤
≤ 200ns
≤≤
≤≤
≤ 200ns
500 ΩΩ
ΩΩ
Ω
200 ΩΩ
ΩΩ
Ω
50 ΩΩ
ΩΩ
Ω
37 ΩΩ
ΩΩ
Ω
- 1.5 V
1.0 KΩΩ
ΩΩ
Ω
6.0 V
0
30 V
FIGURE 1: Saturated Turn-On Switching Timer
NOTE: BV = 5.0 V
FIGURE 2: Saturated Turn-Off Switching Time
EBO 1k
NPN General Purpose Amplifier
(continued)
2N4401 / MMBT4401
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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