VSM = 5200 V ITAVM = 1800 A ITRMS = 2830 A ITSM = 29000 A VT0 = 1.02 V rT = 0.320 m Bi-Directional Control Thyristor 5STB 17N5200 Doc. No. 5SYA1036-03 Sep. 01 * Two thyristors integrated into one wafer * Patented free-floating silicon technology * Designed for traction, energy and industrial applications * Optimum power handling capability * Interdigitated amplifying gate. The electrical and thermal data are valid for one thyristor half of the device. Blocking Part Number 5STB 17N5200 5STB 17N5000 5STB 17N4600 Conditions VSM 5200 V 5000 V 4600 V f = 5 Hz, tp = 10ms VRM 4400 V 4200 V 4000 V f = 50 Hz,tp = 10ms ISM 400 mA VSM IRM 400 mA VRM dV/dtcrit 2000 V/s @ Exp. to 0.67xVSM VRM is equal to VSM up to Tj = 110C Mechanical data FM a Mounting force nom. 90 kN min. 81 kN max. 108 kN Acceleration Device unclamped 50 m/s2 Device clamped 100 m/s2 m Weight 2.9 kg DS Surface creepage distance 53 mm Da Air strike distance 22 mm ABB Semiconductors AG reserves the right to change specifications without notice. Tj = 125C 5STB 17N5200 On-state ITAVM ITRMS Max. average on-state t Max. RMS on-state current ITSM Max. peak non-repetitive 29000 A tp = 10 ms Tj = 125C surge current 31000 A tp = 8.3 ms After surge: 4205 kA2s tp = 10 ms VD = VR = 0V 3990 kA2s tp = 8.3 ms I2t 1800 A Half sine wave, TC = 70C 2830 A Limiting load integral VT On-state voltage 1.68 V IT = 2000 A VT0 Threshold voltage 1.02 V IT = 1000 - 3000 A rT Slope resistance 0.320 m IH Holding current 50-250 mA Tj = 25C 25-150 mA Tj = 125C 100-500 mA Tj = 25C 50-300 mA Tj = 125C IL Latching current Tj = 125C Switching di/dtcrit Critical rate of rise of on-state current 250 A/s Cont. f = 50 Hz VD 0.67VDRM , Tj = 125C 500 A/s 60 sec. f = 50Hz ITRM = 3000 A IFG = 2 A, tr = 0.5 s IFG = 2 A, tr = 0.5 s td Delay time 3.0 s VD = 0.4VDRM tq Turn-off time 700 s VD 0.67VDRM ITRM = 3000 A, Tj = 125C dvD/dt = 20V/s VR > 200 V, diT/dt = -1.5 A/s Qrr Recovery charge min 4000 As max 5200 As Triggering VGT Gate trigger voltage 2.6 V Tj = 25C IGT Gate trigger current 400 mA Tj = 25C VGD Gate non-trigger voltage 0.3 V VD = 0.4VRM Tj = 125C IGD Gate non-trigger current 10 mA VD = 0.4VRM Tj = 125C VFGM Peak forward gate voltage 12 V IFGM Peak forward gate current 10 A VRGM Peak reverse gate voltage 10 V PG Maximum gate power loss 3W ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1036-03 Sep. 01 page 2 of 6 5STB 17N5200 Thermal Tj Operating junction temperature range -40...125 C Tstg Storage temperature range -40...150 C RthJC Thermal resistance 22.8 K/kW Anode side cooled junction to case 22.8 K/kW Cathode side cooled 11.4 K/kW Double side cooled Thermal resistance case to 4 K/kW Single side cooled heat sink 2 K/kW Double side cooled Analytical function for transient thermal impedance: ZthJC [K/kW] 15 n ZthJC(t) = a Ri(1 - e - t/ i ) i =1 180 sine: add 1 K/kW 180 rectangular: add 1 K/kW 120 rectangular: add 1 K/kW 60 rectangular: add 2 K/kW 10 5 i 1 2 3 4 Ri(K/kW) 6.77 2.51 1.34 0.78 i(s) 0.8651 0.1558 0.0212 0.0075 Fm = 81..108 kN Double-side cooling 0 0.001 BN1 RthCH 0.010 0.100 1.000 10.000 t [s] Fig. 1 Transient thermal impedance junction to case. On-state characteristic model: VT = A + B iT + C ln(iT +1) + D IT Valid for iT = 500 - 4000 A A B C D 1.309 0.00008 -0.125 0.026 Fig. 2 On-state characteristics. Fig. 3 On-state characteristics. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1036-03 Sep. 01 page 3 of 6 5STB 17N5200 Tcase (C) 130 Double-sided cooling 125 120 DC 180 rectangular 180 sine 120 rectangular 115 110 105 100 95 90 85 5STB 17N5200 80 75 70 0 500 1000 1500 2000 2500 3000 ITAV (A) Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. Fig. 6 Surge on-state current vs. pulse length. Half-sine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1036-03 Sep. 01 page 4 of 6 5STB 17N5200 Fig. 8 Gate trigger characteristics. Fig. 9 Max. peak gate power loss. IRM(A) Qrr(As) 103 30000 800 700 600 500 ITRM = 3000 A 20000 Tj = Tjmax ITRM = 3000 A Tj = Tjmax 400 300 104 200 8000 7000 6000 102 5000 3000 2000 1 2 3 4 30 30 20 -diT/dt (A/s) 5 6 7 8 910 5STB 17N5200 80 70 60 5STB 17N5200 4000 Fig. 10 Recovery charge vs. decay rate of onstate current. 1 2 3 4 5 6 7 8 910 20 30 -diT/dt (A/s) Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. Turn - off time, typical parameter relationship. 1.3 f 2 (-di T /dt) 1.2 1.0 Fig. 12 tq/tq1 = f1(Tj) 5STB 17N5200 1.1 0 4 8 12 16 20 24 Fig. 13 tq/tq1 = f2(-diT/dt) tq = tq1 * f1(Tj) * f2(-diT/dt) * f3(dv/dt) 28 32 - diT/dt (A/s) Fig. 14 tq/tq1 = f3(dv/dt) tq1 :at normalized values (see page 2) tq : at varying conditions ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1036-03 Sep. 01 page 5 of 6 5STB 17N5200 Turn-on and Turn-off losses Won (Ws/pulse) Won (Ws/pulse) 3.0 5 tp = 1 ms di/dt = 10 A/s di/dt = 5 A/s di/dt = 2 A/s di/dt = 1 A/s 2.5 tp = 2 ms 4 tp = 5 ms 2.0 tp = 10 ms 3 5STB 17N5200 1 0 0 1 2 3 4 5 6 7 8 5STB 17N5200 1.5 2 1.0 0.5 0.0 0 1 2 3 4 5 6 8 IT (kA) Fig. 15Won = f(IT, tP), Tj = 125 C. Fig. 16Won = f(IT, di/dt), Tj = 125 C. Half sinusoidal waves. Rectangular waves. Woff (Ws/pulse) Woff (Ws/pulse) 18 10 9 ITRM = 8000 A 16 8 ITRM = 6000 A 14 7 ITRM = 4000 A 12 6 di/dt di/dt di/dt di/dt = 10 A/s = 5 A/s = 2 A/s = 1 A/s 10 5 8 3 2 1 0 6 5STB 17N5200 5STB 17N5200 4 0.0 7 IT (kA) 4 2 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 V0 (kV) 0.0 0.4 0.8 1.2 1.6 2.0 Fig. 17Woff = f(V0, IT), Tj = 125 C. Fig. 18Woff = f(V0,di/dt), Tj = 125 C. Half sinusoidal waves. tP = 10 ms. Rectangular waves. 2.4 2.8 V0 (kV) ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1036-03 Sep. 01