CTT27
Thyristor-Thyristor Modules
Type
CTT27GK08
CTT27GK12
CTT27GK14
CTT27GK16
CTT27GK18
VRRM
VDRM
V
800
1200
1400
1600
1800
VRSM
VDSM
V
900
1300
1500
1700
1900
Dimensions in mm (1mm=0.0394")
Symbol Test Conditions Maximum Ratings Unit
TVJ=TVJM
TC=85oC; 180o sine 50
27 A
TVJ=45oC t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
520
560
460
500
A
ITSM, IFSM
TVJ=45oC t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
1350
1300
1050
1030
A2s
i2dt
(di/dt)cr
150
500 A/us
(dv/dt)cr TVJ=TVJM; VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise) 1000 V/us
PGM TVJ=TVJM tp=30us
IT=ITAVM tp=300us 10
5W
PGAV 0.5 W
ITRMS, IFRMS
ITAVM, IFAVM
oC
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
VISOL 50/60Hz, RMS t=1min
IISOL<1mA t=1s 3000
3600 V~
MdMounting torque (M5)
Terminal connection torque (M5)
_
2.5-4.0/22-35
2.5-4.0/22-35 Nm/lb.in.
Weight 90 g
TVJ=TVJM repetitive, IT=45A
f=50Hz, tp=200us
VD=2/3VDRM
IG=0.45A non repetitive, IT=ITAVM
diG/dt=0.45A/us
VRGM 10 V
Typical including screws
DEECorp.
http://store.iiic.cc/
CTT27
Thyristor-Thyristor Modules
Symbol Test Conditions Characteristic Values Unit
V
VT, VFIT, IF=80A; TVJ=25oC 1.64
VTO For power-loss calculations only (TVJ=125oC) 0.85 V
rT11 m
VD=6V; TVJ=25oC
TVJ=-40oC
VGT 1.5
1.6 V
VD=6V; TVJ=25oC
TVJ=-40oC
IGT 100
200 mA
VGD TVJ=TVJM; VD=2/3VDRM 0.2 V
IGD 10 mA
IHTVJ=25oC; VD=6V; RGK= 200 mA
TVJ=25oC; tp=10us; VD=6V
IG=0.45A; diG/dt=0.45A/us 450 mAIL
per thyristor/diode; DC current
per module
RthJC 0.88
0.44 K/W
per thyristor/diode; DC current
per module
RthJK 1.08
0.54 K/W
dSCreeping distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM 3 mA
TVJ=25oC; VD=1/2VDRM
IG=0.45A; diG/dt=0.45A/us
tgd 2us
TVJ=TVJM; IT=20A; tp=200us; -di/dt=10A/us typ.
VR=100V; dv/dt=20V/us; VD=2/3VDRM
tq150 us
uC
QSTVJ=TVJM; IT, IF=25A; -di/dt=0.64A/us 50
IRM 6 A
FEATURES
* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
* UL registered, E 72873
* Gate-cathode twin pins for version 1
ADVANTAGES
* Space and weight savings
* Simple mounting with two screws
* Improved temperature and power
cycling
* Reduced protection circuits
APPLICATIONS
* DC motor control
* Softstart AC motor controller
* Light, heat and temperature
control
DEECorp.
http://store.iiic.cc/
CTT27
Thyristor-Thyristor Modules
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
100101102103104
0.1
1
10
IG
VG
mA
1: IGT, TVJ = 125oC
2: IGT, TVJ = 25oC
3: IGT, TVJ = -40oC
V
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
IGD, T VJ = 125oC
3
4
2
156
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode) Fig. 4 Gate trigger characteristics
10 100 1000
1
10
100
1000
mA
IG
s
tgd
Limit
typ.
TVJ = 2 5oC
Fig. 6 Gate trigger delay time
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current
at case temperature
DEECorp.
3 x CTT27
http://store.iiic.cc/
CTT27
Thyristor-Thyristor Modules
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.88
180oC0.92
120oC0.95
60oC0.98
30oC1.01
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.019 0.0031
2 0.029 0.0216
3 0.832 0.191
RthJK for various conduction angles d:
d RthJK (K/W)
DC 1.08
180oC1.12
120oC1.15
60oC1.18
30oC1.21
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.019 0.0031
2 0.029 0.0216
3 0.832 0.191
4 0.2 0.45
DEECorp.
3 x CTT27
CTT27
CTT27
http://store.iiic.cc/
