NALA MA4ST550 Series High Q Silicon Hyperabrupt Tuning Varactors 30 134 Description The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low parasitic capacitance microwave packages or in chip form. The MA4ST550 series of diodes is available in a RETMA series with junction capacitances of approximately 0.8 pF to 8.2 pF at 4 volts. All junctions are made with an ion implan- tation process which assures repeatable C-V character- istics from lot to lot. These devices have capacitance change ratios as high as 7:1. Features @ HIGH Q M@ USABLE CAPACITANCE CHANGE OF 7:1 @ LOW REVERSE LEAKAGE FOR GOOD POST TUNING DRIFT CHARACTERISTICS @ REPRODUCIBLE C-V CURVES Applications The MA4ST550 series is appropriate for use in VCOs with frequencies within the range of ~ 1-14 GHz where a large capacitance change is required. These devices are ideally suited for VCOs in missile seekers, telecommunication systems and electronic warfare systems with critical post tuning drift specifications. M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 n 800-366-2266 139 MA4ST550 Series High Q Silicon Hyperabrupt Tuning Varactors Specifications @ Ta = 25C Breakdown Voltage = 22 volts minimum at 10 microamps Reverse Current = 50 nAmps maximum @ 20 volts and 25C Total Capacitance?:3 Total Capacitance2.3 Minimum Q4 Model Case! @ AV (pF) @ 20V (pF) @ ~4 Volts Number Style Min./Max. Min./Max. 50 MHz MA4ST551 30 .72-.88 0.30-0.38 650 MA4ST552 30 -90-1.10 0.34-0.42 650 MA4ST553 30 1.08-1.32 0.38-0.48 600 MA4ST554 30 1.35-1.65 0.43-0.58 600 MA4ST555 30 1.62-1.98 0.51-0.68 550 MA4ST556 30 1.98-2.42 0.58-0.78 550 MA4ST557 30 2.43-2.97 0.68-0.88 500 MA4ST558 30 2.97-3.69 0.82-1.02 500 MA4ST559 30 3.51-4.29 0.93-1.18 450 MA4ST560 30 4.23-5.16 1.13-1.43 450 MA4ST561 30 5.04-6.16 1.33-1.63 450 MA4ST562 30 6.12-7.48 1.58-1.98 400 MA4ST563 30 7.38-9.02 1.88-2.38 400 NOTES . The standard case style is 30. Other packages and chips shown at the bottom of this page are available upon request. When ordering, specify the desired case style by adding the case designation as a suffix to the model number, i.e. MA4ST552-134 is a 15 X 15 mil chip diode. iS) . Capacitance is measured at 1 MHz using a shielded test holder. The normal tolerance at -4 volts is + 10%. Closer tolerances are available upon request for an additional charge. By adding the suffix A to the model number, a tolerance of +5% can be obtained. MAXIMUM RATINGS Reverse Voltage Same as Breakdown Voltage Operating Temperature - 65C to + 150C - 65C to + 150C Temperature Coefficient 400 ppm/C at - 4 volts Storage Temperature HIGH RELIABILITY All diodes in the MA4ST550 series may be screened to TX, TXV specifications. For further high reliability information contact the factory. 3. The total capacitance values shown are for devices housed in case style 30. Other case styles will result in different values due to different case parsasitics. Case parasitics (C , and L g) are given for available case styles along with the outline drawings in this bulletin. The C, values are listed along with the outline drawings in this bulletin. The Cpvalues listed typically have tolerances of + .02 pF. 4. Diode Q is measured by the DeLoach technique at -4 volts and extrapolated to 50 MHz. ENVIRONMENTAL PERFORMANCE All tuning varactors in the MA4ST550 series are capable of meeting the performance tests dictated by the methods and procedures of the latest revisions of MIL-S-19500, MIL-STD-202 and MIL-STD-750 which specify mechanical, electrical, therma! and other environmental tests common to semiconductor products. Case Styles =F 30 31 94 120 134 M/A-COM, Inc. 43 South Ave, Burlington, MA 01803 a 800-366-2266 140 MA4STS550 Series High Q Silicon Hyperabrupt Tuning Varactors Typical Performance Curves 30 20 15 = yy We MAO MA4ST563 8 MA4ST557 NOMINAL TOTAL CAPACITANCE (pF) 1 6.81.0 2.03.0 7.010.0 20 30 507010 REVERSE BIAS VOLTAGE + (=.7 VOLTS) FIGURE 1. Capacitance vs. Reverse Bias Voltage (MA4ST551-563) in ODS-30. 10 9 8 7 - 2 3 NOMINAL JUNCTION CAPACITANCE RATIO Co/Cy, 7 5 678910 REVERSE BIAS VOLTAGE (VOLTS) = wo NOMINAL TOTAL CAPACITANCE RATIO C5/Cy, - w nN 3. 4 MA4ST561 MA4ST559 MA4ST557 MA4ST555 1 MA4ST553 1 MA4ST551 5 678 10 20 REVERSE BIAS VOLTAGE (VOLTS) FIGURE 2. Capacitance Ratio C2/Cy vs. Reverse Bias Voltage (MA4ST551-563) in ODS-30. 20 FIGURE 3. Capacitance Ratio C2/Cy vs. Reverse Bias (MA4ST551-563) Chip Diodes (ODS-134). re = o 10 Zz 8 = 6 GS 4 & 3 x 2 2 MA4STS63 6 1 F 1.0 3 08 3 06 MA4ST557 J oof Uneel 0. Zo. 2 = 3 z 0. 4 6.810 2 20 4 6 810 REVERSE BIAS VOLTAGE + (=.7 VOLTS) 40 60 100 FIGURE 4. Capacitance vs. Reverse Bias Voltage (MA4ST551-563) Chips (ODS-134). NOMINAL TOTAL CAPACITANCE RATIO C5/Cy, = > OT OAnawo -_ 2 3 4 MA4ST556 MA4ST555 MAAST554 MA4ST552 1 5 6 8 10 2 REVERSE BIAS VOLTAGE (VOLTS) FIGURE 5. Capacitance Ratio C,/Cy vs. Reverse Bias (MA4ST551-556) in ODS-30. M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 141