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2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC5200/FJL4315 Rev. C 1
January 2009
2SC5200/FJL4315
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
• High Current Capability: IC = 17A.
• High Power Dissipation : 150watts.
• High Frequency : 30MHz.
• High Voltage : VCEO=250V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SA1943/FJL4215.
• Thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO3P package, 2SC5242/FJA4313 : 130 watts
-- TO220 package, FJP5200 : 80 watts
-- TO220F package, FJPF5200 : 50 watts
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings ar e limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta=25°C unless otherwise noted
* Device mounted on min imu m pad size
hFE Classification
Symbol Parameter Ratings Units
BVCBO Collector-Base Voltage 250 V
BVCEO Collector-Emitter Voltage 250 V
BVEBO Emitter-Base Voltage 5 V
ICCollector Current(DC) 17 A
IBBase Current 1.5 A
PDTotal Device Dissipation(TC=25°C)
Derate above 25°C150
1.04 W
W/°C
TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C
Symbol Parameter Max. Units
RθJC Thermal Resistance, Junction to Case 0.83 °C/W
Classification R O
hFE1 55 ~ 110 80 ~ 160
1.Base 2.Collector 3.Emitter
1TO-264
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC5200/FJL4315 Rev. C 2
Electrical Characteristics* Ta=25°C unless otherwise noted
* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%
Ordering Information
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=5mA, IE=0 250 V
BVCEO Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞250 V
BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 5 V
ICBO Collector Cut-off Current VCB=230V, IE=0 5.0 µA
IEBO Emitter Cut-off Current VEB=5V, IC=0 5.0 µA
hFE1 DC Current Gain VCE=5V, IC=1A 55 160
hFE2 DC Current Gain VCE=5V, IC=7A 35 60
VCE(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V
VBE(on) Base-Emitter On Voltage VCE=5V, IC=7A 1.0 1.5 V
fTCurrent Gain Bandwidth Product VCE=5V, IC=1A 30 MHz
Cob Output Capacitance VCB=10V, f=1MHz 200 pF
Part Number Marking Package Packing Method Remarks
2SC5200RTU C5200R TO-264 TUBE hFE1 R grade
2SC5200OTU C5200O TO-264 TUBE hFE1 O grade
FJL4315RTU J4315R TO-264 TUBE hFE1 R grade
FJL4315OTU J4315O TO-264 TUBE hFE1 O grade
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC5200/FJL4315 Rev. C 3
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain ( R grade )
Figure 3. DC current Gain ( O grade ) Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Base-Emitter Saturat ion Voltage
0 2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10
12
14
16
IB = 0
IB=200mA
IB = 120mA
IB = 140mA
IB = 160mA
IB = 180mA
IB = 100mA
IB = 60mA
IB = 80mA
IB = 40mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
110
1
10
100
Vce=5V
Tj=-25oC
Tj=25oC
Tj=125oC
hFE, DC CURRENT GAIN
Ic [A ], CO L L EC T OR CU R RE NT
110
1
10
100
Vce=5V
Tj=-25oC
Tj=25oC
Tj=125oC
hFE, DC CURRENT GAIN
Ic [A ], CO L L EC T OR CU R RE NT
0.1 1 10
1
10
100
1000
10000
Ic=10Ib
Tj=-25oC
Tj=25oC
Tj=125oC
Vce(sat)[mV], SATURATION VOLTAGE
Ic[A], C OLL E CTOR CU RR EN T
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
2
4
6
8
10
12 VCE = 5V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
0.1 1 10
100
1000
10000
Ic=10Ib
Tj=-25oCTj=25oC
Tj=125oC
Vbe(sat)[mV], SATURATION VOLTAGE
Ic[A], COLLECTOR CURRENT
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC5200/FJL4315 Rev. C 4
Typical Characteristics
Figure 7. Power Derating Figure 8. Safe Operating Area
Figure 9. Power Derating
1E-6 1E-5 1E-4 1E-3 0.01 0.1 1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Transient Thermal Resistance, Rthjc[oC / W]
Pulse duration [sec] 110100
0.01
0.1
1
10
100
*SINGLE NONREPETITIVE
PULSE TC=25[oC]
10ms*
100ms*
DC
IC MAX . (Pulsed*)
IC MAX. (DC)
IC [A], COLLECTOR CURRENT
VCE [V ], C OLLEC T OR -E MITT E R VO L TAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
PC[W], POWER DISSI PA TION
TC[oC], CASE TEMPERATURE
5.20
4.80
0.15
3.70
3.30
20.20
19.80
3.50
3.10
C
1.25
0.90
C
2.70
2.30
2X
20.50
19.50
C
C
6.20
5.80
20.20
19.80
R
1.00
C
C
9.10
8.90
1.70
1.30
3.20
2.80
5.75
5.15
5.75
5.15
1.00
4.05
0.50
R
2.00
C
0.254
M
A B
0.254
A B
B
5.20
4.80
3.10
2.50
C
0.85
0.50
C
1.50
2.00
A
18.30
17.70
21.62
21.02
7.40
7.00
2.60
2.40
C
16.60
12.00
1.20
0.80
1.50 1.50
NOTES:
A. PACKAGE REFERENCE: JEDEC TO264
VARIATION AA.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C
OUT OF JEDEC STANDARD VALUE.
D. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
E. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
F. THIS PACKAGE IS INTENDED ONLY FOR
"FS PKG CODE AR"
G. DRAWING FILE NAME: TO264A03REV2
FRONT VIEW
SIDE VIEW
BACK VIEW
BOTTOM VIEW
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1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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