2013. 7. 08 1/1
SEMICONDUCTOR
TECHNICAL DATA
KTC9018
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
·Small Reverse Transfer Capacitance
: Cre=0.65pF(Typ.).
·Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz.
·High Transition Frequency : fT=800MHz(Typ.).
MAXIMUM RATING (Ta=25℃)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : hFE Classification E:40～59, F:54～80, G:72～108, H:97～146, I:130～198
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 0.1 μA
Emitter Cut-off Current IEBO VEB=4V, IC=0 -- 0.1 μA
DC Current Gain hFE (Note) VCE=5V, IC=1mA 40 - 198
Reverse Transfer Capacitance Cre VCE=6V, f=1MHz, IE=0 - - 1.0 pF
Transition Frequency fTVCE=10V, IC=8mA, f=100MHz 500 800 - MHz
Collector-Base Time Constant CC·rbb’ VCE=6V, IE=-1mA, f=30MHz -- 30 pS
Noise Figure NF
VCE=6V, IE=-1mA, f=100MHz
-- 4.0
dB
Power Gain Gpe 15 - -
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 4 V
Collector Current IC20 mA
Emitter Current IE-20 mA
Collector Power Dissipation *PC
625
mW
400
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
*Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
