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RF MOSFET Power Transistor, IOOW, 28V
100 - 500 MHz UF281 OOV
Features
l N-Channel Enhancement &lode Device
l DMOS Structure
l Lower Capacitances for Broadband Operation
l High Saturated Output Power
l Lower Noise Figure Than Competitive Devices
Absolute Maximum Ratings at 25°C
I Parameter ( Symbol 1 Rating ( Units
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
JunctionTemperature
Storage Temperature
Thermal Resistance
V DS 65 V
V GS 20 V
‘DS 12 A
PD 250 W
TJ 200 “C
T sic -55 to +150 “C
8 IP 0.7 “crw
Electrical Characteristics at 25°C
v2.00
_____.._~~
Parameter
Drain-Source Breakdown Voltage
Drain-Source LeakageCurrent
Gate-Source Leakage Current
Symbol Min Max Units lest Conditions
BV,,, 65 - V V,.=O.O V. I& 5.0 mA
I
DSS 3.0 mA V,,=28.0 V, V,,=O.O V’
, ,
‘GSS ) 3.0 ] fl 1 v,,=2ov, vDs=o.o v
I I
Gate Threshold Voltage V GSIW 2.0 6.0 V V,,=lO.O V, 1,,=300.0 mA‘
ForwardTransconductance GM 1.5 - S V,,=10.0 V, 1,,=3000.0 mA, AV,,=l .O V, 80 us Pulse’
input Capacitance c -
15s 135 pF V,,=28.0 V, F=l .O MHz’
Output Capacitance C ass 90 PF V,,=28.0 V, F=l .O MHz’
Reverse Capacitance C RSS 24 pF V,,=28.0 V, F=l .O MHz’
Power Gain GP 10 - dB V,,=28.0 V, 1,,=600.0 mA, P,,$OO.O W, F=SOO MHz
Drain Efficiency 50 - % V,,=28.0 V, 1,,=600.0 mA, P,,,=lOO.O W. F=500 MHZ
. Load Mismatch Tolerance VSWR-T - 3O:l - V,,=28.0 V, lDD=800.0 mA, PbbylOO.0 W, F=500 MHz
- Per Side
Specifications Subject to Change Wiihout Notice.
M/A-COM, Inc.
NoFth America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 n Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
RF MOSFET Power Transistor, lOOW, 28V UF281 OOV
v2.00
Typical Broadband Performance Curves
EFFICIENCY vs FREQUENCY
80 P,,=lO W I,,=600 mA (Push-Pull Device) POWER OUTPUT vs SUPPLY VOLTAGE
120 P&O W I,,=600 mA F&O0 MHz
loo
0
100 200 300 400 500 14 16 20 24 26 22
FREQUENCY (MHz) SUPPLY VOLTAGE(V)
POWER OUTPUT vs POWER INPUT
V,,=28 V I,,=600 mA (Push-Pull Device)
2 4 6 8 10 12
POWER INPUT(W)
Specifications Subject to Change Without Notice. M/A-COM, Inc.
North America: Tel. (800) 366-2266 w Asia/Pacific: Tel. +81 (03) 3226-1671 n Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
RF MOSFET Power Transistor, IOOW, 28V UF281 OOV
v2.00
Typical Device Impedance
Frequency (MHz)
100
300
500
7
5, (OHMS) Z,,,, (OHMS)
4.5 - j 6.0 14.5+j 0.5
2.25 - j 1.75 7.5 + j 1 .O
1.5 + j 5.5 3.5 - j 3.5 ,I
V,,=28 V, I,,=690 mA, P,,,=lOO.O Watts
Z,, is the series equivalent input impedance of the device from gate to gate.
Z LOAD is.tQe optimum series equivalent load impedance as measured from drain to drain.
RF Test Fixture
0 0 0
Cl.c6
c2.Q
c4
C5
c6.c7
c%ClO
Cl1
Cl2
Rl .R4
rum
Ll
K
Tl
72
T3
14
91
BOARD
JlJ2
J3J4JS
HEATSINK
PARTS LlS.1
CHlP CAPACITOR. 2.OpF ATC B
CHIP CAPACITOR. 5OOCPF
CHIP CAPAC~OF!. 37pF ATC B
CHIP CAPACITOR. 25OpF ATC B
CHIP CAPACTTOR. .015uF
CHIP CAPACTTOR. 5KvF ATC B
CHIP CAPAClTOR. O.BpF ATC B
ELECTROLtllC CAPACITCR, 5ouF 50 VOLTS
RESISTOR. 27 OHM 25 WA-i-f
RESISTOR 22K OHM 25 WATT
INDUCTOR. 5 TURNS OF NO. 18 AWG ON ‘.lO
INDUCTOR. 10 TURNS OF NC. 22 AWG ON R4
,:, BALUN TRANSFORMER 50 0”M SEMI-RIGID COAX
‘.OBS X 3’ LONG
,:I BALUN TRANSFORMER. 25 C+iM SEMI-RIGID COAX
‘.070’ X 2.5’ LONG
13 BALUN TRANSFORMER. 10 OHM SEMI-RIGIG COAX
‘.070.X 2.5’ LONG
,:, BALUN TRANSFORMER. 50 OHM SEMI-RIGID COAX
‘.OW X 4’ LONG
uF261oov
ROGERS 5870. .Ml’lliICK
CONNECTOR TYPE-N
BANANA JACK
FINNED ALUMINUM, DIN 7305OlB2-03
Specifications Subject to Change Without Notice.
WA-COM, Inc. 9-295
North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 n Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
