SCT10N120 - STMICROELECTRONICS - Datasheet.Directory

HiP247™

AM01475v1_noZen

D(2, TAB)

G(1)

S(3)

Features

• Very tight variation of on-resistance vs. temperature

• Very high operating junction temperature capability (TJ = 200 °C)

• Very fast and robust intrinsic body diode

• Low capacitance

Applications

• Solar inverters, UPS

• Motor drives

• High voltage DC-DC converters

• Switch mode power supplies

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative

properties of wide bandgap materials. This results in unsurpassed on-resistance per

unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties of the SiC material, combined with the device’s

housing in the proprietary HiP247™ package, allows designers to use an industry-

standard outline with significantly improved thermal capability. These features render

the device perfectly suitable for high-efficiency and high power density applications.

Product status link

SCT10N120

Product summary

Order code SCT10N120

Marking SCT10N120

Package HiP247™

Packing Tube

The device meets ECOPACK

standards, an environmentally-friendly

grade of products commonly referred

to as “halogen-free”.

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ

(typ., TJ = 150 °C) in an HiP247™ package

SCT10N120

Datasheet

DS10954 - Rev 3 - March 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

1Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 1200 V

VGS Gate-source voltage -10 to 25 V

IDDrain current (continuous) at TC = 25 °C 12 A

IDDrain current (continuous) at TC = 100 °C 10 A

IDM (1) Drain current (pulsed) 24 A

PTOT Total dissipation at TC = 25 °C 150 W

Tstg Storage temperature range

-55 to 200

°C

TjOperating junction temperature range °C

1. Pulse width limited by safe operating area.

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 1.17 °C/W

Rthj-amb Thermal resistance junction-ambient max 40 °C/W

SCT10N120

Electrical ratings

DS10954 - Rev 3 page 2/13

2Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source

breakdown voltage VGS = 0 V, ID = 1 mA 1200 V

IDSS

Zero gate voltage

drain current

VDS = 1200 V, VGS = 0 V 10 µA

VDS = 1200 V, VGS = 0 V, TJ = 200 °C

(1) 100 µA

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = -10 to 22 V 100 nA

VGS(th) Gate threshold

voltage VDS = VGS, ID = 250 µA 1.8 3.5 V

RDS(on)

Static drain-source

on-resistance

VGS = 20 V, ID = 6 A 500 690 mΩ

VGS = 20 V, ID = 6 A,

TJ = 150 °C 520 mΩ

VGS = 20 V, ID = 6 A,

TJ = 200 °C 580 mΩ

1. Defined by design, not subject to production test.

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 400 V, f = 1 MHz,

VGS = 0 V

- 290 - pF

Coss Output capacitance - 30 - pF

Crss Reverse transfer capacitance - 9 - pF

QgTotal gate charge

VDD = 800 V, ID = 6 A,

VGS = 0 to 20 V

- 22 - nC

Qgs Gate-source charge - 3 - nC

Qgd Gate-drain charge - 10 - nC

RgGate input resistance f = 1 MHz, ID = 0 A - 8 - Ω

Table 5. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Eon Turn-on switching energy VDD = 800 V, ID = 6 A

RG = 10 Ω, VGS = -5 to 20 V

- 90 - µJ

Eoff Turn-off switching energy - 30 - µJ

Eon Turn-on switching energy VDD = 800 V, ID = 6 A

RG = 10 Ω, VGS = -5 to 20 V

TJ = 150 °C

- 104 - µJ

Eoff Turn-off switching energy - 33 - µJ

SCT10N120

Electrical characteristics

DS10954 - Rev 3 page 3/13

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VDD = 800 V, ID = 6 A,

RG = 10 Ω, VGS = -5 to 20 V

- 7 - ns

tfFall time - 17 - ns

td(off) Turn-off delay time - 14 - ns

trRise time - 12 - ns

Table 7. Reverse SiC diode characteristics

Symbol Parameter Test conditions Min Typ. Max Unit

VSD Diode forward voltage IF = 6 A, VGS = 0 V - 4.3 - V

trr Reverse recovery time

ISD = 6 A, di/dt = 2000 A/µs

VDD = 800 V, TJ= 150 °C

- 16 - ns

Qrr Reverse recovery charge - 107 - nC

IRRM Reverse recovery current - 12 - A

SCT10N120

Electrical characteristics

DS10954 - Rev 3 page 4/13

2.1 Electrical characteristics curves

Figure 1. Safe operating area

GIPG230520161114SOA

10 1

10 0

10 -1

10 -1 10 010 110 210 3

I D

(A)

V DS (V)

t p =100 µs

t p =1 ms

t p =10 ms

T j ≤ 200 °C

T c = 25°C

single pulse

Operation in this area is

limited by R DS(on)

Figure 2. Thermal impedance

GIPG230520161115ZTH

0.8

0.6

0.4

0.2

10 -6 10 -5 10 -4 10 -3 10 -2 10 -1

t p (s)

Figure 3. Output characteristics (TJ= 25 °C)

GIPG230520161115OCH_25

00 2 4 6 8 10 12

I D

(A)

V DS (V)

V GS =6 V

V GS =10 V

V GS =12 V

V GS = 20 V

V GS =14 V

V GS =16 V

Figure 4. Output characteristics (TJ= 150 °C)

GIPG230520161116OCH_150

00 2 4 6 8 10 12

I D

(A)

V DS (V)

V GS =6 V

V GS =10 V

V GS =12 V

V GS =14 V

V GS =16, 20 V

Figure 5. Output characteristics (TJ= 200 °C)

GIPG230520161116OCH_200

00 2 4 6 8 10 12

I D

(A)

V DS (V)

V GS =6 V

V GS =10 V

V GS =12 V

V GS =14,16, 20 V

Figure 6. Transfer characteristics

GIPG230520161117TCH

00 4 8 12 16

I D

(A)

V GS (V)

V DS = 12 V

T J = 150 °C

T J = 25 °C

SCT10N120

Electrical characteristics curves

DS10954 - Rev 3 page 5/13

Figure 7. Power dissipation

GIPG230520161119PD

150

120

-25 25 75 125 175

P TOT

(W)

T C (°C)

Figure 8. Gate charge vs gate-source voltage

GIPG230520161121QVG

00 4 8 12 16 20

V GS

(V)

Q g (nC)

V DD = 800 V

I D = 6 A

Figure 9. Capacitance variations

GIPG230520161122CVR

10 2

10 1

10 0

10 -1 10 010 110 2

(pF)

V DS (V)

C ISS

C OSS

C RSS

f = 1 MHz

Figure 10. Switching energy vs. drain current

GIPG230520161127SWEC

320

240

160

00 4 8 12

(µJ)

I D (A)

E tot

E on

E off

V DD = 800 V

R G = 10 Ω

V GS = -5 to 20 V

Figure 11. Switching energy vs. junction temperature

GIPG230520161131SWET

120

00 50 100 150

(µJ)

T J (°C)

E tot

E on

E off

V DD = 800 V

R G = 10 Ω

V GS = -5 to 20 V

I D = 6 A

Figure 12. Normalized V(BR)DSS vs. temperature

GIPG230520161133BDV

1.04

1.02

1.00

0.98

0.96

0.94

-75 -25 25 75 125 175

V (BR)DSS

(norm.)

T j (°C)

I D = 1 mA

SCT10N120

Electrical characteristics curves

DS10954 - Rev 3 page 6/13

Figure 13. Normalized gate threshold voltage vs.

temperature

GIPG230520161149VTH

1.4

1.2

1.0

0.8

0.6

0.4

-75 -25 25 75 125 175

V GS(th)

(norm.)

T j (°C)

I D = 250 µA

Figure 14. Normalized on-resistance vs. temperature

GIPG230520161134RON

1.2

1.1

1.0

0.9

0.8

0.7

25 75 125 175

R DS(on)

(norm.)

T j (°C)

V GS = 20 V

Figure 15. Body diode characteristics (TJ= -50 °C)

GIPG230520161143BDC_-50

-2

-4

-6

-8

-10

-12

-8 -6 -4 -2

I D (A)

V GS = -5 V

V GS = -2 V

V GS = 0 V

V DS (V)

Figure 16. Body diode characteristics (TJ= 25 °C)

GIPG230520161146BCD_25

-2

-4

-6

-8

-10

-12

-8 -6 -4 -2

V GS = -5 V

I D (A)

V GS = -2 V

V GS = 0 V

V DS (V)

Figure 17. Body diode characteristics (TJ= 150 °C)

GIPG230520161151BDC_150

-2

-4

-6

-8

-10

-12

-8 -6 -4 -2

V GS = -5 V

I D (A)

V GS = -2 V

V GS = 0 V

V DS (V)

Figure 18. 3rd quadrant characteristics (TJ= -50 °C)

GIPG230520161155QC_-50

-2

-4

-6

-8

-10

-12

-4 -3 -2 -1

VGS = 15 V

V DS (V)

I D(A)

VGS =10 V

V GS =0 V

VGS =5 V

SCT10N120

Electrical characteristics curves

DS10954 - Rev 3 page 7/13

Figure 19. 3rd quadrant characteristics (TJ= 25 °C)

GIPG230520161223QC_25

-2

-4

-6

-8

-10

-12

-4 -3 -2 -1

VGS = 15 V

VDS (V)

ID(A)

VGS =10 V

VGS =0 V

VGS =5 V

Figure 20. 3rd quadrant characteristics (TJ= 150 °C)

GIPG230520161225QC_150

-2

-4

-6

-8

-10

-12

-4 -3 -2 -1

VGS = 15 V

V DS (V)

I D

(A)

VGS =10 V

V GS =0 V

VGS =5 V

SCT10N120

Electrical characteristics curves

DS10954 - Rev 3 page 8/13

3Test circuits

Figure 21. Switching test waveforms for transition times

GIPD101020141511FSR

Figure 22. Clamped inductive switching waveform

VDS

VDS On

td (Off) tr

tOff

90%

tOn

td (On) tf

VGS

VGS Off

GS On

VDS Off

10%

90%

10%

GIPD101020141502FSR

SCT10N120

Test circuits

DS10954 - Rev 3 page 9/13

4Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions

and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 HiP247 package information

Figure 23. HiP247™ package outline

8396756_2

Table 8. HiP247™ package mechanical data

Dim.

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

SCT10N120

Package information

DS10954 - Rev 3 page 10/13

Dim.

Min. Typ. Max.

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

ØP 3.55 3.65

ØR 4.50 5.50

S 5.30 5.50 5.70

SCT10N120

HiP247 package information

DS10954 - Rev 3 page 11/13

Revision history

Table 9. Document revision history

Date Revision Changes

23-Feb-2016 1 First release

23-May-2016 2

Modified: title, features and Figure 1: "Internal schematic diagram"

in cover page

Modified: Table 2: "Absolute maximum ratings" and Table 3:

"Thermal data"

Modified: Table 4: "On/off states", Table 5: "Dynamic", Table 6:

"Switching energy (inductive load)", Table 7: "Switching times" and

Table 8: "Reverse SiC diode characteristics"

Added: Section 4.1: "Electrical characteristics (curves)"

Minor text changes

21-Mar-2018 3

Removed maturity status indication from cover page. The document status is production data.

Updated Section 2.1 Electrical characteristics curves.

Minor text changes.

SCT10N120

DS10954 - Rev 3 page 12/13

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

SCT10N120

DS10954 - Rev 3 page 13/13