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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
1
HMC1082LP4E
v01.0314
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.5 - 18 GHz
Functional Diagram
Features
High Saturated Output Power: 26 dBm @ 26% PAE
High Output IP3: 35 dBm
High Gain: 22 dB
High P1dB Output Power: 24 dBm
DC Supply: +5V @ 220 mA
Compact 24 Lead 4x4 mm SMT Package: 16 mm2
Typical Applications
General Description
The HMC1082LP4E is a GaAs pHEMT MMIC driver
amplier with an integrated temperature compensated
on-chip power detector which operates between 5.5
and 18 GHz. The amplier provides 22 dB of gain, +35
dBm Output IP3, and +24 dBm of output power at 1 dB
gain compression, while requiring 220 mA from a +5V
supply. The HMC1082LP4E is capable of supplying
+26 dBm of saturated output power with 26 % PAE
and is housed in a compact leadless 4x4 mm plastic
surface mount package.
The HMC1082LP4E is an ideal driver amplier for a
wide range of applications including point-to-point
radio from 5.5 to 18 GHz and marine radar at 9 GHz.
The HMC1082LP4E may also be used for 6 to 18 GHz
EW and ECM applications.
Parameter Min Typ.Max Min Typ. Max Min Ty p Max Units
Frequency Range 5.5 - 6.5 6.5 - 17 17 - 18 GHz
Gain 21.5 23.5 20.5 22.5 20 22 dB
Gain Variation over temperature 0.0121 0.0101 0.015 dB/°C
Input Return Loss 22 12 7.5 dBm
Output Return Loss 10 14 17. 5 dBm
Output Power for 1 dB Compression (P1dB) 21 24 21 24 20.5 23.5 dBm
Saturated Output Power (Psat) 25.5 26 24.5 dBm
Output Third Order Intercept (IP3) [2] 36 35 33.5 dBm
Supply Current (Idd) 220 220 220 mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 220mA typical
[2] Measurement taken at Pout / tone = +12dBm
The HMC1082LP4E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Marine Radar
• Military EW & ECM
Electrical Specications
TA = +25° C, Vdd1 = Vdd2 = Vdd3 = +5V, Idd = +220 mA [1]
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
2
HMC1082LP4E
v01.0314
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.5 - 18 GHz
Broadband Gain & Return Loss Gain vs. Temperature
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
P1dB vs. Temperature P1dB vs. Supply Voltage
-40
-30
-20
-10
0
10
20
30
4 6 8 10 12 14 16 18 20
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
12
14
16
18
20
22
24
26
28
30
5.5 8 10.5 13 15.5 18
+25 C +85 C -40 C
GAIN (dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
5.5 8 10.5 13 15.5 18
+25 C +85 C -40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
5.5 8 10.5 13 15.5 18
+25 C +85 C -40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
12
14
16
18
20
22
24
26
28
30
5.5 8 10.5 13 15.5 18
+25 C +85 C -40 C
FREQUENCY (GHz)
P1dB (dBm)
12
14
16
18
20
22
24
26
28
30
5.5 8 10.5 13 15.5 18
4V 4.5V 5V
FREQUENCY (GHz)
P1dB (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
3
HMC1082LP4E
v01.0314
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.5 - 18 GHz
Psat vs. Temperature Psat vs. Supply Voltage
P1dB vs. Supply Current Psat vs. Supply Current
Output IP3 vs. Temperature [1] Output IP3 vs. Supply Current [1]
12
14
16
18
20
22
24
26
28
30
5.5 8 10.5 13 15.5 18
+25 C +85 C -40 C
FREQUENCY (GHz)
Psat (dBm)
12
14
16
18
20
22
24
26
28
30
5.5 8 10.5 13 15.5 18
4V 4.5V 5V
FREQUENCY (GHz)
Psat (dBm)
12
14
16
18
20
22
24
26
28
30
5.5 8 10.5 13 15.5 18
180 mA 220 mA 250 mA
FREQUENCY (GHz)
P1dB (dBm)
12
14
16
18
20
22
24
26
28
30
5.5 8 10.5 13 15.5 18
180 mA 220 mA 250 mA
FREQUENCY (GHz)
Psat (dBm)
20
22
24
26
28
30
32
34
36
38
40
5.5 8 10.5 13 15.5 18
+25 C +85 C -40 C
FREQUENCY (GHz)
IP3 (dBm)
20
22
24
26
28
30
32
34
36
38
40
5.5 8 10.5 13 15.5 18
180 mA 220 mA 250 mA
FREQUENCY (GHz)
IP3 (dBm)
[1] Pout/Tone = +12 dBm
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
4
HMC1082LP4E
v01.0314
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.5 - 18 GHz
Output IP3 vs. Supply Voltage [1] Output IM3 @ Vdd = +4V
Output IM3 @ Vdd = +4.5V Output IM3 @ Vdd = +5V
Power Compression @ 12 GHz Gain & Power vs. Supply Current
20
22
24
26
28
30
32
34
36
38
40
5.5 8 10.5 13 15.5 18
4V 4.5V 5V
FREQUENCY (GHz)
IP3 (dBm)
20
30
40
50
60
70
4 6 8 10 12 14 16
7 GHz
9 GHz
12 GHz
15 GHz
17 GHz
Pout/TONE (dBm)
IM3 (dBc)
20
30
40
50
60
70
4 6 8 10 12 14 16
7 GHz
9 GHz
12 GHz
15 GHz
17 GHz
Pout/TONE (dBm)
IM3 (dBc)
20
30
40
50
60
70
4 6 8 10 12 14 16
7 GHz
9 GHz
12 GHz
15 GHz
17 GHz
Pout/TONE (dBm)
IM3 (dBc)
20
21
22
23
24
25
26
27
28
180 190 200 210 220 230 240 250
GAIN P1dB Psat
Idd (mA)
Gain (dB), P1dB (dBm), Psat (dBm)
[1] Pout/Tone = +12 dBm
0
5
10
15
20
25
30
200
250
300
350
400
450
500
-8 -6 -4 -2 0 2 4 6 8 10
Idd
Pout Gain PAE
Pout(dBm), GAIN(dB), PAE(%)
Idd (mA)
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
5
HMC1082LP4E
v01.0314
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.5 - 18 GHz
Gain & Power vs. Supply Voltage Reverse Isolation vs. Temperature
Power Dissipation
20
21
22
23
24
25
26
27
28
4 4.2 4.4 4.6 4.8 5
GAIN P1dB Psat
Vdd (V)
Gain (dB), P1dB (dBm), Psat (dBm)
-80
-70
-60
-50
-40
-30
-20
5.5 8 10.5 13 15.5 18
+25 C +85 C -40 C
FREQUENCY (GHz)
ISOLATION (dB)
0.4
0.6
0.8
1
1.2
1.4
-8 -6 -4 -2 0 2 4 6 8 10
7 GHz
10 GHz
12 GHz
14 GHz
17 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
Detector Voltage vs. Temperature
@ 6 GHz
0.0001
0.001
0.01
0.1
1
10
-20 -10 0 10 20 30
+25 C +85 C - 40 C
OUTPUT POWER (dBm)
Vref-Vdet (V)
0.0001
0.001
0.01
0.1
1
10
-20 -10 0 10 20 30
+25 C +85 C - 40 C
OUTPUT POWER (dBm)
Vref-Vdet (V)
0.0001
0.001
0.01
0.1
1
10
-20 -10 0 10 20 30
+25 C +85 C - 40 C
OUTPUT POWER (dBm)
Vref-Vdet (V)
Detector Voltage vs. Temperature
@ 12 GHz Detector Voltage vs. Temperature
@ 18 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
6
HMC1082LP4E
v01.0314
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.5 - 18 GHz
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST
BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED PCB LAND PATTERN.
Drain Bias Voltage (Vdd) 5.5V
RF Input Power (RFIN) 20 dBm
Channel Temperature 175 °C
Continuous Pdiss (T=85 °C)
(derate 20mW/°C 1.81W
Thermal Resistance (RTH)
(junction to ground paddle) 49.8 °C/W
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to 150°C
ESD Sensitivity (HBM) Class 0, Passed 100V
Part Number Package Body Material Lead Finish MSL Rating [2] Package Marking [1]
HMC1082LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 H1082
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reow temperature of 260 °C
Absolute Maximum Ratings Typical Supply Current vs. Vdd
Vdd (V) Idd (mA)
+4 220
+4.5 220
+5 220
Adjust Vgg1 to achieve Idd = 220mA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Package Information
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
7
HMC1082LP4E
v01.0314
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.5 - 18 GHz
Pin Number Function Description Pin Schematic
1, 2, 5, 6, 7, 8, 10, 13,
14, 17, 18, 19, 21, 23 N/C
These pins are not connected internally, however all
data shown herein was measured with these pins
connected to RF/DC ground externally.
3 RF IN This pin is DC coupled and matched to 50 Ohms.
4, 15 GND These pins and package bottom must be connected to
RF/DC ground.
9Vgg Gate control for amplier. External bypass capacitors
of 1000pF, 100pF and 2.2uF are required.
11 Vref
DC bias of diode biased through external resistor used
for temperature compensation of Vdet. See application
circuit.
12 Vdet
DC voltage representing RF output power rectied by
diode which is biased through an external resistor. See
application circuit.
16 RF OUT This pin is DC coupled and matched to 50 Ohms.
24, 22, 20 Vdd1, Vdd2, Vdd3 Drain bias voltage for amplier. External bypass capac-
itors of 1000pF, 100pF and 2.2uF are required.
Pin Descriptions
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
8
HMC1082LP4E
v01.0314
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.5 - 18 GHz
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
HMC1082LP4E
v01.0314
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.5 - 18 GHz
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from Hit-
tite upon request.
Evaluation PCB
Item Description
J1, J2 PCB Mount SMA RF Connector
J5 - J12 DC Pin
C1 - C4 100pF Capacitor, 0402 Pkg.
C5 - C8 1000pF Capacitor, 0402 Pkg
C9 - C12 2.2uF Capacitor, 0402 Pkg.
R1, R2 40.2k Ohm Resistor, 0402 Pkg.
U1 HMC1082LP4E
PCB [2] 600-00819-00 Evaluation Board
[1] Reference this number when ordering Complete Evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
List of Materials for Evaluation PCB EV1HMC1082LP4 [1]
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
10
HMC1082LP4E
v01.0314
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.5 - 18 GHz
Notes:
