APT1201R2BFLL(G) APT1201R2SFLL(G) 1200V 12A 1.25 POWER MOS 7 R BFLL FREDFET D3PAK (R) Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg VDSS ID SFLL D * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25C unless otherwise specified. Parameter APT1201R2BFLL_SFLL UNIT 1200 Volts Drain-Source Voltage 12 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 403 Watts Linear Derating Factor 3.23 W/C PD TJ,TSTG 48 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 C 300 Amps 12 (Repetitive and Non-Repetitive) 1 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 1200 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 6A) TYP MAX UNIT Volts 1.25 Ohms Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com A 2-2009 Characteristic / Test Conditions 050-7393 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT1201R2BFLL_ SFLL Test Conditions Characteristic C iss Input Capacitance Coss Output Capacitance VDS = 25V C rss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge 3 Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time ID = 12A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 600V Turn-off Delay Time tf ID = 12A @ 25C Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 465 VDD = 800V, VGS = 15V 100 ID = 12A, RG = 5 INDUCTIVE SWITCHING @ 125C 6 nC 21 RG = 1.6 INDUCTIVE SWITCHING @ 25C 6 UNIT pF 70 100 14 65 8 18 29 VDD = 600V Rise Time MAX 2540 365 VGS = 10V Gate-Source Charge td(off) TYP VGS = 0V Qgs tr MIN J 935 VDD = 800V, VGS = 15V ID = 12A, RG = 5 135 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS TYP MAX 12 Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ MIN Characteristic / Test Conditions Peak Diode Recovery dt dv/ UNIT Amps (Body Diode) 48 (VGS = 0V, IS = -12A) 1.3 Volts 18 V/ns dt 5 t rr Reverse Recovery Time (IS = -12A, di/dt = 100A/s) Tj = 25C 210 Tj = 125C 710 Q rr Reverse Recovery Charge (IS = -12A, di/dt = 100A/s) Tj = 25C 1.0 Tj = 125C 3.6 IRRM Peak Recovery Current (IS = -12A, di/dt = 100A/s) Tj = 25C 10 Tj = 125C 14 ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.31 RJC Junction to Case RJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.25 0.7 0.20 0.5 Note: 0.10 0.3 0.05 0.1 0.05 PDM Z JC, THERMAL IMPEDANCE (C/W) 2-2009 050-7393 Rev C 0.9 0.15 t1 t2 0 10-5 SINGLE PULSE 10-4 C/W 4 Starting Tj = +25C, L = 18.06mH, RG = 25, Peak IL = 12A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ID-12A di/dt 700A/s VR 1200 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.30 UNIT Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 0.0258 Power (watts) 0.107 0.177 0.00295F 0.0114F 0.174F ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. (C) 20 TJ = -55C 15 TJ = +25C TJ = +125C 5 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 10 8 6 4 2 25 10 5.5V 05 1.40 V NORMALIZED TO = 10V @ I = 6A GS D 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT V D GS 1.05 1.00 0.95 0.90 0.85 -50 1.2 = 6A = 10V 2.0 1.5 1.0 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 1.1 1.0 0.9 0.8 2-2009 I 1.10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 0.0 6V 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 12 0 15 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7393 Rev C 0 6.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 10 7V 5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 25 VGS =15,10 & 8V 20 0 Case temperature. (C) 30 APT1201R2BFLL_SFLL 25 48 5,000 5 100S 1mS 1 10mS TC =+25C TJ =+150C SINGLE PULSE .1 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 I D = 12A 12 VDS=100V VDS=250V 8 VDS=400V 4 0 0 20 40 60 80 100 120 140 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE C, CAPACITANCE (pF) Ciss 10 td(off) 200 100 TJ =+150C TJ =+25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 40 R G tf = 800V tr and tf (ns) 50 DD = 5 T = 125C J 40 L = 100H 30 20 V 30 DD R G = 800V = 5 T = 125C J L = 100H 20 tr 10 td(on) 5 1600 10 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD R 1400 G 5 10 1400 Eon 1200 Eon L = 100H E ON includes diode reverse recovery. 800 600 400 Eoff 200 5 15 20 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT = 800V J 1000 0 20 = 5 T = 125C 1200 15 SWITCHING ENERGY (J) td(on) and td(off) (ns) V 10 SWITCHING ENERGY (J) Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 60 2-2009 100 50 70 0 Coss 10 80 0 1,000 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 050-7393 Rev C APT1201R2BFLL_SFLL 10,000 10 1000 800 600 V 400 Eoff 20 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT DD D = 800V = 12A T = 125C J 200 15 I 0 L = 100H E ON includes diode reverse recovery. 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT1201R2BFLL_SFLL Gate Voltage 10% 90% Gate Voltage TJ = 125C td(off) td(on) TJ = 125C DrainVoltage tr Drain Current 90% tf 90% 5% 5% 10% 10% Drain Current DrainVoltage Switching Energy Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions 0 Figure 19, Turn-off Switching Waveforms and Definitions APT15DF120B V CE IC V DD G D.U.T. Figure 20, Inductive Switching Test Circuit 3 TO-247 Package Outline (BFLL) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) D PAK Package Outline (SFLL) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 Drain 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) Gate Drain 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated 050-7393 Rev C 0.46 (.018) 0.56 (.022) {3 Plcs} 2.87 (.113) 3.12 (.123) 2-2009 3.50 (.138) 3.81 (.150)