050-7393 Rev C 2-2009
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
TO-247
D3PAK
APT1201R2BFLL(G)
APT1201R2SFLL(G)
1200V 12A 1.25 ΩΩ
ΩΩ
Ω
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg • TO-247 or Surface Mount D3PAK Package
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 6A)
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
UNIT
Volts
Ohms
µA
nA
Volts
MIN TYP MAX
1200
1.25
250
1000
±100
35
APT1201R2BFLL_SFLL
1200
12
48
±30
±40
403
3.23
-55 to 150
300
12
30
1300
POWER MOS 7 R FREDFET BFLL
SFLL
DYNAMIC CHARACTERISTICS APT1201R2BFLL_ SFLL
050-7393 Rev C 2-2009
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -12A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -12A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -12A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -12A, di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
MIN TYP MAX
12
48
1.3
18
Tj = 25°C 210
Tj = 125°C 710
Tj = 25°C 1.0
Tj = 125°C 3.6
Tj = 25°C 10
Tj = 125°C 14
Symbol
RθJC
RθJA
MIN TYP MAX
0.31
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 18.06mH, RG = 25Ω, Peak IL = 12A
5dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ ID-12A di/dt ≤ 700A/µs VR ≤ 1200 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
SINGLE PULSE
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
MIN TYP MAX
2540
365
70
100
14
65
8
18
29
21
465
100
935
135
UNIT
pF
nC
ns
µJ
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 600V
ID = 12A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 600V
ID = 12A @ 25°C
RG = 1.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 800V, VGS = 15V
ID = 12A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 800V, VGS = 15V
ID = 12A, RG = 5Ω
050-7393 Rev C 2-2009
APT1201R2BFLL_SFLL
Typical Performance Curves
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE BVDSS, DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)
(NORMALIZED) VOLTAGE (NORMALIZED)
0 5 10 15 20 25 30
0 1 2 3 4 5 6 7 8 0 2 4 6 8 101214161820
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
30
25
20
15
10
5
0
12
10
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0.0
25
20
15
10
05
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
5.5V
6V
6.5V
7V
5V
VGS =15,10 & 8V
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.0258
0.107
0.177
0.00295F
0.0114F
0.174F
Power
(watts)
Junction
temp. (°C)
RC MODEL
Case temperature. (°C)
NORMALIZED TO
VGS = 10V @ ID = 6A
ID = 6A
VGS = 10V
APT1201R2BFLL_SFLL
050-7393 Rev C 2-2009
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
10,000
5,000
1,000
100
10
200
100
10
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 10 100 1200 0 10 20 30 40 50
0 20 40 60 80 100 120 140 0.3 0.5 0.7 0.9 1.1 1.3 1.5
48
10
5
1
.1
16
12
8
4
0
Crss
Ciss
Coss
TJ
=+150°C
TJ
=+25°C
VDS=250V
VDS=100V
VDS=400V
ID = 12A
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
10mS
1mS
100µS
ID (A) ID (A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A) RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
VDD = 800V
RG = 5Ω
TJ = 125°C
L = 100µH
Eon
Eoff
tr
tf
SWITCHING ENERGY (µJ) td(on) and td(off) (ns)
SWITCHING ENERGY (µJ) tr and tf (ns)
5 10 15 20 5 10 15 20
5 10 15 20 0 5 101520253035404550
VDD = 800V
ID = 12A
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
80
70
60
50
40
30
20
10
0
1600
1400
1200
1000
800
600
400
200
0
VDD = 800V
RG = 5Ω
TJ = 125°C
L = 100µH
VDD = 800V
RG = 5Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
50
40
30
20
10
0
1400
1200
1000
800
600
400
200
0
050-7393 Rev C 2-2009
APT1201R2BFLL_SFLL
Typical Performance Curves
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline (BFLL)
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain
(Heat Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D3PAK Package Outline (SFLL)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions
TJ = 125°C
DrainVoltage
Drain Current
Gate Voltage
90%
90%
10%
tf
0
td(off)
Switching Energy
10%
90%
10%
tr
5%
td(on)
Switching Energy
5%
Drain Current
DrainVoltage
Gate Voltage
TJ = 125°C
I
C
D.U.T.
APT15DF120B
V
CE
Figure 20, Inductive Switching Test Circuit
G
V
DD
