1177 BLUE HERON BLVD. @ RIVIERA BEACH, FLORIDA 33404 TEL: (407) 848-4311 @TLX: 51-3435 @FAX: (407) 663-5946 PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS SOOV, 21A, 0.270 SDF460 JEA SDF460 JEB SDF460 JEC SDF 460 JED PARAMETER SYMBOL UNITS Drain-source Voit.(1) VOSS 500 Vdc Drain-Gate Voltage (Res =#1.0Ma) (1) VDGR soo Vde Gate-Source Voltage Continuous VGS +20 Vdc (e's Beecy Continuous ID 24 Ade Drain Current Pulsed(3) 10M 84 A Total Power Dissipation PD 250 W Power Dissipation Derating > 25C 2.0 W/C Operating & Storage Temp. | TU/Tsis -55 TO +150 c Thermal Resistance Rthdc 0.5 C/W Max.Lead temperature TL 300 C ELECTRICAL CHARACTERISTICS Tc =2sc WISE SPECIFIED ( UNLESS OTHER- FEATURES @ RUGGED PACKAGE @ HI-REL CONSTRUCTION @ CERAMIC EYELETS @ LEAD BENDING OPTIONS @ COPPER CORED S2 ALLOY PINS @ LOW IR LOSSES @ LOW THERMAL RESISTANCE @ OPTIONAL MIL-S-19500 SCREENING PARAMETER SYMBOL} TEST CONDITIONS MINJTYP | MAX JUNITS| Drain-source VGS=OV Breakdown Vo tt |Y(BRI08S tO=250 pA S00} - ~ Vv Gate Thresholdycs(tu)/voseves 1D=250na [2.0] - [4.0] v Gate Source = Leakage IGSS |VGS*+20 V _ - |100] nA Zero Gate VDS*MAX.RATING VGS*0] - - |250] WA Voltage Drain | IDSS = Current WOS=9-8 MAX RATING | _ | f1oo0} pA Static Drain- VGS=10 V Seurce On-State|RDS(ON - -~ 1.271 Q Resistance(1) (ON) 1D=12A Forward Trans- vOS 2 50 V Conductance (2) gfs | ips=i20 13] - - 1s(v) Input Capacitance! CISS |4100/ - pF [patent Capacitance] COSS yee OV Vv -~ |480/ - pF everse Transf cae Capacitance sett CRSS | 84] - pF Turn-On Delay |td(on)|vope250vV - RG=4.3n - | - [35] as Rise Time tr (hoseey gorl2a _ 11201 ns Turn-Off Detay|td(off)! are essentially indepen- - - {130} ns Fall Time tf dent of operating temp.) [_ [9g [ons Total Gate Charge Gate-Source Plus| Qg - - |190} nc ate-Drain VGS"1OV iD=2LA Gate-Source =Q.8 MAX .RATING Charge Qgs (Gate charge is essent i- 7 ~ 27 | 1c - i a in n a akon) Qgd operating temperature). _ _ 93 | nc Charge SCHEMATIC (0) [TERMINAL CONNECTIONS G H <?{ 11 GATE 1 | ORAIN [? 2|DRAIN | 2] SOURCE (S) [3{source |3]/ GATE STANDARD BEND CONFIGURATIONS JEA JEC S 23 3 D D 1 U" 23 (CUSTOM BEND OPTIONS AVAILABLE) SOURCE-DRAIN DIODE RATINGS & CHARACT .Tc = 25C ( UNLESS OTHER- ) WISE SPECIFIED PARAMETER SYMBOL TEST CONDITIONS MIN.| TYP..|MAX.|UNITS Continuous ape Source Current! IS sooo | chew ns the -~ | - | ar] A (Body Diode) integral reverse Pulse Source P-N junction recti- Current (Body ISM |fier (See schematic)| - | - | 84] A Diode) (1) Diode Forward IF=21A VGS=0V _ - Voltage (2) | VSO |te#+25c 1.8] V Reverse 21058 Recovery Time trr i ae c ~ | ~ [1200] ns Reverse Re- re covery Charge Qrr di/dt=100A/ HS - 18.1 - pC STANDARD BEND CONF IGURAT IONS JEB JED (CUSTOM BEND OPTIONS AVAILABLE) 3 A27 TJ = 25C to 150C. Pulse test: Pulse Width <300uS, Duty Cycle < 2%. Repetitive Rating: Pulse Width limited By Max.junction Temperature.