Vishay Semiconductors
TLLG/R/Y440.
Document Number 83029
Rev. 1.5, 13-Sep-07
www.vishay.com
1
Low Current LED in ∅ 3 mm Tinted Diffused Package
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: 3 mm
• Product series: low current
• Angle of half intensity: ± 25°
FEATURES
• Low power consumption
• High brightness
• CMOS/MOS compatible
• Specified at IF = 2 mA
• Luminous intensity categorized
• Yellow and green color categorized
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
APPLICATIONS
• Low power DC circuits
Note:
1) Tamb = 25 °C, unless otherwise specified
19220
e3
PARTS TABLE
PART COLOR, LUMINOUS INTENSITY TECHNOLOGY
TLLR4400 Red, IV > 0.63 mcd GaAsP on GaP
TLLR4401 Red, IV > 1 mcd GaAsP on GaP
TLLY4400 Yel l o w, I V > 0.63 mcd GaAsP on GaP
TLLY4401 Yel l o w, I V > 1 mcd GaAsP on GaP
TLLG4400 Green, IV > 0.63 mcd GaP on GaP
TLLG4401 Green, IV > 1 mcd GaP on GaP
ABSOLUTE MAXIMUM RATINGS1) TLL.440.
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR6V
DC Forward current IF7mA
Surge forward current tp ≤ 10 μsI
FSM 0.15 A
Power dissipation Tamb ≤ 84 °C PV20 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260 °C
Thermal resistance junction/
ambient RthJA 800 K/W
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Document Number 83029
Rev. 1.5, 13-Sep-07
Vishay Semiconductors
TLLG/R/Y440.
Note:
1) Tamb = 25 °C, unless otherwise specified
2) in one packing unit IVmin/IVmax ≤ 0.5
Note:
1) Tamb = 25 °C, unless otherwise specified
2) in one packing unit IVmin/IVmax ≤ 0.5
Note:
1) Tamb = 25 °C, unless otherwise specified
2) in one packing unit IVmin/IVmax ≤ 0.5
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLLR440., RED
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity 2) IF = 2 mA TLLR4400 IV0.63 1.2 mcd
TLLR4401 IV12 mcd
Dominant wavelength IF = 2 mA λd612 625 nm
Peak wavelength IF = 2 mA λp635 nm
Angle of half intensity IF = 2 mA ϕ± 25 deg
Forward voltage IF = 2 mA VF1.9 2.4 V
Reverse voltage IR = 10 μAV
R620 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLLY440., YELLOW
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity 2) IF = 2 mA TLLY4400 IV0.63 1.2 mcd
TLLY4401 IV12 mcd
Dominant wavelength IF = 2 mA λd581 594 nm
Peak wavelength IF = 2 mA λp585 nm
Angle of half intensity IF = 2 mA ϕ± 25 deg
Forward voltage IF = 2 mA VF2.4 2.9 V
Reverse voltage IR = 10 μAV
R620 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLLG440., GREEN
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity 2) IF = 2 mA TLLG4400 IV0.63 1.2 mcd
TLLG4401 IV12 mcd
Dominant wavelength IF = 2 mA λd562 575 nm
Peak wavelength IF = 2 mA λp565 nm
Angle of half intensity IF = 2 mA ϕ± 25 deg
Forward voltage IF = 2 mA VF1.9 2.4 V
Reverse voltage IR = 10 μAV
R620 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Document Number 83029
Rev. 1.5, 13-Sep-07
www.vishay.com
3
Vishay Semiconductors
TLLG/R/Y440.
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
0
5
10
15
20
25
Tamb - Ambient Temperature (°C)
95 10048
PV - Power Dissipation (mW)
0 20406080 100
0
2
4
6
8
10
IF - Forward Current (mA)
Tamb - Ambient Temperature (°C)
95 10049
0 20406080 100
0.4 0.2 0 0.2 0.4 0.6
95 10060
0.6
0.9
0.8
0
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
I
V rel
- Relative Luminous Intensity
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
0.1
1
10
100
VF - Forward Voltage (V)
95 10050
IF - Forward Current (mA)
red
tP/T = 0.001
tP = 10 µs
54320 1
0
95 10051
20 40 60 80 100
IV rel - Relative Luminous Intensity
IF = 2 mA
0
0.4
0.8
1.2
1.6
2.0
Tamb - Ambient Temperature (°C)
red
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
96 11490
500
0.5 0.2 0.1 0.05 0.021
I
F
(mA)
t
p
/T
I
V rel
- Relative Luminous Intensity
2.0
red
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Document Number 83029
Rev. 1.5, 13-Sep-07
Vishay Semiconductors
TLLG/R/Y440.
Figure 7. Relative Luminous Intensity vs. Forward Current
Figure 8. Relative Intensity vs. Wavelength
Figure 9. Forward Current vs. Forward Voltage
0.01
0.1
1
10
100
95 10061 IF - Forward Current (mA)
IV rel - Relative Luminous Intensity
10010 1 0.1
red
590 610 630 650 670
0
0.2
0.4
0.6
0.8
1.2
690
95 10040 λ - Wavelength (nm)
1.0
red
I - Relative Luminous Intensity
Vr el
01
0.1
1
10
100
VF - Forward Voltage (V)
5
95 10053
IF - Forward Current (mA)
yellow
tP/T = 0.001
tP = 10 µs
234
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
Figure 11. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 12. Relative Luminous Intensity vs. Forward Current
0
0.4
0.8
1.2
1.6
2.0
IV rel - Relative Luminous Intensity
yellow
Tamb - Ambient Temperature (°C)
95 10054
020406080 100
yellow
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
96 11590
500
0.5 0.2 0.1 0.05 0.021
I
F
(mA)
t
p
/T
I
V rel
- Relative Luminous Intensity
2.0
yellow
0.01
0.1
1
10
100
95 10062 IF - Forward Current (mA)
IV rel - Relative Luminous Intensity
1001010.1
Document Number 83029
Rev. 1.5, 13-Sep-07
www.vishay.com
5
Vishay Semiconductors
TLLG/R/Y440.
Figure 13. Relative Intensity vs. Wavelength
Figure 14. Forward Current vs. Forward Voltage
Figure 15. Rel. Luminous Intensity vs. Ambient Temperature
550 570 590 610 630
0
0.2
0.4
0.6
0.8
1
.
2
650
95 10039
λ - Wavelength (nm)
1.0
yellow
I
V rel
- Relative Luminous Intensity
02
0.1
1
10
100
VF- Forward Voltage (V)
4
95 10056
I- Forward Current (mA)
F
Green
tp/T= 0.001
tp= 10 µs
135
0
0
0.4
0.8
1.2
1.6
95 10057
20 40 60 80100
I - Relative Luminous Intensity
vrel
Tamb- Ambient Temperature (°C)
Green
IF= 2 mA
Figure 16. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 17. Relative Luminous Intensity vs. Forward Current
Figure 18. Relative Intensity vs. Wavelength
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
96 11591
500
0.5 0.2 0.1 0.05 0.021
IF (mA)
tp/T
IV rel - Relative Luminous Intensity
2.0
green
0.1 1 10
0.01
0.1
1
10
100
100
95 10059
I - Relative Luminous Intensity
vrel
I
F
- Forward Current (mA)
Green
520 540 560 580 600
0
0.2
0.4
0.6
0.8
1.2
620
95 10038λ - Wavelength (nm)
1.0
green
I - Relative Luminous Intensity
Vrel
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Document Number 83029
Rev. 1.5, 13-Sep-07
Vishay Semiconductors
TLLG/R/Y440.
PACKAGE DIMENSIONS in millimeters
95 10913
Document Number 83029
Rev. 1.5, 13-Sep-07
www.vishay.com
7
Vishay Semiconductors
TLLG/R/Y440.
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs,
damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death
associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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