2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–53 March 27, 2000-00
DESCRIPTION
This data sheet presents five families of Infineon Industry Standard
Single Channel Phototransistor Couplers. These families include the
4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/
A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/
277 devices.Each optocoupler consists of Gallium Arsenide infra-
red LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL) listed to comply
with a 5300 V
RMS
Isolation Test Voltage. This isolation performance
is accomplished through Infineon double molding isolation manu-
facturing process. Compliance to VDE 0884 partial discharge isola-
tion specification is available for these families by ordering option 1.
Phototransistor gain stability, in the presence of high isolation volt-
ages, is insured by incorporating a TRansparent lOn Shield
(TRIOS)
®
on the phototransistor substrate. These isolation pro-
cesses and the Infineon IS09001 Quality program results in the
highest isolation performance available for a commercial plastic
phototransistor optocoupler.
The devices are available in lead formed configuration suitable for
surface mounting and are available either on tape and reel, or in
standard tube shipping containers.
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
12
3
18°
3°9°
.300.347
(7.628.81)
4°
typ.
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
Dimensions in Inches (mm)
DEVICE TYPES
Part No. CTR % Min. Part No. CTR % Min.
4N25 20 MCT2 20
4N26 20 MCT2E 20
4N27 10 MCT270 50
4N28 10 MCT271 4590
4N35 100 MCT272 75150
4N36 100 MCT273 125250
4N37 100 MCT274 225400
4N38 10 MCT275 7090
H11A1 50 MCT276 1560
H11A2 20 MCT277 100
H11A3 20
H11A4 10
H11A5 30
FEATURES
Interfaces with Common Logic Families
Input-output Coupling Capacitance < 0.5 pF
Industry Standard Dual-in-line 6-pin Package
Field Effect Stable by TRIOS
®
5300 V
RMS
Isolation Test Voltage
Underwriters Laboratory File #E52744
VDE #0884 Approval Available with Option 1
APPLICATIONS
AC Mains Detection
Reed Relay Driving
Switch Mode Power Supply Feedback
Telephone Ring Detection
Logic Ground Isolation
Logic Coupling with High Frequency Noise
Rejection
Notes:
Designing with data sheet is covered in Application Note 45.
V
DE
PHOTOTRANSISTOR
Industry Standard
Single Channel
6 Pin DIP Optocoupler
2001 Inneon Technologies Corp. Optoelectronics Division San Jose, CA Phototransistor, Industry Standard
www.inneon.com/opto 1-888-Inneon (1-888-463-4636)
254 March 27, 2000-00
Maximum Ratings
T
A
=25
°
C
Emitter
Reverse Voltage .......................................................................................... 6.0 V
Forward Current ........................................................................................ 60 mA
Surge Current (t
10
µ
s)............................................................................... 2.5 A
Power Dissipation................................................................................... 100 mW
Detector
Collector-Emitter Breakdown Voltage........................................................... 70 V
Emitter-Base Breakdown Voltage ................................................................ 7.0 V
Collector Current ....................................................................................... 50 mA
Collector Current(t <1.0 ms).................................................................... 100 mA
Power Dissipation................................................................................... 150 mW
Package
Isolation Test Voltage.......................................................................... 5300 V
RMS
Creepage ..............................................................................................
7.0 mm
Clearance .............................................................................................
7.0 mm
Isolation Thickness between Emitter and Detector...............................
0.4 mm
Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C...............................................................................10
12
V
IO
=500 V,
T
A
=100
°
C............................................................................ 10
11
Storage Temperature................................................................ 55
°
C to +150
°
C
Operating Temperature ............................................................ 55
°
C to +100
°
C
Junction Temperature................................................................................ 100
°
C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
1.5 mm) ...................................................... 260
°
C
4N25/26/27/28—Characteristics
T
A
=25
°
C
* Indicates JEDEC registered values
Emitter Symbol Min. Typ. Max. Unit Condition
Forward Voltage*
V
F
1.3 1.5 V
I
F
=50 mA
Reverse Current*
I
R
0.1 100
µ
A
V
R
=3.0 V
Capacitance
C
O
25 pF
V
R
=0
Detector
Breakdown Voltage* Collector-Emitter BV
CEO
30 ——V
I
C
=1.0 mA
Emitter-Collector BV
ECO
7.0 ——
I
E
=100
µ
A
Collector-Base BV
CBO
70 ——
I
C
=100
µ
A
I
CEO
(dark)* 4N25/26/27
4N28
——5.0
10
50
100
nA
V
CE
=10 V, (base open)
I
CBO
(dark)* ——2.0 20 nA
V
CB
=10 V, (emitter open)
Capacitance, Collector-Emitter
C
CE
6.0 pF
V
CE
=0
Package
DC Current Transfer Ratio* 4N25/26 CTR 20 50 %
V
CE
=10 V,
I
F
=10 mA
4N27/28 10 30
Isolation Voltage* 4N25
V
IO
2500 ——V Peak, 60 Hz
4N26/27 1500 ——
4N28 500 ——
Saturation Voltage, Collector-Emitter
V
CE(sat)
——0.5 V
I
CE
=2.0 mA,
I
F
=50 mA
Resistance, Input to Output*
R
IO
100 ——G
V
IO
=500 V
Coupling Capacitance
C
IO
0.5 pF f=1.0 MHz
Rise and Fall Times
t
r
,
t
f
2.0
µ
s
I
F
=10 mA
V
CE
=10 V,
R
L
=100
2001 Inneon Technologies Corp. Optoelectronics Division San Jose, CA Phototransistor, Industry Standard
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255 March 27, 2000-00
4N35/36/37/38—Characteristics
T
A
=25
°
C
* Indicates JEDEC registered value
H11A1 through H11A5—Characteristics
T
A
=25
°
C
Emitter Symbol Min. Typ. Max. Unit Condition
Forward Voltage*
V
F
0.9
1.3 1.5
1.7
V
I
F
=10 mA
I
F
=10 mA,
T
A
=55
°
C
Reverse Current*
I
R
0.1 10
µAVR=6.0 V
Capacitance CO25 pF VR=0, f=1.0 MHz
Detector
Breakdown Voltage, Collector-Emitter* 4N35/36/37 BVCEO 30 ——VIC=1.0 mA
4N38 80 ——
Breakdown Voltage, Emitter-Collector* BVECO 7.0 ——VIE=100 µA
Breakdown Voltage, Collector-Base* 4N35/36/37 BVCBO 70 ——VIC=100 µA, IB=1.0 µA
4N38 80 ———
Leakage Current, Collector-Emitter* 4N35/36/37 ICEO 5.0 50 nA VCE=10 V, IF=0
4N38 ——50 VCE=60 V, IF=0
Leakage Current, Collector-Emitter* 4N35/36/37 ICEO ——500 µA VCE=30 V, IF=0, TA=100°C
4N38 6.0 VCE=60 V, IF=0, TA=100°C
Capacitance, Collector-Emitter CCE 6.0 pF VCE=0
Package
DC Current Transfer Ratio* 4N35/36/37 CTR 100 ——%VCE=10 V, IF=10 mA,
4N38 20 —— VCE=1.0 V, IF=20 mA
DC Current Transfer Ratio* 4N35/36/37 CTR 40 50 %VCE=10 V, IF=10 mA,
TA=55 to 100°C
4N38 ——30 ——
Resistance, Input to Output* RIO 1011 ——VIO=500 V
Coupling Capacitance CIO 0.5 pF f=1.0 MHz
Switching Time* tON, tOFF 10 µs IC=2.0 mA, RL=100 Ω, VCC=10 V
Emitter Symbol Min. Typ. Max. Unit Condition
Forward Voltage H11A1H11A4 VF1.1 1.5 V IF=10 mA
H11A5 1.1 1.7
Reverse Current IR——10 µAVR=3.0 V
Capacitance C050 pF VR=0, f=1.0 MHz
Detector
Breakdown Voltage, Collector-Emitter BVCEO 30 ——VIC=1.0 mA, IF=0 mA
Breakdown Voltage, Emitter-Collector BVECO 7.0 ——VIE=100 µA, IF=0 mA
Breakdown Voltage, Collector-Base BVCBO 70 ——VIC=10 µA, IF=0 mA
Leakage Current, Collector-Emitter ICEO 5.0 50 nA VCE=10 V, IF=0 mA
Capacitance, Collector-Emitter CCE 6.0 pF VCE=0
Package
DC Current Transfer Ratio H11A1 CTR 50 ——%VCE=10 V, IF=10 mA
H11A2/3 20 ——
H11A4 10 ——
H11A5 30 ——
Saturation Voltage, Collector-Emitter VCEsat ——0.4 V ICE=0.5 mA, IF=10 mA
Capacitance, Input to Output CIO 0.5 pF
Switching Time tON, tOFF 3.0 µs IC=2.0 mA, RL=100 Ω, VCE=10 V
2001 Inneon Technologies Corp. Optoelectronics Division San Jose, CA Phototransistor, Industry Standard
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256 March 27, 2000-00
MCT2/MCT2E—Characteristics T
A=25°C
MCT270 through MCT277—Characteristics T
A=25°C
Emitter Symbol Min. Typ. Max. Unit Condition
Forward Voltage VF1.1 1.5 V IF=20 mA
Reverse Current IR——10 µAVR=3.0 V
Capacitance CO25 pF VR=0, f=1.0 MHz
Detector
Breakdown Voltage Collector-Emitter BVCEO 30 ——VIC=1.0 mA, IF=0 mA
Emitter-Collector BVECO 7.0 —— IE=100 µA, IF=0 mA
Collector-Base BVCBO 70 —— IC=10 µA, IF=0 mA
Leakage Current Collector-Emitter ICBO 5.0 50 nA VCE=10 V, IF=0
Collector-Base ICBO ——20
Capacitance, Collector-Emitter CCE 10 pF VCE=0
Package
DC Current Transfer Ratio CTR 20 60 %VCE=10 V, IF=10 mA
Capacitance, Input to Output CIO0.5 pF
Resistance, Input to Output RIO 100 G
Switching Time tON, tOFF 3.0 µs IC=2.0 mA, RL=100 Ω, VCE=10 V
Emitter Symbol Min. Typ. Max. Unit Condition
Forward Voltage VF——1.5 V IF=20 mA
Reverse Current IR——10 µAVR=3.0 V
Capacitance CO25 pF VR=0, f=1.0 MHz
Detector
Breakdown Voltage Collector-Emitter BVCEO 30 ——VIC=10 µA, IF=0 mA
Emitter-Collector BVECO 7.0 —— IE=10 µA, IF=0 mA
Collector-Base BVCBO 70 ——— IC=10 µA, IF=0 mA
Leakage Current, Collector-Emitter ICEO ——50 nA VCE=10 V, IF=0 mA
Package
DC Current Transfer Ratio MCT270 CTR 50 ——%VCE=10 V, IF=10 mA
MCT271 45 90
MCT272 75 150
MCT273 125 250
MCT274 225 400
MCT275 70 210
MCT276 15 60
MCT277 100 ——
Current Transfer Ratio, CollectorEmitter MCT271276 CTRCE 12.5 ——%VCE=0.4 V, IF=16 mA
MCT277 40 ——
CollectorEmitter Saturation Voltage VCEsat ——0.4 VICE=2.0 mA, IF=16 mA
Capacitance, Input to Output CIO 0.5 pF
Resistance, Input to Output RIO 1012 VIO=500 VDC
Switching Time MCT270/272 tON, tOFF ——10 µsIC=2.0 mA,
RL=100 ,
VCE=5.0 V
MCT271 ——7.0
MCT273 ——20
MCT274 ——25
MCT275/277 ——15
MCT276 ——3.5
2001 Inneon Technologies Corp. Optoelectronics Division San Jose, CA Phototransistor, Industry Standard
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257 March 27, 2000-00
Figure 1. Forward Voltage vs. Forward Current
Figure 2. Normalized Non-saturated and Saturated
CTR, TA=25°C vs. LED Current
Figure 3. Normalized Non-saturated and Saturated
CTR, TA=50°C vs. LED Current
100101.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF - Forward Current - mA
VF - Forward Voltage - V
TA = –55°C
TA = 25°C
TA = 85°C
Normalized to:
0.0
0.5
1.0
1.5
0 1 10 100
IF - LED Current - mA
NCTR
NCTR(SAT)
NCTR - Normlized CTR
CTRce(sat) Vce=0.4 V
Vce=10 V, IF=10 mA, TA=25°C
TA=25°C
100101.1
0.0
0.5
1.0
1.5
IF - LED Current - mA
NCTR - Normalized CTR
Normalized to:
CTRce(sat) Vce=0.4 V
Vce=10 V, IF=10 mA, TA=25°C
NCTR
NCTR(SAT)
TA=50°C
Figure 4. Normalized Non-saturated and Saturated
CTR, TA=70°C vs. LED Current
Figure 5. Normalized Non-saturated and Saturated
CTR, TA=85°C vs. LED Current
Figure 6. Collector-emitter Current vs. Temperature
and LED Current
100101.1
0.0
0.5
1.0
1.5
IF - LED Current - mA
NCTR - Normalized CTR
Normalized to:
CTRce(sat) Vce=0.4 V
Vce=10 V, IF=10 mA, TA=25°C
NCTR
NCTR(SAT)
TA=70°C
100101.1
0.0
0.5
1.0
1.5
IF - LED Current - mA
NCTR - Normalized CTR
Normalized to:
CTRce(sat) Vce = 0.4 V
Vce=10 V, IF=10 mA, TA=25°C
NCTR
NCTR(SAT)
TA=85°C
6050403020100
0
5
10
15
20
25
30
35
50°C
70°C
85°C
IF - LED Current - mA
Ice - Collector Current - mA
25°C
2001 Inneon Technologies Corp. Optoelectronics Division San Jose, CA Phototransistor, Industry Standard
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258 March 27, 2000-00
Figure 7. Collector-emitter Leakage Current vs. Temp.
Figure 8. Normalized CTRcb vs. LED Current and Temp.
Figure 9. Normalized Photocurrent vs. IF and Temp.
10080604020020
10
10
10
10
10
10
10
10
2
1
0
1
2
3
4
5
TA - Ambient Temperature - °C
Iceo - Collector-Emitter - nA
Typical
Vce = 10 V
Normalized to:
0.0
0.5
1.0
1.5
25°C
50°C
70°C
IF - LED Current - mA
NCTRcb - Normalized CTRcb
.1 1 10 100
Vcb=9.3 V, IF=10 mA, TA=25°C
Normalized to:
0.01
0.1
1
10
IF - LED Current - mA
Normalized Photocurrent
.1 1 10 100
IF=10 mA, TA=25°C
Nib, TA=20°C
Nib, TA=25°C
Nib, TA= 50°C
Nib, TA=70°C
Figure 10. Normalized Non-saturated HFE vs. Base
Current and Temperature
Figure 11. Normalized HFE vs. Base Current and Temp.
Figure 12. Propagation Delay vs. Collector Load Resistor
Normalized to:
0.4
0.6
0.8
1.0
1.2
Ib - Base Current - µA
1 10 100 1000
Ib=20 µA, Vce=10 V, T
A
=25°C
25°C
50°C
70°C
20°C
NHFE - Normalized HFE
0.0
0.5
1.0
1.5
25°C
20°C
50°C
70°C
NHFE(sat) - Normalized
Saturated HFE
1 10 100 1000
Vce=10 V, Ib=20 µA
TA=25°C
Vce=0.4 V
Ib - Base Current - µA
Normalized to:
1
10
100
1000
RL - Collector Load Resistor - k
tPLH - Propagation Delay - µs
2.5
2.0
1.5
1.0
tPHL - Propagation Delay - µs
.1 1 10 100
IF=10 mA, TA=25°C
V
CC
=5.0 V, Vth=1.5 V
tPLH
tPHL
Figure 13. Switching Timing
IF
tR
=1.5 V
VO
tD
tStF
tPHL
tPLH
VTH
Figure 14. Switching Schematic
VCC = 5.0 V
F=10 KHz,
DF=50% RL
VO
IF=10 mA