SEMICONDUCTOR KRC860U~KRC864U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES *With Built-in Bias Resistors. 1 6 2 5 3 4 DIM A A1 B A C *Reduce a Quantity of Parts and Manufacturing Process. A1 C *Simplify Circuit Design. *High Packing Density. D H 6 C 5 0.65 H 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + T 0.15+0.1/-0.05 D G EQUIVALENT CIRCUIT (TOP VIEW) EQUIVALENT CIRCUIT B1 C T 4 MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + G R1 B 1. 2. 3. 4. 5. 6. Q1 Q2 E 1 2 Q1 Q1 Q2 Q2 Q2 Q1 EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR 3 US6 MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector Power Dissipation Collector-Emitter Voltage VCEO 50 V Junction Temperature Emitter-Base Voltage VEBO 5 V Storage Temperature Range IC Collector Current 100 CHARACTERISTIC SYMBOL RATING UNIT PC * 200 mW Tj 150 Tstg -55150 * Total Rating. mA ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA DC Current Gain hFE VCE=5V, IC=1mA 120 - - IC=10mA, IB=0.5mA - 0.1 0.3 V VCE=10V, IC=5mA - 250 - MHz KRC860U 3.29 4.7 6.11 KRC861U 7 10 13 70 100 130 KRC863U 15.4 22 28.6 KRC864U 32.9 47 61.1 VCE(sat) Collector-Emitter Saturation Voltage fT * Transition Frequency R1 KRC862U Input Resistor k Note : * Characteristic of Transistor Only. Marking 6 5 4 Lot No. MARK SPEC Type Name TYPE KRC860U KRC861U KRC862U KRC863U KRC864U MARK NK NM NN NO NP 1 2008. 11. 20 Revision No : 5 2 3 1/4 KRC860U~KRC864U ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC Rise Time SYMBOL MIN. TYP. MAX. KRC860U - 0.025 - KRC861U - 0.03 - - 0.3 - KRC863U - 0.06 - KRC864U - 0.11 - KRC860U - 3.0 - VO=5V - 2.0 - VIN=5V - 6.0 - RL=1k - 4.0 - KRC864U - 5.0 - KRC860U - 0.2 - KRC861U - 0.12 - - 2.0 - KRC863U - 0.9 - KRC864U - 1.4 - KRC862U tr KRC861U Switching Time Storage Time KRC862U tstg KRC863U Fall Time 2008. 11. 20 KRC862U Revision No : 5 TEST CONDITION tf UNIT S 2/4 KRC860U~KRC864U hFE - IC KRC860U 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =5V 0.3 1 3 10 30 100 DC CURRENT GAIN hFE 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 V CE =5V 0.3 1 3 10 30 100 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 3 10 30 KRC861U IC /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 3 10 30 COLLECTOR CURRENT IC (mA) hFE - IC VCE(sat) - IC 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 V CE =5V 10 0.3 1 3 10 30 COLLECTOR CURRENT IC (mA) Revision No : 5 100 100 2 COLLECTOR CURRENT IC (mA) KRC862U DC CURRENT GAIN hFE 0.1 VCE(sat) - IC 2k 2008. 11. 20 0.5 0.3 hFE - IC KRC861U 0.1 IC /I B =20 1 COLLECTOR CURRENT IC (mA) 2k 10 0.1 KRC860U 2 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 0.1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) DC CURRENT GAIN hFE 2k COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - IC 100 KRC862U 2 I C /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT IC (mA) 3/4 KRC860U~KRC864U hFE - IC KRC863U 1k 500 300 Ta=100 C 100 Ta=25 C Ta=-25 C 50 30 V CE =5V 10 0.1 0.3 1 3 10 30 100 DC CURRENT GAIN hFE 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 3 10 30 hFE - IC VCE(sat) - IC KRC864U 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =5V 10 0.3 1 3 10 30 COLLECTOR CURRENT IC (mA) 2008. 11. 20 I C /I B =20 1 COLLECTOR CURRENT IC (mA) 2k 0.1 KRC863U 2 COLLECTOR CURRENT IC (mA) Revision No : 5 100 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) DC CURRENT GAIN hFE 2k COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - IC 100 KRC864U 2 I C /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT IC (mA) 4/4