Back Opto-Switch EE-SY169A Reflective Phototransistor output. Optimum sensing distance 4mm. High-quality model with plastic lenses. Highly precise sensing range with a tolerance of 0.6 mm horizontally and vertically. Convergent reflective model. Dimensions Internal Circuit A C K E Terminal No. A K C E Name Anode Cathode Collector Emitter Unless otherwise specified, the tolerances are as shown below. 10.1 dia. Two, C0.2 10.1 dia. Dimensions Tolerance 3 mm max. 0.3 3 t mm v 6 0.375 6 t mm v 10 0.45 10 t mm v 18 0.55 18 t mm v 30 0.65 Specifications Absolute Maximum Ratings (Ta = 25C) Item Emitter Detector Ambient temperature Note: Symbol Rated value Forward current IF 50 mA (see note 1) Pulse forward current IFP 1 A (see note 2) Reverse voltage VR 3V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr 0C to 70C Storage Tstg -20C to 80C Soldering Tsol 260C 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.5 V max. IF = 30 mA Reverse current IR 10 A max. VR = 4 V Peak emission wavelength P 920 nm typ. IF = 20 mA Light current IL 160 A min., 2,000 A max. IF = 20 mA, VCE = 5 V White paper with a reflection ratio of 90%, d = 4 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 5 V, 0 x Leakage current ILEAK 2 A max. IF = 20 mA, VCE = 5 V with no reflection Collector-Emitter saturated voltage VCE (sat) --- --- Peak spectral sensitivity wavelength P 850 nm typ. VCE = 5 V Rising time tr 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Falling time tf 30 s typ. VCC = 5 V, RL = 1 k, IL = 1 mA Note: The letter "d" indicates the distance between the top surface of the sensor and the sensing object. Engineering Data Light current I L ( A) Response time tr, tf ( s) Dark current I D (nA) Distance d (mm) IF = 10 mA Collector-Emitter voltage VCE (V) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Relative light current I L (%) Light current I L ( A) Sensing object: White paper with a reflection factor of 90% IF = 20 mA Vcc = 5 V Ta = 25C VCE = 10 V 0 x Ambient temperature Ta (C) Ta = 25C IF = 20 mA VCE = 10 V IF = 30 mA Response Time vs. Load Resistance Characteristics (Typical) Sensing object: White IF = 20 mA paper with a reflection VCE = 5 V factor of 90% Ta = 25C d1 = 3.5 mm d1 = 4.0 mm d1 = 4.5 mm Sensor Distance d2 (mm) Direction Load resistance RL (k) Sensing Position Characteristics (Typical) Relative light current I L (%) Forward current I F (mA) Relative light current I L (%) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V Sensing Distance Characteristics (Typical) Ta = 25C d = 4 mm Sensing object: White paper with a reflection IF = 40 mA factor of 90% IF = 5 mA Ambient temperature Ta (C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) d=4 mm VCE =5V Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Light current I L ( A) Light Current vs. Forward Current Characteristics (Typical) Collector dissipation Pc (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 5 V Ta = 25C d1 = 4 mm Sensing object: White paper with a reflection factor of 90% Sensing obd = 0 ject Direction Sensor Distance d2 (mm) Distance d (mm) d = 3 mm Ta = 25C d = 4 mm IF = 20 mA d = 5 mm VCE = 10 V Sensing object: White paper with a reflection factor of 90% Angle deviation () Distance d2 (mm) Sensing Angle Characteristics (Typical) Relative light current I L (%) Relative light current I L (%) Sensing Angle Characteristics (Typical) Ta = 25 IF = 20 mA VCE = 10 V Sensing object: White paper with a reflection factor of 90% Distance d2 (mm) Response Time Measurement Circuit Input d = 3 mm d = 4 mm d = 5 mm Output 90 % 10 % Input Output Angle deviation ()