© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 5 1Publication Order Number:
TIP140/D
TIP140, TIP141, TIP142,
(NPN); TIP145, TIP146,
TIP147, (PNP)
TIP141, TIP142, TIP146, and TIP147 are Preferred Devices
Darlington Complementary
Silicon Power Transistors
Designed for general−purpose amplifier and low frequency
switching applications.
Features
•High DC Current Gain −
Min hFE = 1000 @ IC
= 5.0 A, VCE = 4 V
•Collector−Emitter Sustaining Voltage − @ 30 mA
VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145
= 80 Vdc (Min) − TIP141, TIP146
= 100 Vdc (Min) − TIP142, TIP147
•Monolithic Construction with Built−In Base−Emitter Shunt Resistor
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol TIP140
TIP145 TIP141
TIP146 TIP142
TIP147 Unit
Collector − Emitter Voltage VCEO 60 80 100 Vdc
Collector − Base Voltage VCB 60 80 100 Vdc
Emitter − Base Voltage VEB 5.0 Vdc
Collector Current
− Continuous
− Peak (Note 1)
IC10
15
Adc
Base Current − Continuous IB0.5 Adc
Total Power Dissipation
@ TC = 25_CPD125 W
Operating and St orage
Juncti on Temperature Range TJ, Tstg −65 to +150 _C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case RqJC 1.0 °C/W
Thermal Resistance,
Junction−to−Ambient RqJA 35.7 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. 5 ms, v 10% Duty Cycle.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−100 VOLTS, 125 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
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SOT−93 (TO−218)
CASE 340D
STYLE 1
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
TIP14x = Device Code
x = 0, 1, 2, 5, 6, or 7
G = Pb−Free Package
AYWWG
TIP14x
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
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2
DARLINGTON SCHEMATICS
BASE
EMITTER
COLLECTOR
≈8.0 k ≈40
BASE
EMITTER
COLLECTOR
≈8.0 k ≈40
NPN
TIP140
TIP141
TIP142
PNP
TIP145
TIP146
TIP147
ORDERING INFORMATION
Device Package Shipping
TIP140 SOT−93 (TO−218) 30 Units / Rail
TIP140G SOT−93 (TO−218)
(Pb−Free) 30 Units / Rail
TIP141 SOT−93 (TO−218) 30 Units / Rail
TIP141G SOT−93 (TO−218)
(Pb−Free) 30 Units / Rail
TIP142 SOT−93 (TO−218) 30 Units / Rail
TIP142G SOT−93 (TO−218)
(Pb−Free) 30 Units / Rail
TIP145 SOT−93 (TO−218) 30 Units / Rail
TIP145G SOT−93 (TO−218)
(Pb−Free) 30 Units / Rail
TIP146 SOT−93 (TO−218) 30 Units / Rail
TIP146G SOT−93 (TO−218)
(Pb−Free) 30 Units / Rail
TIP147 SOT−93 (TO−218) 30 Units / Rail
TIP147G SOT−93 (TO−218)
(Pb−Free) 30 Units / Rail
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
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3
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎ
ÎÎÎ
Typ
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mA, IB = 0) TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
60
80
100
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
−
−
−
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
−
−
−
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) TIP140, TIP145
(VCE = 40 Vdc, IB = 0) TIP141, TIP146
(VCE = 50 Vdc, IB = 0) TIP142, TIP147
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEO
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
−
−
−
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
−
−
−
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
2.0
2.0
2.0
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 60 V, IE = 0) TIP140, TIP145
(VCB = 80 V, IE = 0) TIP141, TIP146
(VCB = 100 V, IE = 0) TIP142, TIP147
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICBO
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
−
−
−
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
−
−
−
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
1.0
1.0
1.0
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
2 0
ÎÎÎ
ÎÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 5.0 A, VCE = 4.0 V)
(IC = 10 A, VCE = 4.0 V)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
1000
500
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
−
−
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
−
−
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 5.0 A, IB = 10 mA)
(IC = 10 A, IB = 40 mA)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
−
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
2.0
3.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage
(IC = 10 A, IB = 40 mA)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(sat)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
3.5
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage
(IC = 10 A, VCE = 4.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(on)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
3.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Resistive Load (See Figure 1)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Delay Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCC = 30 V, IC = 5.0 A,
IB = 20 mA, Duty Cycle v 2.0%,
IB1 = IB2, RC & RB Varied, TJ = 25_C)
ÎÎÎÎÎ
ÎÎÎÎÎ
td
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
0.15
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ms
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Rise Time
ÎÎÎÎÎ
ÎÎÎÎÎ
tr
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
0.55
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ms
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Storage Time
ÎÎÎÎÎ
ÎÎÎÎÎ
ts
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
2.5
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ms
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Fall Time
ÎÎÎÎÎ
ÎÎÎÎÎ
tf
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
2.5
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ms
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
Figure 1. Switching Times Test Circuit
10
0.2
Figure 2. Switching Times
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
5.0
2.0
0.5
0.1
0.5 1.0 3.0 5.0 10 20
0.2
PNP
NPN
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+12 V
V1
appox.
−8.0 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25 ms
0
RB
51 D1
+4.0 V
VCC
−30 V
RC
TUT
≈ 8.0 k ≈ 40
SCOPE
for td and tr, D1 is disconnected
and V2 = 0
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
For NPN test circuit reverse diode and voltage polarities.
1.0
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
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4
VCE(SAT), COLLECTOR−EMITTER SATURATION VOLTAGE (VOLTS)
VBE, BASE−EMITTER VOLTAGE (VOLTS)
VBE, BASE−EMITTER VOLTAGE (VOLTS)
5000
0.5
Figure 3. DC Current Gain versus Collector Current
IC, COLLECTOR CURRENT (AMPS)
300
1.0 2.0 3.0 5.0 7.0 10
500
hFE, DC CURRENT GAIN
VCE = 4.0 V
4.0
NPN
TIP140, TIP141, TIP142 PNP
TIP145, TIP146, TIP147
Figure 4. Collector−Emitter Saturation Voltage
5.0
−75
TJ, JUNCTION TEMPERATURE (°C)
0.5
IC = 10 A, IB = 4.0 mA
2.0
3.0
4.0
−75
TJ, JUNCTION TEMPERATURE (°C)
−25 25 75 175
3.6
3.2
2.8
2.4
0.8
Figure 5. Base−Emitter Voltage
2000
1000
TJ = 150°C
25°C
−55 °C
IC, COLLECTOR CURRENT (AMPS)
hFE, DC CURRENT GAIN
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
125
20,000
1000
2000
3000
5000
10,000
7000
1.0
0.7
0.5
VCE(SAT), COLLECTOR−EMITTER SATURATION VOLTAGE (VOLTS)
0.5 1.0 2.0 3.0 5.0 7.0 104.00.7
−50 −25 0 25 50 75 100 125 150 175
5.0
−75
2.0
3.0
1.0
0.7
−50 −25 0 25 50 75 100 125 150 175
2.0
1.6
1.2
4.0
−75 −25 25 75 175
3.6
3.2
2.8
2.4
0.8
125
2.0
1.6
1.2
100°C
TJ = 150°C
100°C
25°C
−55 °C
VCE = 4.0 V
IC = 5.0 A, IB = 10 mA
IC = 1.0 A, IB = 2.0 mA
IC = 10 A, IB = 4.0 mA
IC = 5.0 A, IB = 10 mA
IC = 1.0 A, IB = 2.0 mA
VCE = 4.0 V
IC = 10 A
5.0 A
1.0 A
VCE = 4.0 V
IC = 10 A
5.0 A
1.0 A
TYPICAL CHARACTERISTICS
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
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5
ACTIVE−REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T J(pk) = 150_C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ TC = 25°C
Figure 6. Active−Region Safe Operating Area
dc
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
2.0
IC, COLLECTOR CURRENT (AMP) (mA)
10
10
0.2
5.0
20
1.0
20
TJ = 150°C
5030
TIP140, 145
3.0
7.0
15 70 100
TIP141, 146
TIP142, 147
IC, COLLECTOR CURRENT (AMPS)
15
10
1.0
2.0
5.0
7.0
Figure 7. Unclamped Inductive Load
L, UNCLAMPED INDUCTIVE LOAD (mH)
0.5 1.0 2.0 5.0 10 20 50 100
100 mJ
INPUT
MPS−U52
50
50
RBB1
1.5k
RBB2
= 100
VBB2 = 0
VBB1 = 10 V
TUT
VCE MONITOR
100 mH
VCC = 20 V
IC
MONITOR
RS = 0.1
TEST CIRCUIT
N
OTE 1: Input pulse width is increased until ICM = 1.42 A.
N
OTE 2: For NPN test circuit reverse polarities.
INPUT
VOLTAGE
COLLECTOR
CURRENT
1.42 A
VCE(sat)
−20 V
COLLECTOR
VOLTAGE
V(BR)CER
w ≈ 7.0 ms (SEE NOTE 1)
5.0 V
0
100 ms
0
VOLTAGE AND CURRENT WAVEFORMS
Figure 8. Inductive Load
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
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6
PD, POWER DISSIPATION (WATTS)
PNP
NPN
Figure 9. Magnitude of Common Emitter
Small−Signal Short−Circuit Forward
Current Transfer Ratio
f, FREQUENCY (MHz)
2.0
1.0
10
5.0
100
1.0
3.0 5.0
7.0
2.0 7.0 10
VCE = 10 V
IC = 1.0 A
TJ = 25°C
5.0
4.0
0
1.0
2.0
3.0
Figure 10. Free−Air Temperature Power Derating
TA, FREE−AIR TEMPERATURE (°C)
0 40 80 120 160 200
hfe , SMALL−SIGNAL FORWARD CURRENT
TRANSFER RATIO
20
50
70
PNP
NPN
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
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7
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
A
D
VG
K
SL
U
BQEC
J
H
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A−−− 20.35 −−− 0.801
B14.70 15.20 0.579 0.598
C4.70 4.90 0.185 0.193
D1.10 1.30 0.043 0.051
E1.17 1.37 0.046 0.054
G5.40 5.55 0.213 0.219
H2.00 3.00 0.079 0.118
J0.50 0.78 0.020 0.031
K31.00 REF 1.220 REF
L−−− 16.20 −−− 0.638
Q4.00 4.10 0.158 0.161
S17.80 18.20 0.701 0.717
U4.00 REF 0.157 REF
V1.75 REF 0.069
123
4
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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