Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 4, 12/2010 RF Power Field Effect Transistors MRF5S21100HR3 MRF5S21100HSR3 Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. * Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA, Pout = 23 Watts Avg., f = 2167.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 13.5 dB Drain Efficiency -- 26% IM3 @ 10 MHz Offset -- --37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- --40 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power Features * Characterized with Series Equivalent Large--Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2110--2170 MHz, 23 W AVG., 28 V 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465--06, STYLE 1 NI--780 MRF5S21100HR3 CASE 465A--06, STYLE 1 NI--780S MRF5S21100HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 273 1.56 W W/C Storage Temperature Range Tstg -- 65 to +150 C Case Operating Temperature TC 150 C Operating Junction Temperature TJ 200 C Symbol Value (1,2) Unit ARCHIVE INFORMATION ARCHIVE INFORMATION N--Channel Enhancement--Mode Lateral MOSFETs Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 100 W CW Case Temperature 78C, 23 W CW RJC 0.57 0.64 C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (c) Freescale Semiconductor, Inc., 2006, 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF5S21100HR3 MRF5S21100HSR3 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 0.5 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 Adc) VGS(th) 2.5 2.8 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1050 mAdc) VGS(Q) -- 3.8 -- Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.5 Adc) VDS(on) -- 0.24 0.3 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2.5 Adc) gfs -- 6 -- S Crss -- 2.14 -- pF Characteristic On Characteristics (DC) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg., f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 12.5 13.5 -- dB Drain Efficiency D 24 26 -- % Intermodulation Distortion IM3 -- --37 --35 dBc ACPR -- --40 --38 dBc IRL -- --16 --9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. ARCHIVE INFORMATION ARCHIVE INFORMATION Off Characteristics MRF5S21100HR3 MRF5S21100HSR3 2 RF Device Data Freescale Semiconductor R4 VBIAS B1 R1 + C12 R2 C5 C10 C9 C4 C3 R3 RF INPUT Z2 C13 Z3 Z4 Z5 C7 W1 Z16 Z10 Z11 Z12 Z13 Z14 Z9 VSUPPLY + C11 C8 Z8 Z7 Z1 C6 Z6 Z15 C2 Z17 RF OUTPUT C15 C14 C1 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.674 x 0.080 Microstrip 0.421 x 0.080 Microstrip 0.140 x 0.080 Microstrip 1.031 x 0.080 Microstrip 0.380 x 0.643 Microstrip 0.080 x 0.643 Microstrip 0.927 x 0.048 Microstrip 0.620 x 0.048 Microstrip 0.079 x 1.136 Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB 0.368 x 1.136 Microstrip 0.151 x 0.393 Microstrip 0.280 x 0.220 Microstrip 0.481 x 0.142 Microstrip 0.138 x 0.080 Microstrip 0.344 x 0.080 Microstrip 0.147 x 0.099 Microstrip 0.859 x 0.080 Microstrip Arlon GX--0300--SS--22, 0.030, r = 2.55 Figure 1. MRF5S21100HR3(SR3) Test Circuit Schematic Table 5. MRF5S21100HR3(SR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short RF Bead 2743019447 Fair--Rite C1, C2 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC C3 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC C4 0.1 F Chip Capacitor C1210C104J5RAC Kemet C5, C7 7.5 pF Chip Capacitors ATC100B7R5JT500XT ATC C6 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC C8 1K pF Chip Capacitor ATC100B102JT500XT ATC C9, C10 0.56 F Chip Capacitors C1825C564J5RAC Kemet C11 470 F, 63 V Electrolytic Capacitor EKME630ELL471MK25S Multicomp C12 100 F, 50 V Electrolytic Capacitor MCHT101M1HB--1017--RH Multicomp C13 0.6--4.5 pF Gigatrim Variable Capacitor 27271SL Johanson C14 2.7 pF Chip Capacitor ATC100B2R7CT500XT ATC C15 0.4--2.5 pF Gigatrim Variable Capacitor 27271SL Johanson R1 1 k, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R2 560 k, 1/4 W Chip Resistor CRCW12065600FKEA Vishay R3, R4 12 , 1/4 W Chip Resistors CRCW120612R0FKEA Vishay ARCHIVE INFORMATION ARCHIVE INFORMATION DUT MRF5S21100HR3 MRF5S21100HSR3 RF Device Data Freescale Semiconductor 3 VGG C5 C6 C9 R1 B1 R2 R3 R4 C3 C10 C4 C2 CUT OUT AREA ARCHIVE INFORMATION C14 VDD W1 C7 C8 C1 C13 C11 C15 MRF5S21100L Rev 03 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S21100HR3(SR3) Test Circuit Component Layout ARCHIVE INFORMATION C12 MRF5S21100HR3 MRF5S21100HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS G ps , POWER GAIN (dB) 30 D 12 11 10 IRL 9 8 20 --20 --25 --30 IM3 7 --35 6 --40 ACPR 5 --45 2040 2060 2080 2100 2120 2140 2160 2180 2200 2220 2240 0 --10 --20 --30 --40 --50 f, FREQUENCY (MHz) Figure 3. 2--Carrier W--CDMA Broadband Performance --15 15 IDQ = 1400 mA 1250 mA 14 13 1050 mA 850 mA 650 mA 12 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurement, 10 MHz Tone Spacing 11 10 1 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 16 G ps , POWER GAIN (dB) VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurement, 10 MHz Tone Spacing --20 --25 --30 IDQ = 1400 mA --35 --40 1250 mA --45 650 mA --55 10 1 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Third Order Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) --20 56 --25 55 3rd Order --35 --40 5th Order --45 7th Order --50 VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1050 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz --55 --60 0.1 1 100 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two--Tone Power Gain versus Output Power --30 1050 mA 850 mA --50 100 10 Pout , OUTPUT POWER (dBm) ARCHIVE INFORMATION 25 VDD = 28 Vdc, Pout = 23 W (Avg.), IDQ = 1050 mA 2--Carrier W--CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) ARCHIVE INFORMATION 35 Gps 13 IRL, INPUT RETURN LOSS (dB) 14 D, DRAIN EFFICIENCY (%) 40 IM3 (dBc), ACPR (dBc) 15 Ideal P3dB = 51.88 dBm (154.17 W) 54 53 P1dB = 51.18 dBm (131.22 W) 52 Actual 51 50 VDD = 28 Vdc, IDQ = 1050 mA Pulsed CW, 8 sec(on), 1msec(off) f = 2140 MHz 49 48 34 35 36 37 38 39 40 41 TWO--TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power 42 MRF5S21100HR3 MRF5S21100HSR3 RF Device Data Freescale Semiconductor 5 109 --15 30 --20 D --25 IM3 25 20 --30 --35 Gps 15 --40 10 ACPR 5 --45 --50 0 IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 1050 mA f1 = 2135 MHz, f2 = 2145 MHz 2x W--CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) 35 MTTF FACTOR (HOURS x AMPS2) 40 107 106 100 --55 1 108 10 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (_C) Pout, OUTPUT POWER (WATTS) AVG. W--CDMA This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 8. 2--Carrier W--CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power ARCHIVE INFORMATION ARCHIVE INFORMATION D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS Figure 9. MTTF Factor versus Junction Temperature W--CDMA TEST SIGNAL --20 100 10 --40 --50 1 --60 (dB) PROBABILITY (%) 3.84 MHz Channel BW --30 0.1 --70 --80 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.001 --90 --100 --110 0.0001 0 2 4 6 8 10 PEAK--TO--AVERAGE (dB) Figure 10. CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal --120 --25 --ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW --IM3 in 3.84 MHz BW --20 --15 --10 --5 0 5 10 +IM3 in 3.84 MHz BW 15 20 f, FREQUENCY (MHz) Figure 11. 2-Carrier W-CDMA Spectrum 25 MRF5S21100HR3 MRF5S21100HSR3 6 RF Device Data Freescale Semiconductor Zo = 10 Zload ARCHIVE INFORMATION Zsource f = 2200 MHz f = 2100 MHz VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg. f MHz Zsource Zload 2100 3.4 -- j7.2 1.2 -- j2.1 2120 3.4 -- j6.5 1.4 -- j2.3 2160 4.9 -- j7.0 2.2 -- j3.0 2200 3.4 -- j8.6 1.7 -- j2.1 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source ARCHIVE INFORMATION f = 2200 MHz f = 2100 MHz Z load Figure 12. Series Equivalent Source and Load Impedance MRF5S21100HR3 MRF5S21100HSR3 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb T A M B M M M bbb ARCHIVE INFORMATION N M T A M T A M B M B M ccc M T A M M aaa M T A M (LID) B S (LID) ccc H R (INSULATOR) M (INSULATOR) B M C F E A T A SEATING PLANE (FLANGE) 1 K 2X 2 D bbb M T A M B M N (LID) ccc M M T A R M B M ccc M T A M M B M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H C 3 E A A MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B B INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF CASE 465--06 ISSUE G NI--780 MRF5S21100HR3 4X U (FLANGE) (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc F T DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 -----0.040 -----0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 -----1.02 -----0.76 0.127 REF 0.254 REF 0.381 REF ARCHIVE INFORMATION B STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE SEATING PLANE (FLANGE) CASE 465A--06 ISSUE H NI--780S MRF5S21100HSR3 MRF5S21100HR3 MRF5S21100HSR3 8 RF Device Data Freescale Semiconductor REVISION HISTORY The following table summarizes revisions to this document. Revision Date 4 Dec. 2010 Description * Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. * Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 * Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 * Added Revision History, p. 9 ARCHIVE INFORMATION ARCHIVE INFORMATION * Data sheet archived. Parts no longer manufactured. MRF5S21100HR3 MRF5S21100HSR3 RF Device Data Freescale Semiconductor 9 Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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ARCHIVE INFORMATION ARCHIVE INFORMATION How to Reach Us: Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006, 2010. All rights reserved. MRF5S21100HR3 MRF5S21100HSR3 Document Number: MRF5S21100H Rev. 4, 12/2010 10 RF Device Data Freescale Semiconductor