pReLt is ACN: nis ne * its + C8 Not! 3 pat amet Some MINARY 50 ke pans ee MITSUBISHI SEMICONDUCTOR (GaAs FET) MGFC36V6472A 6.4~7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4~7.2GHz band amplifiers . package guarantees high reliability. FEATURES @Ciass A operation @ Internally matched to 502 system @ High output power Pigs = 4W(TYP) @6.4~7.2GHz @ High power gain GiP = QdB(TYP) @6.4~7.2GHz @ High power added efficiency Nadd = 30%(TYP) @6.4~7.2GHz @ Hermetically sealed metal-ceramic package @ Low distortion (Item : 51} IMs = 45dBe(TYP) @ Po = 25(dBm) S.C.L. APPLICATION Itern-O1 {tem-51 : 6.4~7.2GHz band power amplifier : Digital radio communication QUALITY GRADE 1G ABSOLUTE MAXIMUM RATINGS (Ta = 25C) The hermetically sealed metal - ceramic OUTLINE DRAWING 12.9+0.2 2MIN 2MIN 0.6 + 0.15 Unit : millimeters (inches) 21.0 + 0.300.827 + 0.012) "(0.102 + 0.008) GF-8 42,0(0.472) . @GATE @SOURCE (FLANGE) @ DRAIN RECOMMENDED BIAS CONDITIONS @ Vos = 10V @ lp = 1.2A @ Re = 100(Q) @ Refer to Bias Procedure Symbol Parameter Ratings Unit Vepo Gate to drain voltage -15 Vv Vaso Gate to source voltage -15 Vv ID Drain current 3.75 A ior Reverse gate current - 10 mA IGF Forward gate current 21 mA PT Total power dissipation * 1 25 Ww Toh Channel temperature 175 a0 Tstg Storage temperature - 65~+ 175 C *1:Te = 25 ELECTRICAL CHARACTERISTICS (Ta = 25C) es Limits . Symbol Parameter Test conditions Min Typ Man Unit loss Saturated drain current Vos = 3V, Ves = OV - - 3.75 A gm Transconductance Vos = 3V, lb=1.1A - 1 - S Vas(off) | Gate to source cut-off voltage Vos = 3V, lo = 10mA - - -45 Vv PidB Output power at 1dB gain compression 35 36 - dBm GuP Linear power gain 8 9 - dB lo Drain current Vos = 10V, Ip = 1.2A, f = 6.4~7.2GHz > - 1.8 A Tadd Power added efficiency - 30 % IM3 3rd order 1M distortion * 1 -42 | - 45 - dBc Rtntch-c) | Thermal resistance * 2) AV method = 5 6 | C/W 1: ltem-51, 2-tone test Po = 25dBm Single Carrier Level f = 7.2GHz Af = 10MHz * 2: Channel! to case > NOV. ' 97 MITSUBISHI ELECTRIC aegtion ator shang? yee MITSUBISHI SEMICONDUCTOR (GaAs FET) MGFC36V6472A 6.4~7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS P1aB, GLP vs. f Po, 7 add vs. Pin T T t S Vos = 10V a Vos = 10V GP= 10987 de 3 los = 1.2A 5 > los = 1.2A oY 0 a 38 5 = TF=6.8GH2 Po & wo Pics ~ > > 637 z eg 30 Ly 40 & 36 [ig 2 G 25 S s Gue Ve S "4 30 7 a a. T-. te z nadd a _ SF 8 5 2% 2 g a oc ao Qa E s 5 15 10 > 2 oO LL cc 5 "| o 6.4 65 66 6768 69 7.0 7.1 7.2 10 15 20 25 30 0 2 FREQUENCY f (GHz) INPUT POWER Pin (dBm) Po, IMs vs. Pin 32 > i 30 Po 2 oO to 3 5% ~ 28 -10 AY E oO - a =2 2 26 ~20 _ rs; oO Ww S ~ 24 -30 & F y Vos = 10V co 5 22 los = 1.2A 40 8 R o f = 7.2GHz 5 Oo 5 20 At=10MHz}~50 5 & 2 tone test o ZD 18 _ Oo 1315 17 19 21 23 25 27 INPUT POWER Pin (dBm) S.C. L. S PARAMETERS (Ta = 25, Vos = 10V, Ips = 1.2A) f S parameters (GHz) Sit S21 S12 S22 Magn. Angle(deg.) Magn. Angie(deg.) Magn. Angle(deg.) Magn. Angle(deg.) 6.4 0.50 178 2.68 -61 0.078 -110 0.15 48 6.5 0.43 162 2.76 -75 0.084 124 0.18 32 6.6 0.36 143 2.83 -90 0.088 138 0.21 15 6.7 0.30 122 2.88 104 0.090 -152 0.24 ~1 6.8 0.25 99 2.93 -119 0.092 165 0.27 -17 6.9 0.21 77 2.92 - 133 0.095 -179 0.29 ~3) 7.0 0.18 53 2.87 -148 0.098 167 0.30 ~47 7.1 0.15 31 2.80 ~162 0.101 153 0.31 -62 7.2 0.12 ] 2.71 -177 0.102 137 0.32 79 NOV. 97 MITSUBISHI ELECTRIC