SOT-23 Plastic-Encapsulate Transistors Wi MMBT5401LT1 TRANSISTOR (PNP) 1.BASE 2.EMITTER 3.COLLECTOR 7 UNIT: mm ELECTRICAL. CHARACTERISTICS (Tamp=25C unless otherwise specified) me Wa Power dissipation Pcm: 0.3 W (Tamb=25C ) ctor current Icm: -0.6A Collector-base voltage ViBR)CBO:-160V Operating and storage junction temperature range Ty, Tstg :-55C to+150C TOT Collector-base breakdown voltage V(BR)CBO Ic=-100n A, te=0 -160 Vv Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, iB=0 -150 Vv Emitter-base breakdown voltage V(BR}JEBO le=-10n A, iB=0 5 Vv Collector cut-off current icBo Vep=-120V,le=0 -0.05| HA Emitter cut-off current lEBO Ves=-4V,ic=OmA 0.05] HA NFE(1) Vce=-5V,lc=-1mA 80 DC current gain hFE(2) VcE=-5V, ic=-10mA 100 200 " WFE(3) Vce=-5V, Ic=-50mA 50 Collector-emitter saturation voitage VcEsat Ic=-500mA,iB=-50mA -0.5 Vv Base-emitter saturation voltage VBEsat fc=-500mA,1B=-50mA -4 Vv Transition frequency ft VceE=-20V,Ic=-50mA,f=100MHz 4100 MHz DEVICE MARKING : MMBT5401LT1=2L 192 193 hre DC CURRENT GAIN Vce COLLECTOR EMITTER VOLTAGE (VOLTS) Typical Characteristics 0.005 0.01 0.3 0.02 0.03 0.05 0.5 0.7 1.0 V, VOLTAGE (VOLTS) MMBT5401LT1 Vce = 1.0V e oe me mmm Vee = 10V 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0K ic COLLECTOR CURRENT (mA) DC Current Gain 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 Is, BASE CURRENT (mA) Collector Saturation Region Vee(sath@ic/le = 10 Vce(sat)@ic/Ip = 10 0 0.1 0.20305 10 203.0 50 10 20 30 50 100 Ic, COLLECTOR CURRENT (mA) "On" Voltages