C106B c106D C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS TO-126 CASE MAXIMUM RATINGS: (T=25C unless otherwise noted) SYMBOL C106B C106D C106M UNITS Peak Repetitive Off-State Voltage Vor, VRRM 200 400 600 V RMS On-State Current (Tc=80C) IT(RMS) 4.0 A Peak Non-Repetitive Surge Current (T j=110C) ltTsmM 20 A |2t Value for Fusing (t=8.3ms) l2t 1.65 A2s Peak Gate Power (Tc=80C) Pom 0.5 Ww Average Gate Power (T=80C) Po(av) 0.1 Ww Peak Forward Gate Current (Tc=80C) IGEM 0.2 A Storage Temperature Tstg -40 to +150 C Junction Temperature ly -40 to +110 C Thermal Resistance jc 30 C/W Thermal Resistance OjA 75 CIW ELECTRICAL CHARACTERISTICS: (T)=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM Rated Vprm, VRRM, RGK=1KQ 10 HA IDRM, IRRM Rated VDRM, VRRM, RGK=1KQ, Ty=110C 100 yA Vm le y=4-0A 22 Vv lot Vak=6.0V, R_=10082 200 uA lot VaK=6.0V, RL=100Q, Ty= -40C 500 pA VoT Vak=6.0V, RL =1002 0.4 0.8 Vv V6T VaK=6.0V, R_=1002, Ty= -40C 0.5 1.0 Vv Iq Vp=12V 3.0 mA Iq Vp=12V, Ty= -40C 6.0 mA ly Vp=12V, Ty=110C 2.0 mA I Vp=12V 5.0 mA I Vp=12V, Ty= 40C 7.0 mA dv/dt Vp= Rated Vopr: RGK=1KQ, Ty=110C 8.0 Vius Central DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B Series are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V to 600V. These devices are designed for applications such as temperature, light and speed control, remote warning and triggering applications. MARKING CODE: FULL PART NUMBER 34 RO (27-April 2004) Central oes C106D Semiconductor Corp. C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS TO-126 CASE - MECHANICAL OUTLINE BACKSIDE 7 LEAD CODE: 1) CATHODE 2) ANODE 3) GATE MARKING CODE: FULL PART NUMBER 1 TO-126 (REV:R3) RO (27-April 2004) 35