BZX 55... SILICON PLANAR ZENER DIODES Silicon Planar Zener Diodes The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages on request. Absolute Maximum Ratings (T,= 25 C) a aq je 3.9 |* min. 27.5 max _ 75 ut 4 f max. 1.90 > Cathode Mark max. 0.520 be. Glass case JEDEC DO-35 Dimensions in mm at |.= 100 mA Symbol Value Unit Zener Current see Table " Characteristics " Power Dissipation at T,,, = 25 C Pret 500") mW Junction Temperature T, 175 C Storage Temperature Range T 4 -55 to + 175 C . Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. Characteristics at T,_, = 25 C Symbol Min. Typ Max Unit Thermal Resistance Ria - : 0.3" K/mWw Junction to Ambient Air Forward Voltage Vv . - 1 Vv *) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. ) BZX 55... SILICON PLANAR ZENER DIODES Temp. coefficient of Zener Voltage [for V,2 t, ry Atl, | T,=25C T,=125C |,at V, TK, Zener Voltage range Dynamic resistance Reverse leakage curren mA V Q mA pA V Se{K 2V4 BZX 2V7 BZX 3V0 BZX 55/C 3 V3 BZX 55/C 3 V6 BZX v9 7V BZxX B8V2 BZX V1 BZX 55/C 10 1 BZX 1 BZX 55/C ... 54 ... 60 ... 66 ... 87 0.1 11 14 fm 4 1 1 127 <800 ml <0.1 BZX 130 144 a 4 BZX 1 153... 171 <i < jl 1 BZX 55/C 180 180 168... 191 <1700 | <8500 0.1 <0.1 <10 BZX 55/C 200 200 188... 212 <2000 | <1 0.1 <0.1 <10 Tested with pulses tp = 20 ms. ) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. *) The BZX55-COV8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode lead to the negative pole. i) SEMTECH ELECTRONICS LTD. Ag ( wholly owned subsidiary of HOMEY TECHNGLOBY LTD. ) BZX 55... SILICON PLANAR ZENER DIODES Breakdown characteristics at T; = constant (pulsed) mA BZX 55... 50 TTT T l F = 25C C2V7 chve C5V6 Civ3 Chv7 C6V8 Ty 40 covs | | C8Vv2 aL PIL | 0 Test current J | / | 5 mA y Piitidt fof Sh poate pthc 0 | 1 A ] 0 | 2 3 4 5 6 7 8 3 10 Vv Breakdown characteristics at T, = constant (pulsed) mA 30 C10 rE 20 10 Test current P 0 0 10 20 30 40V V> SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )