NDT3055L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Features
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter NDT3055L Units
VDSS Drain-Source Voltage 60 V
VGSS Gate-Source Voltage - Continuous ±20 V
IDMaximum Drain Current - Continuous (Note 1a) 4A
- Pulsed 25
PDMaximum Power Dissipation (Note 1a)3W
(Note 1b) 1.3
(Note 1c)1.1
TJ,TSTG Operating and Storage Temperature Range -65 to 150 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W
* Order option J23Z for cropped center drain lead.
Publication Order Number:
NDT3055L/D
4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V,
RDS(ON) = 0.120 Ω @ VGS = 4.5 V.
Low drive requirements allowing operation directly from logic
drivers. VGS(TH) < 2V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
SOIC-16
SuperSOTTM-3 SuperSOTTM-8 SO-8 SOT-223
SuperSOTTM-6
General Description
These logic level N-Channel enhancement mode power
field effect transistors are produced using ON
Semiconductor's proprietary, high cell density, DMOS
technology. This very high density process is
especially tailored to minimize on-state resistance
and provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation modes. These devices are particularly
suited for low voltage applications such as DC motor
control and DC/DC conversion where fast switching,
low in-line power loss, and resistance to transients
are needed.
D
DS
G
D
S
G
G
D
S
D
SOT-223 G
D
S
SOT-223*
(J23Z)
© 1998 Semiconductor Components Industries, LLC.
September-2017, Rev.1
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 V
∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C55 mV/o C
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 1µA
TJ =125°C 50 µA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 11.6 2V
∆VGS(th)/∆TJGate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC-4 mV /oC
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 4 A0.07 0.1 Ω
TJ =125°C 0.125 0.18
VGS = 4.5 V, ID = 3.7 A0.103 0.12
ID(ON) On-State Drain Current VGS = 5 , VDS = 10 V 10 A
gFS Forward Transconductance VDS = 5 V, ID = 4 A 7S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 25, VGS = 0 V,
f = 1.0 MHz 345 pF
Coss Output Capacitance 110 pF
Crss Reverse Transfer Capacitance 30 pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on)Turn - On Delay Time VDD = 25, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω5 20 ns
trTurn - On Rise Time 7.5 20 ns
tD(off) Turn - Off Delay Time 20 50 ns
tfTurn - Off Fall Time 7 20 ns
QgTotal Gate Charge VDS = 40 V, ID = 4 A,
VGS = 10 V 13 20 nC
Qgs Gate-Source Charge 1.7 nC
Qgd Gate-Drain Charge 3.2 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
ISMaximum Continuous Drain-Source Diode Forward Current 2.5 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A (Note 2)0.8 1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is
guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
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a. 42oC/W when mounted on a 1 in2 pad of
2oz Cu.
b. 95oC/W when mounted on a 0.066 in2
pad of 2oz Cu.
c. 110oC/W when mounted on a 0.00123
in2 pad of 2oz Cu.
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation with
Gate-to- Source Voltage.
012345
0
5
10
15
20
25
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V =10V
GS
3.5V
5.0V
4.5V
4.0V
DS
D
6.0V
3.0V
0 5 10 15 20 25
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 4.0V
GS
10V
4.5V
D
6.0V
8.0V
5.0V
R , NORMALIZED
DS(ON)
Figure 6. Body Diode Forward Voltage
Variation with Current and
Temperature.
246810
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(ON)
25°C
I = 2A
D
T = 125°C
A
11.5 22.5 33.5 44.5 5
0
2
4
6
8
10
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 5V
DS
GS
D
T = -55°C
J125°C
25°C
00.2 0.4 0.6 0.8 11.2 1.4
0.0001
0.001
0.01
0.1
1
10
30
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125°C
A
25°C
-55°C
V = 0V
GS
SD
S
-50 -25 025 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 10 V
GS
I = 4.0 A
D
R , NORMALIZED
DS(ON)
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Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics (continued)
0.0001 0.001 0.01 0.1 110 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1 2
R (t) = r(t) * R
R = 110 °C/W
T - T = P * R (t)
A
J
P(pk)
t
1 t
2
θJA
θJA
θJA
θJA
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
0.1 0.3 1 4 10 30 60
10
20
50
100
200
500
1000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
0246810 12 14
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 4A
DV = 10V
DS 30V
40V
0.1 0.2 0.5 1 2 5 10 30 60 100
0.01
0.03
0.1
0.3
1
3
10
50
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
1s
100ms
10s
10ms
RDS(ON) LIMIT
1ms
DC
V = 10V
SINGLE PULSE
R = 110 C/W
T = 25°C
GS
A
θJA o
100us
0.001 0.01 0.1 110 100 300
0
20
40
60
80
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =110°C/W
T = 25°C
θJA
A
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