1. Product profile
1.1 General description
Planar Schottky barrier double diode with an integrated guard ring for stress protection.
Two electrically isolated Schottky barrier diodes, encapsulated in a small SOT143B
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Low forward voltage
Guard-ring protected
Small SMD plastic package
1.3 Applications
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
1.4 Quick reference data
2. Pinning information
BAT74
Schottky barrier double diode
Rev. 03 — 19 April 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
IFforward current - - 200 mA
VRreverse voltage - - 30 V
VFforward voltage IF= 100 mA - - 800 mV
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode (diode 1)
2 cathode (diode 2)
3 anode (diode 2)
4 anode (diode 1)
21
34
006aaa4
34
2
34
1
BAT74_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 19 April 2010 2 of 10
NXP Semiconductors BAT74
Schottky barrier double diode
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Series connection.
[2] If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one
diode is in reverse operation and the other is in forward operation at the same moment, total device current
is max. 200 mA.
Table 3. Ordering information
Type number Package
Name Description Version
BAT74 - plastic surface-mounted package; 4 leads SOT143B
Table 4. Marking codes
Type number Marking code[1]
BAT74 *L4
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
VRreverse voltage - 30 V
IFforward current - 200 mA
IFRM repetitive peak forward
current tp1s; δ≤0.5 - 300 mA
IFSM non-repetitive peak forward
current tp<10ms - 600 mA
Ptot total power dissipation Tamb 25 °C-230mW
Tjjunction temperature - 125 °C
Tamb ambient temperature 65 +125 °C
Tstg storage temperature 65 +150 °C
Double diode operation
VRreverse voltage - 30 V
[1] -60V
IFforward current [2] -110mA
IFRM repetitive peak forward
current tp1s; δ≤0.5 - 200 mA
BAT74_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 19 April 2010 3 of 10
NXP Semiconductors BAT74
Schottky barrier double diode
6. Thermal characteristics
[1] Refer to SOT143B standard mounting conditions.
7. Characteristics
[1] Temperature coefficient of forward voltage 0.6 %/K.
[2] Pulse test: tp= 300 μs; δ=0.02.
[3] When switched from IF= 10 mA to IR=10mA; R
L= 100 Ω; measured at IR=1mA.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 500 K/W
Table 7. Characteristics
Tamb =25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VFforward voltage IF= 0.1 mA - - 240 mV
IF=1mA [1] - - 320 mV
IF= 10 mA - - 400 mV
IF= 30 mA - - 500 mV
IF= 100 mA - - 800 mV
IRreverse current VR=25V [2] --2 μA
Cddiode capacitance VR=1V; f=1MHz --10pF
trr reverse recovery
time [3] --5 ns
BAT74_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 19 April 2010 4 of 10
NXP Semiconductors BAT74
Schottky barrier double diode
(1) Tamb = 125 °C
(2) Tamb =85°C
(3) Tamb =25°C
(1) Tamb = 125 °C
(2) Tamb =85°C
(3) Tamb =25°C
Fig 1. Forward current as a function of forward
voltage; typical values Fig 2. Reverse current as a functio n o f reverse
voltage; typical values
f=1MHz; T
amb =25°C Standard footprint
Fig 3. Diod e capacitance as a function of reverse
voltage; typical values Fig 4. Power derating curve
103
102
101
IF
(mA)
VF (V)
10
1
1.20.80.40
msa892
(3)(2)(1)
(3)(2)(1)
0102030
VR (V)
103
102
101
IR
(μA)
10
1
(1)
(2)
(3)
msa893
0102030
0
5
10
15
V
R
(V)
C
d
(pF)
msa891 msa894
0
100
200
300
Ptot
(mW)
150750 Tamb (°C)
BAT74_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 19 April 2010 5 of 10
NXP Semiconductors BAT74
Schottky barrier double diode
8. Test information
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
(1) IR=1mA
Fig 5. Re verse recovery time test circuit and waveforms
trr
(1)
+ I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+
I
F
×
R
S
R
S
= 50 ΩI
F
D.U.T.
R
i
= 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
Fig 6. Package outline BAT74 (SOT143B)
04-11-16Dimensions in mm
3.0
2.8 1.1
0.9
2.5
2.1
1.4
1.2
1.7
1.9
0.48
0.38
0.15
0.09
0.45
0.15
0.88
0.78
21
34
Table 8. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
BAT74 SOT143B 4 mm pitch, 8 mm tape and reel -215 -235
BAT74_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 19 April 2010 6 of 10
NXP Semiconductors BAT74
Schottky barrier double diode
11. Soldering
Fig 7. Reflow soldering footprint BAT74 (SOT143B)
Fig 8. Wave soldering footprint BAT74 (SOT143B)
solder lands
solder resist
occupied area
solder paste
sot143b_
fr
0.9
0.60.7
3.25
3
0.6
(3×)
0.6
(3×)
0.5
(3×)
0.7
(3×)
1
1.9
2
0.75 0.95
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot143b_
fw
4.6
4.45
1.2
(3×)
1.425
(3×)
1.425
1
1.2
2.2
2.575
Dimensions in mm
BAT74_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 19 April 2010 7 of 10
NXP Semiconductors BAT74
Schottky barrier double diode
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAT74_3 20100419 Product data sheet - BAT74_2
Modifications: The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate .
Section 1.1 “General description: amended
Table 1 “Quick reference data: added
Section 4 “Marking: updated
Section 8 “Test information : added
Figure 5: enhanced
Figure 6: superseded by minimized package outline drawing
Section 10 “Packing information: added
Section 11 “Soldering: added
Section 13 “Legal information: updated
BAT74_2 20010905 Product specification - BAT74_1
BAT74_1 19960319 Product specification - -
BAT74_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 19 April 2010 8 of 10
NXP Semiconductors BAT74
Schottky barrier double diode
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict wit h the short data sheet, th e
full data sheet shall pre va il.
Product specificat ionThe information and data provided in a Product
data sheet shall define the specification of the product as agr eed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
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representations or warrant ies, expressed or implied, as to the accuracy or
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Notwithstanding any damages that customer might incur for any reason
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changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
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NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
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representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applicati ons or customer product
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customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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Export control — This document as well as the item(s) described herein
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
BAT74_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 19 April 2010 9 of 10
NXP Semiconductors BAT74
Schottky barrier double diode
Quick reference data The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BAT74
Schottky barrier double diode
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 April 2010
Document identifier: BAT74_3
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
10 Packing information . . . . . . . . . . . . . . . . . . . . . 5
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
14 Contact information. . . . . . . . . . . . . . . . . . . . . . 9
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10