MITSUBISHI TRANSISTOR MODULES QM75DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-2HB * * * * * IC Collector current .......................... 75A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 (7.5) (7.5) 93 B2 10.5 46.5 B2 E2 13 E2 23 8 30 37 C1 C2 E 1 E2 Tab#110, t=0.5 8 M5 LABEL 10.5 5 23 15 E1 B1 6.5 6.5 C1 E2 23 C2E1 34 12 E1 B1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 1000 V VCEX Collector-emitter voltage VEB=2V 1000 V VCBO Collector-base voltage Emitter open 1000 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 75 A -IC Collector reverse current DC (forward diode current) 75 A PC Collector dissipation TC=25C 500 W IB Base current DC 4 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 750 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter Conditions Charged part to case, AC for 1 minute Main terminal screw M5 -- Mounting torque Mounting screw M6 -- Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N*m 15~20 kg*cm 1.96~2.94 N*m 20~30 kg*cm 250 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1000V, VEB=2V -- -- 2.0 mA ICBO Collector cutoff current VCB=1000V, Emitter open -- -- 2.0 mA IEBO Emitter cutoff current VEB=7V -- -- 50 mA VCE (sat) Collector-emitter saturation voltage -- -- 4.0 V VBE (sat) Base-emitter saturation voltage -- -- 4.0 V -VCEO Collector-emitter reverse voltage -IC=75A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=75A, VCE=4V 750 -- -- -- -- -- 2.5 s Switching time VCC=600V, IC=75A, IB1=150mA, IB2=-1.5A -- -- 15 s -- -- 3.0 s Transistor part (per 1/2 module) -- -- 0.25 C/ W Diode part (per 1/2 module) -- -- 1.2 C/ W Conductive grease applied (per 1/2 module) -- -- 0.13 C/ W IC=75A, IB=100mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 200 DC CURRENT GAIN hFE 120 A IB=400m A m 0 IB=20 80 A IB=100m A IB=40m A IB=20m 40 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 0 7 5 4 3 2 VCE=4.0V Tj=25C 3.8 4.2 BASE-EMITTER VOLTAGE 4.6 5.0 101 7 5 4 3 2 2 3 4 5 7 10 2 2 3 4 VBE(sat) 10 0 7 5 4 3 2 10 -1 VCE(sat) IB=100mA Tj=25C Tj=125C 4 5 7 10 1 VBE (V) 2 3 4 5 7 10 2 2 3 4 COLLECTOR CURRENT IC (A) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 IC=100A 4 3 IC=75A 2 IC=50A 1 Tj=25C Tj=125C 3 4 5 7 10 -22 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 BASE CURRENT IB (A) ton, ts, tf (s) 5 SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 4 5 7 10 1 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 0 Tj=25C Tj=125C COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) 3 2 3.4 VCE=4.0V VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 -1 7 5 4 3 3.0 VCE=10V 10 3 7 5 4 3 2 10 2 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25C 160 10 4 7 5 4 3 2 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 ts tf ton VCC=600V IB1=150mA IB2=-1.5A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) ts, tf (s) SWITCHING TIME COLLECTOR CURRENT IC (A) 200 3 2 ts 10 1 7 5 4 3 2 tf VCC=600V IC=75A IB1=150mA Tj=25C Tj=125C 10 0 7 5 4 3 REVERSE BIAS SAFE OPERATING AREA 3 4 5 7 10 0 2 3 4 5 7 10 1 160 80 40 0 2 3 BASE REVERSE CURRENT -IB2 (A) 400 600 800 1000 VCE (V) DERATING FACTOR OF F. B. S. O. A. 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) DERATING FACTOR (%) 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 SECOND BREAKDOWN AREA 90 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) C S D 0 20 S COLLECTOR CURRENT IC (A) tw=50S 100S COLLECTOR-EMITTER VOLTAGE Zth (j-c) (C/ W) 200 100 1m 10 2 7 5 3 2 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 Tj=125C IB2=-1.5A 120 10 2 7 5 4 3 2 TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 10 1 7 5 4 3 2 10 0 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 Irr VCC=600V 10 1 IB1=0.15A 7 IB2=-1.5A 5 3 2 10 1 Qrr trr (s) 10 2 7 5 3 2 800 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 0 10 0 trr 7 5 3 Tj=25C 2 Tj=125C 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 2.0 Zth (j-c) (C/ W) 1.6 1.2 0.8 0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999