Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders
QM75DY-2HB
•ICCollector current .......................... 75A
•VCEX Collector-emitter voltage ......... 1000V
•hFE DC current gain.............................750
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
108
93
(7.5) (7.5)
12 46.5
φ6.5 23 23 5
13
10.5 34 10.5
C2E1E2C1
B
2
E
2
E
1
B
1
37
30
8815 M5
Tab#110,
t=0.5
6.523
LABEL
C2E1E2
B2
E2
C1
E1
B1
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
1000
1000
1000
7
75
75
500
4
750
–40~+150
–40~+125
2500
1.47~1.96
15~20
1.96~2.94
20~30
250
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=1000V, VEB=2V
VCB=1000V, Emitter open
VEB=7V
IC=75A, IB=100mA
–IC=75A (diode forward voltage)
IC=75A, VCE=4V
VCC=600V, IC=75A, IB1=150mA, IB2=–1.5A
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
2.0
50
4.0
4.0
1.8
—
2.5
15
3.0
0.25
1.2
0.13
MITSUBISHI TRANSISTOR MODULES
QM75DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
Feb.1999
–1
10
–2
10 0
10
200
160
120
80
40
001 2 3 4 5
Tj=25°C
I
B
=400mA
I
B
=200mA
I
B
=20mA
I
B
=40mA
I
B
=100mA
4
10
7
5
4
3
2
3
10
7
5
4
3
2
2
10 45 7 1
10 23457 2
10
VCE=4.0V
Tj=25°C
Tj=125°C
234
0
10
–1
10
7
5
4
3
2
7
5
4
3
3.0 3.4 3.8 4.2 4.6 5.0
VCE=4.0V
Tj=25°C
3
2
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10 45 7 1
10 23457 2
10
VCE(sat)
VBE(sat)
234
Tj=25°C
Tj=125°C
IB=100mA
0
7532753
5
4
3
2
1
44 75324 2
Tj=25°C
Tj=125°C
IC=75A
IC=100A
IC=50A
3
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10 23457 2
10 23457 3
10
2
Tj=25°C
Tj=125°C
tf
ton
ts
VCC=600V
IB1=150mA
IB2=–1.5A
VCE=10V
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)SWITCHING TIME ton, ts, tf (µs)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM75DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
Feb.1999
0
10 1
10
0
10
–3
10 –2
10 –1
10
3
10
2
10
1
10
0
10 0
10 1
10 2
10 3
10
200
160
120
80
40
00 200 400 600 800 1000
Tj=125°C
IB2=–1.5A
1
10
7
5
4
3
2
0
10
7
5
4
33457 0
10 23457 1
10
3
2
23
Tj=25°C
Tj=125°C
ts
tf
VCC=600V
IC=75A
IB1=150mA
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
TC=25°C
100µ
S
DC
1m
S
t
w
=50µ
S
200µ
S
100
90
60
40
20
00 16020 40 60 80 100 120 140
80
10
70
50
30
753275327532
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
0
327532
444
42
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0 0.4 0.8 1.2 1.6 2.0
Tj=25°C
Tj=125°C
NON-REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME ts, tf (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
TIME (s)
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –IC (A)
MITSUBISHI TRANSISTOR MODULES
QM75DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
Feb.1999
0
10
1
10
–3
10
–2
10
–1
10
0
10
0
10
1
10
2
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
–1
10
–1
10
2
10
1
10 75432
0
10 75432
0
800
700
600
500
400
300
200
100
753275327532
2.0
1.6
1.2
0.8
0.4
0
444
23457 75324
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
I
rr
t
rr
Q
rr
T
j
=25°C
T
j
=125°C
V
CC
=600V
I
B1
=0.15A
I
B2
=–1.5A
Irr (A), Qrr (µc)
SURGE COLLECTOR REVERSE CURRENT
–ICSM (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM75DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
trr (µs)
