Publication Number S29JL032H_00 Revision BAmendment 8Issue Date August 31, 2009
S29JL032H
S29JL032 H Cover Sh eet
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Read/Write
Flash Memory
Data Sheet
Notice to Readers: This document states the current technical specifications regarding the Spansion
product(s) described herein. Each product described herein may be designated as Advance Information,
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.
2 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
Notice On Data Sheet Designations
Spansion Inc. issues data sheets with Advance Information or Preliminary designations to advise readers of
product information or intended specifications throughout the product life cycle, including development,
qualification, initial production, and full production. In all cases, however, readers are encouraged to verify
that they have the latest information before finalizing their design. The following descriptions of Spansion data
sheet designations are presented here to highlight their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion Inc. is developing one or more specific
products, but has not committed any design to production. Information presented in a document with this
designation is likely to change, and in some cases, development on the product may discontinue. Spansion
Inc. therefore places the following conditions upon Advance Information content:
“This document contains information on one or more products under development at Spansion Inc.
The information is intended to help you evaluate this product. Do not design in this product without
contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed
product without notice.”
Preliminary
The Preliminary designation indicates that the product development has progressed such that a commitment
to production has taken place. This designation covers several aspects of the product life cycle, including
product qualification, initial production, and the subsequent phases in the manufacturing process that occur
before full production is achieved. Changes to the technical specifications presented in a Preliminary
document should be expected while keeping these aspects of production under consideration. Spansion
places the following conditions upon Preliminary content:
“This document states the current technical specifications regarding the Spansion product(s)
described herein. The Preliminary status of this document indicates that product qualification has been
completed, and that initial production has begun. Due to the phases of the manufacturing process that
require maintaining efficiency and quality, this document may be revised by subsequent versions or
modifications due to changes in technical specifications.”
Combination
Some data sheets contain a combination of products with different designations (Advance Information,
Preliminary, or Full Production). This type of document distinguishes these products and their designations
wherever necessary, typically on the first page, the ordering information page, and pages with the DC
Characteristics table and the AC Erase and Program table (in the table notes). The disclaimer on the first
page refers the reader to the notice on this page.
Full Production (No Designation on Document)
When a product has been in production for a period of time such that no changes or only nominal changes
are expected, the Preliminary designation is removed from the data sheet. Nominal changes may include
those affecting the number of ordering part numbers available, such as the addition or deletion of a speed
option, temperature range, package type, or VIO range. Changes may also include those needed to clarify a
description or to correct a typographical error or incorrect specification. Spansion Inc. applies the following
conditions to documents in this category:
“This document states the current technical specifications regarding the Spansion product(s)
described herein. Spansion Inc. deems the products to have been in sufficient production volume such
that subsequent versions of this document are not expected to change. However, typographical or
specification corrections, or modifications to the valid combinations offered may occur.”
Questions regarding these document designations may be directed to your local sales office.
Publication Number S29JL032H_00 Revision BAmendment 8Issue Date August 31, 2009
Distinctive Characteristics
Architectural Advantages
Simultaneous Read/Write Operations
– Data can be continuously read from one bank while executing
erase/program functions in another bank.
– Zero latency between read and write operations
Multiple Bank Architecture
– Four bank architectures available (refer to Table 8.2 on page 16).
Boot Sectors
– Top and bottom boot sectors in the same device
– Any combination of sectors can be erased
Manufactured on 0.13 µm Process Technology
Secured Silicon Sector: Extra 256 Byte sector
–Customer lockable: One-time programmable only. Once locked,
data cannot be changed
Zero Power Operation
– Sophisticated power management circuits reduce power consumed
during inactive periods to nearly zero.
Compatible with JEDEC standards
– Pinout and software compatible with single-power-supply flash
standard
Package options
48-pin TSOP
Performance Characteristics
High Performance
– Access time as fast as 60 ns
– Program time: 4 µs/word typical using accelerated programming
function
Ultra Low Power Consumption (typical values)
– 2 mA active read current at 1 MHz
– 10 mA active read current at 5 MHz
– 200 nA in standby or automatic sleep mode
Cycling Endurance: 1 million cycles per sector typical
Data Retention: 20 years typical
Software Features
Supports Common Flash Memory Interface (CFI)
Erase Suspend/Erase Resume
– Suspends erase operations to read data from, or program data to, a
sector that is not being erased, then resumes the erase operation.
Data# Polling and Toggle Bits
– Provides a software method of detecting the status of program or
erase cycles
Unlock Bypass Program Command
– Reduces overall programming time when issuing multiple program
command sequences
Hardware Features
Ready/Busy# Output (RY/BY#)
– Hardware method for detecting program or erase cycle completion
Hardware Reset Pin (RESET#)
– Hardware method of resetting the internal state machine to the read
mode
WP#/ACC Input Pin
– Write protect (WP#) function protects the two outermost boot
sectors regardless of sector protect status
– Acceleration (ACC) function accelerates program timing
Sector Protection
– Hardware method to prevent any program or erase operation within
a sector
– Temporary Sector Unprotect allows changing data in protected
sectors in-system
General Description
The S29JL032H is a 32 megabit, 3.0 volt-only flash memory device, organized as 2,097,152 words of 16 bits
each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears
on DQ7–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply,
and can also be programmed in standard EPROM programmers.
The device is available with an access time of 60, 70, or 90 ns and is offered in a 48-pin TSOP package.
Standard control pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control normal
read and write operations, and avoid bus contention issues.
The device requires only a single 3.0 volt power supply for both read and write functions. Internally
generated and regulated voltages are provided for the program and erase operations.
S29JL032H
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Read/Write
Flash Memory
Data Sheet
4 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
Table of Contents
Distinctive Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1. Simultaneous Read/Write Operations with Zero Latency. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
1.1 S29JL032H Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2. Product Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3. Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.1 4 Bank Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.2 2 Bank Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4. Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5. Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6. Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
7. Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
8. Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
8.1 Word/Byte Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
8.2 Requirements for Reading Array Data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8.3 Writing Commands/Command Sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8.4 Simultaneous Read/Write Operations with Zero Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
8.5 Standby Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
8.6 Automatic Sleep Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
8.7 RESET#: Hardware Reset Pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
8.8 Output Disable Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
8.9 Autoselect Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
8.10 Sector/Sector Block Protection and Unprotection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
8.11 Write Protect (WP#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
8.12 Temporary Sector Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
8.13 Secured Silicon Sector Flash Memory Region . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
8.14 Hardware Data Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
9. Common Flash Memory Interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
10. Command Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
10.1 Reading Array Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
10.2 Reset Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
10.3 Autoselect Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
10.4 Enter Secured Silicon Sector/Exit Secured Silicon Sector Command Sequence . . . . . . . . . 32
10.5 Byte/Word Program Command Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
10.6 Chip Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
10.7 Sector Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
10.8 Erase Suspend/Erase Resume Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
11. Write Operation Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
11.1 DQ7: Data# Polling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
11.2 RY/BY#: Ready/Busy#. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
11.3 DQ6: Toggle Bit I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
11.4 DQ2: Toggle Bit II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
11.5 Reading Toggle Bits DQ6/DQ2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
11.6 DQ5: Exceeded Timing Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
11.7 DQ3: Sector Erase Timer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
12. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
13. Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
14. DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
14.1 CMOS Compatible . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
14.2 Zero-Power Flash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
15. Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
August 31, 2009 S29JL032H_00_B8 S29JL032H 5
Data Sheet
16. Key To Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
17. AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
17.1 Read-Only Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
17.2 Hardware Reset (RESET#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
17.3 Word/Byte Configuration (BYTE#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
17.4 Erase and Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
17.5 Temporary Sector Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
17.6 Alternate CE# Controlled Erase and Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . 55
18. Erase and Programming Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
19. TSOP Pin Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
20. Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
20.1 TS 048—48-Pin Standard TSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
21. Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
21.1 Revision A0 (May 21, 2004). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
21.2 Revision A1 (August 5, 2004) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
21.3 Revision A2 (March 10, 2005) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
21.4 Revision B0 (September 21, 2005) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
21.5 Revision B1 (November 28, 2005). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
21.6 Revision B2 (March 13, 2006) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
21.7 Revision B3 (May 19, 2006). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
21.8 Revision B4 (June 7, 2007) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
21.9 Revision B5 (August 10, 2007) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
21.10 Revision B6 (March 7, 2008) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
21.11 Revision B7 (July 7, 2008) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
21.12 Revision B8 (August 31, 2009) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
6 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
Figures
Figure 8.1 Temporary Sector Unprotect Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 8.2 In-System Sector Protect/Unprotect Algorithms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 8.3 Secured Silicon Sector Protect Verify . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 10.1 Program Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 10.2 Erase Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 11.1 Data# Polling Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 11.2 Toggle Bit Algorithm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 12.1 Maximum Negative Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 12.2 Maximum Positive Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 14.1 ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) . . . . . . . . . . . . . . . . 45
Figure 14.2 Typical ICC1 vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Figure 15.1 Test Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 16.1 Input Waveforms and Measurement Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 17.1 Read Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 17.2 Reset Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 17.3 BYTE# Timings for Read Operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 17.4 BYTE# Timings for Write Operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 17.5 Program Operation Timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 17.6 Accelerated Program Timing Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 17.7 Chip/Sector Erase Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 17.8 Back-to-back Read/Write Cycle Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 17.9 Data# Polling Timings (During Embedded Algorithms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 17.10 Toggle Bit Timings (During Embedded Algorithms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 17.11 DQ2 vs. DQ6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 17.12 Temporary Sector Unprotect Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 17.13 Sector/Sector Block Protect and Unprotect Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . 55
Figure 17.14 Alternate CE# Controlled Write (Erase/Program) Operation Timings . . . . . . . . . . . . . . . . . . 56
August 31, 2009 S29JL032H_00_B8 S29JL032H 7
Data Sheet
Tables
Table 8.1 S29JL032H Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 8.2 S29JL032H Bank Architecture. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 8.3 S29JL032H Sector Addresses - Top Boot Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 8.4 S29JL032H Sector Addresses - Bottom Boot Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 8.5 S29JL032H Autoselect Codes (High Voltage Method) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 8.6 S29JL032H Boot Sector/Sector Block Addresses for
Protection/Unprotection (Top Boot Devices) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 8.7 S29JL032H Sector/Sector Block Addresses for
Protection/Unprotection (Bottom Boot Devices) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 8.8 WP#/ACC Modes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 9.1 CFI Query Identification String. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 9.2 System Interface String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 9.3 Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 9.4 Primary Vendor-Specific Extended Query . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 10.1 S29JL032H Command Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 11.1 Write Operation Status. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 15.1 Test Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
8 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
1. Simultaneous Read/Write Operations with Zero Latency
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space
into separate banks (see Table 8.2 on page 16). Sector addresses are fixed, system software can be used to
form user-defined bank groups.
During an Erase/Program operation, any of the non-busy banks may be read from. Note that only two banks
can operate simultaneously. The device can improve overall system performance by allowing a host system
to program or erase in one bank, then immediately and simultaneously read from the other bank, with zero
latency. This releases the system from waiting for the completion of program or erase operations.
The S29JL032H can be organized as both a top and bottom boot sector configuration.
1.1 S29JL032H Features
The Secured Silicon Sector is an extra 256 byte sector capable of being permanently locked by the
customer. The Secured Silicon Customer Indicator Bit (DQ6) is permanently set to 1 if the part has been
locked and is 0 if lockable.
Customers may utilize the Secured Silicon Sector as bonus space, reading and writing like any other flash
sector, or may permanently lock their own code there.
DMS (Data Management Software) allows systems to easily take advantage of the advanced architecture of
the simultaneous read/write product line by allowing removal of EEPROM devices. DMS will also allow the
system software to be simplified, as it will perform all functions necessary to modify data in file structures, as
opposed to single-byte modifications. To write or update a particular piece of data (a phone number or
configuration data, for example), the user only needs to state which piece of data is to be updated, and where
the updated data is located in the system. This is an advantage compared to systems where user-written
software must keep track of the old data location, status, logical to physical translation of the data onto the
Flash memory device (or memory devices), and more. Using DMS, user-written software does not need to
interface with the Flash memory directly. Instead, the user's software accesses the Flash memory by calling
one of only six functions.
The device offers complete compatibility with the JEDEC 42.4 single-power-supply Flash command set
standard. Commands are written to the command register using standard microprocessor write timings.
Reading data out of the device is similar to reading from other Flash or EPROM devices.
The host system can detect whether a program or erase operation is complete by using the device status
bits: RY/BY# pin, DQ7 (Data# Polling) and DQ6/DQ2 (toggle bits). After a program or erase cycle has been
completed, the device automatically returns to the read mode.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations
during power transitions. The hardware sector protection feature disables both program and erase
operations in any combination of the sectors of memory. This can be achieved in-system or via programming
equipment.
The device offers two power-saving features. When addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode. The system can also place the device into the standby
mode. Power consumption is greatly reduced in both modes.
2. Product Selector Guide
Part Number S29JL032H
Speed Option Standard Voltage Range: VCC = 3.0–3.6 V 60
Standard Voltage Range: VCC = 2.7–3.6 V 70 90
Max Access Time (ns), tACC 60 70 90
CE# Access (ns), tCE 60 70 90
OE# Access (ns), tOE 25 30 35
August 31, 2009 S29JL032H_00_B8 S29JL032H 9
Data Sheet
3. Block Diagram
3.1 4 Bank Device
VCC
VSS
Bank 1 Address
Bank 2 Address
A20–A0
RESET#
WE#
CE#
BYTE#
DQ0–DQ15
WP#/ACC
STATE
CONTROL
&
COMMAND
REGISTER
RY/BY#
Bank 1
X-Decoder
OE# BYTE#
DQ15–DQ0
Status
Control
A20–A0
A20–A0
A20–A0A20–A0
DQ15–DQ0
DQ15–DQ0
DQ15–DQ0
DQ15–DQ0
Mux
Mux
Mux
Bank 2
X-Decoder
Y-gate
Bank 3
X-Decoder
Bank 4
X-Decoder
Y-gate
Bank 3 Address
Bank 4 Address
10 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
3.2 2 Bank Device
4. Connection Diagrams
V
CC
V
SS
Upper Bank Address
A20–A0
RESET#
WE#
CE#
BYTE#
DQ15–DQ0
WP#/ACC
STATE
CONTROL
&
COMMAND
REGISTER
RY/BY#
Upper Bank
X-Decoder
Y-Decoder
Latches and Control Logic
OE# BYTE#
DQ15–DQ0
Lower Bank
Y-Decoder
X-Decoder
Latches and
Control Logic
Lower Bank Address
OE# BYTE#
Status
Control
A20–A0
A20–A0
A20–A0A20–A0
DQ15–DQ0 DQ15–DQ0
1
16
2
3
4
5
6
7
8
17
18
19
20
21
22
23
24
9
10
11
12
13
14
15
48
33
47
46
45
44
43
42
41
40
39
38
37
36
35
34
25
32
31
30
29
28
27
26
A15
A18
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
NC
WP#/ACC
RY/BY#
A1
A17
A7
A6
A5
A4
A3
A2
A16
DQ2
BYTE#
V
SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ9
DQ1
DQ8
DQ0
OE#
V
SS
CE#
A0
DQ5
DQ12
DQ4
V
CC
DQ11
DQ3
DQ10
48-Pin Standard TSOP
August 31, 2009 S29JL032H_00_B8 S29JL032H 11
Data Sheet
5. Pin Description
6. Logic Symbol
A20–A0 21 Addresses
DQ14–DQ0 15 Data Inputs/Outputs (x16-only devices)
DQ15/A-1 DQ15 (Data Input/Output, word mode), A-1 (LSB Address Input, byte mode)
CE# Chip Enable
OE# Output Enable
WE# Write Enable
WP#/ACC Hardware Write Protect/Acceleration Pin
RESET# Hardware Reset Pin, Active Low
BYTE# Selects 8-bit or 16-bit mode
RY/BY# Ready/Busy Output
VCC 3.0 volt-only single power supply (see Product Selector Guide on page 8 for
speed options and voltage supply tolerances)
VSS Device Ground
NC Pin Not Connected Internally
21
16 or 8
DQ15–DQ0
(A-1)
A20–A0
CE#
OE#
WE#
RESET#
BYTE#
RY/BY#
WP#/ACC
12 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
7. Ordering Information
The order number (Valid Combination) is formed by the following:
Note
1. Type 0 is standard. Specify others as required; TSOPs can be packed in Types 0 and 3.
2. Operating voltage VCC varies depending on speed option.
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local
Spansion sales office to confirm availability of specific valid combinations and to check on newly released
combinations.
S29JL032H 60 T A I 00 0
Packing Type
0=Tray
3 = 13-inch Tape and Reel
Model Number
01 = Top Boot Device, 4 Banks: 4/12/12/4 Mb
02 = Bottom Boot Device, 4 Banks: 4/12/12/4 Mb
21 = Top Boot Device, 2 Banks: 4/28 Mb
22 = Bottom Boot Device, 2 Banks: 4/28 Mb
31 = Top Boot Device, 2 Banks: 8/24 Mb
32 = Bottom Boot Device, 2 Banks: 8/24 Mb
41 = Top Boot Device, 2 Banks: 16/16 Mb
42 = Bottom Boot Device, 2 Banks: 16/16 Mb
Temperature Range
I = Industrial (–40°C to +85°C)
Package Material Set
A = Standard
F = Pb-free
Package Type
T = Thin Small Outline Package (TSOP) Standard Pinout
Speed Option
60 = 60 ns
70 = 70 ns
90 = 90 ns
Device Family
S29JL032H
3.0 Volt-only, 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) Simultaneous Read/Write Flash Memory
Manufactured on 130 nm process technology
S29JL032H Valid Combinations
Device Family Speed Option
Package, Material, Set and
Temperature Range
Model
Number Packing Type Package Type
S29JL032H
60
70
90
(Note 2)
TA I
TFI
01
0
3
(Note 1)
TS048 TSOP
02
21
22
31
32
41
42
August 31, 2009 S29JL032H_00_B8 S29JL032H 13
Data Sheet
8. Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated through the
internal command register. The command register itself does not occupy any addressable memory location.
The register is a latch used to store the commands, along with the address and data information needed to
execute the command. The contents of the register serve as inputs to the internal state machine. The state
machine outputs dictate the function of the device. Table 8.1 lists the device bus operations, the inputs and
control levels they require, and the resulting output. The following subsections describe each of these
operations in further detail.
Legend
L = Logic Low = VIL
H = Logic High = VIH
VID = 8.5–12.5 V
VHH = 9.0 ± 0.5 V
X = Don’t Care
SA = Sector Address
AIN = Address In
DIN = Data In
DOUT = Data Out
Notes
1. Addresses are A20:A0 in word mode (BYTE# = VIH), A20:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See Sector/Sector Block
Protection and Unprotection on page 22.
3. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, protection on the two outermost boot sectors
depends on whether they were last protected or unprotected using the method described in Sector/Sector Block Protection and
Unprotection on page 22. If WP#/ACC = VHH, all sectors will be unprotected.
8.1 Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the
BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ15–DQ0 are active and controlled by CE#
and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ7–DQ0 are
active and controlled by CE# and OE#. The data I/O pins DQ14–DQ8 are tri-stated, and the DQ15 pin is used
as an input for the LSB (A-1) address function.
Table 8.1 S29JL032H Device Bus Operations
Operation CE# OE# WE# RESET# WP#/ACC
Addresses
(Note 1)
DQ15–DQ8
DQ7–DQ0BYTE# = VIH BYTE# = VIL
Read L L H H L/H AIN DOUT DQ14–DQ8 = High-Z,
DQ15 = A-1
DOUT
Write L H L H (Note 3) AIN DIN DIN
Standby VCC ±
0.3 V XX
VCC ±
0.3 V L/H X High-Z High-Z High-Z
Output Disable L H H H L/H X High-Z High-Z High-Z
Reset X X X L L/H X High-Z High-Z High-Z
Sector Protect
(Note 2) LHLV
ID L/H SA, A6 = L,
A1 = H, A0 = L XXD
IN
Sector Unprotect
(Note 2) LHLV
ID (Note 3) SA, A6 = H,
A1 = H, A0 = L XXD
IN
Temporary Sector
Unprotect XXXV
ID (Note 3) AIN DIN High-Z DIN
14 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
8.2 Requirements for Reading Array Data
To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control and gates array data to the output pins. WE# should
remain at VIH. The BYTE# pin determines whether the device outputs array data in words or bytes.
The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory content occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses
on the device address inputs produce valid data on the device data outputs. Each bank remains enabled for
read access until the command register contents are altered.
Refer to the Read-Only Operations on page 47 for timing specifications and to Figure 17.1 on page 47 for the
timing diagram. ICC1 in DC Characteristics on page 44 represents the active current specification for reading
array data.
8.3 Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines whether the device accepts program data in bytes or
words. Refer to Word/Byte Configuration on page 13 for more information.
The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the
Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. Byte/
Word Program Command Sequence on page 32 has details on programming data to the device using both
standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 8.3 on page 17 and
Table 8.4 on page 19 indicate the address space that each sector occupies. Similarly, a “sector address” is
the address bits required to uniquely select a sector. Command Definitions on page 31 has details on erasing
a sector or the entire chip, or suspending/resuming the erase operation.
The device address space is divided into four banks. A “bank address” is the address bits required to uniquely
select a bank.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. AC
Characteristics on page 47 contains timing specification tables and timing diagrams for write operations.
8.3.1 Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This is one of two functions
provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput at
the factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the
time required for program operations. The system would use a two-cycle program command sequence as
required by the Unlock Bypass mode. Removing VHH from the WP#/ACC pin returns the device to normal
operation. Note that VHH must not be asserted on WP#/ACC for operations other than accelerated
programming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or
unconnected; inconsistent behavior of the device may result. See Write Protect (WP#) on page 24 for related
information.
8.3.2 Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The system
can then read autoselect codes from the internal register (which is separate from the memory array) on
DQ15–DQ0. Standard read cycle timings apply in this mode. Refer to Autoselect Mode on page 21 and
Autoselect Command Sequence on page 32 for more information.
August 31, 2009 S29JL032H_00_B8 S29JL032H 15
Data Sheet
8.4 Simultaneous Read/Write Operations with Zero Latency
This device is capable of reading data from one bank of memory while programming or erasing in the other
bank of memory. An erase operation may also be suspended to read from or program to another location
within the same bank (except the sector being erased). Figure 17.8 on page 52 shows how read and write
cycles may be initiated for simultaneous operation with zero latency. ICC6 and ICC7 in DC Characteristics
on page 44 represent the current specifications for read-while-program and read-while-erase, respectively.
8.5 Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state,
independent of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within
VCC ± 0.3 V, the device will be in the standby mode, but the standby current will be greater. The device
requires standard access time (tCE) for read access when the device is in either of these standby modes,
before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation
is completed.
ICC3 in DC Characteristics on page 44 represents the standby current specification.
8.6 Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are
changed. While in sleep mode, output data is latched and always available to the system. ICC5 in DC
Characteristics on page 44 represents the automatic sleep mode current specification.
8.7 RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the
RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in
progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse.
The device also resets the internal state machine to reading array data. The operation that was interrupted
should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS±0.3 V, the standby current
will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is
asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is
completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the
RESET# pin returns to VIH.
Refer to AC Characteristics on page 47 for RESET# parameters and to Figure 17.2 on page 48 for the timing
diagram.
16 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
8.8 Output Disable Mode
When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high
impedance state.
Table 8.2 S29JL032H Bank Architecture
Device
Model
Number
Bank 1 Bank 2 Bank 3 Bank 4
Megabit Sector Size Megabit Sector Size Megabit Sector Size Megabit Sector Size
01, 02 4 Mbit
Eight
8 Kbyte/
4 Kword,
seven
64 Kbyte/
32 Kword
12 Mbit
Twenty-four
64 Kbyte/
32 Kword
12 Mbit
Twenty-four
64 Kbyte/
32 Kword
4 Mbit Eight 64 Kbyte/
32 Kword
Device
Model
Number
Bank 1 Bank 2
Megabits Sector Size Megabit Sector Size
21, 22 4 Mbit Eight 8 Kbyte/4 Kword,
seven 64 Kbyte/32 Kword 28 Mbit Fifty-six
64 Kbyte/32 Kword
31, 32 8 Mbit Eight 8 Kbyte/4 Kword,
fifteen 64 Kbyte/32 Kword 24 Mbit Forty-eight
64 Kbyte/32 Kword
41, 42 16 Mbit Eight 8 Kbyte/4 Kword,
thirty-one 64 Kbyte/32 Kword 16 Mbit Thirty-two
64 Kbyte/32 Kword
August 31, 2009 S29JL032H_00_B8 S29JL032H 17
Data Sheet
Table 8.3 S29JL032H Sector Addresses - Top Boot Devices (Sheet 1 of 2)
S29JL032H (Model 41)
S29JL032H (Model 31)
S29JL032H (Model 21)
S29JL032H (Model 01)
Sector
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
Bank 2
Bank 2
Bank 2
Bank 4
SA0 000000xxx 64/32 000000h-00FFFFh 000000h-07FFFh
SA1 000001xxx 64/32 010000h-01FFFFh 008000h-0FFFFh
SA2 000010xxx 64/32 020000h-02FFFFh 010000h-17FFFh
SA3 000011xxx 64/32 030000h-03FFFFh 018000h-01FFFFh
SA4 000100xxx 64/32 040000h-04FFFFh 020000h-027FFFh
SA5 000101xxx 64/32 050000h-05FFFFh 028000h-02FFFFh
SA6 000110xxx 64/32 060000h-06FFFFh 030000h-037FFFh
SA7 000111xxx 64/32 070000h-07FFFFh 038000h-03FFFFh
Bank 3
SA8 001000xxx 64/32 080000h-08FFFFh 040000h-047FFFh
SA9 001001xxx 64/32 090000h-09FFFFh 048000h-04FFFFh
SA10 001010xxx 64/32 0A0000h-0AFFFFh 050000h-057FFFh
SA11 001011xxx 64/32 0B0000h-0BFFFFh 058000h-05FFFFh
SA12 001100xxx 64/32 0C0000h-0CFFFFh 060000h-067FFFh
SA13 001101xxx 64/32 0D0000h-0DFFFFh 068000h-06FFFFh
SA14 001110xxx 64/32 0E0000h-0EFFFFh 070000h-077FFFh
SA15 001111xxx 64/32 0F0000h-0FFFFFh 078000h-07FFFFh
SA16 010000xxx 64/32 100000h-10FFFFh 080000h-087FFFh
SA17 010001xxx 64/32 110000h-11FFFFh 088000h-08FFFFh
SA18 010010xxx 64/32 120000h-12FFFFh 090000h-097FFFh
SA19 010011xxx 64/32 130000h-13FFFFh 098000h-09FFFFh
SA20 010100xxx 64/32 140000h-14FFFFh 0A0000h-0A7FFFh
SA21 010101xxx 64/32 150000h-15FFFFh 0A8000h-0AFFFFh
SA22 010110xxx 64/32 160000h-16FFFFh 0B0000h-0B7FFFh
SA23 010111xxx 64/32 170000h-17FFFFh 0B8000h-0BFFFFh
SA24 011000xxx 64/32 180000h-18FFFFh 0C0000h-0C7FFFh
SA25 011001xxx 64/32 190000h-19FFFFh 0C8000h-0CFFFFh
SA26 011010xxx 64/32 1A0000h-1AFFFFh 0D0000h-0D7FFFh
SA27 011011xxx 64/32 1B0000h-1BFFFFh 0D8000h-0DFFFFh
SA28 011100xxx 64/32 1C0000h-1CFFFFh 0E0000h-0E7FFFh
SA29 011101xxx 64/32 1D0000h-1DFFFFh 0E8000h-0EFFFFh
SA30 011110xxx 64/32 1E0000h-1EFFFFh 0F0000h-0F7FFFh
SA31 011111xxx 64/32 1F0000h-1FFFFFh 0F8000h-0FFFFFh
18 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
Bank 1
Bank 2 (cont’d)
Bank 2 (cont’d)
Bank 2
SA32 100000xxx 64/32 200000h-20FFFFh 100000h-107FFFh
SA33 100001xxx 64/32 210000h-21FFFFh 108000h-10FFFFh
SA34 100010xxx 64/32 220000h-22FFFFh 110000h-117FFFh
SA35 100011xxx 64/32 230000h-23FFFFh 118000h-11FFFFh
SA36 100100xxx 64/32 240000h-24FFFFh 120000h-127FFFh
SA37 100101xxx 64/32 250000h-25FFFFh 128000h-12FFFFh
SA38 100110xxx 64/32 260000h-26FFFFh 130000h-137FFFh
SA39 100111xxx 64/32 270000h-27FFFFh 138000h-13FFFFh
SA40 101000xxx 64/32 280000h-28FFFFh 140000h-147FFFh
SA41 101001xxx 64/32 290000h-29FFFFh 148000h-14FFFFh
SA42 101010xxx 64/32 2A0000h-2AFFFFh 150000h-157FFFh
SA43 101011xxx 64/32 2B0000h-2BFFFFh 158000h-15FFFFh
SA44 101100xxx 64/32 2C0000h-2CFFFFh 160000h-167FFFh
SA45 101101xxx 64/32 2D0000h-2DFFFFh 168000h-16FFFFh
SA46 101110xxx 64/32 2E0000h-2EFFFFh 170000h-177FFFh
SA47 101111xxx 64/32 2F0000h-2FFFFFh 178000h-17FFFFh
Bank 1
SA48 110000xxx 64/32 300000h-30FFFFh 180000h-187FFFh
SA49 110001xxx 64/32 310000h-31FFFFh 188000h-18FFFFh
SA50 110010xxx 64/32 320000h-32FFFFh 190000h-197FFFh
SA51 110011xxx 64/32 330000h-33FFFFh 198000h-19FFFFh
SA52 110100xxx 64/32 340000h-34FFFFh 1A0000h-1A7FFFh
SA53 110101xxx 64/32 350000h-35FFFFh 1A8000h-1AFFFFh
SA54 110110xxx 64/32 360000h-36FFFFh 1B0000h-1BFFFFh
SA55 110111xxx 64/32 370000h-37FFFFh 1B8000h-1BFFFFh
Bank 1
Bank 1
SA56 111000xxx 64/32 380000h-38FFFFh 1C0000h-1C7FFFh
SA57 111001xxx 64/32 390000h-39FFFFh 1C8000h-1CFFFFh
SA58 111010xxx 64/32 3A0000h-3AFFFFh 1D0000h-1DFFFFh
SA59 111011xxx 64/32 3B0000h-3BFFFFh 1D8000h-1DFFFFh
SA60 111100xxx 64/32 3C0000h-3CFFFFh 1E0000h-1E7FFFh
SA61 111101xxx 64/32 3D0000h-3DFFFFh 1E8000h-1EFFFFh
SA62 111110xxx 64/32 3E0000h-3EFFFFh 1F0000h-1F7FFFh
SA63 111111000 8/4 3F0000h-3F1FFFh 1F8000h-1F8FFFh
SA64 111111001 8/4 3F2000h-3F3FFFh 1F9000h-1F9FFFh
SA65 111111010 8/4 3F4000h-3F5FFFh 1FA000h-1FAFFFh
SA66 111111011 8/4 3F6000h-3F7FFFh 1FB000h-1FBFFFh
SA67 111111100 8/4 3F8000h-3F9FFFh 1FC000h-1FCFFFh
SA68 111111101 8/4 3FA000h-3FBFFFh 1FD000h-1FDFFFh
SA69 111111110 8/4 3FC000h-3FDFFFh 1FE000h-1FEFFFh
SA70 111111111 8/4 3FE000h-3FFFFFh 1FF000h-1FFFFFh
Table 8.3 S29JL032H Sector Addresses - Top Boot Devices (Sheet 2 of 2)
S29JL032H (Model 41)
S29JL032H (Model 31)
S29JL032H (Model 21)
S29JL032H (Model 01)
Sector
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
August 31, 2009 S29JL032H_00_B8 S29JL032H 19
Data Sheet
Table 8.4 S29JL032H Sector Addresses - Bottom Boot Devices (Sheet 1 of 2)
S29JL032H (Model 42)
S29JL032H (Model 32)
S29JL032H (Model 22)
S29JL032H (Model 02)
Sector
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
Bank 1
Bank 1
Bank 1
Bank 1
SA0 000000000 8/4 000000h-001FFFh 000000h-000FFFh
SA1 000000001 8/4 002000h-003FFFh 001000h-001FFFh
SA2 000000010 8/4 004000h-005FFFh 002000h-002FFFh
SA3 000000011 8/4 006000h-007FFFh 003000h-003FFFh
SA4 000000100 8/4 008000h-009FFFh 004000h-004FFFh
SA5 000000101 8/4 00A000h-00BFFFh 005000h-005FFFh
SA6 000000110 8/4 00C000h-00DFFFh 006000h-006FFFh
SA7 000000111 8/4 00E000h-00FFFFh 007000h-007FFFh
SA8 000001xxx 64/32 010000h-01FFFFh 008000h-00FFFFh
SA9 000010xxx 64/32 020000h-02FFFFh 010000h-017FFFh
SA10 000011xxx 64/32 030000h-03FFFFh 018000h-01FFFFh
SA11 000100xxx 64/32 040000h-04FFFFh 020000h-027FFFh
SA12 000101xxx 64/32 050000h-05FFFFh 028000h-02FFFFh
SA13 000110xxx 64/32 060000h-06FFFFh 030000h-037FFFh
SA14 000111xxx 64/32 070000h-07FFFFh 038000h-03FFFFh
Bank 2
Bank 2
SA15 001000xxx 64/32 080000h-08FFFFh 040000h-047FFFh
SA16 001001xxx 64/32 090000h-09FFFFh 048000h-04FFFFh
SA17 001010xxx 64/32 0A0000h-0AFFFFh 050000h-057FFFh
SA18 001011xxx 64/32 0B0000h-0BFFFFh 058000h-05FFFFh
SA19 001100xxx 64/32 0C0000h-0CFFFFh 060000h-067FFFh
SA20 001101xxx 64/32 0D0000h-0DFFFFh 068000h-06FFFFh
SA21 001110xxx 64/32 0E0000h-0EFFFFh 070000h-077FFFh
SA22 001111xxx 64/32 0F0000h-0FFFFFh 078000h-07FFFFh
Bank 2
SA23 010000xxx 64/32 100000h-10FFFFh 080000h-087FFFh
SA24 010001xxx 64/32 110000h-11FFFFh 088000h-08FFFFh
SA25 010010xxx 64/32 120000h-12FFFFh 090000h-097FFFh
SA26 010011xxx 64/32 130000h-13FFFFh 098000h-09FFFFh
SA27 010100xxx 64/32 140000h-14FFFFh 0A0000h-0A7FFFh
SA28 010101xxx 64/32 150000h-15FFFFh 0A8000h-0AFFFFh
SA29 010110xxx 64/32 160000h-16FFFFh 0B0000h-0B7FFFh
SA30 010111xxx 64/32 170000h-17FFFFh 0B8000h-0BFFFFh
SA31 011000xxx 64/32 180000h-18FFFFh 0C0000h-0C7FFFh
SA32 011001xxx 64/32 190000h-19FFFFh 0C8000h-0CFFFFh
SA33 011010xxx 64/32 1A0000h-1AFFFFh 0D0000h-0D7FFFh
SA34 011011xxx 64/32 1B0000h-1BFFFFh 0D8000h-0DFFFFh
SA35 011100xxx 64/32 1C0000h-1CFFFFh 0E0000h-0E7FFFh
SA36 011101xxx 64/32 1D0000h-1DFFFFh 0E8000h-0EFFFFh
SA37 011110xxx 64/32 1E0000h-1EFFFFh 0F0000h-0F7FFFh
SA38 011111xxx 64/32 1F0000h-1FFFFFh 0F8000h-0FFFFFh
20 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
Bank 2
Bank 2 (cont’d)
Bank 2 (cont’d)
Bank 3
SA39 100000xxx 64/32 200000h-20FFFFh 100000h-107FFFh
SA40 100001xxx 64/32 210000h-21FFFFh 108000h-10FFFFh
SA41 100010xxx 64/32 220000h-22FFFFh 110000h-117FFFh
SA42 100011xxx 64/32 230000h-23FFFFh 118000h-11FFFFh
SA43 100100xxx 64/32 240000h-24FFFFh 120000h-127FFFh
SA44 100101xxx 64/32 250000h-25FFFFh 128000h-12FFFFh
SA45 100110xxx 64/32 260000h-26FFFFh 130000h-137FFFh
SA46 100111xxx 64/32 270000h-27FFFFh 138000h-13FFFFh
SA47 101000xxx 64/32 280000h-28FFFFh 140000h-147FFFh
SA48 101001xxx 64/32 290000h-29FFFFh 148000h-14FFFFh
SA49 101010xxx 64/32 2A0000h-2AFFFFh 150000h-157FFFh
SA50 101011xxx 64/32 2B0000h-2BFFFFh 158000h-15FFFFh
SA51 101100xxx 64/32 2C0000h-2CFFFFh 160000h-167FFFh
SA52 101101xxx 64/32 2D0000h-2DFFFFh 168000h-16FFFFh
SA53 101110xxx 64/32 2E0000h-2EFFFFh 170000h-177FFFh
SA54 110111xxx 64/32 2F0000h-2FFFFFh 178000h-17FFFFh
SA55 111000xxx 64/32 300000h-30FFFFh 180000h-187FFFh
SA56 110001xxx 64/32 310000h-31FFFFh 188000h-18FFFFh
SA57 110010xxx 64/32 320000h-32FFFFh 190000h-197FFFh
SA58 110011xxx 64/32 330000h-33FFFFh 198000h-19FFFFh
SA59 110100xxx 64/32 340000h-34FFFFh 1A0000h-1A7FFFh
SA60 110101xxx 64/32 350000h-35FFFFh 1A8000h-1AFFFFh
SA61 110110xxx 64/32 360000h-36FFFFh 1B0000h-1B7FFFh
SA62 110111xxx 64/32 370000h-37FFFFh 1B8000h-1BFFFFh
Bank 4
SA63 111000xxx 64/32 380000h-38FFFFh 1C0000h-1C7FFFh
SA64 111001xxx 64/32 390000h-39FFFFh 1C8000h-1CFFFFh
SA65 111010xxx 64/32 3A0000h-3AFFFFh 1D0000h-1D7FFFh
SA66 111011xxx 64/32 3B0000h-3BFFFFh 1D8000h-1DFFFFh
SA67 111100xxx 64/32 3C0000h-3CFFFFh 1E0000h-1E7FFFh
SA68 111101xxx 64/32 3D0000h-3DFFFFh 1E8000h-1EFFFFh
SA69 111110xxx 64/32 3E0000h-3EFFFFh 1F0000h-1F7FFFh
SA70 111111xxx 64/32 3F0000h-3F1FFFh 1F8000h-1FFFFFh
Table 8.4 S29JL032H Sector Addresses - Bottom Boot Devices (Sheet 2 of 2)
S29JL032H (Model 42)
S29JL032H (Model 32)
S29JL032H (Model 22)
S29JL032H (Model 02)
Sector
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
August 31, 2009 S29JL032H_00_B8 S29JL032H 21
Data Sheet
8.9 Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to
automatically match a device to be programmed with its corresponding programming algorithm. However, the
autoselect codes can also be accessed in-system through the command register.
When using programming equipment, the autoselect mode requires VID on address pin A9. Address pins
must be as shown in Table 8.5. In addition, when verifying sector protection, the sector address must appear
on the appropriate highest order address bits. Table 8.5 shows the remaining address bits that are don’t care.
When all necessary bits have been set as required, the programming equipment may then read the
corresponding identifier code on DQ7–DQ0. However, the autoselect codes can also be accessed in-system
through the command register, for instances when the S29JL032H is erased or programmed in a system
without access to high voltage on the A9 pin. The command sequence is illustrated in Table 10.1 on page 37.
Note that if a Bank Address (BA) on address bits A20, A19 and A18 is asserted during the third write cycle of
the autoselect command, the host system can read autoselect data from that bank and then immediately read
array data from another bank, without exiting the autoselect mode.
To access the autoselect codes in-system, the host system can issue the autoselect command via the
command register, as shown in Table 10.1 on page 37. This method does not require VID. Refer to
Autoselect Command Sequence on page 32 for more information.
Legend
L = Logic Low = V
IL
H = Logic High = V
IH
BA = Bank Address
SA = Sector Address
X = Don’t care
.
Note
Some current and most future Spansion devices (including future revisions of this device) offer an option for programming and permanently
locking the Secured Silicon Sector at the factory. The Secured Silicon Indicator data changes to 82h if factory locked, 42h if customer locked,
and 02h (not 82h) if non-factory/customer locked.
Table 8.5 S29JL032H Autoselect Codes (High Voltage Method)
Description CE# OE# WE#
A20
to
A12
A11
to
A10 A9
A8
to
A7 A6
A5
to
A4 A3 A2 A1 A0
DQ15 to DQ8 DQ7
to
DQ0
BYTE#
= VIH
BYTE#
= VIL
Manufacturer ID:
Spansion Products LL HBAXV
ID XLXLLLL X X 01h
Device ID
(Models 01, 02)
Read Cycle 1
LL HBAXV
ID X
L
X
LLLH 22h
X
7Eh
Read Cycle 2 L H H H L 22h 0Ah
Read Cycle 3 L H H H H 22h 00h (bottom boot)
01h (top boot)
Device ID
(Models 21, 22) LL HBAXV
ID X L X H X X L 22h X 56h (bottom boot)
55h (top boot)
Device ID
(Models 31, 32) LL HBAXV
ID X L X H X X L 22h X 53h (bottom boot)
50h (top boot)
Device ID
(Models 41, 42) LL HBAXV
ID X L X H X X L 22h X 5Fh (bottom boot)
5Ch (top boot)
Sector Protection
Verification LL HSAXV
ID XLXLLHL X X 01h (protected),
00h (unprotected)
Secured Silicon
Indicator Bit (DQ6,
DQ7)
LL HBAXV
ID XLXLLHH X X
42h (customer locked),
82h (not customer
locked) (See Note)
22 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
8.10 Sector/Sector Block Protection and Unprotection
Note: For the following discussion, the term “sector” applies to both sectors and sector blocks. A sector block
consists of two or more adjacent sectors that are protected or unprotected at the same time (see Table 8.6).
The hardware sector protection feature disables both program and erase operations in any sector. The
hardware sector unprotection feature re-enables both program and erase operations in previously protected
sectors. Sector protection/unprotection can be implemented via two methods.
Table 8.6 S29JL032H Boot Sector/Sector Block Addresses for
Protection/Unprotection (Top Boot Devices)
Sector A20-A12
Sector/
Sector Block Size
SA0 000000XXX 64 Kbytes
SA1-SA3
000001XXX
000010XXX
000011XXX
192 (3X64) Kbytes
SA4-SA7 0001XXXXX 256 (4X64) Kbytes
SA8-SA11 0010XXXXX 256 (4X64) Kbytes
SA12-SA15 0011XXXXX 256 (4X64) Kbytes
SA16-SA19 0100XXXXX 256 (4X64) Kbytes
SA20-SA23 0101XXXXX 256 (4X64) Kbytes
SA24-SA27 0110XXXXX 256 (4X64) Kbytes
SA28-SA31 0111XXXXX 256 (4X64) Kbytes
SA32-SA35 1000XXXXX 256 (4X64) Kbytes
SA36-SA39 1001XXXXX 256 (4X64) Kbytes
SA40-SA43 1010XXXXX 256 (4X64) Kbytes
SA44-SA47 1011XXXXX 256 (4X64) Kbytes
SA48-SA51 1100XXXXX 256 (4X64) Kbytes
SA52-SA55 1101XXXXX 256 (4X64) Kbytes
SA56-SA59 1110XXXXX 256 (4X64) Kbytes
SA60-SA62
111100XXX
111101XXX
111110XXX
192 (3X64) Kbytes
SA63 111111000 8 Kbytes
SA64 111111001 8 Kbytes
SA65 111111010 8 Kbytes
SA66 111111011 8 Kbytes
SA67 111111100 8 Kbytes
SA68 111111101 8 Kbytes
SA69 111111110 8 Kbytes
SA70 111111111 8 Kbytes
August 31, 2009 S29JL032H_00_B8 S29JL032H 23
Data Sheet
Sector protect/Sector Unprotect requires VID on the RESET# pin only, and can be implemented either in-
system or via programming equipment. Figure 8.2 on page 25 shows the algorithms and Figure 17.13
on page 55 shows the timing diagram. For sector unprotect, all unprotected sectors must first be protected
prior to the first sector unprotect write cycle. Note that the sector unprotect algorithm unprotects all sectors in
parallel. All previously protected sectors must be individually re-protected. To change data in protected
sectors efficiently, the temporary sector unprotect function is available. See Temporary Sector Unprotect
on page 54..
The device is shipped with all sectors unprotected. Optional Spansion programming service enable
programming and protecting sectors at the factory prior to shipping the device. Contact your local sales office
for details.
It is possible to determine whether a sector is protected or unprotected. See Autoselect Mode on page 21 for
details.
Table 8.7 S29JL032H Sector/Sector Block Addresses for
Protection/Unprotection (Bottom Boot Devices)
Sector A20-A12
Sector/
Sector Block Size
SA70 111111XXX 64 Kbytes
SA69-SA67
111110XXX
111101XXX
111100XXX
192 (3X64) Kbytes
SA66-SA63 1110XXXXX 256 (4X64) Kbytes
SA62-SA59 1101XXXXX 256 (4X64) Kbytes
SA58-SA55 1100XXXXX 256 (4X64) Kbytes
SA54-SA51 1011XXXXX 256 (4X64) Kbytes
SA50-SA47 1010XXXXX 256 (4X64) Kbytes
SA46-SA43 1001XXXXX 256 (4X64) Kbytes
SA42-SA39 1000XXXXX 256 (4X64) Kbytes
SA38-SA35 0111XXXXX 256 (4X64) Kbytes
SA34-SA31 0110XXXXX 256 (4X64) Kbytes
SA30-SA27 0101XXXXX 256 (4X64) Kbytes
SA26-SA23 0100XXXXX 256 (4X64) Kbytes
SA22-SA19 0011XXXXX 256 (4X64) Kbytes
SA18-SA15 0010XXXXX 256 (4X64) Kbytes
SA14-SA11 0001XXXXX 256 (4X64) Kbytes
SA10-SA8
000011XXX
000010XXX
000001XXX
192 (3X64) Kbytes
SA7 000000111 8 Kbytes
SA6 000000110 8 Kbytes
SA5 000000101 8 Kbytes
SA4 000000100 8 Kbytes
SA3 000000011 8 Kbytes
SA2 000000010 8 Kbytes
SA1 000000001 8 Kbytes
SA0 000000000 8 Kbytes
24 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
8.11 Write Protect (WP#)
The Write Protect function provides a hardware method of protecting certain boot sectors without using VID.
This function is one of two provided by the WP#/ACC pin.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the two
outermost 8 Kbyte boot sectors independently of whether those sectors were protected or unprotected using
the method described in Sector/Sector Block Protection and Unprotection on page 22. The two outermost 8
Kbyte boot sectors are the two sectors containing the lowest addresses in a bottom-boot-configured device,
or the two sectors containing the highest addresses in a top-boot-configured device.
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the two outermost 8K Byte boot
sectors were last set to be protected or unprotected. That is, sector protection or unprotection for these two
sectors depends on whether they were last protected or unprotected using the method described in Sector/
Sector Block Protection and Unprotection on page 22.
Note that the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may
result.
8.12 Temporary Sector Unprotect
(Note: For the following discussion, the term “sector” applies to both sectors and sector blocks. A sector block
consists of two or more adjacent sectors that are protected or unprotected at the same time (see Table 8.6
on page 22 and Table 8.7 on page 23).)
This feature allows temporary unprotection of previously protected sectors to change data in-system. The
Temporary Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly
protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed
from the RESET# pin, all the previously protected sectors are protected again. Figure 8.1 shows the
algorithm, and Figure 17.12 on page 54 shows the timing diagrams, for this feature. If the WP#/ACC pin is at
VIL,
the two outermost boot sectors
will remain protected during the Temporary sector Unprotect mode.
Figure 8.1 Temporary Sector Unprotect Operation
Notes
1. All protected sectors unprotected (If WP#/ACC = VIL, the outermost two boot sectors will remain protected).
2. All previously protected sectors are protected once again.
Table 8.8 WP#/ACC Modes
WP# Input Voltage Device Mode
VIL Disables programming and erasing in the two outermost boot sectors
VIH
Enables programming and erasing in the two outermost boot sectors, dependent on whether they were last
protected or unprotected
VHH Enables accelerated programming (ACC). See Accelerated Program Operation on page 14.
START
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
RESET# = VID
(Note 1)
August 31, 2009 S29JL032H_00_B8 S29JL032H 25
Data Sheet
Figure 8.2 In-System Sector Protect/Unprotect Algorithms
Sector Protect:
Write 60h to sector
address with
A6=0, A3=0, A2=0,
A1=1, A0=0
Set up sector
address
Wait 150 µs
Verify Sector
Protect: Write 40h
to sector address
with
A6=0, A3=0,
A2=0, A1=1, A0=0
Read from
sector address with
A6=0, A3=0, A2=0,
A1=1, A0=0
START
PLSCNT = 1
RESET# = VID
Wait 1 ms
First Write
Cycle = 60h?
Data = 01h?
Remove VID
from RESET#
Write reset
command
Sector Protect
complete
Yes
Yes
No
PLSCNT
= 25?
Yes
Device failed
Increment
PLSCNT
Temporary Sector
Unprotect Mode
No
Sector Unprotect:
Write 60h to sector
address with
A6=1, A3=0, A2=0,
A1=1, A0=0
Set up first sector
address
Wait 15 ms
Verify Sector
Unprotect: Write
40h to sector
address with
A6=1, A3=0, A2=0,
A1=1, A0=0
Read from
sector address with
A6=1, A3=0, A2=0,
A1=1, A0=0
START
PLSCNT = 1
RESET# = VID
Wait 1 ms
Data = 00h?
Last sector
verified?
Remove VID
from RESET#
Write reset
command
Sector Unprotect
complete
Yes
No
PLSCNT
= 1000?
Yes
Device failed
Increment
PLSCNT
Temporary Sector
Unprotect Mode
No All sectors
protected?
Yes
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
Set up
next sector
address
No
Yes
No
Yes
No
No
Yes
No
Sector Protect
Algorithm
Sector Unprotect
Algorithm
First Write
Cycle = 60h?
Protect another
sector?
Reset
PLSCNT = 1
26 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
8.13 Secured Silicon Sector Flash Memory Region
The Secured Silicon Sector feature provides a Flash memory region that enables permanent part
identification through an Electronic Serial Number (ESN). The Secured Silicon Sector is 256 bytes in length,
and is shipped unprotected, allowing customers to utilize that sector in any manner they choose. The
Secured Silicon Customer Indicator Bit (DQ6) is permanently set to 1 if the part has been customer locked
and is 0 if customer lockable. DQ7, alternatively, is set to 0 if the part has been customer locked, and is 1 if
customer-lockable.
Some current and most future Spansion devices (including future revisions of this device) will offer an option
for programming and permanently locking the Secured Silicon Sector at the factory. DQ7 will become the
Secured Silicon Factory Indicator bit, and as such the Secured Silicon Indicator Bit data will change to 82h for
factory locked, 42h for customer locked, and 02h (no longer 82h) for not factory/customer locked.
The system accesses the Secured Silicon through a command sequence (see Enter Secured Silicon Sector/
Exit Secured Silicon Sector Command Sequence on page 32). After the system has written the Enter
Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using the addresses
normally occupied by the boot sectors. This mode of operation continues until the system issues the Exit
Secured Silicon Sector command sequence, or until power is removed from the device. On power-up, or
following a hardware reset, the device reverts to sending commands to the first 256 bytes of Sector 0. Note
that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is
enabled.
8.13.1 Factory Locked: Secured Silicon Sector Programmed and Protected At the
Factory
In a factory locked device, the Secured Silicon Sector is protected when the device is shipped from the
factory. The Secured Silicon Sector cannot be modified in any way. The device is preprogrammed with both a
random number and a secure ESN. The 8-word random number is at addresses 000000h–000007h in word
mode (or 000000h–00000Fh in byte mode). The secure ESN is programmed in the next 8 words at addresses
000008h–00000Fh (or 000010h–00001Fh in byte mode). The device is available preprogrammed with one of
the following:
A random, secure ESN only
Customer code through Spansion programming services
Both a random, secure ESN and customer code through Spansion programming services
Contact an your local sales office for details on using Spansion programming services.
8.13.2 Customer Lockable: Secured Silicon Sector NOT Programmed or Protected
At the Factory
If the security feature is not required, the Secured Silicon Sector can be treated as an additional Flash
memory space. The Secured Silicon Sector can be read any number of times, but can be programmed and
locked only once. Note that the accelerated programming (ACC) and unlock bypass functions are not
available when programming the Secured Silicon Sector.
The Secured Silicon Sector area can be protected using one of the following procedures:
Write the three-cycle Enter Secured Silicon Sector Region command sequence, and then follow the in-
system sector protect algorithm as shown in Figure 8.2 on page 25, except that RESET# may be at either
VIH or VID. This allows in-system protection of the Secured Silicon Sector Region without raising any device
pin to a high voltage. Note that this method is only applicable to the Secured Silicon Sector.
To verify the protect/unprotect status of the Secured Silicon Sector, follow the algorithm shown in
Figure 8.3 on page 27.
Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon Sector
Region command sequence to return to reading and writing the remainder of the array.
The Secured Silicon Sector lock must be used with caution since, once locked, there is no procedure
available for unlocking the Secured Silicon Sector area and none of the bits in the Secured Silicon Sector
memory space can be modified in any way.
August 31, 2009 S29JL032H_00_B8 S29JL032H 27
Data Sheet
Figure 8.3 Secured Silicon Sector Protect Verify
8.14 Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data protection
against inadvertent writes (refer to Table 10.1 on page 37 for command definitions). In addition, the following
hardware data protection measures prevent accidental erasure or programming, which might otherwise be
caused by spurious system level signals during VCC power-up and power-down transitions, or from system
noise.
8.14.1 Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register and all internal program/erase circuits are disabled, and
the device resets to the read mode. Subsequent writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater
than VLKO.
8.14.2 Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
8.14.3 Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a logical one.
8.14.4 Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
Write 60h to
any address
Write 40h to Secure
Silicon Sector address
with A6 = 0,
A1 = 1, A0 = 0
START
RESET# =
VIH or VID
Wait 1 ms
Read from Secure
Silicon Sector address
with A6 = 0,
A1 = 1, A0 = 0
If data = 00h,
Secure Silicon Sector
is unprotected.
If data = 01h,
Secure Silicon Sector
is protected.
Remove VIH or VID
from RESET#
Write reset
command
Secure Silicon Sector
Protect Verify
complete
28 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
9. Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system
can read CFI information at the addresses given in Table 9.1. To terminate reading CFI data, the system
must write the reset command. The CFI Query mode is not accessible when the device is executing an
Embedded Program or embedded Erase algorithm.
The system can also write the CFI query command when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read CFI data at the addresses given in Table 9.1. The
system must write the reset command to reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100. Contact your local sales
office for copies of these documents.
Table 9.1 CFI Query Identification String
Addresses
(Word Mode)
Addresses
(Byte Mode) Data Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h Address for Alternate OEM Extended Table (00h = none exists)
Table 9.2 System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode) Data Description
1Bh 36h 0027h VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch 38h 0036h VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh 3Ah 0000h VPP Min. voltage (00h = no VPP pin present)
1Eh 3Ch 0000h VPP Max. voltage (00h = no VPP pin present)
1Fh 3Eh 0003h Typical timeout per single byte/word write 2N µs
20h 40h 0000h Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h 42h 0009h Typical timeout per individual block erase 2N ms
22h 44h 0000h Typical timeout for full chip erase 2N ms (00h = not supported)
23h 46h 0005h Max. timeout for byte/word write 2N times typical
24h 48h 0000h Max. timeout for buffer write 2N times typical
25h 4Ah 0004h Max. timeout per individual block erase 2N times typical
26h 4Ch 0000h Max. timeout for full chip erase 2N times typical (00h = not supported)
August 31, 2009 S29JL032H_00_B8 S29JL032H 29
Data Sheet
Table 9.3 Device Geometry Definition
Addresses
(Word Mode)
Addresses
(Byte Mode) Data Description
27h 4Eh 0016h Device Size = 2N byte
28h
29h
50h
52h
0002h
0000h Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch 58h 0002h Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
003Eh
0000h
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
30 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
Table 9.4 Primary Vendor-Specific Extended Query
Addresses
(Word Mode)
Addresses
(Byte Mode) Data Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h 86h 0031h Major version number, ASCII (reflects modifications to the silicon)
44h 88h 0033h Minor version number, ASCII (reflects modifications to the CFI table)
45h 8Ah 000Ch
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Silicon Revision Number (Bits 7-2)
46h 8Ch 0002h Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h 8Eh 0001h Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h 90h 0001h Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h 92h 0004h Sector Protect/Unprotect scheme
01 =29F040 mode, 02 = 29F016 mode, 03 = 29F400, 04 = 29LV800 mode
4Ah 94h 00XXh
Number of sectors (excluding Bank 1)
XX = 38 (models 01, 02, 21, 22)
XX = 30 (models 31, 32)
XX = 20 (models 41, 42)
4Bh 96h 0000h Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch 98h 0000h Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh 9Ah 0085h ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Eh 9Ch 0095h ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Fh 9Eh 000Xh Top/Bottom Boot Sector Flag
02h = Bottom Boot Device, 03h = Top Boot Device
50h A0h 0001h Program Suspend
0 = Not supported, 1 = Supported
57h AEh 000Xh
Bank Organization
00 = Data at 4Ah is zero
X = 4 (4 banks, models 01, 02)
X = 2 (2 banks, all other models)
58h B0h 00XXh
Bank 1 Region Information - Number of sectors on Bank 1
XX = 0F (models 01, 02, 21, 22)
XX = 17 (models 31, 32)
XX = 27 (models 41, 42)
59h B2h 00XXh
Bank 2 Region Information - Number of sectors in Bank 2
XX = 18 (models 01, 02)
XX = 38 (models 21, 22)
XX = 30 (models 31, 32)
XX = 20 (models 41, 42)
5Ah B4h 00XXh
Bank 3 Region Information - Number of sectors in Bank 3
XX = 18 (models 01, 02)
XX = 00 (all other models)
5Bh B6h 00XXh
Bank 4 Region Information - Number of sectors in Bank 4
XX = 08 (models 01, 02)
XX = 00 (all other models)
August 31, 2009 S29JL032H_00_B8 S29JL032H 31
Data Sheet
10. Command Definitions
Writing specific address and data commands or sequences into the command register initiates device
operations. Table 10.1 on page 37 defines the valid register command sequences. Writing incorrect address
and data values or writing them in the improper sequence may place the device in an unknown state. A
hardware reset may be required to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens first. Refer to AC Characteristics on page 47 for timing
diagrams.
10.1 Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command, the corresponding bank enters the erase-suspend-
read mode, after which the system can read data from any non-erase-suspended sector within the same
bank. The system can read array data using the standard read timing, except that if it reads at an address
within erase-suspended sectors, the device outputs status data. After completing a programming operation in
the Erase Suspend mode, the system may once again read array data with the same exception. See Erase
Suspend/Erase Resume Commands on page 36 for more information.
The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase operation, or if the bank is in the autoselect mode. See Reset
Command on page 31, for more information.
See also Requirements for Reading Array Data on page 14 for more information. Read-Only Operations
on page 47 provides the read parameters, and Figure 17.1 on page 47 shows the timing diagram.
10.2 Reset Command
Writing the reset command resets the banks to the read or erase-suspend-read mode.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the bank to which the system was writing to the read mode. Once erasure begins,
however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before
programming begins. This resets the bank to which the system was writing to the read mode. If the program
command sequence is written to a bank that is in the Erase Suspend mode, writing the reset command
returns that bank to the erase-suspend-read mode. Once programming begins, however, the device ignores
reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must be written to return to the read mode. If a bank
entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that bank
to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to the
read mode (or erase-suspend-read mode if that bank was in Erase Suspend).
32 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
10.3 Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and device codes,
and determine whether or not a sector is protected. The autoselect command sequence may be written to an
address within a bank that is either in the read or erase-suspend-read mode. The autoselect command may
not be written while the device is actively programming or erasing in another bank.
The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect
mode. The system may read any number of autoselect codes without reinitiating the command sequence.
Table 10.1 on page 37 shows the address and data requirements. To determine sector protection
information, the system must write to the appropriate bank address (BA) and sector address (SA). Table 8.3
on page 17 and Table 8.4 on page 19 show the address range and bank number associated with each
sector.
The system must write the reset command to return to the read mode (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
10.4 Enter Secured Silicon Sector/Exit Secured Silicon Sector Command
Sequence
The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon
Sector command sequence. The device continues to access the Secured Silicon Sector region until the
system issues the four-cycle Exit Secured Silicon Sector command sequence. The Exit Secured Silicon
Sector command sequence returns the device to normal operation. The Secured Silicon Sector is not
accessible when the device is executing an Embedded Program or embedded Erase algorithm. Table 10.1
on page 37 shows the address and data requirements for both command sequences. See also Secured Silicon
Sector Flash Memory Region on page 26 for further information. Note that the ACC function and unlock
bypass modes are not available when the Secured Silicon Sector is enabled.
10.5 Byte/Word Program Command Sequence
The system may program the device by word or byte, depending on the state of the BYTE# pin. Programming
is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles,
followed by the program set-up command. The program address and data are written next, which in turn
initiate the Embedded Program algorithm. The system is not required to provide further controls or timings.
The device automatically provides internally generated program pulses and verifies the programmed cell
margin. Table 10.1 on page 37 shows the address and data requirements for the byte program command
sequence.
When the Embedded Program algorithm is complete, that bank then returns to the read mode and addresses
are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or
RY/BY#. Refer to Write Operation Status on page 38 for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program operation. The program command sequence should be
reinitiated once that bank has returned to the read mode, to ensure data integrity. Note that the Secured
Silicon Sector, autoselect, and CFI functions are unavailable when a program operation is in progress.
Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from
“0” back to a “1.” Attempting to do so may cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6
status bits to indicate the operation was successful. However, a succeeding read will show that the data is still
“0.” Only erase operations can convert a “0” to a “1.”
August 31, 2009 S29JL032H_00_B8 S29JL032H 33
Data Sheet
10.5.1 Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to a bank faster than using the
standard program command sequence. The unlock bypass command sequence is initiated by first writing two
unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. That bank
then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is
required to program in this mode. The first cycle in this sequence contains the unlock bypass program
command, A0h; the second cycle contains the program address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial two unlock cycles required in the standard program
command sequence, resulting in faster total programming time. Table 10.1 on page 37 shows the
requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are
valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command
sequence. (Table 10.1 on page 37).
The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH
on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write
the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the WP#/
ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH for any operation other
than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not be left
floating or unconnected; inconsistent behavior of the device may result.
Figure 10.1 illustrates the algorithm for the program operation. Refer to Erase and Program Operations
on page 50 for parameters, and Figure 17.5 on page 51 for timing diagrams.
Figure 10.1 Program Operation
Note
See Table 10.1 on page 37 for program command sequence.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data? No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
34 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
10.6 Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical erase. The system is not required to provide any
controls or timings during these operations. Table 10.1 on page 37 shows the address and data requirements
for the chip erase command sequence.
When the Embedded Erase algorithm is complete, that bank returns to the read mode and addresses are no
longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/
BY#. Refer to Write Operation Status on page 38 for information on these status bits.
Any commands written during the chip erase operation are ignored. However, note that a hardware reset
immediately terminates the erase operation. If that occurs, the chip erase command sequence should be
reinitiated once that bank has returned to reading array data, to ensure data integrity. Note that the Secured
Silicon Sector, autoselect, and CFI functions are unavailable when an erase operation is in progress.
Figure 10.2 on page 35 illustrates the algorithm for the erase operation. Refer to Erase and Program
Operations on page 50 for parameters, and Figure 17.7 on page 52 for timing diagrams.
10.7 Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed
by the address of the sector to be erased, and the sector erase command. Table 10.1 on page 37 shows the
address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm
automatically programs and verifies the entire sector for an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of 80 µs occurs. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may
be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between
these additional cycles must be less than 80 µs, otherwise erasure may begin. Any sector erase address and
command following the exceeded time-out may or may not be accepted. It is recommended that processor
interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be
re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or
Erase Suspend during the time-out period resets that bank to the read mode. The system must rewrite
the command sequence and any additional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the rising edge of the final WE# or CE# pulse (first rising
edge) in the command sequence.
When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data
from the non-erasing bank. The system can determine the status of the erase operation by reading DQ7,
DQ6, DQ2, or RY/BY# in the erasing bank. Refer to Write Operation Status on page 38 for information on
these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs,
the sector erase command sequence should be reinitiated once that bank has returned to reading array data,
to ensure data integrity. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable
when an erase operation is in progress.
Figure 10.2 on page 35 illustrates the algorithm for the erase operation. Refer to Erase and Program
Operations on page 50 for parameters, and Figure 17.7 on page 52 for timing diagrams.
August 31, 2009 S29JL032H_00_B8 S29JL032H 35
Data Sheet
Figure 10.2 Erase Operation
Notes
1. See Table 10.1 on page 37 for erase command sequence.
2. See the section on DQ3 for information on the sector erase timer.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
36 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
10.8 Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected for erasure. The bank address is required when writing
this command. This command is valid only during the sector erase operation, including the 80 µs time-out
period during the sector erase command sequence. The Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algorithm. The bank address must contain one of the sectors
currently selected for erase.
When the Erase Suspend command is written during the sector erase operation, the device requires a
maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the
erase operation.
After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system
can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all
sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status
information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is
actively erasing or is erase-suspended. Refer to Write Operation Status on page 38 for information on these
status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode.
The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in
the standard Byte Program operation. Refer to Write Operation Status on page 38 for more information.
In the erase-suspend-read mode, the system can also issue the autoselect command sequence. The device
allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in
the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend
mode, and is ready for another valid operation. Refer to Autoselect Mode on page 21 and Autoselect
Command Sequence on page 32 for details.
To resume the sector erase operation, the system must write the Erase Resume command. The bank
address of the erase-suspended bank is required when writing this command. Further writes of the Resume
command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing.
August 31, 2009 S29JL032H_00_B8 S29JL032H 37
Data Sheet
Legend
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A20–A12 uniquely select any sector.
Refer to Table 8.3 on page 17 and Table 8.4 on page 19 for information on sector addresses.
BA = Address of the bank that is being switched to autoselect mode, is in bypass mode, or is being erased. A20–A18 uniquely select a bank.
Notes
1. See Table 8.1 on page 13 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle and the fourth, fifth, and sixth cycle of the autoselect command sequence, all bus cycles are write cycles.
4. Data bits DQ15–DQ8 are don’t care in command sequences, except for RD and PD.
5. Unless otherwise noted, address bits A20–A11 are don’t cares for unlock and command cycles, unless SA or PA is required.
6. No unlock or command cycles required when bank is reading array data.
7. The Reset command is required to return to the read mode (or to the erase-suspend-read mode if previously in Erase Suspend) when a bank is in the autoselect
mode, or if DQ5 goes high (while the bank is providing status information).
8. The fourth cycle of the autoselect command sequence is a read cycle. The system must provide the bank address to obtain the manufacturer ID, device ID, or
Secured Silicon Sector factory protect information. Data bits DQ15–DQ8 are don’t care. While reading the autoselect addresses, the bank address must be the
same until a reset command is given. See Autoselect Command Sequence on page 32 for more information.
9. For models 01, 02, the device ID must be read across the fourth, fifth, and sixth cycles.
Table 10.1 S29JL032H Command Definitions
Command
Sequence
(Note 1)
Cycles
Bus Cycles (Notes 2–5)
First Second Third Fourth Fifth Sixth
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read (Note 6) 1RA RD
Reset (Note 7) 1XXX F0
Autoselect (Note 8)
Manufacturer ID Word 4555 AA 2AA 55 (BA)555 90 (BA)X00 01
Byte AAA 555 (BA)AAA
Device ID (Note 9)
Word
6
555
AA
2AA
55
(BA)555
90
(BA)X01 See
Table
8.5
(BA)X0E See
Table
8.5
(BA)X0F See
Table
8.5
Byte AAA 555 (BA)AAA (BA)X02 (BA)X1C (BA)X1E
Secured Silicon Sector
Factory Protect (Note 10)
Word 4555 AA 2AA 55 (BA)555 90 (BA)X03 82/02
Byte AAA 555 (BA)AAA (BA)X06
Sector/Sector Block
Protect Verify (Note 11)
Word 4555 AA 2AA 55 (BA)555 90 (SA)X02 00/01
Byte AAA 555 (BA)AAA (SA)X04
Enter Secured Silicon Sector
Region
Word 3555 AA 2AA 55 555 88
Byte AAA 555 AAA
Exit Secured Silicon Sector
Region
Word 4555 AA 2AA 55 555 90 XXX 00
Byte AAA 555 AAA
Program Word 4555 AA 2AA 55 555 A0 PA PD
Byte AAA 555 AAA
Unlock Bypass Word 3555 AA 2AA 55 555 20
Byte AAA 555 AAA
Unlock Bypass Program (Note 12) 2 XXX A0 PA PD
Unlock Bypass Reset (Note 13) 2XXX 90 XXX 00
Chip Erase Word 6555 AA 2AA 55 555 80 555 AA 2AA 55 555 10
Byte AAA 555 AAA AAA 555 AAA
Sector Erase Word 6555 AA 2AA 55 555 80 555 AA 2AA 55 SA 30
Byte AAA 555 AAA AAA 555
Erase Suspend (Note 14) 1BA B0
Erase Resume (Note 15) 1BA 30
CFI Query (Note 16) Word 155 98
Byte AA
38 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
10. The data is 42h for customer locked, and 82h for not customer locked. Some current and most future Spansion devices (including future revisions of this device)
will offer an option for programming and permanently locking the Secured Silicon Sector at the factory. The Secured Silicon Indicator data will change to 82h for
factory locked, 42h for customer locked, and 02h (no longer 82h) for not factory/customer locked.
11. The data is 00h for an unprotected sector/sector block and 01h for a protected sector/sector block.
12. The Unlock Bypass command is required prior to the Unlock Bypass Program command.
13. The Unlock Bypass Reset command is required to return to the read mode when the bank is in the unlock bypass mode.
14. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is
valid only during a sector erase operation, and requires the bank address.
15. The Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address.
16. Command is valid when device is ready to read array data or when device is in autoselect mode.
11. Write Operation Status
The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5,
DQ6, and DQ7. Table 11.1 on page 42 and the following subsections describe the function of these bits. DQ7
and DQ6 each offer a method for determining whether a program or erase operation is complete or in
progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether an
Embedded Program or Erase operation is in progress or has been completed.
11.1 DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm
is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising
edge of the final WE# pulse in the command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum
programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system
must provide the program address to read valid status information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to the read
mode.
During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the sectors selected for erasure to read valid status
information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately 100 µs, then the bank returns to the read mode. If not all selected sectors
are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected
sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the
status may not be valid.
When the system detects DQ7 has changed from the complement to true data, it can read valid data at
DQ15–DQ0 (or DQ7–DQ0 for x8-only device) on the following read cycles. Just prior to the completion of an
Embedded Program or Erase operation, DQ7 may change asynchronously with DQ15–DQ8 (DQ7–DQ0 for
x8-only device) while Output Enable (OE#) is asserted low. That is, the device may change from providing
status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid
data, the data outputs on DQ15–DQ0 may be still invalid. Valid data on DQ15–DQ0 (or DQ7–DQ0 for x8-only
device) will appear on successive read cycles.
Table 11.1 on page 42 shows the outputs for Data# Polling on DQ7. Figure 11.1 on page 39 shows the Data#
Polling algorithm. Figure 17.9 on page 53 shows the Data# Polling timing diagram.
August 31, 2009 S29JL032H_00_B8 S29JL032H 39
Data Sheet
Figure 11.1 Data# Polling Algorithm
Notes
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being
erased. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
11.2 RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or one
of the banks is in the erase-suspend-read mode.
Table 11.1 on page 42 shows the outputs for RY/BY#.
11.3 DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase
operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is
complete, DQ6 stops toggling.
DQ7 = Data? Yes
No
No
DQ5 = 1?
No
Yes
Yes
FAIL PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
START
40 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for
approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are
protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-
suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use
DQ7 (see DQ7: Data# Polling on page 38).
If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program
algorithm is complete.
Figure 11.2 Toggle Bit Algorithm
Note
The system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5 changes to “1.” See the
subsections on DQ6 and DQ2 for more information.
START
No
Yes
Yes
DQ5 = 1?
No
Yes
Toggle Bit
= Toggle?
No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Toggle Bit
= Toggle?
Read Byte Twice
(DQ7–DQ0)
Address = VA
Read Byte
(DQ7–DQ0)
Address =VA
Read Byte
(DQ7–DQ0)
Address =VA
August 31, 2009 S29JL032H_00_B8 S29JL032H 41
Data Sheet
11.4 DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that
is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is
valid after the rising edge of the final WE# pulse in the command sequence.
DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure.
(The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the
sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is
actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus,
both status bits are required for sector and mode information. Refer to Table 11.1 on page 42 to compare
outputs for DQ2 and DQ6.
Figure 11.2 on page 40 shows the toggle bit algorithm in flowchart form, and DQ2: Toggle Bit II on page 41
explains the algorithm. See also DQ6: Toggle Bit I on page 39. Figure 17.10 on page 53 shows the toggle bit
timing diagram. Figure 17.11 on page 54 shows the differences between DQ2 and DQ6 in graphical form.
11.5 Reading Toggle Bits DQ6/DQ2
Refer to Figure 11.2 on page 40 for the following discussion. Whenever the system initially begins reading
toggle bit status, it must read DQ15–DQ0 (or DQ7–DQ0 for x8-only device) at least twice in a row to
determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle
bit after the first read. After the second read, the system would compare the new value of the toggle bit with
the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system
can read array data on DQ15–DQ0 (or DQ7–DQ0 for x8-only device) on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as
DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or
erase operation. If it is still toggling, the device did not completed the operation successfully, and the system
must write the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles,
determining the status as described in the previous paragraph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the beginning of the algorithm when it returns to
determine the status of the operation (top of Figure 11.2 on page 40).
11.6 DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully
completed.
The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was previously
programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the timing limit has been exceeded, DQ5 produces a “1.”
Under both these conditions, the system must write the reset command to return to the read mode (or to the
erase-suspend-read mode if a bank was previously in the erase-suspend-program mode).
42 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
11.7 DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors
are selected for erasure, the entire time-out also applies after each additional sector erase command. When
the time-out period is complete, DQ3 switches from a “0” to a “1.” If the time between additional sector erase
commands from the system can be assumed to be less than 80 µs, the system need not monitor DQ3. See
also Sector Erase Command Sequence on page 34.
After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the device will accept additional sector erase commands.
To ensure the command has been accepted, the system software should check the status of DQ3 prior to and
following each subsequent sector erase command. If DQ3 is high on the second status check, the last
command might not have been accepted.
Table 11.1 shows the status of DQ3 relative to the other status bits.
Notes
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the
section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in
progress. The device outputs array data if the system addresses a non-busy bank.
Table 11.1 Write Operation Status
Status
DQ7
(Note 2) DQ6
DQ5
(Note 1) DQ3
DQ2
(Note 2) RY/BY#
Standard
Mode
Embedded Program Algorithm DQ7# Toggle 0 N/A No toggle 0
Embedded Erase Algorithm 0 Toggle 0 1 Toggle 0
Erase
Suspend
Mode
Erase-Suspend-
Read
Erase
Suspended Sector 1 No toggle 0 N/A Toggle 1
Non-Erase
Suspended Sector Data Data Data Data Data 1
Erase-Suspend-Program DQ7# Toggle 0 N/A N/A 0
August 31, 2009 S29JL032H_00_B8 S29JL032H 43
Data Sheet
12. Absolute Maximum Ratings
Notes
1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to –2.0 V for periods of
up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. See Figure 12.1 on page 43. During voltage transitions, input or I/O
pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 12.2 on page 43.
2. Minimum DC input voltage on pins A9, OE#, RESET#, and WP#/ACC is –0.5 V. During voltage transitions, A9, OE#, WP#/ACC, and
RESET# may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 12.1 on page 43. Maximum DC input voltage on pin A9 is
+12.5 V which may overshoot to +14.0 V for periods up to 20 ns. Maximum DC input voltage on WP#/ACC is +9.5 V which may overshoot
to +12.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
4. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is
not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
Figure 12.1 Maximum Negative Overshoot Waveform
Figure 12.2 Maximum Positive Overshoot Waveform
Storage Temperature, Plastic Packages –65°C to +150°C
Ambient Temperature with Power Applied –65°C to +125°C
Voltage with Respect to Ground, VCC (Note 1) –0.5 V to +4.0 V
A9, OE#, and RESET# (Note 2) –0.5 V to +12.5 V
WP#/ACC –0.5 V to +9.5 V
All other pins (Note 1) –0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) 200 mA
20 ns
20 ns
+0.8 V
–0.5 V
20 ns
–2.0 V
20 ns
20 ns
V
CC
+2.0 V
V
CC
+0.5 V
20 ns
2.0 V
44 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
13. Operating Ranges
Industrial (I) Devices
Ambient Temperature (TA) –40°C to +85°C
VCC Supply Voltages
VCC for standard voltage range 2.7 V to 3.6 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
14. DC Characteristics
14.1 CMOS Compatible
Notes
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
Parameter
Symbol Parameter Description Test Conditions Min Typ Max Unit
ILI Input Load Current VIN = VSS to VCC,
VCC = VCC max
±1.0 µA
ILIT A9, OE# and RESET# Input Load Current VCC = VCC max, OE# = VIH; A9 or
OE# or RESET# = 12.5 V 35 µA
ILO Output Leakage Current VOUT = VSS to VCC,
VCC = VCC max, OE# = VIH
±1.0 µA
ILR Reset Leakage Current VCC = VCC max; RESET# = 12.5 V 35 µA
ICC1
VCC Active Read Current
(Notes 1, 2)
CE# = VIL, OE# = VIH,
Byte Mode
5 MHz 10 16
mA
1 MHz 2 4
CE# = VIL, OE# = VIH,
Word Mode
5 MHz 10 16
1 MHz 2 4
ICC2 VCC Active Write Current (Notes 2, 3)CE# = V
IL, OE# = VIH, WE# = VIL 15 30 mA
ICC3 VCC Standby Current (Note 2) CE#, RESET# = VCC ± 0.3 V 0.2 10 µA
ICC4 VCC Reset Current (Note 2) RESET# = VSS ± 0.3 V 0.2 10 µA
ICC5 Automatic Sleep Mode (Notes 2, 4)VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V 0.2 10 µA
ICC6
VCC Active Read-While-Program Current
(Notes 1, 2)CE# = VIL, OE# = VIH
Byte 21 45 mA
Word 21 45
ICC7
VCC Active Read-While-Erase Current
(Notes 1, 2)CE# = VIL, OE# = VIH
Byte 21 45 mA
Word 21 45
ICC8
VCC Active Program-While-Erase-
Suspended Current (Notes 2, 5)CE# = VIL, OE# = VIH 17 35 mA
VIL Input Low Voltage –0.5 0.8 V
VIH Input High Voltage 0.7 x VCC VCC + 0.3 V
VHH
Voltage for WP#/ACC Sector Protect/
Unprotect and Program Acceleration VCC = 3.0 V ± 10% 8.5 9.5 V
VID
Voltage for Autoselect and Temporary Sector
Unprotect VCC = 3.0 V ± 10% 8.5 12.5 V
VOL Output Low Voltage IOL = 2.0 mA, VCC = VCC min 0.45 V
VOH1 Output High Voltage IOH = –2.0 mA, VCC = VCC min 0.85 x VCC V
VOH2 IOH = –100 µA, VCC = VCC min V
CC–0.4
VLKO Low VCC Lock-Out Voltage (Note 5) 1.8 2.0 2.3 V
August 31, 2009 S29JL032H_00_B8 S29JL032H 45
Data Sheet
14.2 Zero-Power Flash
Figure 14.1 ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
Note
Addresses are switching at 1 MHz
Figure 14.2 Typical ICC1 vs. Frequency
Note
T = 25 °C
25
20
15
10
5
0
0 500 1000 1500 2000 2500 3000 3500 4000
Supply Current in mA
Time in ns
10
8
2
0
12345
Frequency in MHz
Supply Current in mA
2.7 V
3.6 V
4
6
12
46 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
15. Test Conditions
Figure 15.1 Test Setup
Note
Diodes are IN3064 or equivalent.
16. Key To Switching Waveforms
Figure 16.1 Input Waveforms and Measurement Levels
Table 15.1 Test Specifications
Test Condition 60 70, 90 Unit
Output Load 1 TTL gate
Output Load Capacitance, CL
(including jig capacitance) 30 100 pF
Input Rise and Fall Times 5 ns
Input Pulse Levels 0.0 or Vcc V
Input timing measurement reference levels 0.5 Vcc V
Output timing measurement reference levels 0.5 Vcc V
2.7 kΩ
CL6.2 kΩ
3.3 V
Device
Under
Tes t
Waveform Inputs Outputs
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted Changing, State Unknown
Does Not Apply Center Line is High Impedance State (High Z)
Vcc
0.0 V
0.5 Vcc 0.5 Vcc OutputMeasurement LevelInput
August 31, 2009 S29JL032H_00_B8 S29JL032H 47
Data Sheet
17. AC Characteristics
17.1 Read-Only Operations
Notes
1. Not 100% tested.
2. See Figure 15.1 on page 46 and Table 15.1 on page 46 for test specifications
3. Measurements performed by placing a 50 ohm termination on the data pin with a bias of VCC/2. The time from OE# high to the data bus
driven to VCC/2 is taken as tDF.
Figure 17.1 Read Operation Timings
Parameter
Description Test Setup
Speed Options
JEDEC Std. 60 70 90 Unit
tAVAV tRC Read Cycle Time (Note 1) Min607090ns
tAVQV tACC Address to Output Delay CE#,
OE# = VIL
Max607090ns
tELQV tCE Chip Enable to Output Delay OE# = VIL Max607090ns
tGLQV tOE Output Enable to Output Delay Max 25 30 35 ns
tEHQZ tDF Chip Enable to Output High Z (Notes 1, 3) Max 16 ns
tGHQZ tDF Output Enable to Output High Z (Notes 1, 3) Max 16 ns
tAXQX tOH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First Min 0 ns
tOEH
Output Enable Hold Time
(Note 1)
Read Min 0 ns
Toggle and
Data# Polling Min 5 10 ns
tOH
tCE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
tRC
tACC
tOEH
tRH
tOE
tRH
0 V
RY/BY#
RESET#
tDF
48 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
17.2 Hardware Reset (RESET#)
Note
Not 100% tested.
Figure 17.2 Reset Timings
Parameter
Description All Speed Options UnitJEDEC Std
tReady
RESET# Pin Low (During Embedded Algorithms) to Read Mode
(See Note) Max 20 µs
tReady
RESET# Pin Low (NOT During Embedded Algorithms) to Read
Mode (See Note) Max 500 ns
tRP RESET# Pulse Width Min 500 ns
tRH Reset High Time Before Read (See Note) Min 50 ns
tRPD RESET# Low to Standby Mode Min 20 µs
tRB RY/BY# Recovery Time Min 0 ns
RESET#
RY/BY#
RY/BY#
t
RP
t
Ready
Reset Timings NOT during Embedded Algorithms
t
Ready
CE#, OE#
t
RH
CE#, OE#
Reset Timings during Embedded Algorithms
RESET#
t
RP
t
RB
August 31, 2009 S29JL032H_00_B8 S29JL032H 49
Data Sheet
17.3 Word/Byte Configuration (BYTE#)
Figure 17.3 BYTE# Timings for Read Operations
Figure 17.4 BYTE# Timings for Write Operations
Note
Refer to the Erase/Program Operations table for tAS and tAH specifications.
Parameter Speed Options
JEDEC Std. Description 60 70 90 Unit
tELFL/tELFH CE# to BYTE# Switching Low or High Max 5 ns
tFLQZ BYTE# Switching Low to Output HIGH Z Max 16 ns
tFHQV BYTE# Switching High to Output Active Max 60 70 90 ns
DQ15
Output
Data Output
(DQ7–DQ0)
CE#
OE#
BYTE#
tELFL
DQ14–DQ0 Data Output
(DQ14–DQ0)
DQ15/A-1 Address
Input
tFLQZ
BYTE#
Switching
from word
to byte
mode
DQ15
Output
Data Output
(DQ7–DQ0)
BYTE#
tELFH
DQ14–DQ0 Data Output
(DQ14–DQ0)
DQ15/A-1 Address
Input
tFHQV
BYTE#
Switching
from byte to
word mode
CE#
WE#
BYTE#
The falling edge of the last WE# signal
tHOLD (tAH)
tSET
(tAS)
50 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
17.4 Erase and Program Operations
Notes
1. Not 100% tested.
2. See Erase and Programming Performance on page 57 for more information.
Parameter
Description
Speed Options
JEDEC Std 60 70 90 Unit
tAVAV tWC Write Cycle Time (Note 1) Min607090ns
tAVWL tAS Address Setup Time Min 0 ns
tASO Address Setup Time to OE# low during toggle bit polling Min 12 ns
tWLAX tAH Address Hold Time Min 35 40 45 ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling Min 0 ns
tDVWH tDS Data Setup Time Min 35 40 45 ns
tWHDX tDH Data Hold Time Min 0 ns
tOEPH Output Enable High during toggle bit polling Min 20 ns
tGHWL tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low) Min 0 ns
tELWL tCS CE# Setup Time Min 0 ns
tWHEH tCH CE# Hold Time Min 0 ns
tWLWH tWP Write Pulse Width Min 25 30 35 ns
tWHDL tWPH Write Pulse Width High Min 25 30 30 ns
tSR/W Latency Between Read and Write Operations Min 0 ns
tWHWH1 tWHWH1 Programming Operation (Note 2) Byte Typ 4 µs
Word Typ 6
tWHWH1 tWHWH1
Accelerated Programming Operation,
Byte or Word (Note 2) Ty p 4 µ s
tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.4 sec
tVCS VCC Setup Time (Note 1) Min 50 µs
tRB Write Recovery Time from RY/BY# Min 0 ns
tBUSY Program/Erase Valid to RY/BY# Delay Max 90 ns
August 31, 2009 S29JL032H_00_B8 S29JL032H 51
Data Sheet
Figure 17.5 Program Operation Timings
Notes
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 17.6 Accelerated Program Timing Diagram
OE#
WE#
CE#
V
CC
Data
Addresses
tDS
tAH
tDH
tWP
PD
tWHWH1
tWC tAS
tWPH
tVCS
555h PA PA
Read Status Data (last two cycles)
A0h
tCS
Status DOUT
Program Command Sequence (last two cycles)
RY/BY#
t
RB
t
BUSY
tCH
PA
WP#/ACC
t
VHH
V
HH
V
IL
or V
IH
V
IL
or V
IH
t
VHH
52 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
Figure 17.7 Chip/Sector Erase Operation Timings
Notes
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on page 38.
2. These waveforms are for the word mode.
Figure 17.8 Back-to-back Read/Write Cycle Timings
OE#
CE#
Addresses
VCC
WE#
Data
2AAh SA
tAH
tWP
tWC tAS
tWPH
555h for chip erase
10 for Chip Erase
30h
tDS
tVCS
tCS
tDH
55h
tCH
In
Progress Complete
tWHWH2
VA
VA
Erase Command Sequence (last two cycles) Read Status Data
RY/BY#
tRB
tBUSY
OE#
CE#
WE#
Addresses
t
OH
Data Valid
In
Valid
In
Valid PA Valid RA
t
WC
t
WPH
t
AH
t
WP
t
DS
t
DH
t
RC
t
CE
Valid
Out
t
OE
t
ACC
t
OEH
t
GHWL
t
DF
Valid
In
CE# or CE2# Controlled Write CyclesWE# Controlled Write Cycle
Valid PA Valid PA
t
CP
t
CPH
t
WC
t
WC
Read Cycle
t
SR/W
August 31, 2009 S29JL032H_00_B8 S29JL032H 53
Data Sheet
Figure 17.9 Data# Polling Timings (During Embedded Algorithms)
Note
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
Figure 17.10 Toggle Bit Timings (During Embedded Algorithms)
Note
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle.
WE#
CE#
OE
High Z
tOE
High Z
DQ7
DQ0–DQ6
RY/BY#
tBUSY
Compleme Tru
Addresses VA
tOEH
tCE
tCH
tOH
VA VA
Status
Complement
Status Tru
Valid Data
Valid Data
tACC
OE#
CE#
WE#
Addresses
tOEH
tDH
tAHT
tASO
tOEPH
tOE
Valid Data
(first read) (second read) (stops toggling)
tCEPH
tAHT
tAS
DQ6/DQ2 Valid Data
Valid
Status
Valid
Status
Valid
Status
RY/BY#
54 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
Figure 17.11 DQ2 vs. DQ6
Note
DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6.
17.5 Temporary Sector Unprotect
Note
Not 100% tested.
Figure 17.12 Temporary Sector Unprotect Timing Diagram
Enter
Erase
Erase
Erase
Enter Erase
Suspend Program
Erase Suspend
Read Erase Suspend
Read
Erase
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Suspend
Program
Resume
Embedded
Erasing
Parameter
Description All Speed OptionsJEDEC Std Unit
tVIDR VID Rise and Fall Time (See Note) Min 500 ns
tVHH VHH Rise and Fall Time (See Note) Min 250 ns
tRSP RESET# Setup Time for Temporary Sector Unprotect Min 4 µs
tRRB
RESET# Hold Time from RY/BY# High for Temporary
Sector Unprotect Min 4 µs
RESET#
tVIDR
VID
VSS, VIL,
or VIH
VID
VSS, VIL,
or VIH
CE#
WE#
RY/BY#
tVIDR
tRSP
Program or Erase Command Sequence
tRRB
August 31, 2009 S29JL032H_00_B8 S29JL032H 55
Data Sheet
Figure 17.13 Sector/Sector Block Protect and Unprotect Timing Diagram
Note
*For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0
17.6 Alternate CE# Controlled Erase and Program Operations
Notes
1. Not 100% tested.
2. See Erase and Programming Performance on page 57 for more information.
Sector Group Protect: 150 µs
Sector Group Unprotect: 15 ms
1 µs
RESET#
SA, A6,
A1, A0
Data
CE#
WE#
OE#
60h 60h 40h
Valid* Valid* Valid*
Status
Sector Group Protect/Unprotect Verify
V
ID
V
IH
Parameter Speed Options
JEDEC Std. Description 60 70 90 Unit
tAVAV tWC Write Cycle Time (Note 1) Min607090ns
tAVWL tAS Address Setup Time Min 0 ns
tELAX tAH Address Hold Time Min 35 40 45 ns
tDVEH tDS Data Setup Time Min 35 40 45 ns
tEHDX tDH Data Hold Time Min 0 ns
tGHEL tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low) Min 0 ns
tWLEL tWS WE# Setup Time Min 0 ns
tEHWH tWH WE# Hold Time Min 0 ns
tELEH tCP CE# Pulse Width Min 25 30 35 ns
tEHEL tCPH CE# Pulse Width High Min 25 30 30 ns
tWHWH1 tWHWH1
Programming Operation
(Note 2)
Byte Typ 4 µs
Word Typ 6
tWHWH1 tWHWH1
Accelerated Programming Operation,
Byte or Word (Note 2) Typ 4 µs
tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.4 sec
56 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
Figure 17.14 Alternate CE# Controlled Write (Erase/Program) Operation Timings
Notes
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Waveforms are for the word mode.
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7# D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
August 31, 2009 S29JL032H_00_B8 S29JL032H 57
Data Sheet
18. Erase and Programming Performance
Notes
1. Typical program and erase times assume the following conditions: 25°C, VCC = 3.0 V, 100,000 cycles; checkerboard data pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster
than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 10.1
on page 37 for further information on command definitions.
6. The device has a minimum cycling endurance of 100,000 cycles per sector.
19. TSOP Pin Capacitance
Notes
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Parameter Typ (Note 1) Max (Note 2) Unit Comments
Sector Erase Time 0.4 5 sec Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time 28 sec
Byte Program Time 4 80 µs
Excludes system level
overhead (Note 5)
Word Program Time 6 100 µs
Accelerated Byte/Word Program Time 4 70 µs
Chip Program Time
(Note 3)
Byte Mode 12.6 50
secWord Mode 12.0 35
Accelerated Mode 10 30
Parameter Symbol Parameter Description Test Setup Typ Max Unit
CIN Input Capacitance VIN = 0 TSOP 6 7.5 pF
COUT Output Capacitance VOUT = 0 TSOP 8.5 12 pF
CIN2 Control Pin Capacitance VIN = 0 TSOP 7.5 9 pF
58 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
20. Physical Dimensions
20.1 TS 048—48-Pin Standard TSOP
6
2
3
4
5
7
8
9
TS/TSR 048
MO-142 (D) DD
48
MIN
0.05
0.95
0.17
0.17
0.10
0.10
18.30
19.80
0.50
0˚
0.08
11.90
0.50 BASIC
MAX
0.15
1.20
0.27
0.16
0.21
8˚
0.20
18.50
12.10
0.70
20.20
0.23
1.05
0.20
1.00
0.22
18.40
20.00
0.60
12.00
NOM
Symbol
Jedec
Package
b1
A2
A1
A
D
L
e
E
D1
b
c1
c
0
R
N
1
NOTES:
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
(DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982)
PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE UP).
PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN), INK OR LASER MARK.
TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS DEFINED AS THE PLANE OF
CONTACT THAT IS MADE WHEN THE PACKAGE LEADS ARE ALLOWED TO REST FREELY ON A FLAT
HORIZONTAL SURFACE.
DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD PROTUSION IS
0.15mm (.0059") PER SIDE.
DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR PROTUSION SHALL BE
0.08 (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX. MATERIAL CONDITION. MINIMUM SPACE
BETWEEN PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 (0.0028").
THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10MM (.0039") AND
0.25MM (0.0098") FROM THE LEAD TIP.
LEAD COPLANARITY SHALL BE WITHIN 0.10mm (0.004") AS MEASURED FROM THE SEATING PLANE.
DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
N
+1
2
N
1
2
N
3
REVERSE PIN OUT (TOP VIEW)
C
e
A1
A2
2X (N/2 TIPS)
0.10
9
SEATING
PLANE
A
SEE DETAIL A
B
B
AB
E
D1
D
2X
2X (N/2 TIPS)
0.25
2X
0.10
0.10
N
5
+1
N
2
4
5
1
N
2
2
STANDARD PIN OUT (TOP VIEW)
SEE DETAIL B
DETAIL A
(c)
θ°
L
0.25MM (0.0098") BSC
C
R
GAUGE PLANE
PARALLEL TO
SEATING PLANE
b
b1
(c)
76
c1
WITH PLATING
BASE METAL
7
0.08MM (0.0031") M C A - B S
SECTION B-B
DETAIL B
X
e/2
X = A OR B
3355 \ 16-038.10c
August 31, 2009 S29JL032H_00_B8 S29JL032H 59
Data Sheet
21. Revision History
21.1 Revision A0 (May 21, 2004)
Initial release.
21.2 Revision A1 (August 5, 2004)
Secured Silicon Sector Flash Memory Region
Reworded how the Secured Silicon Sector area can be protected.
Removed Secured Silicon Sector Protect Verify flowchart.
CMOS Compatible
Updated Output Low Voltage.
Erase and Programming Performance
Updated Word and Byte Mode for the Chip Program Time.
21.3 Revision A2 (March 10, 2005)
Deleted 55 ns speed option
Changed operating voltage (VCC) range for 60ns option
Changed standby current (ICC3, ICC4, ICC5)
Deleted Secured Silicon sector protection functionality with RESET#=VIH method
21.4 Revision B0 (September 21, 2005)
Changed data sheet status from Advance to Preliminary.
21.5 Revision B1 (November 28, 2005)
Removed text or changed text in the following sections.
Distinctive Characteristics
Eliminated sub-bullet under the Secured Silicon Sector information bullet.
General Description
Eliminated text in the S29JL032H Features section.
Device Bus Operations
Added Note and made changes to the S29JL032H Autoselect Codes table.
Eliminated text from the Secured Silicon Sector Flash Memory Region section.
Command Definitions
Modified a note in the S29JL032H Command Definitions table.
DC Characteristics
Modified VOL Parameters.
21.6 Revision B2 (March 13, 2006)
Erase and Programming Performance
Changed chip program time for byte and word modes.
60 S29JL032H S29JL032H_00_B8 August 31, 2009
Data Sheet
21.7 Revision B3 (May 19, 2006)
Changed document status from Preliminary to Full Production.
21.8 Revision B4 (June 7, 2007)
Removed the 7 inch Tape and Reel Packing Type option.
21.9 Revision B5 (August 10, 2007)
DC Characteristics
Changed VLKO minimum, typical, and maximum values.
21.10 Revision B6 (March 7, 2008)
Erase and Programming Performance
Changed the maximum sector erase time from 2 seconds to 5 seconds.
Global
Corrected minor typos
21.11 Revision B7 (July 7, 2008)
Word/Byte Configuration (BYTE#)
Changed tFHQV condition from Min. to Max.
21.12 Revision B8 (August 31, 2009)
Secured Silicon Sector Flash Memory Region
Modified Section
Section Added
Factory Locked: Secured Silicon Sector Programmed and Protected At the Factory
Customer Lockable: Secured Silicon Sector NOT Programmed or Protected
At the Factory
In-System Sector Protect/Unprotect Algorithms
Updated table
August 31, 2009 S29JL032H_00_B8 S29JL032H 61
Data Sheet
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
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the prior authorization by the respective government entity will be required for export of those products.
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The contents of this document are subject to change without notice. This document may contain information on a Spansion product under
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this
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Copyright © 2004-2009 Spansion Inc. All rights reserved. Spansion®, the Spansion logo, MirrorBit®, MirrorBit® Eclipse™, ORNAND™,
EcoRAM™ and combinations thereof, are trademarks and registered trademarks of Spansion LLC in the United States and other countries.
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