P-TQFP-100-4
Semiconductor Group 1 1998-06-15
High-Speed Clock and Data Recovery CDR 3300-00
Preliminary Data Bipolar IC
Type Ordering Code Package
CDR 3300-00 on request P-TQFP-100-4
Features
Data rate from 2.5 to 3.3 Gbit/s
Supply range from – 4.0 V to – 5.0 V
Supply current 350 mA typ.
Input sensitivity 20 mVpp differential (BER = 10–12
)
Loss of signal (LOS) detection
Lock indication
Applications
SH100G-based evaluation chip for CDR-macro
GCDR 3300A for SDH/Sonet/ATM applications
Figure 1 Block Diagram
LOS
Datain
DA, DB
C622
ΣFWD
ERRUPN,
DON
N2V5
ECLK
GND_VCC
SEL
TDA
TDK
Xtal
in
Xtal
out
MR VEE VCC1 VCC2
VF0
CDR 3300-00
Semiconductor Group 2 1998-06-15
Functional Description
CDR 3300-00 has been developed as high speed interface receiving an STM-16
channel and performing a serial to parallel conversion in order to prepare data for further
high level processing at lower frequency.
High speed (2.48832 Gbit/s) NRZ serial data is applied to differential input DATAIN,
DATAINN and a 2.48832 GHz master clock is recovered through a special on-chip
macro cell.
The device demultiplexes the incoming data into 2 bit words which appear at the data
output (DAOUT and DBOUT) and a system clock (C622OUT) is generated at 1/4 of the
master clock frequency (622.08 MHz).
Details of the analog part are described in SH100G application notes as well as the
frequency window detector soft macro and the LOS detector soft macro, both in the core
area.
Data Recovery Characteristics
Bit rate: 2.488320 Gbit/s (ITU Rec. G.707)
Frequency 2.48832 GHz ± 20 ppm
Code: NRZ scrambled, 1 + x6+x
7 (ITU Rec. G.709), STM16 frame
Decision Sensitivity: < 20 mVpp-differential
Phase Margin: > 300 ps, 0.75 UI
Pattern Dependency ITU test sequence, CID-pattern, ITU G.958
different PRBS pattern causes no additional penalty
Power Supply Immunity 100 mVpp, f< 1 MHz
CDR 3300-00
Semiconductor Group 3 1998-06-15
Clock Recovery Characteristics
The clock recovery function shall be able to recover a 2.488320 GHz clock from an input
data stream as previously specified with the possibility of missing transitions up to
72 pulse periods. The input stream could be wander and jitter affected as specified
below.
Input Jitter an Wander Tolerance (ITU Rec. G.825)
Figure 2 Lower Limit of Maximum Tolerable Jitter and Wander
CDR 3300-00
Semiconductor Group 4 1998-06-15
Jitter Transfer Function
Jitter Transfer of CDR 3300-00
Figure 3 Jitter Transfer Function
0.05
0
2MHz Frequency
H/dB
5MHz 20MHz
0.5
20dB/dec
CDR 3300-00
Semiconductor Group 5 1998-06-15
Table 1 Pin Assignment
Protection measures have to be provided because not all pins are ESD protected.
#) no ESD protection
$) ESD protection related to VEE only
Pin Signal Name I/O Type DC-Range AC-level
(within DC
range)
Term. Description
1 VTTL pos. power sup, not used,
GND = 0 V
2NC
3 XTALINN not used (inverted
XTALIN)
4MR I VCC, open static open master reset, VCC active
5NC
6NC
7 VCC2 power supply, GND = 0 V
8 VCC2 power supply, GND = 0 V
9NC
10 NC
11 XTALOUTN I$ analog VCC 1 V, typ 250 mVpp typ none inv. output crystal osc.
(E. Follower)
12 XTALIN $ analog 1 V...0 V buffer input crystal oscill.
13 VEE 4.95 V…– 4.05 V neg. power supply
14 LOS O# CML 0.7 V…+ 5 V 1 mA ± 25% ext. R Output loss of signal
detector
15 ERR O# CML 0.7 V…+ 5 V 1 mA ± 25% ext. R Output ERR detector
16 CKNNC0 O CML 1 V…3 V 8 mA ± 25% ext. R not used open collector
17 CKN0 O CML 1 V…3 V 8 mA ± 25% ext. R not used open collector
18 VCC2 power supply, GND = 0 V
19 VCC2 power supply, GND = 0 V
20 NC
21 NC
22 NC
23 TDK analog VEE...VCC Iout = 100 µA,
typ temperature diode cathode
24 TDA analog VEE...VCC Iin= 100 µA, typ temperature diode anode
25 VTTL pos. power sup, not used,
GND = 0 V
26 NC
27 NC
CDR 3300-00
Semiconductor Group 6 1998-06-15
28 NC
29 VCC1 power supply, GND = 0 V
30 VCC1 power supply, GND = 0 V
31 NC
32 NC
33 NC
34 VEE 4.95 V…– 4.05 V neg. power supply
35 VEE 4.95 V…– 4.05 V neg. power supply
36 NC
37 NC
38 VCC1 power supply, GND = 0 V
39 NC
40 NC
41 VCC2 power supply, GND = 0 V
42 VCC2 power supply, GND = 0 V
43 NC
44 NC
45 NC
46 VCC1 power supply, GND = 0 V
47 VCC1 power supply, GND = 0 V
48 NC
49 NC
50 NC
51 VTTL pos. power sup, not used,
GND = 0 V
52 NC
53 NC
54 ECLK I ECL100k VCC –2V…VCC 400 mVpp typ ext. clock 2.5 GHz input, only
for test
55 ECLKN I ECL100k VCC –2V…VCC 400 mVpp typ ext. clock 2.5 GHz input inv.,
only for test
56 N2V5 2.5 V typ, 15 mA neg. power supply VCO
Table 1 Pin Assignment (cont’d)
Protection measures have to be provided because not all pins are ESD protected.
#) no ESD protection
$) ESD protection related to VEE only
Pin Signal Name I/O Type DC-Range AC-level
(within DC
range)
Term. Description
CDR 3300-00
Semiconductor Group 7 1998-06-15
57 VCC2 power supply, GND = 0 V
58 VCC2 power supply, GND = 0 V
59 DATAIN I# analog 0.6 V…+ 0.25 V 20…500 mVpp int. 50
to
VCCZ1
RF data input 2500 Mbit/s
60 VCCZ1 power supply VCO,
GND = 0 V
61 DATAINN I# analog 0.6 V…+ 0.25 V 20…500 mVpp int. 50
to
VCCZ1
RF data input inv.
2500 Mbit/s
62 VCCZ2 power supply VCO,
GND = 0 V
63 VEE 4.95 V…– 4.05 V neg. power supply
64 VF0 I analog VEE…VCC, 6 mA 2.5 V…
2.0 V typ VCO control input,
integrator output
65 UPN O CML 1 V…3 V 1 mA ± 25% int.
800 inverted PD/FD output UP
66 DON O CML 1 V…3 V 1 mA ± 25% int.
800 inverted PD/FD output
down
67 VBB O$ analog Iout < 100 µA Reference voltage – 1.3 V
68 VCC2 power supply, GND = 0 V
69 VCC2 power supply, GND = 0 V
70 SEL I ECK100k active H static enable ext. clock 2.5 GHz
input, P.D.
71 NC
72 NC
73 NC
74 NC
75 VTTL pos. power supply, not
used
76 DAOUT O CML 1 V 3 V 8 mA ± 25% int 100 Data output 1244 Mbit/s
77 DAOUTN O CML 1 V 3 V 8 mA ± 25% int 100 Data output 1244 Mbit/s
inv.
78 DBOUT O CML 1 V 3 V 8 mA ± 25% int 100 Data output 1244 Mbit/s
79 VCC1 power supply, GND = 0 V
Table 1 Pin Assignment (cont’d)
Protection measures have to be provided because not all pins are ESD protected.
#) no ESD protection
$) ESD protection related to VEE only
Pin Signal Name I/O Type DC-Range AC-level
(within DC
range)
Term. Description
CDR 3300-00
Semiconductor Group 8 1998-06-15
80 VCC1 power supply, GND = 0 V
81 DBOUTN O CML 1 V 3 V 8 mA ± 25% int 100 Data output 1244 Mbit/s
inv.
82 C622OUT O CML 1 V 3 V 8 mA ± 25% int 100 Clock output 622 MHz
83 C622OUTN O CML 1 V 3 V 8 mA ± 25% int 100 Clock output 622 MHz inv.
84 VEE 4.95 V…– 4.05 V neg. power supply
85 VEE 4.95 V…– 4.05 V neg. power supply
86 SC622OUT O ECL 1 V 3 V ext. R Clock output 622 Mbit/s
87 SC622OUTN O ECL 1 V 3 V ext. R Clock output 622 Mbit/s
inv.
88 VCC1 power supply, GND = 0 V
89 NC
90 NC
91 VCC2 power supply, GND = 0 V
92 VCC2 power supply, GND = 0 V
93 NC
94 NC
95 NC
96 VCC1 power supply, GND = 0 V
97 VCC1 power supply, GND = 0 V
98 NC
99 NC
100 NC
Table 1 Pin Assignment (cont’d)
Protection measures have to be provided because not all pins are ESD protected.
#) no ESD protection
$) ESD protection related to VEE only
Pin Signal Name I/O Type DC-Range AC-level
(within DC
range)
Term. Description
CDR 3300-00
Semiconductor Group 9 1998-06-15
Package Outlines
The package is a Thermal-Plastic-Quad-Flat-Pack with 100 pins, P-TQFP-100-4 and
includes a heat-slug in order to attach an additional heatsink.
The heat-slug is connected to the negative power supply.
For the heat sink attach no soldering procedure is allowed, glueing only.
Thermal Resistance RthJC = 4 K/W, RthJA = 36 K/W
P-TQFP-100-4
(Plastic Thin Quad Flat Package)
GPP09027
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”. Dimensions in mm
SMD = Surface Mounted Device