1
SEMICONDUCTORS
SUMMARY
V(BR)DSS = - 100V : RDS(on)= 1 ; ID= - 0.7A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
•Low on-resistance
•Fast switching speed
•Low threshold
•Low gate drive
•SOT23 package
APPLICATIONS
•DC-DC Converters
•Power Management functions
•Disconnect switches
•Motor control
DEVICE MARKING
•7P1
ZXMP10A13F
ISSUE 1 - MARCH 2005
100V P-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE REEL
SIZE TAPE
WIDTH QUANTITY
PER REEL
ZXMP10A13FTA 7” 8mm 3000 units
ZXMP10A13FTC 13” 8mm 10000units
ORDERING INFORMATION PINOUT
SOT23
ZXMP10A13F
SEMICONDUCTORS
ISSUE 1 - MARCH 2005
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PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R⍜JA 200 °C/W
Junction to Ambient (b) R⍜JA 155 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ5 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current @ VGS=10V; TA=25°C (b)
@VGS=10V; TA=70°C (b)
@V
GS=10V; TA=25°C (a)
ID-0.7
-0.5
-0.6
A
A
A
Pulsed Drain Current (c) IDM -3.1 A
Continuous Source Current (Body Diode) (b) IS-1.1 A
Pulsed Source Current (Body Diode) (c) ISM -3.1 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor PD625
5mW
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor PD806
6.4 mW
mW/°C
Operating and Storage Temperature Range Tj,T
stg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
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CHARACTERISTICS
ZXMP10A13F
SEMICONDUCTORS
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PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -100 V ID= -250␮A, VGS=0V
Zero Gate Voltage Drain Current IDSS -1.0 ␮AV
DS= -100V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=±20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -2.0 -4.0 V ID= -250␮A, VDS=VGS
Static Drain-Source On-State
Resistance (1) RDS(on) 1
1.45
⍀
⍀
VGS= -10V, ID= -0.6A
VGS= -6V, ID= -0.5A
Forward Transconductance (1)(3) gfs 1.2 S VDS= -15V, ID= -0.6A
DYNAMIC (3)
Input Capacitance Ciss 141 pF VDS= -50V, VGS=0V
f=1MHz
Output Capacitance Coss 13.1 pF
Reverse Transfer Capacitance Crss 10.8 pF
SWITCHING (2) (3)
Turn-On Delay Time td(on) 1.6 ns
VDD= -50V, ID= -1A
RG≅6.0⍀,V
GS= -10V
Rise Time tr2.1 ns
Turn-Off Delay Time td(off) 5.9 ns
Fall Time tf3.3 ns
Gate Charge Qg1.8 nC VDS= -50V, VGS= -5V
ID= -0.6A
Total Gate Charge Qg3.5 nC VDS= -50V, VGS= -10V
ID= -0.6A
Gate-Source Charge Qgs 0.6 nC
Gate-Drain Charge Qgd 1.6 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.85 -0.95 V Tj=25°C, IS= -0.75A,
VGS=0V
Reverse Recovery Time (3) trr 29 ns Tj=25°C, IS= -0.9A,
di/dt=100A/␮s
Reverse Recovery Charge (3) Qrr 31 nC
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ300ms; duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP10A13F
SEMICONDUCTORS
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TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
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ZXMP10A13F
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Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
DIM MILLIMETRES INCHES DIM MILLIMETRES INCHES
MIN MAX MIN MAX MIN MAX MIN MAX
A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
Cᎏ1.10 ᎏ0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM
G 1.90 NOM 0.075 NOM ⍜10⬚TYP 10⬚TYP
PACKAGE DIMENSIONS
PACKAGE OUTLINE PAD LAYOUT
Controlling dimensions are in millimetres. Approximate conversions are given in inches