IRLL014N
HEXFET® Power MOSFET
S
D
G
VDSS = 55V
RDS(on) = 0.14Ω
ID = 2.0A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
1/25/99
Description
lSurface Mount
lAdvanced Process Technology
lUltra Low On-Resistance
lDynamic dv/dt Rating
lFast Switching
lFully Avalanche Rated
SOT-223
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Parameter Typ. Max. Units
RθJA Junction-to-Amb. (PCB Mount, steady state)* 90 12 0
RθJA Junction-to-Amb. (PCB Mount, steady state)** 50 60
Thermal Resistance
°C/W
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 2.8
ID @ TA = 25°C Continuous Drain Current, V GS @ 10V* 2.0
ID @ TA = 70°C Continuous Drain Current, V GS @ 10V* 1.6
IDM Pulsed Drain Current 16
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy32 mJ
IAR Avalanche Current 2.0 A
EAR Repetitive Avalanche Energy* 0.1 m J
dv/dt Peak Diode Recovery dv/dt 7.2 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
A
PD- 91499B
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Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 –– – –– – V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.14 VGS = 10V, ID = 2.0A
––– ––– 0.20 ΩVGS = 5.0V, ID = 1.2A
––– ––– 0.28 VGS = 4.0V, ID = 1.0A
VGS(th) Gate Threshold Voltage 1.0 ––– 2 .0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 2.3 ––– ––– S VDS = 25V, I D = 1.0A
––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– –– – 100 nA VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
QgTotal Gate Charge –– – 9.5 14 ID = 2.0A
Qgs Gate-to-Source Charge ––– 1.1 1. 7 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– 3.0 4. 4 VGS = 10V, See Fig. 6 and 9
td(on) Turn-On Delay Time ––– 5.1 ––– VDD = 28V
trRise Time ––– 4.9 ––– ns ID = 2.0A
td(off) Turn-Off Delay Time ––– 14 ––– RG = 6.0 Ω
tfFall Time ––– 2.9 ––– RD = 14Ω, See Fig. 10
Ciss Input Capacitance ––– 230 ––– VGS = 0V
Coss Output Capacitance ––– 66 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 30 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) ISD ≤ 2.0A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
VDD = 25V, starting TJ = 25°C, L = 4.0mH
RG = 25Ω, IAS = 4.0A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1 .0 V TJ = 25°C, IS = 2.0A, VGS = 0V
trr Reverse Recovery Time ––– 41 61 ns TJ = 25°C, I F = 2.0A
Qrr Reverse RecoveryCharge ––– 73 110 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
––– –––
––– ––– 16
1.3 A
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Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics,
1
10
100
0.1 1 10 100
20µs PULS E W ID TH
T = 2 5° C
A
J
DS
V , Dra in -to -So u rc e V o lt ag e (V)
3.0V
VGS
T OP 15 V
10V
7.0 V
5.5 V
4.5 V
4.0 V
3.5 V
BOT TOM 3.0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10 100
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A )
20µs PULSE WIDTH
T = 15 0°C
J
3.0V
V GS
TOP 15V
1 0V
7 .0V
5 .5V
4 .5V
4 .0V
3 .5V
BOTTOM 3.0V
1
10
100
3.0 4.0 5.0 6.0 7.0
T = 25°C T = 150°C
J
J
GS
V , G ate -to -S o urce V oltag e (V)
D
I , D ra in-to -S o urce Cu rren t (A )
A
V = 25V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , J u nc tion T em p erat ure (°C )
R , Dra in-to -So u rc e O n Re s is ta nc e
DS(on)
(Normalized)
V = 1 0V
GS
A
I = 2 . 0 A
D
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
100
200
300
400
1 10 100
C , Capacitance (pF)
DS
V , Dra in- to -S o u rc e Vo lt a
g
e
(
V
)
A
V = 0V, f = 1 M Hz
C = C + C , C S HO RT E D
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 3 6 9 12 15
Q , T ota l Gate Ch ar
g
e
(
nC
)
G
V , Gate - to-Sou r ce V o lta ge (V)
GS
A
FOR TEST CIRCUIT
SE E F IG U RE 9
I = 2 . 0 A V = 4 4V
V = 2 8V
D
DS
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Sourc e-to-Drain Voltage (V)
I , Rev e rs e D ra in Cu rre nt ( A )
SD
SD
A
0.1
1
10
100
1 10 100
V , Dra in- to -S o u r ce Vo lta
g
e
(
V
)
DS
I , Dra in C u rr ent ( A )
O P ER A T IO N IN T H IS A R EA L IM IT E D
B Y R
D
DS(on)
T = 2 5 °C
T = 1 5 0° C
Sin
g
le Pul s e
10µs
100µs
1ms
10ms
A
A
J
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Q
G
Q
GS
Q
GD
V
G
Charge
+
-
VDS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
10V
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t , Rectangular Pulse Duration (sec)
1
D = 0.50
0.01
0.02
0.05
0.10
0.20
SIN GLE P UL S E
(THE RMAL RES PO NSE)
A
Therm al R esponse (Z )
thJA
P
t
2
1
t
DM
N ote s:
1 . D u ty facto r D = t / t
2. P e ak T = P x Z + T
12
JDM thJA A
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Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
0
20
40
60
80
25 50 75 100 125 150
J
E , S ingle P ulse Av alanc he E nergy (m J )
AS
A
Startin
g
T , Junction T em perature
(
°C
)
V = 25 V
I
T O P 1 .8 A
3 .2 A
B O TT OM 4.0A
DD
D
Fig 12a. Unclamped Inductive Test Circuit
RG
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-VDD
DRIVER
A
15V
10V
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
Fig 13. For N-Channel HEXFETS
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Package Outline
SOT-223 (TO-261AA) Outline
SOT-223
Part Marking Information
DATE CODE (YWW)
Y = LAST D IGIT O F THE YEAR
WW = WEEK BOTTOM
PA RT NU MBE R
TOP
INTERNATIONAL
R EC TIF IER
L OGO
E X AMPLE : THIS IS A N IRF L01 4
WAFER
L OT C OD E
XXXXXX
314
FL014
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SOT-223 Outline
Tape & Reel Information
4.10 (.161)
3.90 (.154) 1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
12.10 (.475)
11.90 (.469)
7.10 (.279)
6.90 (.272)
1.60 (.062)
1.50 (.059)
T Y P .
7.55 (.297)
7.45 (.294) 7.60 (.299)
7.40 (.292)
2.30 (.090)
2.10 (.083)
16.30 (.641)
15.70 (.619)
0.35 (.013)
0.25 (.010)
FEED DIRECTION
TR
13.20 (.519)
12.80 (.504)
50.00 (1.969)
MIN.
330.00
(13.000)
MAX.
NOT ES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. O UT LIN E CO N FO R M S TO E IA-481 & E IA-541.
3. EA CH O330.00 (13.00) R EE L CON TAINS 2,500 D EVICE S.
3
NOTES :
1. O UT LINE C O M FO RM S TO E IA -418-1.
2. CO NTRO LLING DIM EN SIO N: M ILLIM ETER..
3. DIMENSIO N MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
15.40 (.607)
11.90 (.469)
18.40 (.724)
MA X.
14.40 (.566)
12.40 (.488)
4
4
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http://www.irf.com/ Data and specifications subject to change without notice. 1/99
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