AON7418 30V N-Channel AlphaMOS General Description Product Summary * Latest Trench Power AlphaMOS (MOS LV) technology * Very Low RDS(on) at 4.5VGS * Low Gate Charge * High Current Capability * RoHS and Halogen-Free Compliant Application * DC/DC Converters in Computing, Servers, and POL * Isolated DC/DC Converters in Telecom and Industrial VDS 30V 50A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 1.7m RDS(ON) (at VGS = 4.5V) < 2.8m 100% UIS Tested 100% Rg Tested DFN 3.3x3.3 EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25C Continuous Drain CurrentG Pulsed Drain Current C V A 200 46 IDSM TA=70C 20 39 IDM TA=25C Continuous Drain Current Avalanche Current C Units V 50 ID TC=100C Maximum 30 A 37 IAS 66 A Avalanche energy L=0.05mH C EAS 109 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25C PD TC=100C TA=25C Power Dissipation A Junction and Storage Temperature Range Rev 0: Oct 2011 6.2 Steady-State Steady-State RJA RJC W 4 TJ, TSTG Symbol t 10s W 33 PDSM TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case 83 -55 to 150 Typ 16 45 1.1 www.aosmd.com C Max 20 55 1.5 Units C/W C/W C/W Page 1 of 6 AON7418 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage VDS=VGSID=250A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125C IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd 1.7 2.8 m 1 V 50 A VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 0.4 m S 2994 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V 2.6 0.7 Diode Forward Voltage nA 2.2 1.4 153 Forward Transconductance VSD 100 2.1 2.2 gFS Output Capacitance 1.8 VGS=4.5V, ID=20A VDS=5V, ID=20A A 5 1.2 Units V 1 TJ=55C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ pF 1276 pF 196 pF 0.9 1.4 47.7 65 nC 23 31 nC 7.6 nC Gate Drain Charge 10 nC tD(on) Turn-On DelayTime 10.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr 7.5 ns 30.8 ns 8.8 ns IF=20A, dI/dt=500A/s 20 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 46 ns nC VGS=10V, VDS=15V, RL=0.75, RGEN=3 A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Oct 2011 www.aosmd.com Page 2 of 6 AON7418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.5V VDS=5V 80 80 10V 60 3.5V ID(A) ID (A) 60 3V 40 40 20 20 125C 25C VGS=2.5V 0 0 0 1 2 3 4 0 5 5 2 3 4 5 6 Normalized On-Resistance 2 4 RDS(ON) (m ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 3 2 1 VGS=10V 1.8 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 5 1.0E+02 ID=20A 1.0E+01 4 40 1.0E+00 IS (A) RDS(ON) (m ) 125C 3 125C 1.0E-01 1.0E-02 25C 2 1.0E-03 1 1.0E-04 25C 1.0E-05 0 0.0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Oct 2011 0.2 0.4 0.6 0.8 1.0 1.2 4 www.aosmd.com VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4000 Ciss 3000 Capacitance (pF) VGS (Volts) 3500 VDS=15V ID=20A 8 6 4 2500 2000 Coss 1500 1000 Crss 2 500 0 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 0 10s RDS(ON) 400 10.0 100s DC 1ms 10ms 1.0 TJ(Max)=150C TC=25C 0.1 TJ(Max)=150C TC=25C 10s Power (W) ID (Amps) 25 500 1000.0 100.0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 300 200 100 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJC=1.5C/W 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Oct 2011 www.aosmd.com Page 4 of 6 AON7418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 50 80 Current rating ID(A) Power Dissipation (W) 90 70 60 50 40 30 20 40 30 20 10 10 0 0 0 25 50 75 100 125 TCASE ( C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE ( C) Figure 13: Current De-rating (Note F) 150 TA=25C Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=55C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Oct 2011 www.aosmd.com Page 5 of 6 AON7418 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: Oct 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6