FLM6472-6F C-Band Internally Matched FET FEATURES * * * * * * * High Output Power: P1dB = 38.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package DESCRIPTION The FLM6472-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 31.2 W Total Power Dissipation Tc = 25C PT Storage Temperature Tstg -65 to +175 C Channel Temperature Tch 175 C Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 2500 3750 mA Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 16.0 and -2.8 mA respectively with gate resistance of 100W. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Symbol IDSS Test Conditions Transconductance gm VDS = 5V, IDS =1625mA - 2500 - mS Pinch-off Voltage Vp VDS = 5V, IDS =125mA -0.5 -1.5 -3.0 V IGS = -125A -5.0 - - V 37.5 38.5 - dBm 8.5 9.5 - dB Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. Drain Current G1dB Idsr Power-added Efficiency hadd VDS =10V, IDS = 0.65 IDSS (Typ.), f = 6.4 ~ 7.2 GHz, ZS=ZL= 50 ohm - 1625 1900 mA - 37 - % - - 0.6 dB -44 -46 - dBc Gain Flatness AEG 3rd Order Intermodulation Distortion IM3 f = 7.2 GHz, AEf = 10 MHz 2-Tone Test Pout = 27.5dBm S.C.L. Thermal Resistance Rth Channel to Case - 4.0 4.8 C/W AETch 10V x Idsr x Rth - - 80 C Channel Temperature Rise CASE STYLE: IB Edition 1.1 August 1999 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM6472-6F C-Band Internally Matched FET OUTPUT POWER & IM3 vs. INPUT POWER VDS=10V f1 = 7.2 GHz f = 7.21 GHz 33 2 2-tone test 35 30 20 10 0 50 100 150 200 31 -20 -25 Pout -30 29 -35 27 IM3 25 -40 23 -45 21 -50 19 -55 Case Temperature (C) IM3 (dBc) 40 Output Power (S.C.L.) (dBm) Total Power Dissipation (W) POWER DERATING CURVE 14 16 18 20 22 24 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY 40 Pin=30dBm 39 28dBm 38 37 26dBm 36 35 24dBm 34 VDS=10V f = 6.8 GHz 38 Pout 36 45 34 32 30 hadd 15 30 0 6.4 6.6 6.8 7.0 18 7.2 20 22 24 26 28 Input Power (dBm) Frequency (GHz) 2 30 hadd (%) VDS=10V P1dB Output Power (dBm) Output Power (dBm) 40 OUTPUT POWER vs. INPUT POWER FLM6472-6F C-Band Internally Matched FET S11 S22 6.4 +j10 0.2 +j100 +j25 6.2 GHz 6.6 7.0 7.2 0.1 +j250 7.4 6.8 7.4 6.8 7.4 SCALE FOR |S21| 7.2 6.6 0 25 7.0 6.4 250 1 180 3 4 0 6.2 GHz 6.8 7.2 6.2 GHz 2 7.0 7.2 -j10 S21 S12 +90 SCALE FOR |S12| +j50 -j250 7.4 6.2 GHz 6.4 6.6 7.0 6.4 6.8 -j25 -90 -j50 FREQUENCY (MHZ) 6.6 -j100 S11 MAG ANG S-PARAMETERS VDS = 10V, IDS = 1625mA S21 S12 MAG ANG MAG ANG S22 MAG ANG 6200 .539 144.1 3.216 -24.3 .034 -53.7 .588 -149.8 6300 .521 127.1 3.305 -37.9 .039 -73.7 .574 -161.0 6400 .507 109.4 3.354 -52.0 .044 -91.6 .560 -171.3 6500 .490 91.3 3.413 -66.7 .049 -107.9 .547 179.3 6600 .474 72.5 3.438 -81.0 .054 -122.4 .538 170.2 6700 .462 53.7 3.410 -96.0 .058 -134.3 .529 161.2 6800 .451 34.7 3.374 -110.8 .063 -145.4 .514 151.5 6900 .442 16.2 3.309 -125.4 .069 -158.2 .493 140.8 7000 .435 -1.9 3.232 -139.2 .076 -171.4 .461 129.3 7100 .431 -19.1 3.159 -152.1 .083 175.6 .421 117.2 7200 .429 -38.0 3.124 -166.0 .086 160.9 .367 103.9 7300 .432 -57.9 3.079 179.9 .088 146.8 .301 88.4 7400 .441 -78.9 3.035 164.7 .090 130.5 .234 70.5 3 FLM6472-6F C-Band Internally Matched FET 2.0 Min. (0.079) Case Style "IB" Metal-Ceramic Hermetic Package 1 0.1 (0.004) 2 12.90.2 (0.508) 2-R 1.60.15 (0.063) 3 2.60.15 (0.102) 2.0 Min. (0.079) 0.6 (0.024) 5.2 Max. (0.205) 1.45 (0.059) 0.2 Max. (0.008) 10.7 (0.421) 1. Gate 2. Source (Flange) 3. Drain 12.0 (0.472) Unit: mm(inches) 17.00.15 (0.669) 21.00.15 (0.827) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4