FEATURES
• High Output Power: P1dB = 38.5dBm (Typ.)
• High Gain: G1dB = 9.5dB (Typ.)
• High PAE: hadd = 37% (Typ.)
• Low IM3= -46dBc@Po = 27.5dBm
• Broad Band: 6.4 ~ 7.2GHz
• Impedance Matched Zin/Zout = 50W
• Hermetically Sealed Package
1
Edition 1.1
August 1999
FLM6472-6F
C-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
31.2
-65 to +175
175
Tc = 25¡C
V
V
W
¡C
¡C
PT
Tstg
Tch
Condition Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25¡C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.8 mA respectively with
gate resistance of 100W.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
3rd Order Intermodulation
Distortion
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS - 2500 3750
- 2500 -
-0.5 -1.5 -3.0
-5.0 - -
8.5 9.5 -
-37-
37.5 38.5 -
VDS = 5V, IDS =125mA
VDS = 5V, IDS =1625mA
VDS = 5V, VGS = 0V
IGS = -125µA
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 6.4 ~ 7.2 GHz,
ZS=ZL= 50 ohm
f = 7.2 GHz, Æf = 10 MHz
2-Tone Test
Pout = 27.5dBm S.C.L.
mA
mS
V
dB
%
-44 -46 - dBc
dBm
V
gm
Vp
VGSO
P1dB
G1dB
Drain Current - 1625 1900 mA
Idsr
IM3
hadd
Gain Flatness --±0.6 dBÆG
Test Conditions Unit
Limit
Typ. Max.Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25¡C)
Channel to Case
Thermal Resistance - 4.0 4.8 ¡C/W
Rth
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE: IB
10V x Idsr x Rth
Channel Temperature Rise --80 ¡C
ÆTch
DESCRIPTION
The FLM6472-6F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
2
FLM6472-6F
C-Band Internally Matched FET
POWER DERATING CURVE
500 100 150 200
Case Temperature (¡C)
40
30
20
10
Total Power Dissipation (W)
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 7.2 GHz
f2 = 7.21 GHz
2-tone test
181614 20 22 24
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
21
23
25
27
29
31
33
35
19 -55
-50
-45
-40
-35
-30
-25
-20
Output Power (S.C.L.) (dBm)
IM3
Pout
IM3 (dBc)
OUTPUT POWER vs. FREQUENCY
Pin=30dBm
28dBm
26dBm
24dBm
6.66.4 6.8 7.0 7.2
Frequency (GHz)
36
37
38
39
40
34
35
Output Power (dBm)
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
VDS=10V
f = 6.8 GHz
2018 22 24 26 28 30
Input Power (dBm)
38
40
36
34
32
30
30
45
15
0
Output Power (dBm)
hadd
Pout
hadd (%)
3
FLM6472-6F
C-Band Internally Matched FET
S-PARAMETERS
VDS = 10V, IDS = 1625mA
FREQUENCY S11 S21 S12 S22
(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
6200 .539 144.1 3.216 -24.3 .034 -53.7 .588 -149.8
6300 .521 127.1 3.305 -37.9 .039 -73.7 .574 -161.0
6400 .507 109.4 3.354 -52.0 .044 -91.6 .560 -171.3
6500 .490 91.3 3.413 -66.7 .049 -107.9 .547 179.3
6600 .474 72.5 3.438 -81.0 .054 -122.4 .538 170.2
6700 .462 53.7 3.410 -96.0 .058 -134.3 .529 161.2
6800 .451 34.7 3.374 -110.8 .063 -145.4 .514 151.5
6900 .442 16.2 3.309 -125.4 .069 -158.2 .493 140.8
7000 .435 -1.9 3.232 -139.2 .076 -171.4 .461 129.3
7100 .431 -19.1 3.159 -152.1 .083 175.6 .421 117.2
7200 .429 -38.0 3.124 -166.0 .086 160.9 .367 103.9
7300 .432 -57.9 3.079 179.9 .088 146.8 .301 88.4
7400 .441 -78.9 3.035 164.7 .090 130.5 .234 70.5
7.4
7.2
7.0
6.4
7.2
7.0
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180¡
+90¡
0¡
-90¡
S21
S12
0.2
0.1
SCALE FOR |S12|
25 250
SCALE FOR |S21|
1 2 3 4
7.4
7.4
6.6
6.6
6.2 GHz
6.2 GHz
6.4
6.4
6.8 6.8
7.0
7.2
7.2
7.4
6.6
6.6 6.2 GHz
6.2 GHz
6.8
6.8
6.4
7.0
4
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FLM6472-6F
C-Band Internally Matched FET
2-R 1.6±0.15
(0.063)
0.6
(0.024)
10.7
(0.421)
12.0
(0.472)
17.0±0.15
(0.669)
21.0±0.15
(0.827)
12.9±0.2
(0.508) 2.0 Min.
(0.079)
2.0 Min.
(0.079)
0.2 Max.
(0.008)
1.45
(0.059)
Case Style "IB"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source (Flange)
3. Drain
5.2 Max.
(0.205)
2.6±0.15
(0.102)
0.1
(0.004)
1
2
3
