2001-2012 Microchip Technology Inc. DS21392D-page 1
TC1413/TC1413N
Features
• Latch-Up Protected: Will Withstand 500 mA
Reverse Current
• Input Will Withstand Negative Inputs Up to 5V
• ESD Protected: 4 kV
• High Peak Output Current: 3A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 16V
• High Capacitive Load Drive Capability:
- 1800 pF in 20 nsec
• Short Delay Time: 35 nsec Typ
• Mat ched Delay Times
• Low Supply Current
- With Logic ‘1’ Input: 500 µA
- With Logic ‘0’ Input: 100 µA
• Low Output Impedance: 2.7
• Available in Space-Saving 8-pin MSOP Package
• Pinout Same as TC1410/TC1411/TC1412
Applications
• Switch Mode Power Supplies
• Line Drivers
• Pulse Transformer Drive
• Relay Driver
Package Type
General Description
The TC1413/TC1413N are 3A CMOS buffers/drivers.
They will not latch-up under any conditions within their
power and voltage ratings. They are not subject to
damage when up to 5V of noise spiking of either
polarity occurs on the ground pin. They can accept,
withou t dama ge or l ogic u ps et, up to 500 mA of curre nt
of eit her p ola rity bei ng forc ed b ack in to th eir o utp ut. Al l
terminals are fully protected against up to 4 kV of
electrostatic discharge.
As MOSFET drivers, the TC1413/TC1413N can easily
charge an 1800 pF gate capacitance in 20 nsec with
matched rise and fall times, and provide low enough
impedance in both the ON and the OFF states to
ensure the MOSFET’s intended state will not be
affected, even by large transients. The leading and
trailing edge prop agatio n delay times are also matc hed
to allow driving short-duration inputs with greater
accuracy.
26,7
Inverting
8-Pin MSOP/PDIP/SOIC
1
2
3
4
VDD
5
6
7
8OUT
GND
VDD
IN
NC
GND OUT
TC1413
NC = No Internal Connection
26,7
Non-Inverting
1
2
3
45
6
7
8
TC1413N
VDD
IN
NC
GND
VDD
OUT
GND
OUT
NOTE: Duplicate pins must be connected together
for proper operation.
3A High-Speed MOSFET Drivers
TC1413/TC1413N
DS21392D-page 2 2001-2012 Microchip Technology Inc.
Functional Block Diagram
Effective
Input C = 10 pF TC1413N
Output
Input
GND
VDD
300 mV
4.7V
Inverting
Non-Inverting
Outputs
Outputs
TC1413
2001-2012 Microchip Technology Inc. DS21392D-page 3
TC1413/TC1413N
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage.....................................................+20V
Input Voltage......................VDD + 0.3V to GND – 5.0V
Power Dissipation (TA 70°C)
MSOP..........................................................340 mW
PDIP............................................................730 mW
SOIC............................................................470 mW
Storage Temperature Range..............-65°C to +150°C
Maximum Junction Temperature...................... +150ºC
† Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and funct ional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
PIN FUNCTION TABLE
Symbol Description
VDD Supply input, 4.5V to 16V
INPUT Control input
NC No connection
GND Ground
GND Ground
OUTPUT CMOS push-pull output,
common to pin 7
OUTPUT CMOS push-pull output,
common to pin 6
VDD Supply input, 4.5V to 16V
DC ELECTRIC AL CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V VDD16V.
Typical values are measured at TA = +25°C, VDD= 16V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.0 — — V
Logic ‘0’, Low Input Voltage VIL ——0.8V
Input Current IIN -1.0 — 1.0 µA 0VVINVDD, TA = +25°C
-10 — 10 -40°CTA+85°C
Output
High Output Voltage VOH VDD – 0.025 — — V DC Test
Low Ou tput Voltage VOL — — 0.025 V DC Test
Output Re si stance RO—2.74.0VDD = 16V, IO = 10 mA, TA = +25°C
—3.35.0 0°CTA+70°C
— 3.3 5.0 -40°CTA+85°C
Peak Output Current IPK —3.0—AV
DD = 16V
Latch-Up Prote cti on
Withstand Reverse Current IREV — 0.5 — A Duty cycle2%, t 300 µsec,
VDD = 16V
Switching Tim e (Note 1)
Rise Time tR—2028nsecT
A = +25°C
—2233 0°CTA+70°C
—2433 -40°CTA+85°C, Figure 4-1
Fall Time tF—2028nsecT
A = +25°C
—2233 0°CTA+70°C
—2433 -40°CTA+85°C, Figure 4-1
Note 1: Switching times ensured by design.
TC1413/TC1413N
DS21392D-page 4 2001-2012 Microchip Technology Inc.
TEMPERATURE CHARACTERISTICS
Delay Time tD1 —3545nsecT
A = +25°C,
—4050 0°CTA+70°C
—4050 -40°CTA+85°C, Figure 4-1
Delay Time tD2 —3545nsecT
A = +25°C
—4050 0°CTA+70°C
—4050 -40°CTA+85°C, Figure 4-1
Power Supply
Power Supply Current IS—0.51.0mAV
IN = 3V, V DD = 16V
— 0.1 0.15 VIN = 0V
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range (C) TA0—+70ºC
Specified Temperature Range (E) TA-40 — +85 ºC
Maximum Junction Temperature TJ— — +150 ºC
Storage Temperature Range TA-65 — +150 ºC
Package Thermal Resistances
Thermal Resistance, 8L-MSOP JA —206—ºC/W
Thermal Resistance, 8L-PDIP JA —125—ºC/W
Thermal Resistance, 8L-SOIC JA —155—ºC/W
DC ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V VDD16V.
Typical values are measured at TA = +25°C, VDD= 16V.
Parameters Sym Min Typ Max Units Conditions
Note 1: Switching times ens ured by design.
2001-2012 Microchip Technology Inc. DS21392D-page 5
TC1413/TC1413N
2.0 TYP ICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, over operating temperature range with 4.5V VDD16V.
FIGURE 2-1: Quiescent Supply Current
vs. Supply Voltage.
FIGURE 2-2: Input Threshold vs. Supply
Voltage.
FIGURE 2-3: High-State Output
Resistance vs. Supply Voltage
FIGURE 2-4: Quiescent Supply Current
vs. Temperature.
FIGURE 2-5: Input Threshold vs.
Temperature.
FIGURE 2-6: Low-State Output
Resistance vs. Supply Voltage.
Note: The g r ap hs and t ables provided fol low i ng thi s n ote are a statistical s umm ary based on a l im ite d n um ber of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
100
200
300
400
500
16141210864
VIN = 3V
VIN = 0V
TA = +25°C
ISUPPLY (µA)
VDD (V)
V
DD
(V)
V
THRESHOLD
(V)
1.1
1.2
1.3
1.4
1.5
1.6
16141210864
V
IH
V
IL
T
A
= +25°C
RDS-ON (Ohms)
VDD (V)
1
2
3
4
5
6
7
8
9
16141210864
TA = -40°C
TA = +25°C
TA = +85°C
ISUPPLY (µA)
TEMPERATURE (°C)
-40 -200 20406080
0
100
200
300
400
500
VIN = 3V
VIN = 0V
VSUPPLY = 16V
-40 -20 0 20 40 60 80
1.1
1.2
1.3
1.4
1.5
1.6
V
SUPPLY
= 16V
TEMPERATURE (°C)
V
THRESHOLD
(V)
V
IH
V
IL
R
DS-ON
(Ohms)
V
DD
(V)
1
2
3
4
5
6
7
8
9
16141210864
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
TC1413/TC1413N
DS21392D-page 6 2001-2012 Microchip Technology Inc.
Note: Unless otherwise indicated, over operating temperature range with 4.5V VDD16V.
FIGURE 2-7: Rise Time vs. Supply
Voltage.
FIGURE 2-8: Propagation Delay vs.
Supply Voltage.
FIGURE 2-9: Rise and Fall Times vs.
Capacitive Load .
FIGURE 2-10: Fall Time vs. Supply
Voltage.
FIGURE 2-11: Propagation Delay vs.
Supply Voltage.
FIGURE 2-12: Propagation Delays vs.
Capacitive Loa d.
VDD (V)
tRISE (nsec)
10
20
30
40
50
60
70
16141210864
TA = +25°C
TA = +85°C
CLOAD = 1800 pF
TA = -40°C
VDD (V)
tD1 (nsec)
20
30
40
50
60
70
80
90
100
110
16141210864
TA = -40°C
TA = +25°C
TA = +85°C
CLOAD = 1800 pF
t
RISE
, t
FALL
(nsec)
C
LOAD
(pF)
0 1000 2000 3000 4000 5000
0
10
20
30
40
t
FALL
t
RISE
T
A
= +25°C
V
DD
= 16V
t
FALL
(nsec)
10
20
30
40
50
60
70
16141210864
V
DD
(V)
T
A
= +25°C
T
A
= +85°C
C
LOAD
= 1800 pF
T
A
= -40°C
V
DD
(V)
t
D2
(nsec)
20
30
40
50
60
70
80
90
100
16141210864
C
LOAD
= 1800 pF
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
C
LOAD
(pF)
Propagation Delays (nsec)
0 1000 2000 3000 4000 5000
28
29
30
31
32
33
34
35
t
D2
t
D1
T
A
= +25°C
V
DD
= 16V
2001-2012 Microchip Technology Inc. DS21392D-page 7
TC1413/TC1413N
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
3.1 Supply Input (VDD)
The VDD in put is the bia s supply for the M OSFET driver
and is rated for 4.5V to 16V with respect to the ground
pin. The VDD input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
shoul d be chos en base d on the capaciti ve load that is
being driven. A value of 1.0 µF is suggested.
3.2 Control Input (INPUT)
The MOSFET driver input is a high-impedance,
TTL/CM OS-c o mpatible input. The input has 300 mV of
hysteresis between the high and low thresholds which
prevents output glitching even when the rise and fall
time of the input signal is very slow.
3.3 CMOS Push-Pull Output
(OUTPUT)
The MOS FET driver ou tput is a low-im pedance, C MOS
push-pull style output, capable of driving a capacitive
load with 3A peak currents.
3.4 Ground (GND)
The ground pin s are the return pa th for the bias current
and for the high peak currents that discharge the load
capa citor. The ground pi ns shoul d be tied i nto a groun d
plane or have very short traces to the bias supply
source retur n.
3.5 No Connect (NC)
No interna l conn ec tio n.
Pin
No. Symbol Description
1V
DD Supply input, 4.5V to 16V
2INPUT Control input
3 NC No connection
4 GND Ground
5 GND Ground
6 OUTPUT CMOS push-pul l out put,
common to pin 7
7 OUTPUT CMOS push-pul l out put,
common to pin 6
8V
DD Supply input, 4.5V to 16V
TC1413/TC1413N
DS21392D-page 8 2001-2012 Microchip Technology Inc.
4.0 APPLICATION INFORMATION
FIGURE 4-1: Switching Time Test Circui t.
CL = 1800 pF
0.1 µF
1.0 µF
Inverting Driver
Non-Inv erti ng Dr iver
Input
VDD = 16V
Input
Output
tD1 tF
tR
tD2
Input: 100 kHz,
square wave,
tRISE = tFALL 10 nsec
Output
Input
Output
tD1 tF
tR
tD2
+5V
10%
90%
10%
90%
10%
90%
VDD
0V
90%
10%
10% 10%
90%
+5V
VDD
0V
0V
0V
90%
4, 5
26, 7
1, 8
TC1413
TC1413N
TC1413N
TC1413
2001-2012 Microchip Technology Inc. DS21392D-page 9
TC1413/TC1413N
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
XXXXXXXX
XXXXXNNN
YYWW
8-Lead PDIP (300 mil) Example:
TC1413
CPA057
0347
8-Lead SOIC (150 mil) Example:
XXXXXXXX
XXXXYYWW
NNN
TC1413
COA0347
057
8-Lead MSOP Example:
XXXXXXX
YWWNNN
1413NE
347057
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is w eek ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microc hip p art num ber cannot be marked on one lin e, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
TC1413/TC1413N
DS21392D-page 10 2001-2012 Microchip Technology Inc.
8-Lead Plastic Dual In-line (PA) – 300 mil (PDIP)
B1
B
A1
A
L
A2
p
E
eB
c
E1
n
D
1
2
Units INCHES* MILLIMETERS
Dimen sion Li mits MIN NOM MAX MIN NOM MAX
Number of Pins n88
Pitch p.100 2.54
Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32
Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68
Base to Seating Plane A1 .015 0.38
Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26
Molded Package Width E1 .240 .250 . 260 6.10 6 .35 6.60
Overall Len gth D .360 .373 .385 9.1 4 9 .46 9.78
Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43
Lead Thi ckne ss c.008 .012 .015 0.20 0.29 0.38
Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78
Lower Lead Width B .014 .018 .022 0.36 0.46 0.56
Overall Row Spacing § eB .310 .370 .430 7.8 7 9 .40 10 .92
Mold Draft Angle Top 5 10 15 5 10 15
Mold Draft Angle Bottom 5 10 15 5 10 15
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
JEDEC Equivalent: MS-001
Drawing No. C04-018
.010” (0. 254 mm ) per si de.
§ Significant Characteristic
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.c om/packaging
2001-2012 Microchip Technology Inc. DS21392D-page 11
TC1413/TC1413N
8-Lead Plastic Small Outline (OA) – Narrow, 150 mil (SOIC)
Foot A ngle 048048
1512015120
Mold Draft Angle Bottom 1512015120
Mold Draft Angle Top 0.510.420.33.020.017.013BLead Width 0.250.230.20.010.009.008
c
Lead Thickness
0.760.620.48.030.025.019LFoot Length 0.510.380.25.020.015.010hChamfer Distance 5.004.904.80.197.193.189DOverall Length 3.993.913.71.157.154.146E1Molded Pa ckag e Width 6.206.025.79.244.237.228EOverall Width 0.250.180.10.010.007.004A1Standoff § 1.551.421.32.061.056.052A2Molded Packag e Thickness 1.751.551.35.069.061.053AOverall Height 1.27.050
p
Pitch 88
n
Numb er of Pin s MAXNOMMINMAXNOMMINDimension Limits MILLIMETERSINCHES*Units
2
1
D
n
p
B
E
E1
h
L
c
45
A2
A
A1
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equiva lent : MS- 012
Drawing No. C04-057
§ Significant Characteristic
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microc hip .c om/p ac k agi ng
TC1413/TC1413N
DS21392D-page 12 2001-2012 Microchip Technology Inc.
8-Lead Plastic Micro Small Outline Package (UA) (MSOP)
D
A
A1
L
c
(F)
A2
E1
E
p
B
n 1
2
Dimensions D and E 1 do not include mold flash or protrusions. Mold flas h or protrusions shall not
.037 RE FFFootprint (R eference)
exceed .010" (0.254mm) per side.
Notes:
Drawin
g
No. C04-111
*C ontrolling P a rame te r
Mold Draft Angle Top
Mold D raft Angle B ottom
F oot Angle
Lead Width
Lead Thickness
c
B
.003
.009
.006
.012
Dimens ion Limits
Overall Height
Molded Package Thickness
Molded Package Width
Overall Length
F oot Length
Standoff
Overall Width
Number of Pins
Pitch
A
L
E1
D
A1
E
A2
.016 .024
.118 BS C
.118 BS C
.000
.030
.193 BS C
.033
MIN
p
n
Units
.026 BS C
NOM
8
INC HE S
0.95 R EF
-
-
.009
.016
0.08
0.22
0˚
0.23
0.40
8˚
MILLIMETERS*
0.65 BS C
0.85
3.00 BS C
3.00 BS C
0.60
4.90 BS C
.043
.031
.037
.006
0.40
0.00
0.75
MIN
MAX NOM
1.10
0.80
0.15
0.95
MAX
8
--
-
15˚5˚ -
15˚5˚ -
JE DE C E quivalent: MO-187
0˚ - 8˚
5˚
5˚ -
-
15˚
15˚
--
--
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.c om/packaging
2001-2012 Microchip Technology Inc. DS21392D-page 13
TC1413/TC1413N
6.0 REVISION HISTORY
Revision D (December 2012)
Added a note to each package outline drawing.
TC1413/TC1413N
DS21392D-page 14 2001-2012 Microchip Technology Inc.
NOTES:
2001-2012 Microchip Technology Inc. DS21392D-page 15
TC1413/TC1413N
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Sales and Support
Device: TC1413: 3 A Single MOSFET Driver, Inverting
TC1413N: 3 A Single MOSFET Driver, Non-Inverting
Temperature Range: C = 0°C to +70°C
E = -40°C to +85°C
Package: OA = Plastic SOIC, (150 mil Body), 8-lead
OA713 = Plastic SOIC, (150 mil Body), 8-lead
(Ta pe and Reel )
UA = Plastic Micro Small Outline (MSOP), 8-lead *
UA713 = Plastic Micro Small Outline (MSOP), 8-lead *
(Ta pe and Reel )
PA = Plastic DIP (300 mil Body), 8-lead
* MSOP package is only available in E-Temp.
PART NO. X/XX
PackageTemperature
Range
Device
Examples:
a) TC1413COA: 3A Single MOSFET driver,
SOIC package, 0°C to +70°C.
b) TC1413CPA: 3A Single MOSFET driver,
PDIP package, 0°C to +70°C.
c) TC1413EUA713: Tape and Reel, 3A
Single MOSFET driver, MSOP package,
-40°C to +85°C.
a) TC1413NCP A: 3A Single MOSFET driver ,
PDIP package, 0°C to +70°C.
b) TC1413NEPA: 3A Single MOSFET driver ,
PDIP package, -40°C to +85°C.
c) TC1413NEUA: 3A Single MOSFET driver ,
MSOP package, -40°C to +85°C.
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com /cn) to receive the most current information on our products.
TC1413/TC1413N
DS21392D-page 16 2001-2012 Microchip Technology Inc.
NOTES:
2001-2012 Microchip Technology Inc. DS21392D-page 17
Information contained in this publication regarding device
applications a nd the lik e is provided only f or yo ur convenience
and may be supers ed ed by u pda t es . It is y our responsibil it y to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
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conveyed, implicitly or otherwise, under any Microchip
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Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
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PICSTART, PIC 32 logo, rfPIC, SST, SST Logo, SuperF lash
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Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONIT OR, FanSense, HI-TIDE , In-Circuit Seria l
Programm ing, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
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SQTP is a service mark of Microchip T echnology Incorporated
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GestIC and ULPP are registered trademarks of Microchip
Technology Germany II Gm bH & Co. & KG, a subsidiary of
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All other trademarks mentioned herein are property of their
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© 2001-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620767870
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intended manner and under normal conditions.
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knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
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Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hoppin g
devices, Serial EEPROMs, microperiph erals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
DS21392D-page 18 2001-2012 Microchip Technology Inc.
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Worldwide Sales and Service
11/27/12
