PS2805C-1-V-F3-A - RENESAS TECHNOLOGY

R08DS0074EJ0300 Rev.3.00 Page 1 of 12

Jan 9, 2013

PS2805C-1

PS2805C-4

PIN CONNECTION

(Top View)

1. Anode, Cathode

2. Cathode, Anode

3. Emitter

4. Collector

12345678

1615 1413 1211 10 9

Anode, Cathode

Cathode, Anode

Emitter

Collector

1. 3. 5. 7.

2. 4. 6. 8.

9. 11. 13. 15.

10. 12. 14. 16.

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

Data Sheet

PS2805C-1, PS2805C-4

HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SSOP PHOTOCOUPLER

DESCRIPTION

The PS2805C-1 and PS2805C-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN

silicon phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance.

This package has shield effect to cut off ambient light.

FEATURES

• High isolati on vol t a ge (BV = 2 500 Vr.m.s.)

• Small and thin package (4, 16-pin S SO P, Pi n pit c h 1. 2 7 mm)

• High collector to emitter voltage (VCEO : 80 V)

• AC input response

• Ordering number of tape product: PS2805C-1-F3, PS2805C-4-F3

• Pb-Free product

• Safety standards

• UL approved: No. E72422

• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 6095 0)

• BSI approved (BS EN 60065, BS EN 60950) (PS2805C-1 only)

• DIN EN 60747-5-5 (VDE 0884-5) approved (Option)

APPLICATIONS

• Programmable logic controllers

• OA equipment

• Measuring instruments

• Hybrid IC

R08DS0074EJ0300

Rev.3.00

Jan 9, 2013

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PS2805C-1, PS2805C-4e

R08DS0074EJ0300 Rev.3.00 Page 2 of 12

Jan 9, 2013

PACKAGE DIMENSIONS (UNIT: mm)

0.12

0.4±0.1

1.27

2.0±0.1

0.1±0.1

PS2805C-1 PS2805C-4

4.4

7.0±0.3

0.5±0.3

0.15+0.10

–0.05

4.4

7.0±0.3

0.5±0.3

0.15+0.10

–0.05

1.27

2.0

+0.3

–0.2

0.1±0.1

0.12

0.40

+0.10

–0.05

2.7±0.3

10.3±0.3

16 9

PHOTOCOUPLER CONSTRUCTION

Parameter Unit (MIN.)

Air Distance 4.5 mm

Outer Creepage Distance 4.5 mm

Inner Creepage Distance 2.5 mm

Isolation Distance 0.1 mm

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PS2805C-1, PS2805C-4e

R08DS0074EJ0300 Rev.3.00 Page 3 of 12

Jan 9, 2013

MARKING EXAMPLE

PS2805C-1

Made in Taiwan

Made in Japan

" " (Square)

:Made in Japan

Week Assembled

Year Assembled (Last 1 digit)

Last 2 numbers of type

No. : 5C

Assembly Lot

301

R5C

301

R5C

301

Company initial

PS2805C-4

Country Assembled

Assembly Lot

No. 1 pin

Mark

PS2805C-4

NL301

301

Year Assembled

(Last 1 Digit)

Rank Code

In-house Code

(L: Pb-Free)

Week Assembled

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PS2805C-1, PS2805C-4e

R08DS0074EJ0300 Rev.3.00 Page 4 of 12

Jan 9, 2013

ORDERING INFORMATION

Part Number Order Number Solder Plating

Specification Packing Style Safety Standards

Approval Application

Part Number*1

PS2805C- 1-F 3 PS2805C- 1-F 3- A Embossed T ape 3

500 pcs/reel PS2805C-1

PS2805C- 4-F 3 PS2805C- 4-F 3- A Embossed T ape 2

500 pcs/reel

Standard products

(UL, CSA, BSI approved)

PS2805C-4

PS2805C-1-V-F3 PS2805C-1-V-F3-A Embossed T ape 3

500 pcs/reel PS2805C-1

PS2805C-4-V-F3 PS2805C-4-V-F3-A

Pb-Free

Embossed Tape 2

500 pcs/reel

DIN EN 60747-5-5

(VDE0884 -5)

Approved (Option) PS2805C-4

Note: *1. For the application of the Safety Standard, follo wing part number should be used.

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

Parameter Symbol Ratings Unit

PS2805C-1 PS2805C-4

Diode Forward Current (DC) IF ±30 mA/ch

Power Dissipation Derating

PD/°C 0.6 0.8 mW/°C

Power Dissipation PD 60 80 mW/ch

Peak Forward Current *1 I

FP ±0.5 A/ch

Transistor Collector to Emitter Voltage VCEO 80 V

Emitter to Collector Voltage VECO 5 V

Collector Current IC 30 mA/ch

Power Dissipation Derating

PC/°C 1.2 mW/°C

Power Dissipation PC 120 mW/ch

Isolation Voltage *2 BV 2 500 Vr.m.s.

Operating Ambient Temperature TA −55 to +100 °C

Storage Temperature Tstg −55 to +150 °C

Notes: *1. PW = 100

s, Duty Cycle = 1%

*2. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.

Pins 1-2 shorted together, 3-4 shorted together (PS2805C-1).

Pins 1-8 shorted together, 9-16 shorted together (PS2805C-4).

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PS2805C-1, PS2805C-4e

R08DS0074EJ0300 Rev.3.00 Page 5 of 12

Jan 9, 2013

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Diode Forward Voltage VF I

F = ±5°mA 1.2 1.4 V

Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 20 pF

Transistor Collector to Emitter

Dark Current ICEO V

CE = 80 V, IF = 0 mA 100 nA

Coupled Current Transfer Ratio

(IC/IF) *1 CTR IF = ±5 mA, VCE = 5 V 50 400 %

Collector Saturation

Voltage VCE (sat) I

F = ±10 mA, IC = 2 mA 0.13 0.3 V

Isolation Resistance RI-O V

I-O = 1.0 kVDC 1011 Ω

Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.4 pF

Rise Time *2 t

r V

CC = 5 V, IC = 2 mA, RL = 100 Ω 5

Fall Time *2 t

f 7

Turn-on Time*2 t

on 10

Turn-off Time*2 t

off 7

Notes: *1. CTR rank

PS2805C-1

N : 50 to 400 (%)

M : 100 to 400 (%)

PS2805C-4

N : 50 to 400 (%)

M : 100 to 400 (%)

*2. Test circuit for switching time

Input

Output

90%

10%

off

PW = 100 s

Duty Cycle = 1/10

OUT

Pulse Input

= 100 Ω

50 Ω

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PS2805C-1, PS2805C-4e

R08DS0074EJ0300 Rev.3.00 Page 6 of 12

Jan 9, 2013

TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)

100

PS2805C-1

PS2805C-4

0.8 mW/°C

0.6 mW/°C

0 25 50 75 100 125

Ambient Temperature T

(°C)

Diode Power Dissipation P

(mW)

DIODE POWER DISSIPATION vs.

AMBIENT TEMPERATURE

200

160

120

PS2805C-1

PS2805C-4

1.2 mW/°C

0 25 50 75 100 125

Ambient Temperature T

(°C)

Transistor Power Dissipation P

(mW)

TRANSISTOR POWER DISSIPATION

vs. AMBIENT TEMPERATURE

100

1.51.41.31.21.11.00.90.80.7

0.5

0.1

–25

–55

+60

+25

= +100

0.05

Forward Voltage V

(V)

Forward Current I

(mA)

FORWARD CURRENT vs.

FORWARD VOLTAGE

00246810

= 10 mA

5 mA

2 mA

1 mA

Collector to Emitter Voltage V

(V)

Collector Current I

(mA)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

Ambient Temperature T

(°C)

Collector to Emitter Dark Current I

CEO

(nA)

COLLECTOR TO EMITTER DARK

CURRENT vs. AMBIENT TEMPERATURE

10 000

1 000

100

10 25 50 75 100

24 V

70 V

= 80 V

Collector Saturation Voltage V

CE(sat)

(V)

Collector Current I

(mA)

COLLECTOR CURRENT vs.

COLLECTOR SATURATION VOLTAGE

0.10 0.2 0.4 0.6 0.8 1.0

= 10 mA

5 mA

2 mA

1 mA

CTR = 200% CTR = 250%

CTR = 250%

Remark The graphs indicate nominal character istics.

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PS2805C-1, PS2805C-4e

R08DS0074EJ0300 Rev.3.00 Page 7 of 12

Jan 9, 2013

100

0.1

10 100 1 000 10 000

= 2 mA, V

= 5 V,

CTR = 228%

Switching Time t ( s)

Load Resistance RL (Ω)

SWITCHING TIME vs.

LOAD RESISTANCE

1.4

1.2

1.0

0.8

0.6

0.4

0.2

–

–7

–

25 0 25 7550 100

Ambient Temperature T

A (°C)

Normalized Current Transfer Ratio CTR

NORMALIZED CURRENT TRANSFER

RATIO vs. AMBIENT TEMPERATURE

Normalized to 1.0

at TA = 25°C,

IF = 5 mA, VCE = 5 V

CTR = 250%

80%

400

300

200

100

0.01 0.1 1 10 100

= 5 V,

n = 3

Forward Current I

F (mA)

Current Transfer Ratio CTR (%)

CURRENT TRANSFER RATIO vs.

FORWARD CURRENT

Sample A

0.1 1 10 100 1 000

= 1 kΩ

300 Ω

100 Ω

= 5 mA,

= 5 V

–

FREQUENCY RESPONSE

Frequency f (kHz)

Normalized Gain Gv

1 000

100

11 10 100

= 5 mA, V

= 5 V,

CTR = 228%

Load Resistance RL (kΩ)

SWITCHING TIME vs.

LOAD RESISTANCE

Switching Time t ( s)

Remark The graphs indicate nominal characteristics.

PS2805C-1, PS2805C-4e

R08DS0074EJ0300 Rev.3.00 Page 8 of 12

Jan 9, 2013

TAPING SPECIFICATIONS (UNIT: mm)

Outline and Dimensions (Reel)

Packing: 3 500 pcs/reel

2.0±0.5

R 1.0

13.0±0.2

21.0±0.8

Tape Direction

PS2805C-1-F3

Outline and Dimensions (Tape)

1.55±0.1

4.0±0.1

2.0±0.1

4.0±0.1

1.75±0.1

2.8 MAX.

7.55±0.1

0.3

7.5±0.1

16.0±0.3

2.85±0.1 2.3±0.1

1.5

+0.1

–0

330±2.0

100±1.0

2.0±0.5

15.9 to 19.4

Outer edge of

flange

21.5±1.0

17.5±1.0

301

R5C

301

R5C

301

R5C

301

R5C

301

R5C

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PS2805C-1, PS2805C-4e

R08DS0074EJ0300 Rev.3.00 Page 9 of 12

Jan 9, 2013

Tape Direction

PS2805C-4-F3

Outline and Dimensions (Reel)

Packing: 2 500 pcs/reel

2.0±0.5

R 1.0

13.0±0.2

21.0±0.8

Outline and Dimensions (Tape)

1.55±0.1

12.0±0.1

2.0±0.1

4.0±0.1

1.75±0.1

16.0±0.3

8.3±0.1

2.8 MAX.

10.7±0.1

0.3

2.3±0.1

7.5±0.1

1.5

+0.1

–0

330±2.0

100±1.0

2.0±0.5

15.9 to 19.4

Outer edge of

flange

21.5±1.0

17.5±1.0

PS2805C-1, PS2805C-4e

R08DS0074EJ0300 Rev.3.00 Page 10 of 12

Jan 9, 2013

NOTES ON HANDLING

1. Recommended soldering conditions

(1) Infrared reflow soldering

• Peak reflow temperature 260°C or below (package surface temperature)

• Ti me of pe ak reflow temperature 10 seconds or less

• Time of temperature higher than 220°C 60 seconds or less

• Time to preheat temp erature from 120 to 180°C 120±30 s

• Number of reflows Three

• Flux Rosin flux containing small amount of chlorine (The flux

with a maximum chlorine content of 0.2 Wt% is

recommended.)

120±30 s

(preheating)

220°C

180°C

Package Surface Temperature T (°C)

Time (s)

Recommended Temperature Profile of Infrared Reflow

(heating)

to 10 s

to 60 s

260°C MAX.

120°C

(2) Wave soldering

• Temperature 260°C or below (molten solder temperature)

• Time 10 seconds or less

• Preheating conditions 120°C or below (package surface temp erature)

• Number of times One (Allowed to be dipped in solder including plastic mold portion.)

• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine

content of 0.2 Wt% is recommended.)

(3) Soldering by Soldering Iron

• Peak Temperature (lead part temperature) 350°C or be low

• Time (each pins) 3 seconds or less

• Flux Rosin flux containing small amount of chlorine (The flux with a

maximum chlori ne co nt ent of 0.2 Wt% is recomm e nded .)

(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead

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PS2805C-1, PS2805C-4e

R08DS0074EJ0300 Rev.3.00 Page 11 of 12

Jan 9, 2013

(4) Cautions

• Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.

2. Cautions regarding noise

Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-

emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum

ratings.

3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler

Check the setting values before use, since the forward current conditions at CTR measurement differ according to

product.

When using products other than at the specified forward current, the characteristics curves may differ from the

standard curves due to CTR value variations or the like. This tendency may sometimes be obvious, especially below

IF = 1 mA.

Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like

into consideration before use.

USAGE CAUTIONS

1. Protect against static electricity when handling.

2. Avoid storage at a high temperature and high humidity.

PS2805C-1, PS2805C-4e

R08DS0074EJ0300 Rev.3.00 Page 12 of 12

Jan 9, 2013

SPECIFICATION OF VDE MARKS LICENSE DOCUMENT

Parameter Symbol Spec. Unit

Climatic test class (IEC 60068-1/DIN EN 60068-1) 55/100/21

Dielectric strength

maximum operating isolation voltage

Test voltage (partial discharge test, procedure a for type test and random test)

Upr = 1.6 × UIORM, Pd < 5 pC

UIORM

Upr

705

1 128

Vpeak

Test voltage (partial discharge test, procedure b for all devices)

Upr = 1.875 × UIORM, Pd < 5 pC Upr 1 322 Vpeak

Highest permissible overvoltage UTR 6 000 Vpeak

Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) 2

Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) CTI 175

Material group (DIN EN 60664-1 VDE0110 Part 1) III a

Storage temperature range Tstg −55 to +150 °C

Operating temperature range TA −55 to +100 °C

Isolation resistance, minimum value

VIO = 500 V dc at TA = 25°C

VIO = 500 V dc at TA MAX. at least 100°C

Ris MIN.

1012

1011

Safety maximum ratings (maximum permissible in case of fault, see thermal

derating curve)

Package temperature

Current (input current IF, Psi = 0)

Power (output or total power dissipation)

Isolation resistance

VIO = 500 V dc at TA = Tsi

Tsi

Isi

Psi

Ris MIN.

150

300

500

109

°C

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C - 1

Revision History PS2805C-1, PS2805C-4 Data Sheet

Description

Rev. Date Page Summary

1.00 May 30, 2006 − This data sheet was released as PN10611EJ01V0DS

3.00 Jan 9, 2013 Throughout Renesas format is applied to this data sheet.

p.1 The ordering number and safety standards are revised.

p.2

PHOTOCOUPLER CONSTRUCTION is added as eac h distance of this

device.

p.3 The explanation in MARKING EXAMPLE is revised.

p.4

ORDERING INFORMATION is modified with the revision of the safety

standards.

p.5

Turn-on Time (ton) and Turn-off Time (toff) are added to the table in

ELECTRICAL CHARACTERISTICS.

p.6

The graph of DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE

and TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE

are revised

p.7 The graph of LO NG TERM CTR DEGRADATION is deleted.

p.8 PS2805C-1-F4 is delete d form T ape Direction image in TAPING

SPECIFICATIONS.

p.9 PS2805C-4-F4 is delete d form T ape Direction image in TAPING

SPECIFICATIONS.

p.10

The note about temperature c ondition of the recommended solder ing

conditions is deleted.

p.12

The values in SPECIFICATION OF VDE MARKS LICENSE DOCUMENT are

changed as follows.

-- Test voltage is changed from the factor, 1.5, and the value, 1058, to 1.6

and 1128, respectively.

-- Clear ance distance is moved to PHOTOCOUPLER CONSTRUCTION with

changing 5.0 (min.) to 4.5 (min.).

Notice

1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for

the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the

use of these circuits, software, or information.

2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics

assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.

3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or

technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or

others.

4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or

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the product's quality grade, as indicated below.

"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic

equipment; and industrial robots etc.

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Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical

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range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the

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malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the

possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to

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please evaluate the safety of the final products or systems manufactured by you.

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products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes

no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.

9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or

regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the

development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and

regulations and follow the procedures required by such laws and regulations.

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contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics

products.

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12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.

(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.

(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.

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