PNP Silicon Transistors NPN Silicon Epitaxial Planar Transistors Ce = 100mA) for general amplifying and switching purposes Common maximum ele -Veno Prot (Tamb = 25C) T; ratings 100 mA 5V> 300 mW (TO-92) * 125 C (TO-92) 300 mW (TO-18) 4 175 C (TO-18) Common Oamb characteristics <0,33 C/mw (To-92) <0,50 C/mw (TO-18) * Type Maximum Ratings Characteristics at Tomb = 25C Woe = 8V Gee = 5V cle =2mA cle = 10mA (le = 1 mA) f = 100 MHz TO-92 TO-18 Vell Gel-le -Icgo NA Vea Vv Epoxy case -Vcso VV -Vceo Vai V/imA hate Vee sar V mA/mA fr MHz (-lces NA) (-Vce V) BC250A BC260A 20 20 385...100 1/1 (70) <04 30/3 180 < 100 15 BC250B BC260B 20 20 80...250 1/1 (150) <04 30/3 180 < 100 15 BC250C BC260C 20 20 200...600. 1/1 (350) <04 30/3 180 <100 15 BC251A BC261A 45 45 200 5/20 125...260 <06 50/25 200 <50 45 BC251B BC261B 45 45 400 5/20 240...500 <06 50/25 200 <50 45 BC251C BC261C 45 45 600 5/20 450...900 <06 50/25 200 <50 45 BC 252A BC262A 20 20 200 5/20 125...260 <06 50/25 200 <50 20 BC252B BC262B 20 20 400 5/20 240...500 <06 50/25 200 < 50 20 BC 252C BC262C 20 20 600 5/20 450...900 <06 50/2,5 200 < 50 20 BC 253A' BC263A' 20 20 > 40 5/0,01 125...260 <06 50/25 200 <50 20 BC253B BC263B' 20 20 > 40 5/0,01 240...500 100 5/0,01 450...900 <06 50/25 200 <50 20 BC256A BC266A 64 64 200 5/20 125...260 <06 50/25 200 <50 64 BC256B BC266B 64 64 400 5/20 240...500 <06 50/25 200 < 650 64 2N 39622 60 60 ~~ 400...450 5/1 (100...550) <0,4 50/5 200 (< 10) (50) _ 2N 3963? 80 80 700...450 5/1 (100...550) <0,4 50/5 200 (< 10) (70) 2N 39642 45 45 250...600 5/1 (250...700) <0,4 50/5 200 (< 10) (40) _ 2N3965" 60 60 250...600 5/1 (250...700) <0,4 50/5 200 (<10) (50) 1 Low noise type 2 Very low noise type. 3 Leads at Tamb at 2mm from case. 4 2N3962...2N 3965: Ptot = 360 mW, Ti = 200 C, Oamb < 0,48 C/mw 5 2N3962...2N 3965:6V TO-18 Outline Epoxy ~ TO-92 Outline Weight 0,35 p Compatible with TO-18 Collector connected to case Weight 0,23 p E ct 2,5 we] 5S be x om ao ee 1 i x 4 ol $ x w ry Ay max.5,8 = E < c 4 il max.0,5 0,5 Dimensions in mm 23