A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TA = 25 OC
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
VBR IR = 10 µA100 V
CJVR = 10 V f = 1.0 MHz 0.10 pF
RSIF = 20 mA f = 100 MHz 1.0 2.0 Ohms
TLIF = 10 mA IR = 6.0 mA 100 nS
trr IF = 20 mA VR = 10 V 10 nS
SILICON PIN DIODE CHIP
AP1000B-00
PACKAGE STYLE CHP152
0.015”±0.002” S Q .
Anode = Pad
Cathode = Bottom Side
DESCRIPTION:
The AP1000B-00 is a Planar Silicon
PIN Diode Chip Designed for High
Speed Switch and Limiter Applications
Up to 18 GHz.
FEATURES INCLUDE:
•
••
• Low Capaci tance - 0.10 pF Typical
•
••
• Fast Switching - 10 nS Typical
•
••
• SiO2 Passivation
MAXIMUM RATINGS
IF100 mA
VR100 V
PDISS 0.5 W @ T A = 25 OC
TJ-65 OC to +150 OC
TSTG -65 OC to +150 OC
θ
θθ
θJC 50 OC/W
0.002” ±0.001”
