Rev: 1.00 3/2002 1/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
1M x 18, 512K x 32, 512K x 36
18Mb Sync Burst SRAMs
300 MHz–200 MHz
1.8 V or 2.5 V VDD
1.8 V or 2.5 V I/O
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• 1.8 V or 2.5 V +10%/–10% core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
Functional Description
Applications
The GS816019/33/37AT is a 18,874,368-bit (16,777,216-bit
for x32 version) high performance synchronous SRAM with a
2-bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main
store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS816019/33/37AT operates on a 1.8 V or 2.5 V power
supply. All inputs are 2.5 V and 1.8 V compatible. Separate
output power (VDDQ) pins are used to decouple output noise
from the internal circuits and are 2.5 V and 1.8 V compatible.
-300 -275 -250 -225 -200 Unit
Pipeline
3-1-1-1 tKQ
tCycle 1.7
3.3 1.9
3.6 2.0
4.0 2.2
4.4 2.5
5.0 ns
ns
2.5 V Curr (x18)
Curr (x32/x36)
320
375 300
345 275
320 250
295 230
265 mA
mA
1.8 V Curr (x18)
Curr (x32/x36)
320
370 300
340 275
315 250
285 225
260 mA
mA
Rev: 1.00 3/2002 2/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
GS816019A 100-Pin TQFP Pinout
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
VDDQ
VSS
DQB1
DQB2
VSS
VDDQ
DQB3
DQB4
VDD
NC
VSS
DQB5
DQB6
VDDQ
VSS
DQB7
DQB8
DQB9
VSS
VDDQ
VDDQ
VSS
DQA8
DQA7
VSS
VDDQ
DQA6
DQA5
VSS
NC
VDD
ZZ
DQA4
DQA3
VDDQ
VSS
DQA2
DQA1
VSS
VDDQ
LBO
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
A18
A17
A10
A11
A12
A13
A14
A16
A6
A7
E1
E2
NC
NC
BB
BA
E3
CK
GW
BW
VDD
VSS
G
ADSC
ADSP
ADV
A8
A9
A15
1M x 18
Top View
DQA9
A19
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC
Rev: 1.00 3/2002 3/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
GS816033A 100-Pin TQFP Pinout
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
VDDQ
VSS
DQC4
DQC3
VSS
VDDQ
DQC2
DQC1
VDD
NC
VSS
DQD1
DQD2
VDDQ
VSS
DQD3
DQD4
DQD5
VSS
VDDQ
VDDQ
VSS
DQB4
DQB3
VSS
VDDQ
DQB2
DQB1
VSS
NC
VDD
ZZ
DQA1
DQA2
VDDQ
VSS
DQA3
DQA4
VSS
VDDQ
LBO
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
A18
A17
A10
A11
A12
A13
A14
A16
A6
A7
E1
E2
BD
BC
BB
BA
E3
CK
GW
BW
VDD
VSS
G
ADSC
ADSP
ADV
A8
A9
A15
512K x 32
Top View
DQB5
NC
DQB7
DQB8
DQB6
DQA6
DQA5
DQA8
DQA7
NC
DQC7
DQC8
DQC6
DQD6
DQD8
DQD7
NC
DQC5
NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC
Rev: 1.00 3/2002 4/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
GS816037A 100-Pin TQFP Pinout
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
VDDQ
VSS
DQC4
DQC3
VSS
VDDQ
DQC2
DQC1
VDD
NC
VSS
DQD1
DQD2
VDDQ
VSS
DQD3
DQD4
DQD5
VSS
VDDQ
VDDQ
VSS
DQB4
DQB3
VSS
VDDQ
DQB2
DQB1
VSS
NC
VDD
ZZ
DQA1
DQA2
VDDQ
VSS
DQA3
DQA4
VSS
VDDQ
LBO
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
A18
A17
A10
A11
A12
A13
A14
A16
A6
A7
E1
E2
BD
BC
BB
BA
E3
CK
GW
BW
VDD
VSS
G
ADSC
ADSP
ADV
A8
A9
A15
512K x 36
Top View
DQB5
DQB9
DQB7
DQB8
DQB6
DQA6
DQA5
DQA8
DQA7
DQA9
DQC7
DQC8
DQC6
DQD6
DQD8
DQD7
DQD9
DQC5
DQC9 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC
Rev: 1.00 3/2002 5/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
TQFP Pin Description
Pin Location Symbol Type Description
37, 36 A0, A1IAddress field LSBs and Address Counter preset Inputs
35, 34, 33, 32, 100, 99, 82, 81, 44, 45, 46,
47, 48, 49, 50, 43, 42 A2–A18 IAddress Inputs
80 A19 IAddress Inputs (x18 versions)
63, 62, 59, 58, 57, 56, 53, 52
68, 69, 72, 73, 74, 75, 78, 79
13, 12, 9, 8, 7, 6, 3, 2
18, 19, 22, 23, 24, 25, 28, 29
DQA1–DQA8
DQB1–DQB8
DQC1–DQC8
DQD1–DQD8
I/O Data Input and Output pins (x32, x36 Version)
51, 80, 1, 30 DQA9, DQB9,
DQC9, DQD9 I/O Data Input and Output pins (x36 Version)
51, 80, 1, 30 NC No Connect (x32 Version)
58, 59, 62, 63, 68, 69, 72, 73, 74
8, 9, 12, 13, 18, 19, 22, 23, 24 DQA1–DQA9
DQB1–DQB9 I/O Data Input and Output pins (x18 Version)
51, 52, 53, 56, 57
75, 78, 79, 95, 96,
1, 2, 3, 6, 7,
25, 28, 29, 30
NC —No Connect (x18 Version)
87 BW IByte Write—Writes all enabled bytes; active low
93, 94 BA, BBIByte Write Enable for DQA, DQB Data I/Os; active low
95, 96 BC, BDIByte Write Enable for DQC, DQD Data I/Os; active low
(x32, x36 Version)
89 CK IClock Input Signal; active high
88 GW IGlobal Write Enable—Writes all bytes; active low
98, 92 E1, E3IChip Enable; active low
97 E2IChip Enable; active high
86 GIOutput Enable; active low
83 ADV IBurst address counter advance enable; active low
84, 85 ADSP, ADSC IAddress Strobe (Processor, Cache Controller); active low
64 ZZ ISleep Mode control; active high
31 LBO ILinear Burst Order mode; active low
15, 41, 65, 91 VDD ICore power supply
5,10,17, 21, 26, 40, 55, 60, 67, 71, 76, 90 VSS II/O and Core Ground
4, 11, 20, 27, 54, 61, 70, 77 VDDQ IOutput driver power supply
14, 16, 38, 39, 66 NC —No Connect
Rev: 1.00 3/2002 6/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
GS816019/33/37A Block Diagram
A1
A0 A0
A1 D0
D1 Q1
Q0
Counter
Load
DQ
DQ
Register
Register
DQ
Register
DQ
Register
DQ
Register
DQ
Register
DQ
Register
DQ
Register
DQ
Register
DQ
Register
A0–An
LBO
ADV
CK
ADSC
ADSP
GW
BW
E1
G
ZZ Power Down
Control
Memory
Array
36 36
4
A
QD
E2
E3
DQx1–DQx9
Note: Only x36 version shown for simplicity.
1
BA
BB
BC
BD
1
Rev: 1.00 3/2002 7/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
Note:
Thereis a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in the default states as specified in the
above tables.
Burst Counter Sequences
BPR 1999.05.18
Byte Write Truth Table
Notes:
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes.
3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
4. Bytes “C” and “D” are only available on the x32 and x36 versions.
Mode Pin Functions
Mode Name Pin
Name State Function
Burst Order Control LBO LLinear Burst
HInterleaved Burst
Power Down Control ZZ L or NC Active
H Standby, IDD = ISB
Function GW BW BABBBCBDNotes
Read H H XXXX1
Read HLHHHH1
Write byte a HL L HHH2, 3
Write byte b HLHLH H 2, 3
Write byte c HLH H LH2, 3, 4
Write byte d HLHHHL2, 3, 4
Write all bytes HLLLLL2, 3, 4
Write all bytes LXXXXX
Linear Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
I
nterleaved Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
A[1:0] A[1:0] A[1:0] A[1:0]
1st address 00 01 10 11
2nd address 01 10 11 00
3rd address 10 11 00 01
4th address 11 00 01 10
A[1:0] A[1:0] A[1:0] A[1:0]
1st address 00 01 10 11
2nd address 01 00 11 10
3rd address 10 11 00 01
4th address 11 10 01 00
Rev: 1.00 3/2002 8/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
Synchronous Truth Table
Operation Address
Used
State
Diagram
Key5E1E2ADSP ADSC ADV W3DQ4
Deselect Cycle, Power Down None XHX X LX X High-Z
Deselect Cycle, Power Down None XLFLX X X High-Z
Deselect Cycle, Power Down None XL F HLX X High-Z
Read Cycle, Begin Burst External RLTLX X X Q
Read Cycle, Begin Burst External RL T HLXFQ
Write Cycle, Begin Burst External WL T HLXTD
Read Cycle, Continue Burst Next CR X X H H LFQ
Read Cycle, Continue Burst Next CR HX X HLFQ
Write Cycle, Continue Burst Next CW X X H H LTD
Write Cycle, Continue Burst Next CW HX X HLTD
Read Cycle, Suspend Burst Current X X H H H FQ
Read Cycle, Suspend Burst Current HX X H H FQ
Write Cycle, Suspend Burst Current X X H H H TD
Write Cycle, Suspend Burst Current HX X H H TD
Notes:
1. X = Don’t Care, H = High, L = Low
2. E = T (True) if E2 = 1 and E3 = 0; E = F (False) if E2 = 0 or E3 = 1
3. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
4. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
5. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
6. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above.
7. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.
Rev: 1.00 3/2002 9/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
First Write First Read
Burst Write Burst Read
Deselect
R
W
CRCW
X
X
WR
R
WR
XX
X
Simple Synchronous OperationSimple Burst Synchronous Operation
CR
R
CW CR
CR
Simplified State Diagram
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1, E2, and E3) and Write (BA, BB, BC, BD, BW, and GW)
control inputs, and that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
Rev: 1.00 3/2002 10/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
First Write First Read
Burst Write Burst Read
Deselect
R
W
CRCW
X
X
WR
R
WR
X
X
X
CR
R
CW CR
CR
W
CW
W
CW
Simplified State Diagram with G
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
Rev: 1.00 3/2002 11/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol Description Value Unit
VDD Voltage on VDD Pins –0.5 to 3.6 V
VDDQ Voltage in VDDQ Pins –0.5 to 3.6 V
VCK Voltage on Clock Input Pin –0.5 to 3.6 V
VI/O Voltage on I/O Pins –0.5 to VDDQ +0.5 (≤ 3.6 V max.) V
VIN Voltage on Other Input Pins –0.5 to VDD +0.5 (≤ 3.6 V max.) V
IIN Input Current on Any Pin +/–20 mA
IOUT Output Current on Any I/O Pin +/–20 mA
PDPackage Power Dissipation 1.5 W
TSTG Storage Temperature –55 to 125 oC
TBIAS Temperature Under Bias –55 to 125 oC
Rev: 1.00 3/2002 12/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
Power Supply Voltage Ranges
Parameter Symbol Min. Typ. Max. Unit Notes
2.5 V Supply Voltage VDD2 2.3 2.5 2.7 V
1.8 V Supply Voltage VDD1 1.6 1.8 2.0 V
2.5 V VDDQ I/O Supply Voltage VDDQ2 2.3 2.5 2.7 V
1.8 V VDDQ I/O Supply Voltage VDDQ1 1.6 1.8 2.0 V
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
VDDQ2 Range Logic Levels
Parameter Symbol Min. Typ. Max. Unit Notes
VDD Input High Voltage VIH 0.6*VDD —VDD + 0.3 V1
VDD Input Low Voltage VIL –0.3 —0.3*VDD V1
VDDQ I/O Input High Voltage VIHQ 0.6*VDD —VDDQ + 0.3 V1,3
VDDQ I/O Input Low Voltage VILQ –0.3 —0.3*VDD V1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
VDDQ1 Range Logic Levels
Parameter Symbol Min. Typ. Max. Unit Notes
VDD Input High Voltage VIH 0.6*VDD —VDD + 0.3 V1
VDD Input Low Voltage VIL –0.3 —0.3*VDD V1
VDDQ I/O Input High Voltage VIHQ 0.6*VDD —VDDQ + 0.3 V1,3
VDDQ I/O Input Low Voltage VILQ –0.3 —0.3*VDD V1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Rev: 1.00 3/2002 13/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
Note: These parameters are sample tested.
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
Recommended Operating Temperatures
Parameter Symbol Min. Typ. Max. Unit Notes
Ambient Temperature (Commercial Range Versions) TA0 25 70 °C2
Ambient Temperature (Industrial Range Versions) TA–40 25 85 °C2
Note:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)
Parameter Symbol Test conditions Typ. Max. Unit
Input Capacitance CIN VIN = 0 V 4 5 pF
Input/Output Capacitance CI/O VOUT = 0 V 6 7 pF
Package Thermal Characteristics
Rating Layer Board Symbol Max Unit Notes
Junction to Ambient (at 200 lfm) single RΘJA 40 °C/W 1,2
Junction to Ambient (at 200 lfm) four RΘJA 24 °C/W 1,2
Junction to Case (TOP) —RΘJC 9°C/W 3
20% tKC
V
SS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing Overshoot Measurement and Timing
20% tKC
VDD + 2.0 V
50%
VDD
VIL
Rev: 1.00 3/2002 14/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
AC Test Conditions
Parameter Conditions
Input high level VDD – 0.2 V
Input low level 0.2 V
Input slew rate 1 V/ns
Input reference level VDD/2
Output reference level VDDQ/2
Output load Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig.
1 unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
DC Electrical Characteristics
Parameter Symbol Test Conditions Min Max
Input Leakage Current
(except mode pins) IIL VIN = 0 to VDD –1 uA 1 uA
ZZ Input Current IIN1VDD ≥ VIN ≥ VIH
0 V ≤ VIN ≤ VIH
–1 uA
–1 uA 1 uA
100 uA
Output Leakage Current IOL Output Disable, VOUT = 0 to VDD –1 uA 1 uA
Output High Voltage VOH2 IOH = –8 mA, VDDQ = 2.3 V VDDQ – 0.4 V —
Output High Voltage VOH1 IOH = –4 mA, VDDQ = 1.6 V VDDQ – 0.4 V —
Output Low Voltage VOL2 IOL = 8 mA, VDD = 2.3 V —0.4 V
Output Low Voltage VOL1 IOL = 4 mA, VDD = 1.6 V —0.4 V
DQ
VDDQ/2
50Ω30pF*
Output Load 1
* Distributed Test Jig Capacitance
Rev: 1.00 3/2002 15/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
Operating Currents
Notes:
1. IDD and IDDQ apply to any combination of VDD3, VDD2, VDDQ3, and VDDQ2 operation.
2. All parameters listed are worst case scenario.
Parameter Test Conditions Mode Symbol
-300 -275 -250 -225 -200
Unit
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
Operating
Current
2.5 V
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
(x32/
x36) Pipeline IDD
IDDQ
345
30 355
30 315
30 325
30 290
30 600
60 265
30 275
30 240
25 250
25 mA
(x18) Pipeline IDD
IDDQ
305
15 315
15 285
15 295
15 260
15 270
15 235
15 245
15 215
15 225
15 mA
Operating
Current
1.8 V
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
(x32/
x36) Pipeline IDD
IDDQ
345
25 355
25 315
25 325
25 290
25 300
25 265
20 275
20 240
20 250
20 mA
(x18) Pipeline IDD
IDDQ
305
15 315
15 285
15 295
15 260
15 270
15 235
15 245
15 215
10 225
10 mA
Standby
Current ZZ ≥ VDD – 0.2 V —Pipeline ISB 35 45 35 45 35 45 35 45 35 45 mA
Deselect
Current
Device Deselected;
All other inputs
≥ VIH or ≤ VIL
—Pipeline IDD 95 100 90 95 85 90 80 85 75 80 mA
Rev: 1.00 3/2002 16/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
AC Electrical Characteristics
Notes:
1. These parameters are sampled and are not 100% tested.
2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter Symbol -300 -275 -250 -225 -200 Unit
Min Max Min Max Min Max Min Max Min Max
Pipeline
Clock Cycle Time tKC 3.3 —3.6 —4.0 —4.4 —5.0 —ns
Clock to Output Valid tKQ —1.7 —1.9 —2.0 —2.2 —2.5 ns
Clock to Output Invalid tKQX 1.0 —1.0 —1.0 —1.0 —1.0 —ns
Clock to Output in Low-Z tLZ11.0 —1.0 —1.0 —1.0 —1.0 —ns
Clock HIGH Time tKH 1.0 —1.3 —1.3 —1.3 —1.3 —ns
Clock LOW Time tKL 1.2 —1.5 —1.5 —1.5 —1.5 —ns
Clock to Output in
High-Z tHZ11.0 1.3 1.0 2.0 1.0 2.0 1.0 2.2 1.0 2.5 ns
G to Output Valid tOE —1.7 —1.7 —1.8 —2.0 —2.5 ns
G to output in Low-Z tOLZ10—0—0—0—0—ns
G to output in High-Z tOHZ1—1.5 —1.8 —1.8 —2.0 —2.5 ns
Setup time tS 1.1 —1.2 —1.2 —1.3 —1.4 —ns
Hold time tH 0.1 —0.2 —0.2 —0.3 —0.4 —ns
ZZ setup time tZZS25—5—5—5—5—ns
ZZ hold time tZZH21—1—1—1—1—ns
ZZ recovery tZZR 20 —20 —20 —20 —20 —ns
Rev: 1.00 3/2002 17/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
CK
ADSP
ADSC
ADV
GW
BW
G
WR2 WR3
WR1
WR1 WR2 WR3
tKC
Single Write Burst Write
D2AD2BD2CD2DD3A
D1A
tKL
tKH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH Write specified byte for 2A and all bytes for 2B, 2C& 2D
ADV must be inactive for ADSP Write
ADSC initiated write
ADSP is blocked by E inactive
A0–An
BA–BD
DQA–DQD
Write Deselected
Hi-Z
WR1 WR2 WR3
Write Cycle Timing
E1
E3
tS tH
tS tH
tS tH E2 and E3 only sampled with ADSP or ADSC
E1 masks ADSP
E2
Deselected with E2
Rev: 1.00 3/2002 18/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
Pipelined SCD Read Cycle Timing
Q1AQ3A
Q2D
Q2c
Q2B
Q2A
tKQ
tLZ
tOE
tOHZ
tOLZ tKQX
tHZ
tKQX
CK
ADSP
ADSC
BW
G
GW
ADV
Burst Read
RD2 RD3
tKL
tS tH
tH
tS tH
tS tH
ADSC initiated read
Suspend Burst
Single Read
ADSP is blocked by E inactive
A0–An
BWA–BWD
tKH tKC
tS tH
tS
tS
tH
DQA–DQD
RD1
Hi-Z
E2tS
tH
tH
tH
E1 masks ADSP
E2 and E3 only sampled with ADSP or ADSC Deselected with E2
E3
E1
tS
tS
Rev: 1.00 3/2002 19/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
CK
ADSP
ADV
GW
BW
G
Q1AD1AQ2AQ2Bb Q2c Q2D
Single Read Burst Read
tOE tOHZ
tS tH
tS tH
tH
tS tH
tS tH
tKH
DQA–DQD
BWA–BWD
tKL
tKC
tS
Single Write
ADSP is blocked by E inactive
tKQ tS tH
Hi-Z
Pipelined SCD Read-Write Cycle Timing
WR1
E1
E3
E2
tS
tS tH
tS
E1 masks ADSP
E2 and E3 only sampled with ADSP and ADSC
Deselected with E3
tH
tH
RD1 WR1 RD2
tS tH
A0–An
ADSC
tS tH ADSC initiated read
Rev: 1.00 3/2002 20/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high,
the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
low, the SRAM operates normally after ZZ recovery time.
Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of
Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become
disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.
When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending
operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated
until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands
may be applied while the SRAM is recovering from Sleep mode.
Application Tips
Single and Dual Cycle Deselect
SCD devices (like this one) force the use of “dummy read cycles” (read cycles that are launched normally but that are ended with
the output drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance but their use usually
assures there will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste
bandwidth on dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at
bank address boundary crossings) but greater care must be exercised to avoid excessive bus contention.
CK
ADSP
ADSC
tH tKH tKL
tKC
tS
ZZ tZZR
tZZH
tZZS
~
~
~
~~
~~
~~
~~
~
Snooze
Sleep Mode Timing Diagram
~
~
~
~
~
~
~
~
~
~
Rev: 1.00 3/2002 21/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
TQFP Package Drawing
D1
D
E1
E
Pin 1
b
e
c
L
L1
A2
A1
Y
θ
Notes:
1. All dimensions are in millimeters (mm).
2. Package width and length do not include mold protrusion.
Symbol Description Min. Nom. Max
A1 Standoff 0.05 0.10 0.15
A2 Body Thickness 1.35 1.40 1.45
bLead Width 0.20 0.30 0.40
cLead Thickness 0.09 —0.20
DTerminal Dimension 21.9 22.0 22.1
D1 Package Body 19.9 20.0 20.1
ETerminal Dimension 15.9 16.0 16.1
E1 Package Body 13.9 14.0 14.1
eLead Pitch —0.65 —
LFoot Length 0.45 0.60 0.75
L1 Lead Length —1.00 —
YCoplanarity 0.10
θLead Angle 0°—7°
Rev: 1.00 3/2002 22/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
Ordering Information for GSI Synchronous Burst RAMs
Org Part Number1Type Package Speed2
(MHz) TA3Status
1M x 18 GS816019AT-300 Pipeline TQFP 300 C
1M x 18 GS816019AT-275 Pipeline TQFP 275 C
1M x 18 GS816019AT-250 Pipeline TQFP 250 C
1M x 18 GS816019AT-225 Pipeline TQFP 225 C
1M x 18 GS816019AT-200 Pipeline TQFP 200 C
512K x 32 GS816033AT-300 Pipeline TQFP 300 C
512K x 32 GS816033AT-275 Pipeline TQFP 275 C
512K x 32 GS816033AT-250 Pipeline TQFP 250 C
512K x 32 GS816033AT-225 Pipeline TQFP 225 C
512K x 32 GS816033AT-200 Pipeline TQFP 200 C
512K x 36 GS816037AT-300 Pipeline TQFP 300 C
512K x 36 GS816037AT-275 Pipeline TQFP 275 C
512K x 36 GS816037AT-250 Pipeline TQFP 250 C
512K x 36 GS816037AT-225 Pipeline TQFP 225 C
512K x 36 GS816037AT-200 Pipeline TQFP 200 C
1M x 18 GS816019AT-300I Pipeline TQFP 300 I
1M x 18 GS816019AT-275I Pipeline TQFP 275 I
1M x 18 GS816019AT-250I Pipeline TQFP 250 I
1M x 18 GS816019AT-225I Pipeline TQFP 225 I
1M x 18 GS816019AT-200I Pipeline TQFP 200 I
512K x 32 GS816033AT-300I Pipeline TQFP 300 I
512K x 32 GS816033AT-275I Pipeline TQFP 275 I
512K x 32 GS816033AT-250I Pipeline TQFP 250 I
512K x 32 GS816033AT-225I Pipeline TQFP 225 I
512K x 32 GS816033AT-200I Pipeline TQFP 200 I
512K x 36 GS816037AT-300I Pipeline TQFP 300 I
512K x 36 GS816037AT-275I Pipeline TQFP 275 I
512K x 36 GS816037AT-250I Pipeline TQFP 250 I
512K x 36 GS816037AT-225I Pipeline TQFP 225 I
512K x 36 GS816037AT-200I Pipeline TQFP 200 I
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS816019AT-200IT.
2. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range.
3. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which
are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 1.00 3/2002 23/23 © 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS816019/33/37AT-300/275/250/225/200
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New Types of Changes
Format or Content Page;Revisions;Reason
816019A_r1 • Creation of new datasheet
