2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm * Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) * High-speed switching time: tstg = 1.0 s (typ.) * Small flat package * PC = 1.0 to 2.0 W (mounted on a ceramic substrate) * Complementary to 2SA1213 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.4 A PC 500 Collector power dissipation PC (Note 1) Junction temperature Storage temperature range 1000 JEDEC mW Tj 150 C Tstg -55 to 150 C JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm2 x 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1980-03 1 2013-11-01 2SC2873 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 0.1 A Emitter cut-off current IEBO VEB = 5 V, IC = 0 0.1 A V (BR) CEO IC = 10 mA, IB = 0 50 V VCE = 2 V, IC = 0.5 A 70 240 hFE (2) VCE = 2 V, IC = 2.0 A 20 Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 0.05 A 0.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 0.05 A 1.2 V fT VCE = 2 V, IC = 0.5 A 120 MHz VCB = 10 V, IE = 0, f = 1 MHz 30 pF 0.1 1.0 0.1 hFE (1) DC current gain (Note 3) Transition frequency Collector output capacitance Turn-on time Storage time Switching time Cob ton tstg 20 s INPUT IB1 IB1 IB2 OUTPUT 30 Collector-emitter breakdown voltage s IB2 Fall time tf IB1 = -IB2 = 0.05 A, DUTY CYCLE 1% Note 3: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking Part No. (or abbreviation code) M Characteristics indicator Note.4 Lot No. Note 4 : A line beside a Lot No. identifies the indication of product Labels. Without a line: [[Pb]]/INCLUDES > MCV With a line : [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 2SC2873 VCE - IC VCE - IC 1.6 1.6 VCE (V) Ta = 100C 1.2 0.8 IB = 3 mA 5 10 20 30 0.4 0 0 Collector-emitter voltage Collector-emitter voltage VCE (V) Common emitter 40 50 0.4 0.8 1.2 1.6 Collector current IC Common emitter Ta = 25C 1.2 0.8 40 0.4 1.2 2.0 (A) hFE - IC Common emitter Common emitter 1.2 0.8 IB = 5 mA 10 20 30 0.4 VCE = 2 V 500 Ta = -55C 300 Ta = 100C 25 100 -55 50 30 40 10 10 50 0.4 0.8 1.2 Collector current IC 1.6 30 100 300 Collector current IC 2.0 1000 3000 (mA) (A) VCE (sat) - IC VBE (sat) - IC 1 10 Common emitter Common emitter Base-emitter saturation voltage VBE (sat) (V) IC/IB = 20 0.5 0.3 0.1 Ta = 100C 0.05 0.03 25 -55 0.01 10 1.6 1000 DC current gain hFE VCE (V) Collector-emitter voltage 0.8 Collector current IC VCE - IC Collector-emitter saturation voltage VCE (sat) (V) 20 30 (A) 1.6 0 0 10 0.4 0 0 2.0 IB = 5 mA 30 100 300 Collector current IC 1000 3 (mA) Ta = -55C 1 0.5 25 100 0.3 0.1 10 3000 IC/IB = 20 5 30 100 300 Collector current IC 3 1000 3000 (mA) 2013-11-01 2SC2873 IC - VBE Safe Operating Area 2.0 5000 IC max (pulse)* IC max (continuous) 3000 Common emitter (mA) 1.5 Ta = 100C 25 -55 Collector current IC Collector current IC (A) VCE = 2 V 1.0 0.5 1 ms* 10 ms* 100 ms* 1000 1 S* 500 300 DC operation Ta = 25C 100 50 30 *: Single no repetitive pulse Ta = 25C Curves must be derated linearly 0 0 0.4 0.8 1.2 Base-emitter voltage 1.6 10 2.0 with increase in temperature Tested without a substrate 5 0.1 VBE (V) 0.3 1 3 Collector-emitter voltage VCEO max 10 30 100 VCE (V) PC - Ta 1.0 (1) Mounted on a ceramic (1) substrate (250 mm2 x 0.8 t) Collector power dissipation PC (W) 1.2 (2) No heat sink 0.8 0.6 (2) 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 4 2013-11-01 2SC2873 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. 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