SILICON PLANAR NPN ULTRA HIGH-SPEED SATURATED SWITCHES The 2N 709 and 2N 3010 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are designed for switching applications up to 50 mA. ABSOLUTE MAXIMUM RATINGS 2N 709 | 2N 3010 Veso Voces Vceo Veso le Prot Tstge Tj Collector-base voltage (l~ = 0) Collector-emitter voltage (Vge= 0) Collector-emitter voltage (Ig = 0} Emitter-base voltage (1c = 0) Collector current Total power dissipation at Tamp & 25C at Tease & 100C Storage and junction temperature 15V 15V _ 11V Sv | 6v 4v 50 mA 0.3 W 0.5 W -65 to 200C MECHANICAL DATA collector connected to case 225 ll Dimensions in mm (sim. to TO-18) 7/76 THERMAL DATA Rt j-case Thermal resistance junction-case max 200 C/W th -amb Thermal resistance junction-ambient max 583 C/W ELECTRICAL CHARACTERISTICS (Ta np= 25C unless otherwise specified) Parameter Test conditions Min. Typ. Max.| Unit leBo Collector cutoff Vega 5V 50| nA current (le = 0) Vea= 5V Tamp = 125C 5) vA (for 2N 709 only) loes Collector cutoff Vee= 5V 100} nA current (Vge= 0) Vce= 5V Tamp= 85C 5) UA (for 2N 3010 only} Visryceo Collector-base le =10pRA 15 Vv breakdown voltage (le = 0) Viaryces Collector-emitter le =10UA 11 Vv breakdown voltage (Vee= 0) (for 2N 3010 only) V ceo (sus) Collector-emitter Ig =10mA 6 Vv sustaining voltage (lp = 0) VierjeBo Emitter-base le =10pRA 4 Vv breakdown voltage (le =0) Vee gaty Collector-emitter for 2N 709 saturation voltage lc =3mA lg =0.15mA 0.3| V for 2N 3010 Ilo =imA lg =0.1 mA 0.25) V le =10mA lg=1mMmA 0.25| V lg =30mA lp = 3mA 0.38 =V 226 ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max.) Unit Vee (saty) Base-emitter saturation voltage for 2N 709 le =3mA lg =0.15mA |0.7 0.85] V for 2N 3010 lc =1mA Ig =0.1mA_ 0.68 0.85] V le=10mA Ig=1mA 0.75 0.95] V le =30mMA Itgz3mA 1.3] V hee* DC current gain for 2N 709 le =10MA Vee=0.5V |20 120); 16 =30mA Vce= iV 15 _ lo =10mA Vee= 0.5V Tamp= -25C 10 - for 2N 3010 le =imA Vee= 0.4V 15 _ le=10mMA Vee=0.4V {25 125) le =30mA Vee=1V 15 ~ fr Transition frequency Vece=4V f = 100 MHz =5mA for 2N 709 600 MHz le =10mA_ for 2N 3010 |600 MHz Cego Emitter-base c= Vep= 0.5V Capacitance f= 1 MHz 2) pF Ceogo Collector-base ip =0 Vea= BV Capacitance f = 1 MHz 3| pF ts Storage time le =5mA Vec=3V lgi=-lg2=5mA 6] ns ton Turn-on time le =10mMA Vec=1V lp,;=2mA for 2N 709 15] ns for 2N 3010 121 ns tort Turn-off time lc =10mMA Vec=1V lgi=-lgo= 1 mA for 2N 709 15} ns for 2N 3010 12| ns * Pulsed: pulse duration = 300 us, duty cycle = 1% 227