BZD27C3V6P-M to BZD27C200P-M
Document Number 83307
Rev. 1.0, 01-Apr-10
Vishay Semiconductors
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1
17249
For technical support, please contact: DiodesSSP@vishay.com
Zener Diodes with Surge Current Specification
Features
Sillicon planar zener diodes
Low profile surface-mount package
Zener and surge current specification
Low leakage current
Excellent stability
High temperature soldering: 260 °C/10 s
at terminals
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
Mechanical Data
Case: DO-219AB (SMF)
Weight: approx. 15 mg
Packaging codes/options:
18/10 k per 13 " reel (8 mm tape), 10 k/box
08/3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Note:
1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 µm thick)
2) TJ = 25 °C prior to surge
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Note:
1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 µm thick)
Parameter Test condition Symbol Value Unit
Power dissipation
TL = 80 °C Ptot 2.3 W
TA = 25 °C Ptot 0.8 1) W
Non-repetitive peak pulse power
dissipation
100 μs square pulse 2) PZSM 300 W
10/1000 μs waveform (BZD27-C7V5P-M to BZD27-C100P-M) 2) PRSM 150 W
10/1000 μs waveform (BZD27-C110P-M to BZD27-C200P-M) 2) PRSM 100 W
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air 1) RthJA 180 K/W
Thermal resistance junction to lead RthJL 30 K/W
Maximum junction temperature Tj150 °C
Storage temperature range TS- 55 to + 150 °C
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Document Number 83307
Rev. 1.0, 01-Apr-10
BZD27C3V6P-M to BZD27C200P-M
Vishay Semiconductors
For technical support, please contact: DiodesSSP@vishay.com
Electrical Characteristics
Maximum VF = 1.2 V, at IF = 0.2 A
When used as voltage regulator diodes (TJ = 25 °C, unless otherwise specified)
Note:
1) Pulse test: tp 5 ms.
Part number Marking
code
Working voltage 1) Differential
resistance
Temperature
coefficient
Te s t
current
Reverse current at
reverse voltage
VZ at IZT rdif at IZαZ at IZIZT IRVR
VΩ%/°C mA μA V
min. max. typ. max. min. max. max.
BZD27C3V6P-M N0 3.4 3.8 4 8 - 0.14 - 0.04 100 100 1
BZD27C3V9P-M N1 3.7 4.1 4 8 - 0.14 - 0.04 100 50 1
BZD27C4V3P-M N2 4 4.6 4 7 - 0.12 - 0.02 100 25 1
BZD27C4V7P-M N3 4.4 5 3 7 - 0.1 0 100 10 1
BZD27C5V1P-M N4 4.8 5.4 3 6 - 0.08 0.02 100 5 1
BZD27C5V6P-M N5 5.2 6 2 4 - 0.04 0.04 100 10 2
BZD27C6V2P-M N6 5.8 6.6 2 3 - 0.01 0.06 100 5 2
BZD27C6V8P-M N7 6.4 7.2 1 3 0 0.07 100 10 3
BZD27C7V5P-M N8 7 7.9 1 2 0 0.07 100 50 3
BZD27C8V2P-M N9 7.7 8.7 1 2 0.03 0.08 100 10 3
BZD27C9V1P-M O0 8.5 9.6 2 4 0.03 0.08 50 10 5
BZD27C10P-M O1 9.4 10.6 2 4 0.05 0.09 50 7 7.5
BZD27C11P-M O2 10.4 11.6 4 7 0.05 0.1 50 4 8.2
BZD27C12P-M O3 11.4 12.7 4 7 0.05 0.1 50 3 9.1
BZD27C13P-M O4 12.4 14.1 5 10 0.05 0.1 50 2 10
BZD27C15P-M O5 13.8 15.6 5 10 0.05 0.1 50 1 11
BZD27C16P-M O6 15.3 17.1 6 15 0.06 0.11 25 1 12
BZD27C18P-M O7 16.8 19.1 6 15 0.06 0.11 25 1 13
BZD27C20P-M O8 18.8 21.2 6 15 0.06 0.11 25 1 15
BZD27C22P-M O9 20.8 23.3 6 15 0.06 0.11 25 1 16
BZD27C24P-M P0 22.8 25.6 7 15 0.06 0.11 25 1 18
BZD27C27P-M P1 25.1 28.9 7 15 0.06 0.11 25 1 20
BZD27C30P-M P2 28 32 8 15 0.06 0.11 25 1 22
BZD27C33P-M P3 31 35 8 15 0.06 0.11 25 1 24
BZD27C36P-M P4 34 38 21 40 0.06 0.11 10 1 27
BZD27C39P-M P5 37 41 21 40 0.06 0.11 10 1 30
BZD27C43P-M P6 40 46 24 45 0.07 0.12 10 1 33
BZD27C47P-M P7 44 50 24 45 0.07 0.12 10 1 36
BZD27C51P-M P8 48 54 25 60 0.07 0.12 10 1 39
BZD27C56P-M P9 52 60 25 60 0.07 0.12 10 1 43
BZD27C62P-M Q0 58 66 25 80 0.08 0.13 10 1 47
BZD27C68P-M Q1 64 72 25 80 0.08 0.13 10 1 51
BZD27C75P-M Q2 70 79 30 100 0.08 0.13 10 1 56
BZD27C82P-M Q3 77 87 30 100 0.08 0.13 10 1 62
BZD27C91P-M Q4 85 96 60 200 0.08 0.13 5 1 68
BZD27C100P-M Q5 94 106 60 200 0.09 0.13 5 1 75
BZD27C110P-M Q6 104 116 80 250 0.09 0.13 5 1 82
BZD27C120P-M Q7 114 127 80 250 0.09 0.13 5 1 91
BZD27C130P-M Q8 124 141 110 300 0.09 0.13 5 1 100
BZD27C150P-M Q9 138 156 130 300 0.09 0.13 5 1 110
BZD27C160P-M R0 153 171 150 350 0.09 0.13 5 1 120
BZD27C180P-M R1 168 191 180 400 0.09 0.13 5 1 130
BZD27C200P-M R2 188 212 200 500 0.09 0.13 5 1 150
BZD27C3V6P-M to BZD27C200P-M
Document Number 83307
Rev. 1.0, 01-Apr-10
Vishay Semiconductors
www.vishay.com
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For technical support, please contact: DiodesSSP@vishay.com
Electrical Characteristics
When used as protection diodes (TJ = 25 °C, unless otherwise specified)
Note:
1) Non-repetitive peak reverse current in accordance with "IEC 60-1, section 8" (10/1000 μs pulse); see fig. 5.
Part number
Rev.
breakdown
voltage
Test current Temperature coefficient Clamping voltage Reverse current at
stand-off voltage
V(BR)R at
Itest
Itest αZ at Itest VCat IRSM 1) IRat VWM
VmA %/°C V A μA V
min. min. max. max . max.
BZD27C7V5P-M 7 100 0 0.07 11.3 13.3 1500 6.2
BZD27C8V2P-M 7.7 100 0.03 0.08 12.3 12.2 1200 6.8
BZD27C9V1P-M 8.5 50 0.03 0.08 13.3 11.3 100 7.5
BZD27C10P-M 9.4 50 0.05 0.09 14.8 10.1 20 8.2
BZD27C11P-M 10.4 50 0.05 0.1 15.7 9.6 5 9.1
BZD27C12P-M 11.4 50 0.05 0.1 17 8.8 5 10
BZD27C13P-M 12.4 50 0.05 0.1 18.9 7.9 5 11
BZD27C15P-M 13.8 50 0.05 0.1 20.9 7.2 5 12
BZD27C16P-M 15.3 25 0.06 0.11 22.9 6.6 5 13
BZD27C18P-M 16.8 25 0.06 0.11 25.6 5.9 5 15
BZD27C20P-M 18.8 25 0.06 0.11 28.4 5.3 5 16
BZD27C22P-M 20.8 25 0.06 0.11 31 4.8 5 18
BZD27C24P-M 22.8 25 0.06 0.11 33.8 4.4 5 20
BZD27C27P-M 25.1 25 0.06 0.11 38.1 3.9 5 22
BZD27C30P-M 28 25 0.06 0.11 42.2 3.6 5 24
BZD27C33P-M 31 25 0.06 0.11 46.2 3.2 5 27
BZD27C36P-M 34 10 0.06 0.11 50.1 3 5 30
BZD27C39P-M 37 10 0.06 0.11 54.1 2.8 5 33
BZD27C43P-M 40 10 0.07 0.12 60.7 2.5 5 36
BZD27C47P-M 44 10 0.07 0.12 65.5 2.3 5 39
BZD27C51P-M 48 10 0.07 0.12 70.8 2.1 5 43
BZD27C56P-M 52 10 0.07 0.12 78.6 1.9 5 47
BZD27C62P-M 58 10 0.08 0.13 86.5 1.7 5 51
BZD27C68P-M 64 10 0.08 0.13 94.4 1.6 5 56
BZD27C75P-M 70 10 0.08 0.13 103.5 1.5 5 62
BZD27C82P-M 77 10 0.08 0.13 114 1.3 5 68
BZD27C91P-M 85 5 0.09 0.13 126 1.2 5 75
BZD27C100P-M 94 5 0.09 0.13 139 1.1 5 82
BZD27C110P-M 104 5 0.09 0.13 139 0.72 5 91
BZD27C120P-M 114 5 0.09 0.13 152 0.65 5 100
BZD27C130P-M 124 5 0.09 0.13 169 0.59 5 110
BZD27C150P-M 138 5 0.09 0.13 187 0.53 5 120
BZD27C160P-M 153 5 0.09 0.13 205 0.48 5 130
BZD27C180P-M 168 5 0.09 0.13 229 0.43 5 150
BZD27C200P-M 188 5 0.09 0.13 254 0.39 5 160
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Document Number 83307
Rev. 1.0, 01-Apr-10
BZD27C3V6P-M to BZD27C200P-M
Vishay Semiconductors
For technical support, please contact: DiodesSSP@vishay.com
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage
Figure 3. Power Dissipation vs. Ambient Temperature
0.1
1
10
0.6 0.81.0 1.2 1.4 1.6
17411
IF - Forward Current (A)
VF - Forward Voltage (V)
Max. VF
Ty p. VF
10
100
1000
10 000
0 0.5 1.0 1.5 2.0 2.5 3.0
17412
CD - Typ. Junction Capacitance (pF)
VR - Reverse Voltage (V)
C5V1P C6V8PC12P
C27P C51P
C200P
C18P
0
1.0
0.5
1.5
2.5
2.0
3.0
0 25 50 75 100 125 150
17413
Ptot - Power Dissipation (W)
Tamb - Ambient Temperature (°C)
Ambient temperature
Tie point temperature
Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage
Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition
0
40
20
120
140
60
100
80
160
0 50 100 150 200
17414
P
RSM
- Max. Pulse Power Dissipation (W)
V
Znom
- Zener Voltage (V)
17415
t
IRSM
(%)
100
90
50
10
t1
t1 = 10 µs
t2 = 1000 µs
t2
BZD27C3V6P-M to BZD27C200P-M
Document Number 83307
Rev. 1.0, 01-Apr-10
Vishay Semiconductors
www.vishay.com
5
For technical support, please contact: DiodesSSP@vishay.com
Package Dimensions in millimeters (inches): DO219-AB (SMF)
Foot print recommendation:
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
1.3 (0.051) 1.3 (0.051)
2.9 (0.114)
1.4 (0.055)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.85 (0.033)
0.35 (0.014)
1.2 (0.047)
0.8 (0.031)
1.9 (0.075)
1.7 (0.067)
1.08 (0.043)
0.88 (0.035)
0.25 (0.010)
0.05 (0.002)
0.1 (0.004)
0 (0.000)
5
5
Created - Date: 15. February 2005
17247
Detail Z
enlarged
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Document Number 83307
Rev. 1.0, 01-Apr-10
BZD27C3V6P-M to BZD27C200P-M
Vishay Semiconductors
For technical support, please contact: DiodesSSP@vishay.com
Blistertape for SMF Dimensions in millimeters
18513
PS
Document-No.: S8-V-3717.02-001 (3)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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